IDGV51-05A1F1C-40X [QIMONDA]

Synchronous Graphics RAM, 16MX32, CMOS, PBGA170, GREEN, PLASTIC, TFBGA-170;
IDGV51-05A1F1C-40X
型号: IDGV51-05A1F1C-40X
厂家: QIMONDA AG    QIMONDA AG
描述:

Synchronous Graphics RAM, 16MX32, CMOS, PBGA170, GREEN, PLASTIC, TFBGA-170

动态存储器 内存集成电路
文件: 总21页 (文件大小:911K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
December 2008  
IDGV51-05A1F1C-[40X/50X/55X]  
512Mbit x32/x16 GDDR5 SGRAM  
EU RoHS compliant  
Internet Data Sheet  
Rev. 1.20  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
IDGV51-05A1F1C-[40X/50X/55X]  
Revision History: 2008-12, Rev. 1.20  
Page  
Subjects (major changes since last revision)  
Speed bin -55X added, speed bin -45X removed  
All  
Previous Revision: Rev. 1.11, 2007-10  
All Typos corrected  
Previous Revision: Rev. 1.10, 2008-09  
Figure1 - Maximum data rate for RDQS mode increased to 3.0 Gbps; PLL-off mode restricted to 4.0 Gbps  
Previous Revision: Rev. 1.00, 2008-06  
All 36X speed bin removed  
5
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
techdoc@qimonda.com  
qag_techdoc_A4, 4.22, 2008-07-22  
11092007-TJ6A-WC0N  
2
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
General Use Restriction  
This document as well as any and all information, products,  
trademarks, logos, graphics, and images provided in this  
document (collectively "Materials") are copyrighted or  
trademarked and are the property of Qimonda AG and it's  
subsidiaries (collectively "Qimonda"). Any unauthorized use  
of any Materials may violate copyright laws, trademark laws  
and the laws of privacy.  
your company / legal entity. You agree to keep the Material  
confidential and not to post Materials e.g. to news groups,  
mail lists, or bulletin boards. You acknowledge and agree  
that, you have no right to modify, edit, alter or enhance any of  
the Materials in any manner. This limited license terminates  
automatically, without notice to you, if you breach any of  
these terms. Upon termination you agree to immediately  
destroy any Materials.  
Qimonda grants you the limited right to use the Materials for  
the sole purpose of evaluating the products of Qimonda  
("Products") to the extent this evaluation is related to your  
(potential) purchase of such Products. You agree not to use  
the Materials for any other purpose without the prior written  
consent of Qimonda. Without limitation, you agree not to  
reproduce, re-distribute, sell, publish, broadcast or circulate  
any information contained in the materials to anyone outside  
THE MATERIALS ARE PROVIDED BY QIMONDA ON AN  
AS IS BASIS, AND QIMONDA EXPRESSLY DISCLAIMS  
ANY AND ALL WARRANTIES, EXPRESS OR IMPLIED,  
INCLUDING WITHOUT LIMITATION WARRANTIES OF  
MERCHANTABILITY AND FITNESS FOR A PARTICULAR  
PURPOSE, WITH RESPECT TO ANY MATERIALS.  
Rev. 1.20, 2008-12  
3
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
1
Overview  
1.1  
Features  
Monolithic 512Mbit GDDR5 SGRAM (2Mbit x 32 I/O x 8  
banks and 4Mbit x 16 I/O x 8 banks)  
x32/x16 mode configuration set at power-up with EDC pin  
Quarter data-rate differential clock inputs CK/CK for  
address and commands  
Two half data-rate differential clock inputs WCK/WCK,  
each associated with two data bytes (DQ, DBI, EDC)  
Single ended interface for data, address and command  
Double Data Rate (DDR) data (WCK)  
Single Data Rate (SDR) command (CK)  
Double Data Rate (DDR) addressing (CK)  
Write data mask function (single/double byte mask) via  
address bus  
Auto Precharge option for each burst access  
Programmable CAS latency: 6 to 20 tCK  
Programmable Write latency: 3 to 7 tCK  
Programmable CRC READ latency: 0 to 2 tCK  
Programmable CRC WRITE latency: 8 to 11 tCK  
Digital tRAS lockout  
RDQS mode on EDC pin  
Data output mode for Vendor ID, density and FIFO depth  
Low Power modes  
On-chip temperature sensor with read-out  
Auto refresh and self refresh modes  
32ms data retention (8k cycles)  
Automatic temperature sensor controlled self refresh rate  
On-die termination (ODT): nom. values of 60 Ω or 120 Ω  
Pseudo open drain (POD–15) compatible outputs (40 Ω  
pulldown, 60 Ω pullup)  
8 internal banks  
4 bank groups for tCCD = 3 tCK  
8n prefetch architecture: 256 bit per array Read or Write  
access  
ODT and output driver strength auto-calibration with  
Burst Length: 8 only  
Data bus inversion (DBI) and address bus inversion (ABI)  
Input/output PLL on/off mode  
external resistor ZQ pin (120 Ω)  
Programmable termination and driver strength offsets  
Selectable external or internal VREF for data inputs;  
programmable offsets for internal VREF  
Separate external VREF for address / command inputs  
Boundary Scan function with SEN pin  
Mirror function with MF pin  
Address training: address input monitoring via DQ pins  
WCK2CK clock training: phase information via EDC pins  
Data read and write training via Read FIFO  
(FIFO depth = 5)  
Read FIFO pattern preload by LDFF command  
Direct write data load to Read FIFO by WRTR command  
Consecutive read of Read FIFO by RDTR command  
Programmable EDC hold pattern for CDR  
Read/Write data transmission integrity secured by cyclic  
redundancy check (CRC–8)  
V
V
DD 1.5V +/- 3%  
DDQ 1.5V +/- 3%  
PG-TFBGA 170  
RoHS Compliant Product1)  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev. 1.20, 2008-12  
4
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
TABLE 1  
Ordering Information  
Part Number1)  
Organization  
Max. Data Rate  
(Gbps/pin)  
Package  
IDGV51-05A1F1C – 40X  
IDGV51-05A1F1C – 50X  
IDGV51-05A1F1C – 55X  
×32 / x16  
4.0  
5.0  
5.5  
PG-TFBGA 170  
1) I: Qimonda Identifier, D: DRAM, GV: GDDR5, 51: 512Mbit, 0: 1 x CS, 5: x32, A1: 1st node, F1: FBGA, C: Commercial 0° - 85/95°C  
1.2  
Description  
The Qimonda GDDR5 SGRAM is a high speed dynamic random-access memory designed for applications requiring high  
bandwidth. It contains 536,870,912 bits and is internally configured as a 8-bank DRAM.  
The GDDR5 SGRAM uses a 8n prefetch architecture and DDR interface to achieve high-speed operation. It can be configured  
to operate in x32 mode or x16 (clamshell) mode. The mode is detected during device initialization. The GDDR5 interface  
transfers two 32 bit wide data words per WCK clock cycle to/from the I/O pins. Corresponding to the 8n prefetch a single write  
or read access consists of a 256 bit wide, two CK clock cycle data transfer at the internal memory core and eight corresponding  
32 bit wide one-half WCK clock cycle data transfers at the I/O pins.  
The GDDR5 SGRAM operates from a differential clock CK and CK. Commands are registered at every rising edge of CK.  
Addresses are registered at every rising edge of CK and every rising edge of CK.  
GDDR5 replaces the pulsed strobes (WDQS & RDQS) used in previous DRAMs such as GDDR4 with a free running differential  
forwarded clock (WCK/WCK) with both input and output data registered and driven respectively at both edges of the forwarded  
WCK.  
Read and write accesses to the GDDR5 SGRAM are burst oriented; accesses start at a selected location and continue for a  
total of eight data words. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or  
WRITE command. The address bits registered coincident with the ACTIVE command and the next rising CK edge are used to  
select the bank and the row to be accessed. The address bits registered coincident with the READ or WRITE command and  
the next rising CK edge are used to select the bank and the column location for the burst access.  
Rev. 1.20, 2008-12  
5
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
1.3  
Operating Frequency Ranges  
Figure 1 provides an overview of the operating frequency ranges for PLL-on and PLL-off operation in normal and RDQS  
modes.  
FIGURE 1  
Operating Modes and Frequency Ranges  
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Rev. 1.20, 2008-12  
6
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
2
Configuration  
2.1  
Signal Description  
TABLE 2  
Signal Description  
Signal  
Type Detailed Function  
CK, CK  
Input  
Clock: CK and CK are differential clock inputs. Command inputs are latched on the rising edge of  
CK. Address inputs are latched on the rising edge of CK and the rising edge of CK. All latencies  
are referenced to CK. CK and CK are externally terminated.  
WCK01,  
WCK01,  
WCK23,  
WCK23  
Input  
Data Clocks: WCK and WCK are differential clocks used for WRITE data capture and READ data  
output. WCK01/WCK01 is associated with DQ0-DQ15, DBI0, DBI1, EDC0 and EDC1.  
WCK23/WCK23 is associated with DQ16-DQ31, DBI2, DBI3, EDC2 and EDC3. WCK clocks  
operate at nominally twice the CK clock frequency.  
CKE  
Input  
Clock Enable: CKE LOW activates and CKE HIGH deactivates internal clock, device input buffers  
and output drivers. Taking CKE HIGH provides Precharge Power-Down and Self Refresh  
operations (all banks idle), or Active Power-Down (row active in any bank). CKE is synchronous for  
Power-Down entry and exit and for Self Refresh entry and exit. CKE must be maintained LOW  
throughout READ and WRITE accesses.  
Input buffers excluding CK, CK, CKE, WCK01, WCK01, WCK23, WCK23 are disabled during  
Power-Down. Input buffers excluding CKE are disabled during Self Refresh.  
The value of CKE latched at power-up with RESET going HIGH determines the termination value  
of the address and command inputs.  
CS  
Input  
Chip Select: CS LOW enables, and CS HIGH disables the command decoder. All commands are  
masked when CS is registered HIGH, but internal command execution continues. CS provides for  
individual device selection on memory channels with multiple memory devices. CS is considered  
part of the command code.  
RAS, CAS, WE Input  
Command inputs: RAS, CAS, and WE (along with CS) define the command to be entered.  
BA0 - BA3  
Input  
Bank Address inputs: BA0-BA3 select to which internal bank an ACTIVE, READ, WRITE or  
PRECHARGE command is being applied. BA0-BA3 also determine which Mode Register is  
accessed with a MODE REGISTER SET command. BA0-BA3 are sampled with the rising edge of  
CK.  
A0 - A11  
Input  
Address inputs: A0-A11 provide the row address for ACTIVE commands. A0-A5(A6) provide the  
column address and A8 defines the auto precharge function for READ and WRITE commands, to  
select one location out of the memory array in the respective bank. The address inputs also provide  
the op-code during a MODE REGISTER SET command, and the data bits during LDFF commands.  
A8-A11 are sampled with the rising edge of CK and A0-A7 are sampled with the rising edge of CK.  
DQ0 - DQ31  
DBI0 - DBI3  
I/O  
I/O  
Data Input/Output: 32 bit data bus  
Data bus inversion: DBI0 is associated with DQ0-DQ7, DBI1 with DQ8-DQ15, DBI2 with DQ16-  
DQ23, and DBI3 with DQ24-DQ31.  
Rev. 1.20, 2008-12  
7
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
Signal  
Type Detailed Function  
EDC0 - EDC3 Output Error Detection Code: The calculated CRC data is transmitted on these pins. Used also for x16  
mode detection, EDC hold pattern and RDQS function. EDC0 is associated with DQ0-DQ7, EDC1  
with DQ8-DQ15, EDC2 with DQ16-DQ23, and EDC3 with DQ24-DQ31.  
ABI  
Input  
-
Address bus inversion  
ZQ  
Impedance Reference: external reference pin for auto-calibration  
RESET  
Input  
Reset: RESET is a VDDQ CMOS input. RESET LOW asynchronously initiates a full chip reset. With  
RESET LOW all ODTs are disabled.  
MF  
Input  
Input  
Mirror Function: MF is a VDDQ CMOS input. Must be tied to Power or Ground.  
Scan Enable: SEN is a VDDQ CMOS input. Must be tied to Ground when not in use.  
SEN  
VREFC  
VREFD  
Supply Reference voltage for command and address inputs.  
Supply Reference voltage for DQ and DBI inputs.  
V
V
DD, VSS  
Supply Power and Ground for the internal logic.  
DDQ, VSSQ  
Supply Isolated power and ground for the input and output buffers.  
NC  
-
Not Connected.  
2.2  
Ballout and Mirror Function Mode  
The GDDR5 SGRAM provides a mirror function (MF) pin to change the physical location of command, address, data and WCK  
pins and assist in routing devices back to back. The pins affected by this Mirror Function mode are listed in Table 3. Figure 2  
and Figure 3 show the ballouts for non-mirrored (MF=0) and mirrored (MF=1) modes.  
TABLE 3  
Ball Assignment with Mirror Function  
Ball Signal  
MF=0  
Ball Signal  
MF=0  
Ball Signal  
MF=0  
Ball Signal  
Ball Signal  
MF=1  
MF=1  
MF=1  
MF=0  
MF=1  
MF=0 MF=1  
A2  
B2  
C2  
D2  
E2  
F2  
DQ1  
DQ3  
DQ25 G3 RAS  
CAS  
T4  
U4  
D5  
H5  
DQ26  
DQ24  
DQ2  
DQ0  
H11 BA0 A2 BA2 A4 E13 DQ13 DQ21  
K11 BA2 A4 BA0 A2 F13 DQ15 DQ23  
DQ27 L3  
CAS  
DQ0  
DQ2  
RAS  
EDC0 EDC3 A4  
DQ24  
DQ26  
WCK01 WCK23 M11 DQ22  
A9 A1 A11 A6 N11 DQ20  
A11 A6 A9 A1 T11 DQ18  
WCK23 WCK01 U11 DQ16  
DQ14  
DQ12  
DQ10  
DQ8  
M13 DQ23 DQ15  
N13 DQ21 DQ13  
P13 DBI2 DBI1  
R13 EDC2 EDC1  
T13 DQ19 DQ11  
U13 DQ17 DQ9  
DBI0  
DQ5  
DQ7  
DBI3  
B4  
DQ29 D4  
DQ31 E4  
WCK01 WCK23 K5  
DQ4  
DQ6  
DQ28  
DQ30  
P5  
M2 DQ31 DQ7  
F4  
H4  
K4  
H10 BA3 A3 BA1 A5 G12 CS  
K10 BA1 A5 BA3 A3 L12 WE  
WE  
N2  
P2  
R2  
T2  
U2  
DQ29 DQ5  
DBI3 DBI0  
A10 A0 A8 A7  
A8 A7  
CS  
A10 A0 A11 DQ8  
DQ16  
DQ18  
DQ20  
DQ22  
A13 DQ9  
B13 DQ11  
C13 EDC1  
D13 DBI1  
DQ17  
DQ19  
EDC2  
DBI2  
EDC3 EDC0 M4 DQ30  
DQ6  
DQ4  
B11 DQ10  
E11 DQ12  
DQ27 DQ3  
DQ25 DQ1  
N4  
P4  
DQ28  
WCK23 WCK01 F11 DQ14  
Functions within the GDDR5 SGRAM that refer to external signals are transparent with respect to Mirror Function mode,  
meaning that the signal names shown in the respective functional description apply both to mirrored (MF=1) and non-mirrored  
(MF=0) modes. The referenced package pin is determined by the Mirror Function mode the devices is configured to.  
Rev. 1.20, 2008-12  
8
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
FIGURE 2  
Ballout, MF = 0 (Top View)  
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Rev. 1.20, 2008-12  
11092007-TJ6A-WC0N  
9
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
FIGURE 3  
Ballout, MF = 1 (Top View)  
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966  
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033*ꢀꢀꢉꢀ
 
Rev. 1.20, 2008-12  
11092007-TJ6A-WC0N  
10  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
2.3  
Addressing  
The GDDR5 SGRAM uses a DDR address scheme to reduce pins required on the GDDR5 SGRAM as shown in Table 4. The  
address should be provided to the GDDR5 SGRAM in two parts; the first half is latched on the rising edge of CK along with the  
command pins such as RAS, CAS and WE; the second half is latched on the rising edge of CK.  
The use of DDR addressing allows all address values to be latched in at the same rate as the SDR commands. All addresses  
related to command access have been positioned for latching on the initial rising edge for faster decoding.  
TABLE 4  
Address Pairs  
Clock Edge  
Address Inputs  
Rising CK  
Rising CK  
A8  
A7  
A11  
A6  
BA1  
A5  
BA2  
A4  
BA3  
A3  
BA0  
A2  
A9  
A1  
A10  
A0  
Two addressing schemes are supported for x32 mode and x16 mode, which differ only in the number of valid column  
addresses, as shown in Table 5.  
TABLE 5  
Addressing Scheme  
16Mx32  
32Mx16  
Row Address  
Column addresses  
Number of Banks  
Bank address  
Autoprecharge  
Refresh  
A0-A11  
A0-A5  
8
A0-A11  
A0-A6  
8
BA0-BA2  
A8  
BA0-BA2  
A8  
8K/32 ms  
3.9 μs  
2 KB  
8K/32 ms  
3.9 μs  
2 KB  
Refresh period  
Page size  
Bank Groups  
4
4
Rev. 1.20, 2008-12  
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Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
2.4  
Commands  
TABLE 6  
Command Truth Table  
Operation  
Code  
CKE CKE CS RAS CAS WE BA3- A11 A10 A8 A6-A7, A0-A5 Note  
n-1  
n
BA0  
A9  
(A6)  
1)2)8)  
1)2)8)  
1)2)3)  
1)2)4)  
1)2)5)9)  
1)2)5)  
1)2)7)  
1)2)  
Device Deselect  
No Operation  
DESEL  
NOP  
MRS  
ACT  
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
X
H
L
X
H
L
H
L
L
L
L
L
L
L
L
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
Mode Register Set  
Bank Activate  
Read  
MRA OPCODE  
L
H
H
H
H
H
L
BA  
BA  
BA  
BST  
X
Row Address  
RD  
H
H
H
H
H
H
H
H
L
L
H
H
L
L
L
L
L
L
L
H
L
X
CA  
CA  
Read with Autoprecharge  
Load FIFO  
RDA  
LDFF  
RDTR  
WR  
X
L
DATA  
Read Training  
Write  
H
L
L
X
X
X
X
X
X
1)2)5)  
1)2)5)  
1)2)5)  
1)2)5)  
BA  
BA  
BA  
BA  
L
CA  
CA  
CA  
CA  
Write with Autoprecharge  
WRA  
L
L
H
L
Write with Single Byte Mask WSM  
L
H
H
Write with Autoprecharge,  
Single Byte Mask  
WSMA  
L
H
1)2)5)  
1)2)5)  
Write with Double Byte Mask WDM  
L
L
L
L
L
L
H
H
L
L
L
L
BA  
BA  
H
H
L
L
L
X
X
CA  
CA  
Write with Autoprecharge,  
Double Byte Mask  
WDMA  
H
1)2)  
1)2)  
1)2)  
1)6)  
1)  
Write Training  
Precharge  
WRTR  
PRE  
L
L
L
L
L
L
H
L
L
L
L
H
L
H
L
L
H
L
H
L
L
L
X
H
X
X
X
X
H
X
X
X
X
L
X
X
X
X
X
X
X
X
X
X
H
H
L
L
BA  
X
L
Precharge All  
Refresh  
PREALL L  
L
L
H
X
X
REF  
PDE  
L
L
L
H
X
H
X
H
H
X
H
X
Power Down Mode Entry  
X
H
X
H
L
X
H
X
H
L
X
1)  
Power Down Mode Exit  
PDX  
H
L
X
X
X
X
X
X
1)6)  
1)  
Self Refresh Entry  
Self Refresh Exit  
SRE  
SRX  
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
H
X
H
X
H
1) H = logic H level; L = logic L level; X = Don’t Care. Signal may be H or L, but not floating  
2) Addresses shown are logical addresses; physical addresses are inverted when address bus inversion (ABI) is activated and ABI=L  
3) BA0-BA3 provide the Mode Register address (MRA), A0-A11 the opcode to be loaded  
4) BA0-BA3 provide the bank address (BA), A0-A11 provide the row address (RA)  
5) BA0-BA3 provide the bank address, A0-A5 (A6) provide the column address (CA); no sub-word addressing within a burst of 8  
6) This command is REFRESH when CKE(n) = L, and Self Refresh Entry when CKE(n) is H  
7) BA0-BA3 and CA are used to select burst location (BST) and data respectively  
8) DESELECT and NO OPERATION are functionally interchangeable  
9) In address training mode READ is decoded from the command pins only with RAS = H, CAS = L, WE = H  
Rev. 1.20, 2008-12  
12  
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
3
Mode Registers  
The Mode Registers define the specific mode of operation. MR0 to MR6 and MR15 are defined as shown in the overview in  
Figure 4. MR7 to MR14 are not used.  
All Mode Registers are programmed via the MODE REGISTER SET (MRS) command and will retain the stored information  
until they are reprogrammed or a subsequent reset. Mode Registers must be loaded when all banks are idle and no bursts are  
in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of  
these requirements will result in unspecified operation.  
All Mode Registers are initialized upon reset with all 0’s (exception: MR4, bits A0-A3: ’1111’). However, the user shall program  
all Mode Registers to the desired values e.g upon device initialization.  
Reserved states should not be used, as unknown operation or incompatibility with future versions may result. RFU bits are  
reserved for future use and must be programmed to 0.  
FIGURE 4  
Mode Registers Overview  
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Rev. 1.20, 2008-12  
11092007-TJ6A-WC0N  
13  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
4
Electrical Characteristics  
4.1  
Absolute Maximum Ratings  
TABLE 7  
Absolute Maximum Ratings  
Parameter  
Symbol Ratings  
Unit  
Min.  
Max.  
Device supply voltage  
Output buffer supply voltage  
Input Voltage  
VDD  
VDDQ  
VIN  
-0.5  
-0.5  
-0.5  
-0.5  
-55  
2.0  
V
2.0  
V
2.0  
V
Output Voltage  
VOUT  
TSTG  
TJ  
2.0  
V
Storage Temperature  
Junction Temperature  
Short Circuit Output Current  
+150  
+125  
50  
°C  
°C  
mA  
IOUT  
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage of  
the device. This is a stress rating only, and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of these specification is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
Rev. 1.20, 2008-12  
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Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
4.2  
Operation Conditions  
TABLE 8  
DC Operating Conditions  
Parameter 1)  
Symbol  
POD-15  
Unit Notes  
Min.  
Typ.  
Max.  
2)  
Device supply voltage  
VDD  
1.455  
1.5  
1.5  
1.545  
V
2)  
Output supply voltage  
VDDQ  
1.455  
1.545  
V
3)4)  
Reference voltage for DQ/DBI inputs  
VREFD  
0.69 * VDDQ  
0.69 * VDDQ  
0.71 * VDDQ  
0.71 * VDDQ  
V
5)  
Reference voltage for command and address inputs VREFC  
Input logic high voltage for address/command inputs VIHA(DC)  
Input logic low voltage for address/command inputs VILA(DC)  
Input logic high voltage for DQ/DBI inputs with VREFD VIHD(DC)  
Input logic low voltage for DQ/DBI inputs with VREFD VILD(DC)  
Input logic high voltage for RESET, SEN + MF inputs VIHR  
Input logic low voltage for RESET, SEN + MF inputs VILR  
V
VREFC + 0.15  
V
V
V
V
V
V
V
VREFC - 0.15  
VREFD + 0.1  
VREFD - 0.1  
1.05  
0.3  
Input logic high voltage in scan mode for all input  
except RESET, SEN + MF inputs  
VIHS  
VDDQ - 0.3  
Input logic low voltage in scan mode for all inputs  
VILS  
0.3  
V
6)  
Input logic high voltage for EDC1/2 (x16 mode detect) VIHX  
Input logic low voltage for EDC1/2 (x16 mode detect) VILX  
VDDQ - 0.3  
V
6)  
0.3  
V
CK, CK, WCK and WCK single ended input voltage  
Clock input mid-point voltage  
VINCK  
- 0.3  
V
DDQ + 0.3  
REFC + 0.1  
V
7)8)9)10)  
VMP(DC)  
VREFC - 0.1  
V
V
8)11)  
CK/CK DC input differential voltage  
WCK/WCK DC input differential voltage  
VIDCK(DC) 0.22  
VIDWCK(DC) 0.2  
+5  
V
9)12)13)  
V
14)  
Input leakage current (any input 0 V VIN VDDQ; all IIL  
-5  
µA  
other pins not under test = 0 V)  
14)  
Output leakage current (DQs are disabled; 0 V VOUT IOZ  
-5  
+5  
µA  
VDDQ  
)
Output logic low voltage  
External resistor value  
VOL(DC)  
0.62  
125  
V
ZQ  
115  
120  
Ω
1) 0°C Tc 95°C. All voltages are measured at the package pins.  
2) GDDR5 SGRAMs are designed to tolerate PCB designs with separate VDDQ and VDD power regulators.  
3) AC noise in the system is estimated at 50mV peak-to-peak for the purpose of DRAM design.  
4) Source of reference voltage and control of Reference voltage for DQ and DBI pins is determined by VREFD and VREFD Offset Mode  
Registers.  
5) External VREFC is to be provided by the controller as there is no alternative supply.  
6)  
VIHX and VILX define the input voltage levels for the receiver that detects x32 mode or x16 mode with RESET going HIGH..  
7) This provides a minimum of 0.95V and a maximum of 1.15V, and is always 70% of VDDQ with POD-15. DRAM timings relative to CK cannot  
be guaranteed if these limits are exceeded. .  
8) For AC operations, all DC clock requirements must be satisfied as well.  
9) The value of VIXCK and VIXWCK is expected to equal 70% of VDDQ for the transmitting device and must track variations of the DC level of the  
same.  
Rev. 1.20, 2008-12  
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Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
10) The CK and CK input reference level (for timing referenced to CK and CK) is the point at which CK and CK cross.  
11) VIDCK is the magnitude of the difference between the input level on CK and the input level on CK.  
12) The WCK and WCK input reference level (for timing referenced to WCK and WCK) is the point at which WCK and WCK cross.  
13) VIDWCK is the magnitude of the difference between the input level on WCK and the input level on WCK.  
14) IIL and IOL are measured with ODT off.  
TABLE 9  
AC Operating Conditions  
Parameter 1)2)  
Symbol  
POD-15  
typ.  
Unit Notes  
min.  
max.  
Input logic high voltage for address/command inputs VIHA(AC)  
Input logic low voltage for address/command inputs VILA(AC)  
Input logic high voltage for DQ/DBI inputs with VREFD VIHD(AC)  
Input logic low voltage for DQ/DBI inputs with VREFD VILD(AC)  
V
REFC + 0.2  
V
V
V
V
V
V
VREFC - 0.2  
VREFD + 0.15  
VREFD - 0.15  
3)4)  
5)6)  
3)7)  
5)7)  
CK/CK input differential voltage  
VIDCK(AC) 0.4  
VIDWCK(AC) 0.3  
WCK/WCK input differential voltage  
CK/CK input crossing point voltage  
WCK/WCK input crossing point voltage  
VIXCK(AC)  
V
REFC - 0.12  
REFD - 0.1  
V
REFC + 0.12 V  
REFD + 0.1  
VIXWCK(AC)  
V
V
V
1) 0°C Tc 95°C. All voltages are measured at the package pins.  
2) For optimum performance it is recommended that signal swings are larger than shown in the table.  
3) The CK and CK input reference level (for timing referenced to CK and CK) is the point at which CK and CK cross.  
4) IDCK is the magnitude of the difference between the input level on CK and the input level on CK.  
5) The WCK and WCK input reference level (for timing referenced to WCK and WCK) is the point at which WCK and WCK cross..  
6) IDWCK is the magnitude of the difference between the input level on WCK and the input level on WCK.  
V
V
7) The value of VIXCK and VIXWCK is expected to equal 70% of VDDQ for the transmitting device and must track variations of the DC level of the  
same.  
Rev. 1.20, 2008-12  
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Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
5
Package  
5.1  
Package Outline  
FIGURE 5  
Package Outline  
)32B3*ꢏ7)%*$BBꢏꢆꢈꢀꢏꢀꢃꢉ  
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IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
List of Illustrations  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
Figure 5  
Operating Modes and Frequency Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Ballout, MF = 0 (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Ballout, MF = 1 (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Mode Registers Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
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Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
List of Tables  
Table 1  
Table 2  
Table 3  
Table 4  
Table 5  
Table 6  
Table 7  
Table 8  
Table 9  
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Signal Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Ball Assignment with Mirror Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Address Pairs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Addressing Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Command Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Rev. 1.20, 2008-12  
19  
11092007-TJ6A-WC0N  
Internet Data Sheet  
IDGV51-05A1F1C  
512MBit GDDR5 Graphics RAM  
Contents  
General Use Restriction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Operating Frequency Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
1.1  
1.2  
1.3  
2
Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Signal Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Ballout and Mirror Function Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
2.1  
2.2  
2.3  
2.4  
3
Mode Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
4
4.1  
4.2  
Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
5
Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
5.1  
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Rev. 1.20, 2008-12  
20  
11092007-TJ6A-WC0N  
Internet Data Sheet  
Edition 2008-12  
Published by Qimonda AG  
Gustav-Heinemann-Ring 212  
D-81739 München, Germany  
© Qimonda AG 2008.  
All Rights Reserved.  
Legal Disclaimer  
THE INFORMATION GIVEN IN THIS INTERNET DATA SHEET SHALL IN NO EVENT BE REGARDED AS A GUARANTEE  
OF CONDITIONS OR CHARACTERISTICS. WITH RESPECT TO ANY EXAMPLES OR HINTS GIVEN HEREIN, ANY  
TYPICAL VALUES STATED HEREIN AND/OR ANY INFORMATION REGARDING THE APPLICATION OF THE DEVICE,  
QIMONDA HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND, INCLUDING WITHOUT  
LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in question please  
contact your nearest Qimonda Office.  
Under no circumstances may the Qimonda product as referred to in this Internet Data Sheet be used in  
1. Any applications that are intended for military usage (including but not limited to weaponry), or  
2. Any applications, devices or systems which are safety critical or serve the purpose of supporting, maintaining, sustaining  
or protecting human life (such applications, devices and systems collectively referred to as "Critical Systems"), if  
a) A failure of the Qimonda product can reasonable be expected to - directly or indirectly -  
(i) Have a detrimental effect on such Critical Systems in terms of reliability, effectiveness or safety; or  
(ii) Cause the failure of such Critical Systems; or  
b) A failure or malfunction of such Critical Systems can reasonably be expected to - directly or indirectly -  
(i) Endanger the health or the life of the user of such Critical Systems or any other person; or  
(ii) Otherwise cause material damages (including but not limited to death, bodily injury or significant damages to  
property, whether tangible or intangible).  
www.qimonda.com  

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