PSDT110 [POWERSEM]
Three Phase Full Controlled Bridges; 三相全控桥
| 型号： | PSDT110 |
| 厂家： | 
POWERSEM GMBH |
| 描述： | Three Phase Full Controlled Bridges |
| 文件： | 总3页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Three Phase
PSDT 110
IdAV
= 110A
Full Controlled Bridges
VRRM
= 400-1600 V
Preliminary Data Sheet
VRSM
VDSM
VRRM
VDRM
Type
500
400
PSDT 110/04
PSDT 110/08
PSDT 110/12
PSDT 110/14
PSDT 110/16
~
~
~
900
1300
1500
*1700
800
1200
1400
*1600
* Delivery on request
Features
Symbol Test Conditions
Maximum Ratings
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Low forward voltage drop
• UL registered, E 148688
TC = 85 °C
TVJ = 45°C
VR = 0
per module
110
1150
1230
A
A
A
IdAV
ITSM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1070
6600
6280
5000
4750
A
A
A2 s
A2 s
∫ i2 dt
Applications
• Heat and temperature control for
industrial furnaces and chemical
processes
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A2 s
A2 s
• Lighting control
• Motor control
• Power converter
TVJ = TJVM
f = 400Hz, tP = 200µs
repetitive, IT = 50 A
150
A/µs
(di/dt)cr
VD = 2/3 VDRM
IG = 0.3 A
non repetitive, IT = 1/3 . IdAV
Advantages
500
A/µs
V/µs
• Easy to mount with two screws
• Space and weight savings
diG/dt = 0.3 A/µs
TVJ = TVJM
RGK = ∞, method 1 (linear voltage rise)
TVJ = TVJM
IT = ITAVM
VDR = 2/3 VDRM
1000
(dv/dt)cr
PGM
• Improved temperature and power
cycling capability
W
W
W
V
°C
°C
°C
tP = 30µs
tP = 500µs
≤
≤
≤
10
5
0.5
10
• High power density
Package, style and outline
PGAVM
VRGM
TVJ
Dimensions in mm (1mm = 0.0394“)
-40 ... + 125
125
TVJM
Tstg
VISOL
-40 ... + 125
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
5
5
270
V ∼
V ∼
Nm
Nm
g
Mounting torque
Terminal connection torque
typ.
(M6)
(M6)
Md
Weight
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSDT 110
Symbol Test Conditions
Characteristic Value
TVJ = TVJM, VR = VRRM, VD = VDRM
5
1.75
0.85
6
mA
V
≤
≤
ID, IR
VT
IT = 200A, TVJ = 25°C
For power-loss calculations only (TVJ = TVJM
)
V
VTO
mΩ
rT
VD = 6V
VD = 6V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
V
V
≤
≤
VGT
IGT
100
200
mA
mA
≤
≤
TVJ = TVJM
TVJ = TVJM
TVJ = 25°C, tP = 30µs
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
5
450
V
mA
mA
≤
≤
VGD
IGD
IL
≤
IG = 0.3A, diG/dt = 0.3A/µs
200
2
mA
µs
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.3A, diG/dt = 0.3A/µs
≤
≤
IH
tgd
150
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
µs
tq
0.65
0.108
0.8
0.133
K/W
K/W
K/W
K/W
RthJC
RthJK
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10.0
9.4
50
mm
mm
dS
dA
a
m/s2
I
T(OV)
------
I
300
TSM
T
=25°C
I
TVJ=45°C
1150
(A)
TSM
VJ
C
1:T = 125°
VJ
us
TVJ=150°C
1000
[A]
250
C
2:T = 25°
1.6
1.4
1.2
1
VJ
100
200
150
100
50
t
gd
10
0
V
V
RRM
0.8
0.6
0.4
1/2
1
V
RRM
RRM
I
F
1
2
1
0
100
[mA]
10
1000
0.5
1
1.5
2
0
1
2
3
I
10
10
t[ms] 10
10
V [V]
G
F
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) IFSM
TSM: Crest value t: duration
,
I
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSDT 110
10
V
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
120
DC
[A]
100
sin.180°
rec.120°
rec.60°
rec.30°
80
60
40
20
6: PGM = 10W
6
1
5
4
V
G
3
2
I
TAV
0
1
50
100
150
200
T
(°C)
0.1
C
0
1
2
3
4
10
10
I
10
10
mA
10
G
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
1
K/W
Z
thJK
0.8
0.6
0.4
0.2
Z
thJC
Z
th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
80
400
TC
[W]
350
PSDT 110
85
0.14 0.08
0.2
=
RTHCA [K/W]
90
95
300
250
200
150
100
50
0.31
0.52
1.14
100
105
110
115
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
°C
125
PVTOT
0
0
50
100
[K]
150
50
100
ITAVM
[A]
Tamb
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
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