PY264-35PM [PYRAMID]
8K X 8 REPROGRAMMABLE PROM; 8K ×8可重新编程的PROM型号: | PY264-35PM |
厂家: | PYRAMID SEMICONDUCTOR CORPORATION |
描述: | 8K X 8 REPROGRAMMABLE PROM |
文件: | 总8页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PY264
8K X 8 REPROGRAMMABLE PROM
FEATURES
EPROM Technology for reprogramming
Single 5V±10% Power Supply
High Speed
– 35/45/55 ns (Commercial)
– 35/45/55 ns (Military)
Windowed devices for reprogramming
Fully TTL Compatible Inputs and Outputs
Low Power Operation:
– 660 mW Commercial
– 770 mW Military
Standard Pinout (JEDEC Approved):
– 24-Pin 600 mil Windowed CERDIP
– 24-Pin 600 mil Non-Windowed Plastic DIP
DESCRIPTION
Toperformareadoperationfromthedevice,CSisLOW.
The memory contents in the address established by the
Address pins (A0 to A12) will become available on the
outputs (O0 to O7).
The PY264 is an 8Kx8 CMOS PROM. The device is
availableinwindowedpackageswhichwhenexposedto
UVlight,thememorycontentinthePROMiserasedand
can be reprogrammed. EPROM technology is used in
the memory cells for programming. The EPROM re-
quires a 12.5V for programming. Devices are tested to
insure that performance of the device meets the DC and
AC specification limits after customer programming.
The PY264 is available in 24-pin 600 mil Ceramic DIPs
(Windowed) and Plastic DIPs (Non-Windowed).
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (P8, WD2)
Note: Window on
WD2 package only
Document # EPROM102 REV OR
Revised July 2007
1
PY264
MAXIMUM RATINGS(1)
Symbol
TA
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
Operating Temperature –55 to +125 °C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TBIAS
Temperature Under
Bias
–55 to +125
°C
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
VTERM
VPP
V
V
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
1.0
50
Program Voltage
13
IOUT
mA
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
RECOMMENDED OPERATING CONDITIONS
(2)
Grade
Ambient Temp
Gnd
Vcc
Symbol
CIN
Parameter
Conditions Typ. Unit
Commercial
0°C to 70°C
0V 5.0V ±10%
0V 5.0V ±10%
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
10 pF
10 pF
Military
-55°C to +125°C
COUT
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
PY264
Min
Symbol
Parameter
Test Conditions
Unit
Max
Input High Voltage
2.0
VCC
VIH
V
V
V
VIL
VHC
VLC
Input Low Voltage
–0.5(3)
0.8
VCC –0.2
–0.5(3)
VCC +0.5
CMOS Input High Voltage
CMOS Input Low Voltage
0.2
0.4
V
V
Output Low Voltage (TTL Load) IOL = +16 mA, VCC = Min.
VOL
VOH
Output High Voltage (TTL Load) IOH = –4 mA, VCC = Min.
2.4
V
VCC = Max.
Input Leakage Current
ILI
–10
+10
µA
VIN = GND to VCC
VCC = Max., CE = VIH,
Output Leakage Current
µA
µA
COM
MIL
–10
–40
+10
+40
ILO
VOUT = GND to VCC
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
12
13
50
V
mA
V
VPP
IPP
VIHP
VILP
4.75
0.4
V
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature Range
–35
–45
–55
Unit
Commercial
Military
100
120
100
120
100
120
mA
mA
ICC
Dynamic Operating Current*
Document # EPROM102 REV OR
Page 2 of 8
PY264
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-35
Min Max
-45
Min Max
-55
Min Max
Symbol
Parameter
Address to Output Valid
Unit
tAA
35
45
55
ns
ns
ns
ns
ns
ns
ns
tHZCS1 Chip Select Inactive to High Z
tACS1 Chip Select Active to Output Valid
tHZCS2 Chip Select Inactive to High Z
20
30
35
20
30
35
35
45
55
tACS2
Chip Select Active to Output Valid
Chip Select Active to Power-Up
Chip Slect Inactive to Power-Down
35
45
55
tPU
tPD
0
0
0
35
45
55
TIMING WAVEFORM OF READ CYCLE
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
Document # EPROM102 REV OR
Page 3 of 8
PY264
DEVICE ERASURE
25 Wsec/cm2. If using a UV lamp of 12 mW/cm2, the
exposure time is estimated to be 35 minutes. Devices
should be positioned within 1 inch of the lamp during the
erasure process. Permanent damage can occur to the
devices if exposed to UV light for an extended period of
time.
If the device is subjected to wavelengths of light below
4000 Angstroms, device erasure will commence. It is
thereforerecommendedtouseanopaquelabeloverthe
windowintheeventthedevicewillbeexposedtolighting
for a long time. The UV dose for erasure requires a
wavelength of 2,537 Angstroms for a minimum dose of
READ MODE
Reading the addressed content is the normal operating
mode for a programmed device. Signals are at normal
TTLlevels. Addressingisappliedtothe13addresspins
and CS is LOW. Under these conditions, the addressed
location contents are presented to the output pins.
MODE SELECTION
Pin Function
Read or Output Disable
Program
A12
NA
A11
Vpp
A11
A10
LATCH
A10
A9
PGM
A9
A8
VFY
A8
O7-O0
D7-D0
O7-O0
High Z
D7-D0
High Z
O7-O0
O7-O0
CS
CS
Mode
A12
VIL
Read
A12
A11
A10
A9
A8
VIH
Output Disable
Program
VILP
VILP
VILP
VILP
Vpp
Vpp
Vpp
Vpp
VILP
VILP
VIHP
VIHP
VIHP
VIHP
VIHP
VILP
VILP
VILP
VILP
VILP
VILP
VILP
Program Inhibit
Program Verify
Blank Check
VILP
VILP
PROGRAMMING PINOUTS
Document # EPROM102 REV OR
Page 4 of 8
PY264
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
3ns
1.5V
1.5V
See Figures 1 and 2
Figure 1. Output Load
Figure 2. Thevenin Equivalent
* including scope and test fixture.
Note:
Because of the ultra-high speed of the PY264, care must be taken when
testing this device; an inadequate setup can cause a normal functioning
part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the VCC and ground planes
directly up to the contactor fingers. A 0.01 µF high frequency capacitor
is also required between VCC and ground.
Document # EPROM102 REV OR
Page 5 of 8
PY264
ORDERING INFORMATION
SELECTION GUIDE
The PY264 is available in the following temperature, speed and package options.
Temperature
Package
Range
35
-35PC
N/A
45
N/A
55
N/A
Commercial
Plastic DIP
Windowed CERDIP
-45WC
-55WC
Military
Temperature
Windowed CERDIP
Windowed CERDIP
N/A
N/A
-45WM
-55WM
Military
Processed*
-45WMB
-55WMB
* Military temperature range with MIL-STD-883, Class B processing.
N/A = Not Available
Document # EPROM102 REV OR
Page 6 of 8
PY264
CERAMIC DUAL IN-LINE PACKAGE (WINDOWED)
Pkg #
# Pins
Symbol
WD2
24 (600 mil)
Min
0.175
0.015
0.045
0.009
-
Max
A
b
b2
C
D
E
0.225
0.020
0.065
0.012
1.280
0.550
0.505
eA
e
0.600 BSC
0.100 BSC
L
0.125
0.200
0.060
-
Q
S1
α
0.015
0.005
0°
15°
WD
0.280
PLASTIC DUAL IN-LINE PACKAGE (NON-WINDOWED)
Pkg #
P8
# Pins
24 (600 mil)
Symbol
Min
Max
A
A1
b
b2
C
D
E1
E
0.155
0.015
0.015
0.055
0.009
1.230
0.530
0.570
0.200
0.060
0.020
0.065
0.012
1.260
0.550
0.625
e
0.100 BSC
eB
L
0.610
0.115
0.685
0.160
0
°
15
α
°
Document # EPROM102 REV OR
Page 7 of 8
PY264
REVISIONS
DOCUMENT NUMBER:
DOCUMENT TITLE:
EPROM102
PY264 8K x 8 REPROGRAMMABLE PROM
ORIG. OF
CHANGE
ISSUE
REV.
DESCRIPTION OF CHANGE
DATE
OR
Jul-2007
JDB
New Data Sheet
Document # EPROM102 REV OR
Page 8 of 8
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