PY26335PMB [PYRAMID]

UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24;


型号：	PY26335PMB
厂家：	PYRAMID SEMICONDUCTOR CORPORATION
描述：	UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24 可编程只读存储器光电二极管
文件：	总9页 (文件大小：552K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PY263/PY264

8K x 8 REPROGRAMMABLE PROM

FEATURES

EPROM Technology for reprogramming

ꢀ High Speed

Windowed devices for reprogramming

Fully TTL Compatible Inputs and Outputs

– 25/35/45/55 ns (Commercial)

– 25/35/45/55 ns (Military)

Standard Pinout (JEDEC Approved)

– 24-Pin 300 mil Windowed CERDIP (PY263)

– 24-Pin 300 mil Non-Windowed Plastic DIP

(PY263)

ꢀ Low Power Operation:

– 24-Pin 600 mil Windowed CERDIP (PY264)

– 24-Pin 600 mil Non-Windowed Plastic DIP

(PY264)

– 660 mW Commercial

– 770 mW Military

Single 5V±10% Power Supply

DESCRIPTION

The PY263 and PY264 are 8Kx8 CMOS PROMs. The

devices are available in windowed packages which when

exposed to UV light, the memory content in the PROM is

erased and can be reprogrammed. EPROM technology is

used in the memory cells for programming. The EPROM

requires a 12.5V for programming. Devices are tested to

insure that performance of the device meets the DC and

AC speciﬁcation limits after customer programming.

To perform a read operation from the device, CS is LOW.

The memory contents in the address established by the

Address pins (A₀to A₁₂) will become available on the out-

puts (O₀to O₇).

The PY263 is available in 24-pin 300 mil Ceramic DIPs

(Windowed) and Plastic DIPs (Non-Windowed).

The PY264 is available in 24-pin 600 mil Ceramic DIPs

(Windowed) and Plastic DIPs (Non-Windowed).

FUNCTIONAL BLOCk DIAꢀRAM

PIN CONFIꢀURATION

DIP (P8, WD2)

Note: Window on

WD2 pacꢁage only

Document # EPROM102 REV A

Revised March 2009

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

MAxIMUM RATINꢀS⁽¹⁾

RECOMMENDED OPERATINꢀ CONDITIONS

Sym Parameter

Value

Unit

ꢀrade⁽²⁾

Ambient Temp

0°C to 70°C

ꢀND

V_CC

Power Supply Pin with

V_CC

Commercial

Military

5.0V ± 10%

-0.5 to +7

Respect to GND

-55°C to +125°C

Terminal Voltage with

V_TERMRespect to GND (up to

7.0V)

-0.5 to VCC + 0.5

CAPACITANCES⁽⁴⁾

V_PPProgram Voltage

°C

(V_CC= 5.0V, T_A= 25°C, f = 1.0MHz)

T_A

Operating Temperature

-55 to +125

-65 to +150

1.0

T_BIASTemperature Under Bias

T_STGStorage Temperature

Sym Parameter

Conditions Typ Unit

C_IN

Input Capacitance

Output Capacitance

V_IN=0V

P_T

Power Dissipation

C_OUT

V_OUT=0V

I_OUTDC Output Current

DC ELECTRICAL CHARACTERISTICS

(Over Recommended Operating Temperature & Supply Voltage)⁽²⁾

PY263 / PY264

Sym

Parameter

Test Conditions

Unit

Min

Maꢂ

V_IH

V_IL

Input High Voltage

2.0

V_CC

Input Low Voltage

-0.5⁽³⁾

0.8

V_HC

V_LC

V_OL

V_OH

CMOS Input High Voltage

CMOS Input Low Voltage

Output Low Voltage (TTL Load)

Output High Voltage (TTL Load)

V_CC- 0.2 V_CC+ 0.5

-0.5⁽³⁾

0.2

0.4

I_OL=+16 mA, V_CC= Min.

I_OH= - 4 mA, V_CC= Min

2.4

-10

-40

-10

-40

COM

MIL

+10

+40

+10

+40

µA

I_LI

Input Leakage Current

Output Leakage Current

V_CC= Max, V_IN= GND to V_CC

COM

MIL

V_CC= Max, CE = V_IH,

V_OUT= GND to V_CC

I_LO

V_PP

I_PP

Programming Supply Voltage

Programming Supply Current

Input HIGH Programming Voltage

Input LOW Programming Voltage

V_IHP

V_ILP

4.75

0.4

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Sym Parameter

Temperature Range

-25

-35

-45

-55

Unit

Commercial

120

100

120

100

120

I_CCDynamic Operating Current

Military

140

120

* V_CC= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CS = V_IL.

Document # EPROM102 REV A

Page 2

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(V_CC= 5V ± 10%, All Temperature Ranges)⁽²⁾

-25

-35

-45

-55

Sym Parameter

Unit

Min

Maꢂ

Min

Maꢂ

Min

Maꢂ

Min

Maꢂ

t_AA

Address to Output Valid

t_HZCSChip Select Inactive to High Z

t_ACS

t_PU

Chip Select Active to Output Valid

Chip Select Active to Power-Up

TIMINꢀ WAVEFORM OF READ CYCLE

Notes:

1. Stresses greater than those listed under MAꢀIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this speciﬁcation

is not implied. Exposure to MAꢀIMUM rating conditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air ﬂow.

3. Transient inputs with V_ILand I_ILnot more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.

Document # EPROM102 REV A

Page 3

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

DEVICE ERASURE

READ MODE

If the device is subjected to wavelengths of light below

4000 Angstroms, device erasure will commence. It is

therefore recommended to use an opaque label over the

window in the event the device will be exposed to light-

ing for a long time. The UV dose for erasure requires a

wavelength of 2,537 Angstroms for a minimum dose of 25

Wsec/cm². If using a UV lamp of 12 mW/cm², the expo-

sure time is estimated to be 35 minutes. Devices should

be positioned within 1 inch of the lamp during the erasure

process. Permanent damage can occur to the devices if

exposed to UV light for an extended period of time.

Reading the addressed content is the normal operating

mode for a programmed device. Signals are at normal

TTL levels. Addressing is applied to the 13 address pins

and CS is LOW. Under these conditions, the addressed

location contents are presented to the output pins.

MODE SELECTION

Pin Function

Read or Output Disable

Program

A₁₂

A₁₁

V_PP

A₁₁

V_PP

A₁₀

LATCH

A₁₀

A₉

PGM

A₉

A₈

VFY

A₈

O₇-O₀

D₇-D₀

O₇-O₀

High Z

D₇-D₀

High Z

O₇-O₀

Mode

Read

V_IL

Output Disable

Program

A₁₂

A₁₀

A₉

A₈

V_IH

V_ILP

V_IHP

V_ILP

Program Inhibit

Program Verify

Blank Check

V_ILP

PROꢀRAMMINꢀ PINOUTS

Document # EPROM102 REV A

Page 4

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

AC TEST CONDITIONS

Input Pulse Levels

GND to 3.0V

Input Rise and Fall Times

Input Timing Reference Level

Output Timing Reference Level

Output Load

3ns

1.5V

See Figures 1 and 2

Figure 1. Output Load

Figure 2. Thevenin Equivalent

* including scope and test ﬁxture.

Note:

Because of the ultra-high speed of the PY263/PY264, care must be

taken when testing this device; an inadequate setup can cause a normal

functioning part to be rejected as faulty. Long high-inductance leads that

cause supply bounce must be avoided by bringing the V_CCand ground

planes directly up to the contactor ﬁngers. A 0.01 µF high frequency

capacitor is also required between V_CCand ground.

Document # EPROM102 REV A

Page 5

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

ORDERINꢀ INFORMATION

Document # EPROM102 REV A

Page 6

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

CERAMIC DUAL INLINE PACkAꢀE (WINDOWED)

Pkg #

WD1

# Pins

24 (300 mil)

Symbol

Min

Maꢂ

0.200

0.026

0.065

0.018

1.280

0.310

0.014

0.045

0.008

0.220

0.300 BSC

0.100 BSC

0.125

0.200

0.060

0.015

0.005

0°

15°

0.175

CERAMIC DUAL INLINE PACkAꢀE (WINDOWED)

Pkg #

WD2

# Pins

24 (600 mil)

Symbol

Min

0.175

0.015

0.045

0.009

Maꢂ

0.225

0.020

0.065

0.012

1.280

0.550

0.505

0.600 BSC

0.100 BSC

0.125

0.200

0.060

0.015

0.005

0°

15°

0.280

Document # EPROM102 REV A

Page 7

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

PLASTIC DUAL INLINE PACkAꢀE (NON-WINDOWED)

Pkg #

# Pins

24 (300 Mil)

Symbol

Min

Maꢂ

0.210

0.015

0.014

0.045

0.008

1.230

0.240

0.280

0.022

0.070

0.014

1.280

0.280

0.325

0.100 BSC

0.430

0.160

15°

0.115

0°

PLASTIC DUAL INLINE PACkAꢀE (NON-WINDOWED)

Pkg #

# Pins

24 (600 mil)

Symbol

Min

Maꢂ

0.155

0.015

0.055

0.009

1.230

0.530

0.570

0.200

0.060

0.020

0.065

0.012

1.260

0.550

0.625

0.100 BSC

0.610

0.115

0°

0.685

0.160

15°

Document # EPROM102 REV A

Page 8

PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM

REVISIONS

DOCUMENT NUMBER EPROM102

DOCUMENT TITLE

PY263 / PY264 8K ꢀ 8 PROGRAMMABLE PROM

REV ISSUE DATE

ORIꢀINATOR DESCRIPTION OF CHANꢀE

Jul-2007

JDB

New Data Sheet

Mar-2009

Added PY263 (300 mil)

Document # EPROM102 REV A

Page 9

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