P3C1256L70TC [PYRAMID]
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, TSOP-28;型号: | P3C1256L70TC |
厂家: | PYRAMID SEMICONDUCTOR CORPORATION |
描述: | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, TSOP-28 静态存储器 光电二极管 内存集成电路 |
文件: | 总11页 (文件大小:729K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
P3C1256L
LOW POWER 32K x 8
STATIC CMOS RAM
FEATURES
VCC Current (Commercial/Industrial)
— Operating: 70mA/85mA
— CMOS Standby: 100µA/100µA
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
Access Times
—55/70/85
— 28-Pin 600 mil DIP
— 28-Pin 330 mil SOP
— 28-Pin TSOP
Wide Range Power Supply: 2.7V to 3.6V
Easy Memory Expansion Using CE and OE Inputs
Common Data I/O
DESCRIPTIOꢀ
The P3C1256L is a 262,144-bit low power CMOS
static RAM organized as 32Kx8. The CMOS memory
requires no clocks or refreshing, and has equal access and
cycle times. Inputs are fully TTL-compatible. The RAM
operates with a wide range power supply (2.7V to 3.6V).
with matching access and cycle times. Memory locations
are specified on address pinsA0 toA14. Reading is accom-
plished by device selection (CE and output enabling (OE)
while write enable (WE) remains HIGH. By presenting the
address under these conditions, the data in the addressed
memory location is presented on the data input/output pins.
The input/output pins stay in the HIGH Z state when either
CE or OE is HIGH or WE is LOW.
Access times of 55 ns and 70 ns are available. CMOS is
utilized to reduce power consumption to a low level.
The P3C1256L device provides asynchronous operation
FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM
PIꢀ COꢀFIꢂURATIOꢀS
DIP (P6), SOP (S11-3)
TOP VIEW
Document # SRAM143 REV A
Revised October 2011
P3C1256L - 32K x 8 STATIC CMOS RAM
RECOMMEꢀDED OPERATIꢀꢂ TEMPERATURE AꢀD SUPPLꢄ VOLTAꢂE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Industrial (-40°C to 85°C)
Military (-55°C to 125°C)
Supply Voltage
2.7V ≤ VCC ≤ 3.6V
2.7V ≤ VCC ≤ 3.6V
2.7V ≤ VCC ≤ 3.6V
MAꢃIMUM RATIꢀꢂS(1)
Sym
Parameter
Min
Max
Unit
VCC
Supply Voltage with Respect to GND
-0.5
-0.5
-55
-65
7.0
V
VTERM
TA
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
Storage Temperature
VCC + 0.5
125
V
°C
STG
IOUT
ILAT
150
°C
Output Current into Low Outputs
Latch-up Current
25
mA
mA
> 200
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym Parameter
Test Conditions
IOH = -1mA, VCC = 3.0V
IOL = 2.1mA
Min
Max
Unit
V
VOH Output High Voltage (I/O0 - I/O7)
VOL Output Low Voltage (I/O0 - I/O7)
VIH Input High Voltage
2.4
0.4
VCC + 0.3
0.8
V
2.2
-0.5(3)
-2
V
VIL Input Low Voltage
V
Com
Ind
+2
ILI
Input Leakage Current
GND ≤ VIN ≤ VCC
-5
+5
µA
µA
Mil
Com
Ind
-2
-5
+2
+5
GND ≤ VOUT ≤ VCC
ILO Output Leakage Current
CE = VIH
Mil
VCC Current
ISB TTL Standby Current
(TTL Input Levels)
VCC = 3.6V, IOUT = 0 mA
3
mA
µA
CE = VIH
VCC Current
ISB1 CMOS Standby Current
(CMOS Input Levels)
VCC = 3.6V, IOUT = 0 mA
100
CE ≥ VCC - 0.2V
N/A = Not applicable
Document # SRAM143 REV A
Page 2
P3C1256L - 32K x 8 STATIC CMOS RAM
CAPACITAꢀCES(4)
(VCC = 3.3V, TA = 25°C, f = 1.0MHz)
Symbol
CIN
Parameter
Test Conditions
VIN=0V
Max
7
Unit
pF
Input Capacitance
Output Capacitance
COUT
VOUT=0V
9
pF
POWER DISSIPATIOꢀ CHARACTERISTICS VS. SPEED
*
**
Sym Parameter
Temperature Range
Unit
-55
70
-70
70
-85
-55
15
25
35
-70
15
25
35
-85
15
25
35
Commercial
Industrial
Military
70
85
mA
mA
mA
ICC
Dynamic Operating Current*
85
85
100
100
100
* Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously
enabled for writing, i.e. CE and WE ≤ VIL (max), OE is high. Switching inputs are 0V and 3V.
** As above but @ f=1 MHz and VIL/VIH = 0V/VCC.
AC ELECTRICAL CHARACTERISTICS—READ CꢄCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
-85
Sym
Parameter
Unit
Min
Max
Min
Max
Min
Max
tRC
tAA
Read Cycle Time
55
70
85
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
55
55
70
70
85
85
tAC
tOH
tLZ
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Data Valid
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
5
5
5
5
5
5
tHZ
20
30
25
35
30
40
tOE
tOLZ
tOHZ
tPU
tPD
5
0
5
0
5
0
20
55
25
70
30
85
Document # SRAM143 REV A
Page 3
P3C1256L - 32K x 8 STATIC CMOS RAM
TIMIꢀꢂ WAVEFORM OF READ CꢄCLE ꢀO. 1 (OE COꢀTROLLED)(5)
TIMIꢀꢂ WAVEFORM OF READ CꢄCLE ꢀO. 2 (ADDRESS COꢀTROLLED)(5,6)
TIMIꢀꢂ WAVEFORM OF READ CꢄCLE ꢀO. 3 (ADDRESS COꢀTROLLED)(5,7)
ꢀotes:
1. Stresses greater than those listed under MAꢀIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAꢀIMUM rating conditions for extended
periods may affect reliability.
4. This parameter is sampled and not 100% tested.
5. WE is HIGH for READ cycle.
6. CE is LOW and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE transition
LOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change,withloadingasspecifiedinFigure1. Thisparameterissampled
and not 100% tested.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
Document # SRAM143 REV A
Page 4
P3C1256L - 32K x 8 STATIC CMOS RAM
AC CHARACTERISTICS—WRITE CꢄCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
-85
Symbol Parameter
Min
Unit
Max
Min
Max
Min
Max
tWC
tCW
tAW
tAS
Write Cycle Time
55
50
50
0
70
85
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable Time to End of Write
Address Valid to End of Write
Address Setup Time
60
60
0
75
75
0
tWP
tAH
tDW
tDH
tWZ
tOW
Write Pulse Width
40
0
50
0
60
0
Address Hold Time
Data Valid to End of Write
Data Hold Time
25
0
30
0
35
0
Write Enable to Output in High Z
Output Active from End of Write
25
30
35
5
5
5
TIMIꢀꢂ WAVEFORM OF WRITE CꢄCLE ꢀO. 1 (WE COꢀTROLLED)(10,11)
Notes:
10. CE and WE must be LOW for WRITE cycle.
13. Write Cycle Time is measured from the last valid address to the first
11. OE is LOW for this WRITE cycle to show tWZ and tOW
12. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state
.
transitioning address.
Document # SRAM143 REV A
Page 5
P3C1256L - 32K x 8 STATIC CMOS RAM
TIMIꢀꢂ WAVEFORM OF WRITE CꢄCLE ꢀO. 2 (CE COꢀTROLLED)(10)
AC TEST COꢀDITIOꢀS
Input Pulse Levels
TRUTH TABLE
GND to 3.0V
Mode
CE
OE
ꢀ
WE
ꢀ
I/O
Power
Standby
Standby
Active
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
3ns
1.5V
Standby
Standby
DOUT Disabled
Read
H
ꢀ
L
L
L
High Z
High Z
High Z
DOUT
ꢀ
ꢀ
1.5V
H
L
H
See Figures 1 and 2
H
Active
Write
ꢀ
L
High Z
Active
Figure 1. Output Load
Figure 2. Thevenin Equivalent
* including scope and test fixture.
ꢀote:
Because of the high speed of the P3C1256L, care must be taken when
testing this device; an inadequate setup can cause a normal function-
ing part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the VCC and ground planes
directly up to the contactor fingers. A 0.01 µF high frequency capacitor
is also required between VCC and ground. To avoid signal reflections,
proper termination must be used; for example, a 50Ω test environment
should be terminated into a 50Ω load with 1.77V (Thevenin Voltage) at
the comparator input, and a 589Ω resistor must be used in series with
DOUT to match 639Ω (Thevenin Resistance).
Document # SRAM143 REV A
Page 6
P3C1256L - 32K x 8 STATIC CMOS RAM
DATA RETEꢀTIOꢀ CHARACTERISTICS
Typ.*
VCC
Max
VCC =
=
Sym
Parameter
Test Conditions
Min
Unit
2.0V
3.0V
2.0V
3.0V
VDR
VCC for Data Retention
Data Retention Current
2.0
V
ICCDR
10
15
80
120
µA
CE ≥ VCC - 0.2V,
VIN ≥ VCC - 0.2V
or VIN ≤ 0.2V
Chip Deselect to Data Reten-
tion Time
tCDR
0
ns
ns
†
§
tR
Operation Recovery Time
tRC
* TA = +25°C
tRC§ = Read Cycle Time
† = This parameter is guaranteed but not tested.
DATA RETEꢀTIOꢀ WAVEFORM
Document # SRAM143 REV A
Page 7
P3C1256L - 32K x 8 STATIC CMOS RAM
ORDERIꢀꢂ IꢀFORMATIOꢀ
Document # SRAM143 REV A
Page 8
P3C1256L - 32K x 8 STATIC CMOS RAM
PLASTIC DUAL Iꢀ-LIꢀE PACꢁAꢂE
Pkg #
P6
# Pins
28 (600 mil)
Symbol
Min
Max
A
A1
b
0.090
0.000
0.014
0.015
0.008
1.380
0.485
0.600
0.200
0.070
0.020
0.065
0.012
1.430
0.550
0.625
b2
C
D
E
E1
e
0.100 BSC
0.600 TYP
0.100 0.180
0° 15°
eB
L
SOIC/SOP SMALL OUTLIꢀE IC PACꢁAꢂE
Pkg #
S11-3
# Pins
28 (330 Mil)
Symbol
Min
Max
A
A1
B
0.094
0.002
0.014
0.008
0.702
0.120
0.014
0.020
0.012
0.728
C
D
e
0.050 BSC
E
0.291
0.463
0.010
0.020
0°
0.340
0.477
0.029
0.050
8°
H
h
L
Document # SRAM143 REV A
Page 9
P3C1256L - 32K x 8 STATIC CMOS RAM
TSOP THIꢀ SMALL OUTLIꢀE PACꢁAꢂE
Pkg #
T1
# Pins
28
Symbol
Min
Max
0.047
0.040
0.011
0.469
0.319
A
A2
b
0.039
0.036
0.007
0.461
0.311
D
E
e
0.022 BSC
0.520 0.535
HD
Document # SRAM143 REV A
Page 10
P3C1256L - 32K x 8 STATIC CMOS RAM
REVISIOꢀS
DOCUMEꢀT ꢀUMBER SRAM143
DOCUMEꢀT TITLE
P3C1256L LOW POWER 32K x 8 STATIC CMOS RAM
REV ISSUE DATE
ORIꢂIꢀATOR DESCRIPTIOꢀ OF CHAꢀꢂE
OR
A
Jul-2011
Oct-2011
JDB
JDB
New Data Sheet
Added wide range power supply
Document # SRAM143 REV A
Page 11
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