PY264-35PM [PYRAMID]

8K X 8 REPROGRAMMABLE PROM; 8K ×8可重新编程的PROM
PY264-35PM
型号: PY264-35PM
厂家: PYRAMID SEMICONDUCTOR CORPORATION    PYRAMID SEMICONDUCTOR CORPORATION
描述:

8K X 8 REPROGRAMMABLE PROM
8K ×8可重新编程的PROM

可编程只读存储器
文件: 总8页 (文件大小:136K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PY264  
8K X 8 REPROGRAMMABLE PROM  
FEATURES  
EPROM Technology for reprogramming  
Single 5V±10% Power Supply  
High Speed  
– 35/45/55 ns (Commercial)  
– 35/45/55 ns (Military)  
Windowed devices for reprogramming  
Fully TTL Compatible Inputs and Outputs  
Low Power Operation:  
– 660 mW Commercial  
– 770 mW Military  
Standard Pinout (JEDEC Approved):  
– 24-Pin 600 mil Windowed CERDIP  
– 24-Pin 600 mil Non-Windowed Plastic DIP  
DESCRIPTION  
Toperformareadoperationfromthedevice,CSisLOW.  
The memory contents in the address established by the  
Address pins (A0 to A12) will become available on the  
outputs (O0 to O7).  
The PY264 is an 8Kx8 CMOS PROM. The device is  
availableinwindowedpackageswhichwhenexposedto  
UVlight,thememorycontentinthePROMiserasedand  
can be reprogrammed. EPROM technology is used in  
the memory cells for programming. The EPROM re-  
quires a 12.5V for programming. Devices are tested to  
insure that performance of the device meets the DC and  
AC specification limits after customer programming.  
The PY264 is available in 24-pin 600 mil Ceramic DIPs  
(Windowed) and Plastic DIPs (Non-Windowed).  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
DIP (P8, WD2)  
Note: Window on  
WD2 package only  
Document # EPROM102 REV OR  
Revised July 2007  
1
PY264  
MAXIMUM RATINGS(1)  
Symbol  
TA  
Parameter  
Value  
Unit  
Symbol  
Parameter  
Value  
Unit  
Operating Temperature –55 to +125 °C  
VCC  
Power Supply Pin with  
Respect to GND  
–0.5 to +7  
V
TBIAS  
Temperature Under  
Bias  
–55 to +125  
°C  
Terminal Voltage with  
Respect to GND  
(up to 7.0V)  
–0.5 to  
VCC +0.5  
VTERM  
VPP  
V
V
TSTG  
PT  
Storage Temperature  
Power Dissipation  
DC Output Current  
–65 to +150  
°C  
W
1.0  
50  
Program Voltage  
13  
IOUT  
mA  
CAPACITANCES(4)  
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)  
RECOMMENDED OPERATING CONDITIONS  
(2)  
Grade  
Ambient Temp  
Gnd  
Vcc  
Symbol  
CIN  
Parameter  
Conditions Typ. Unit  
Commercial  
0°C to 70°C  
0V 5.0V ±10%  
0V 5.0V ±10%  
Input Capacitance VIN = 0V  
Output Capacitance VOUT= 0V  
10 pF  
10 pF  
Military  
-55°C to +125°C  
COUT  
DC ELECTRICAL CHARACTERISTICS  
Over recommended operating temperature and supply voltage(2)  
PY264  
Min  
Symbol  
Parameter  
Test Conditions  
Unit  
Max  
Input High Voltage  
2.0  
VCC  
VIH  
V
V
V
VIL  
VHC  
VLC  
Input Low Voltage  
–0.5(3)  
0.8  
VCC –0.2  
–0.5(3)  
VCC +0.5  
CMOS Input High Voltage  
CMOS Input Low Voltage  
0.2  
0.4  
V
V
Output Low Voltage (TTL Load) IOL = +16 mA, VCC = Min.  
VOL  
VOH  
Output High Voltage (TTL Load) IOH = –4 mA, VCC = Min.  
2.4  
V
VCC = Max.  
Input Leakage Current  
ILI  
–10  
+10  
µA  
VIN = GND to VCC  
VCC = Max., CE = VIH,  
Output Leakage Current  
µA  
µA  
COM  
MIL  
–10  
–40  
+10  
+40  
ILO  
VOUT = GND to VCC  
Programming Supply Voltage  
Programming Supply Current  
Input HIGH Programming Voltage  
Input LOW Programming Voltage  
12  
13  
50  
V
mA  
V
VPP  
IPP  
VIHP  
VILP  
4.75  
0.4  
V
POWER DISSIPATION CHARACTERISTICS VS. SPEED  
Symbol  
Parameter  
Temperature Range  
–35  
–45  
–55  
Unit  
Commercial  
Military  
100  
120  
100  
120  
100  
120  
mA  
mA  
ICC  
Dynamic Operating Current*  
Document # EPROM102 REV OR  
Page 2 of 8  
PY264  
AC ELECTRICAL CHARACTERISTICS—READ CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-35  
Min Max  
-45  
Min Max  
-55  
Min Max  
Symbol  
Parameter  
Address to Output Valid  
Unit  
tAA  
35  
45  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tHZCS1 Chip Select Inactive to High Z  
tACS1 Chip Select Active to Output Valid  
tHZCS2 Chip Select Inactive to High Z  
20  
30  
35  
20  
30  
35  
35  
45  
55  
tACS2  
Chip Select Active to Output Valid  
Chip Select Active to Power-Up  
Chip Slect Inactive to Power-Down  
35  
45  
55  
tPU  
tPD  
0
0
0
35  
45  
55  
TIMING WAVEFORM OF READ CYCLE  
Notes:  
1. Stresses greater than those listed under MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAXIMUM rating conditions for extended  
periods may affect reliability.  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3. Transient inputs with VIL and IIL not more negative than –3.0V and  
–100mA, respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
Document # EPROM102 REV OR  
Page 3 of 8  
PY264  
DEVICE ERASURE  
25 Wsec/cm2. If using a UV lamp of 12 mW/cm2, the  
exposure time is estimated to be 35 minutes. Devices  
should be positioned within 1 inch of the lamp during the  
erasure process. Permanent damage can occur to the  
devices if exposed to UV light for an extended period of  
time.  
If the device is subjected to wavelengths of light below  
4000 Angstroms, device erasure will commence. It is  
thereforerecommendedtouseanopaquelabeloverthe  
windowintheeventthedevicewillbeexposedtolighting  
for a long time. The UV dose for erasure requires a  
wavelength of 2,537 Angstroms for a minimum dose of  
READ MODE  
Reading the addressed content is the normal operating  
mode for a programmed device. Signals are at normal  
TTLlevels. Addressingisappliedtothe13addresspins  
and CS is LOW. Under these conditions, the addressed  
location contents are presented to the output pins.  
MODE SELECTION  
Pin Function  
Read or Output Disable  
Program  
A12  
NA  
A11  
Vpp  
A11  
A10  
LATCH  
A10  
A9  
PGM  
A9  
A8  
VFY  
A8  
O7-O0  
D7-D0  
O7-O0  
High Z  
D7-D0  
High Z  
O7-O0  
O7-O0  
CS  
CS  
Mode  
A12  
VIL  
Read  
A12  
A11  
A10  
A9  
A8  
VIH  
Output Disable  
Program  
VILP  
VILP  
VILP  
VILP  
Vpp  
Vpp  
Vpp  
Vpp  
VILP  
VILP  
VIHP  
VIHP  
VIHP  
VIHP  
VIHP  
VILP  
VILP  
VILP  
VILP  
VILP  
VILP  
VILP  
Program Inhibit  
Program Verify  
Blank Check  
VILP  
VILP  
PROGRAMMING PINOUTS  
Document # EPROM102 REV OR  
Page 4 of 8  
PY264  
AC TEST CONDITIONS  
Input Pulse Levels  
GND to 3.0V  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
See Figures 1 and 2  
Figure 1. Output Load  
Figure 2. Thevenin Equivalent  
* including scope and test fixture.  
Note:  
Because of the ultra-high speed of the PY264, care must be taken when  
testing this device; an inadequate setup can cause a normal functioning  
part to be rejected as faulty. Long high-inductance leads that cause  
supply bounce must be avoided by bringing the VCC and ground planes  
directly up to the contactor fingers. A 0.01 µF high frequency capacitor  
is also required between VCC and ground.  
Document # EPROM102 REV OR  
Page 5 of 8  
PY264  
ORDERING INFORMATION  
SELECTION GUIDE  
The PY264 is available in the following temperature, speed and package options.  
Temperature  
Package  
Range  
35  
-35PC  
N/A  
45  
N/A  
55  
N/A  
Commercial  
Plastic DIP  
Windowed CERDIP  
-45WC  
-55WC  
Military  
Temperature  
Windowed CERDIP  
Windowed CERDIP  
N/A  
N/A  
-45WM  
-55WM  
Military  
Processed*  
-45WMB  
-55WMB  
* Military temperature range with MIL-STD-883, Class B processing.  
N/A = Not Available  
Document # EPROM102 REV OR  
Page 6 of 8  
PY264  
CERAMIC DUAL IN-LINE PACKAGE (WINDOWED)  
Pkg #  
# Pins  
Symbol  
WD2  
24 (600 mil)  
Min  
0.175  
0.015  
0.045  
0.009  
-
Max  
A
b
b2  
C
D
E
0.225  
0.020  
0.065  
0.012  
1.280  
0.550  
0.505  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.200  
0.060  
-
Q
S1  
α
0.015  
0.005  
0°  
15°  
WD  
0.280  
PLASTIC DUAL IN-LINE PACKAGE (NON-WINDOWED)  
Pkg #  
P8  
# Pins  
24 (600 mil)  
Symbol  
Min  
Max  
A
A1  
b
b2  
C
D
E1  
E
0.155  
0.015  
0.015  
0.055  
0.009  
1.230  
0.530  
0.570  
0.200  
0.060  
0.020  
0.065  
0.012  
1.260  
0.550  
0.625  
e
0.100 BSC  
eB  
L
0.610  
0.115  
0.685  
0.160  
0
°
15  
α
°
Document # EPROM102 REV OR  
Page 7 of 8  
PY264  
REVISIONS  
DOCUMENT NUMBER:  
DOCUMENT TITLE:  
EPROM102  
PY264 8K x 8 REPROGRAMMABLE PROM  
ORIG. OF  
CHANGE  
ISSUE  
REV.  
DESCRIPTION OF CHANGE  
DATE  
OR  
Jul-2007  
JDB  
New Data Sheet  
Document # EPROM102 REV OR  
Page 8 of 8  

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