PYX28C64-35L32M [PYRAMID]

8K x 8 EEPROM; 8K ×8的EEPROM


型号：	PYX28C64-35L32M
厂家：	PYRAMID SEMICONDUCTOR CORPORATION
描述：	8K x 8 EEPROM 8K ×8的EEPROM 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件：	总11页 (文件大小：148K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PYX28C64

8K x 8 EEPROM

FEATURES

Access Times of 200, 250, 300 and 350 ns

Single 5V±10% Power Supply

Software Data Protection

Fully TTL Compatible Inputs and Outputs

Endurance:10,000or100,000Cycles

Data Retention: 100 Years

Simple Byte and Page Write

Low Power CMOS:

- 60 mA Active Current

- 200 µA Standby Current

Available in the following Packages:

– 32-Pin Ceramic LCC (450 x 550 mils)

– 28-Pin 600 mil Ceramic DIP

Fast Write Cycle Times

DESCRIPTION

PIN CONFIGURATIONS

The PYX28C64 is a 5 Volt 8Kx8 EEPROM using floating

gate CMOS Technology. The device supports 64-byte

pagewriteoperation. ThePYX28C64featuresDATAand

Toggle Bit Polling as well as a system software scheme

used to indicate early completion of a Write Cycle. The

device also includes user-optional software data protec-

tion. Endurance is 10,000 or 100,000 Cycles and Data

Retentionis100Years. Thedeviceisavailableina32-Pin

LCC package as well as a 28-Pin 600 mil wide Ceramic

DIP.

DIP (C5-1)

FUNCTIONAL BLOCK DIAGRAM

1519B

LCC (L6)

Document # EEPROM101 REV B

Revised July 2007

PYX28C64

MAXIMUMRATINGS⁽¹⁾

Symbol

Parameter

Value

Unit

Symbol

Parameter

Value

Unit

V_CC

Power Supply Pin with

Respect to GND

–0.3 to +6.25

T_BIAS

TemperatureUnder

Bias

–55 to +125

°C

TerminalVoltagewith

Respect to GND

(up to 6.25V)

–0.5 to

+6.25

T_STG

P_T

StorageTemperature

PowerDissipation

DCOutputCurrent

–65 to +150

°C

V_TERM

T_A

1.0

I_OUT

OperatingTemperature

–55 to +125 °C

CAPACITANCES⁽⁴⁾

RECOMMENDED OPERATING

V_CC= 5.0V, T_A= 25°C, f = 1.0MHz

TEMPERATURE AND SUPPLY VOLTAGE

Ambient

Temperature

Grade⁽²⁾

GND

Symbol

Parameter

Conditions Typ. Unit

V_CC

Military

5.0V ± 10%

C_IN

–55°Cto+125°C

V_IN= 0V

InputCapacitance

C_OUT

V_OUT= 0V

OutputCapacitance

DC ELECTRICAL CHARACTERISTICS

Overrecommendedoperatingtemperatureandsupplyvoltage⁽²⁾

P5C164

Symbol

Parameter

TestConditions

Unit

Min

Max

V_IH

V_IL

2.0

V_CC+0.3

InputHighVoltage

InputLowVoltage

–0.5⁽³⁾

0.8

V_CC–0.2

V_CC+0.5

V_HC

V_LC

CMOS Input High Voltage

CMOS Input Low Voltage

–0.5⁽³⁾

0.2

0.4

OutputLowVoltage

(TTLLoad)

V_OL

I_OL= +8 mA, V_CC= Min.

I_OH= –4 mA, V_CC= Min.

OutputHighVoltage

(TTLLoad)

V_OH

2.4

V_CC= Max.

I_LI

–10

+10

µA

InputLeakageCurrent

OutputLeakageCurrent

V_IN= GND to V_CC

V_CC= Max., CE = V_IH,

–10

___

µA

I_LO

V_OUT= GND to V_CC

CE ≥ V_IH, OE = V_IL,

V_CC= Max,

f = Max., Outputs Open

Standby Power Supply

Current(TTLInputLevels)

I_SB

CE ≥ V_HC,

Standby Power Supply

Current

(CMOSInputLevels)

V_CC= Max,

I_SB1

___

250

µA

f = 0, Outputs Open

V_IN≤ V_LCor V_IN≥ V_HC

CE = OE = V_IL,

WE = V_IH,

All I/O's = Open,

Inputs = V_CC= 5.5V

SupplyCurrent

I_CC

Notes:

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V_ILand I_ILnot more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

Document # EEPROM101 REV B

Page 2 of 11

PYX28C64

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(V_CC= 5V ± 10%, All Temperature Ranges)⁽²⁾

-200

-250

-300

-350

Symbol

Parameter

Unit

Min Max Min Max Min Max Min Max

t_AVAVRead Cycle Time

200

250

300

350

350 ns

100 ns

t_AVQVAddress Access Time

200

100

250

100

300

100

t_ELQVChip Enable Access Time

t_OLQVOutput Enable Access Time

t_ELQXChip Enable to Output in Low Z

t_EHQZChip Disable to Output in High Z

t_OLQXOutput Enable to Output in Low Z

t_OHQZOutput Disable to Output in High Z

t_AVQXOutput Hold from Address Change

t_PU

t_PD

Chip Enable to Power Up Time

250

250 ns

50 ns

Chip Disable to Power Down Time

TIMING WAVEFORM OF READ CYCLE

Document # EEPROM101 REV B

Page 3 of 11

PYX28C64

AC CHARACTERISTICS—WRITE CYCLE

(V_CC= 5V ± 10%, All Temperature Ranges)⁽²⁾

-200

-250

-300

-350

Symbol

Parameter

Write Cycle Time

Unit

Min Max Min Max Min Max Min Max

t_WHWL1

t_EHEL1

t_AVEL

t_AVWL

t_{ELA X}

Address Setup Time

Address Hold Time

Write Setup Time

150

t_WLAX

t_WLEL

t_ELWL

t_WHEHWrite Hold Time

t_OHEL

Setup Time

150

t_OHWL

t_WHOL

t_ELEH

Hold Time

Pulse Width

t_WLWH

t_DVEH

t_DVWH

t_EHDX

Data Setup Time

Data Hold Time

µs

t_WHDX

t_EHEL2

t_WHWL2

t_ELWL

Byte Load Cycle Time

0.2

Setup Time

µs

t_OVHWLOutput Setup Time

t_EHWH

t_WHOH

Hold Time

t_OHAVErase Time

200

150

200

150

200

150

200

150

t_WLWH2Chip Erase Time

V_H

High Voltage for Chip Clear

Document # EEPROM101 REV B

Page 4 of 11

PYX28C64

TIMING WAVEFORM OF BYTE WRITE CYCLE (CE CONTROLLED)

TIMING WAVEFORM OF BYTE WRITE CYCLE (WE CONTROLLED)

Document # EEPROM101 REV B

Page 5 of 11

PYX28C64

TIMING WAVEFORM OF PAGE WRITE CYCLE

TIMING WAVEFORM OF CHIP CLEAR CYCLE

Document # EEPROM101 REV B

Page 6 of 11

PYX28C64

WRITE SEQUENCE FOR SOFTWARE

DATA PROTECTION

SOFTWARE SEQUENCE TO

DE-ACTIVATE SOFTWARE DATA

PROTECTION

Document # EEPROM101 REV B

Page 7 of 11

PYX28C64

AC TEST CONDITIONS

TRUTH TABLE

InputPulseLevels

GND to 3.0V

10ns

Mode

I/O

Input Rise and Fall Times

InputTimingReferenceLevel

OutputTimingReferenceLevel

OutputLoad

Read

V_IL

V_H

V_IH

V_IL

V_IH

V_IL

D_OUT

1.5V

Chip clear

Byte write

Write inhibit

Standby

1.5V

D_IN

See Fig. 1

High Z/D_OUT

High Z

V_IH

FIGURE 1. OUTPUT LOAD

Document # EEPROM101 REV B

Page 8 of 11

PYX28C64

ORDERING INFORMATION

ENDURANCE

DEVICE

MINIMUM ENDURANCE

PYX28C64

10,000 cycles (Standard)

PYX28C64X 100,000 cycles (High Endurance)

Document # EEPROM101 REV B

Page 9 of 11

PYX28C64

Pkg #

SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils)

C5-1

# Pins

28 (600 mil)

Symbol

Min

0.014

0.045

0.008

Max

0.232

0.026

0.065

0.018

1.490

0.610

0.500

0.600 BSC

0.100 BSC

0.125

0.200

0.015

0.005

0.060

RECTANGULAR LEADLESS CHIP CARRIER

Pkg #

# Pins

Symbol

Min

Max

0.060

0.050

0.022

0.442

0.075

0.065

0.028

0.458

0.300 BSC

0.150 BSC

0.458

0.560

0.540

0.400 BSC

0.200 BSC

0.558

0.050 BSC

0.040 REF

0.020 REF

0.045

0.075

0.055

0.095

Document # EEPROM101 REV B

Page 10 of 11

PYX28C64

REVISIONS

DOCUMENTNUMBER:

DOCUMENTTITLE:

EEPROM101

PYX28C64 8K x 8 EEPROM

ORIG. OF

CHANGE

ISSUE

DATE

REV.

DESCRIPTIONOFCHANGE

Jul-06

JDB

NewDataSheet

May-07

Jul-07

JDB

RenameddevicefromP5C164toP6C28C64

RenameddevicefromP6C28C64toPYX28C64

Document # EEPROM101 REV B

Page 11 of 11

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