QPA1014S2 [QORVO]
2.7 â 3.7 GHz 40 Watt GaN Amplifier;
| 型号： | QPA1014S2 |
| 厂家： | 
Qorvo |
| 描述： | 2.7 â 3.7 GHz 40 Watt GaN Amplifier |
| 文件： | 总16页 (文件大小：746K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Product Description
QPA1014
Qorvo’s QPA1014 is a high-power, S-band MMIC amplifier
fabricated on Qorvo’s 0.25um GaN on SiC production
process (QGaN25). Covering 2.7ꢀ–ꢀ3.7 GHz, the QPA1014
provides 40 W of saturated output power with 24 dB large
signal gain and 48% power-added efficiency.
The QPA1014 is packaged in a plastic overmold QFN with
a pure Cu paddle offering easy handling with good thermal
properties. As a result, the QPA1014 has bias flexibility
allowing the user to vary the voltage to achieve optimum
system performance while maintaining high reliability.
Product Features
The QPA1014 is matched to 50 ohms with integrated DC
blocking caps on both I/O ports. With the high performance,
good thermal characteristics and ease of handling and
system integration, the QPA1014 is ideal for use in both
commercial and military radar systems.
• Frequency Range: 2.7 – 3.7 GHz
• Pout: 46 dBm (PIN = 22 dBm)
• Large Signal Gain: 24 dB (PIN = 22 dBm)
• PAE: 48 % (PIN = 22 dBm)
• Bias: VD = 28 V, IDQ = 450 mA, VG = −2.7 V (Typ)
• Supports Long Pulse Operation
Lead-free and RoHS compliant.
• Package Dimensions: 6.0 x 6.0 x 0.85 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
• Military Radar
• Commercial Radar
Ordering Information
RF In
RF Out
Part
QPA1014
Description
2.7–3.7 GHz 30 W GaN Power
Amplifier
QPA1014S2
Sample Box of 2
QPA1014PCB4B02 QPA1014 Eval Board
- 1 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 28 V, IDQ = 450 mA, Pulse Width = 100 us, Duty Cycle = 10%
Parameter
Min
Typ
Max
Units
Operational Frequency Range
2.7
3.7
GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.7 GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.7 GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.7 GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.7 GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.7 GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.5 GHz
Frequency = 2.7 GHz
Frequency = 3.1 GHz
Frequency = 3.5 GHz
45.9
46.2
Output Power
(PIN = 22ꢀdBm)
dBm
%
45.5
48.1
Power Added Efficiency
(PIN = 22ꢀdBm)
53.2
51.1
31.8
Small Signal Gain
Input Return Loss
Output Return Loss
30.3
dB
29.3
13.5
25.5
dB
7.5
10.0
22.0
dB
10.0
−17.5
−29.5
−37.0
−54.5
−62.0
−64.0
−0.013
−0.049
2nd Harmonic
(POUT = 40 dBm)
dBc
dBc
3rd Harmonic
(POUT = 40 dBm)
Output Power Temperature Coefficient (PIN = 22 dBm)
Small Signal Gain Temperature Coefficient
dBm/°C
dB/°C
Recommended Operating Conditions
Parameter
Drain Voltage
Value
28 V
Drain Current (quiescent, IDQ
)
450 mA
3.7 A
Drain Current (under drive, ID)
Gate Voltage
−2.7 V
Operating Temperature Range
−40 to 85ꢀ°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
- 2 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Frequency vs. Temp.
Power Added Eff. vs. Frequency vs. Temp.
50
49
48
47
46
45
44
43
42
41
40
70
65
60
55
50
45
40
35
30
25
VD = 28 V, IDQ = 450 mA
VD = 28 V, IDQ = 450 mA
PIN = 20 dBm
PIN = 22 dBm
PIN = 24 dBm
PIN = 20 dBm
PIN = 22 dBm
PIN = 24 dBm
- 40 C
+25 C
+85 C
3.4
- 40 C
+25 C
+85 C
2.4
2.6
2.8
3.0
3.2
3.6
3.8
3.8
3.8
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Gate Current vs. Frequency vs. Temp.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.0
VD = 28 V, IDQ = 450 mA
VD = 28 V, IDQ = 450 mA
1.5
1.0
0.5
0.0
-0.5
PIN = 20 dBm
PIN = 22 dBm
PIN = 24 dBm
PIN = 20 dBm
PIN = 22 dBm
PIN = 24 dBm
- 40 C
+25 C
+85 C
3.4
- 40 C
+25 C
+85 C
2.4
2.6
2.8
3.0
3.2
3.6
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Power Added Eff. vs. Frequency vs. VD
Output Power vs. Frequency vs. VD
52
50
48
46
44
42
40
38
70
65
60
55
50
45
40
35
30
25
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
25 V
2.8
28 V
30 V
32 V
3.4
25 V
2.8
28 V
30 V
32 V
3.4
2.4
2.6
3.0
3.2
3.6
2.4
2.6
3.0
3.2
3.6
3.8
Frequency (GHz)
Frequency (GHz)
- 3 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA, PW = 100 us, Duty Cycle = 10%
Drain Current vs. Frequency vs. VD
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
Gate Current vs. Frequency vs. VD
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
25 V
2.8
28 V
3.0
30 V
3.2
32 V
3.4
25 V
2.8
28 V
3.0
30 V
3.2
32 V
3.4
2.4
2.6
3.6
3.8
3.8
3.8
2.4
2.6
3.6
3.8
3.8
3.8
Frequency (GHz)
Frequency (GHz)
Power Added Eff. vs. Frequency vs. IDQ
Output Power vs. Frequency vs. IDQ
48
47
46
45
44
43
70
65
60
55
50
45
40
35
30
25
PIN = 22 dBm, VD = 28 V, Temp. = 25 °C
PIN = 22 dBm, VD = 28 V, Temp. = 25 °C
350 mA
3.0
450 mA
3.2 3.4
350 mA
3.0
450 mA
3.2 3.4
2.4
2.6
2.8
3.6
2.4
2.6
2.8
3.6
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Frequency vs. IDQ
Gate Current vs. Frequency vs. IDQ
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
PIN = 22 dBm, VD = 28 V, Temp. = 25 °C
PIN = 22 dBm, VD = 28 V, Temp. = 25 °C
3.5
3.0
2.5
2.0
1.5
1.0
350 mA
3.0
450 mA
3.2 3.4
350 mA
3.0
450 mA
3.2 3.4
2.4
2.6
2.8
3.6
2.4
2.6
2.8
3.6
Frequency (GHz)
Frequency (GHz)
- 4 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA, PW = 100 us, Duty Cycle = 10%
Power Added Eff. vs. PIN vs. Temp.
Output Power vs. Input Power vs. Temp.
50
48
46
44
42
40
38
36
34
32
30
28
70
60
50
40
30
20
10
0
VD = 28 V, IDQ = 450 mA, Freq. = 3.1 GHz
VD = 28 V, IDQ = 450 mA, Freq. = 3.1 GHz
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
2
2
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
Drain Current vs. Input Power vs. Temp.
36
34
32
30
28
26
24
22
20
18
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VD = 28 V, IDQ = 450 mA, Freq. = 3.1 GHz
VD = 28 V, IDQ = 450 mA, Freq. = 3.1 GHz
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Power Added Eff. vs. Input Power vs. VD
Output Power vs. Input Power vs. VD
50
48
46
44
42
40
38
36
34
32
30
28
70
60
50
40
30
20
10
0
Temp. = 25 °C, IDQ = 450 mA, Freq. = 3.1 GHz
Temp. = 25 °C, IDQ = 450 mA, Freq. = 3.1 GHz
25 V
28 V
30 V
32 V
25 V
28 V
30 V
32 V
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
- 5 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA, PW = 100 us, Duty Cycle = 10%
Power Gain vs. Input Power vs. VD
Temp. = 25 °C, IDQ = 450 mA, Freq. = 3.1 GHz
Drain Current vs. Input Power vs. VD
Temp. = 25 °C, IDQ = 450 mA, Freq. = 3.1 GHz
36
34
32
30
28
26
24
22
20
18
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 V
28 V
30 V
32 V
25 V
28 V
30 V
32 V
2
2
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
Power Added Eff. vs. Input Power vs. IDQ
50
48
46
44
42
40
38
36
34
32
30
28
70
60
50
40
30
20
10
0
VD = 28 V, Temp. = 25 °C, Freq. = 3.1 GHz
VD = 28 V, Temp. = 25 °C, Freq. = 3.1 GHz
350 mA
450 mA
350 mA
450 mA
4
6
8
10 12 14 16 18 20 22 24
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24
Input Power (dBm)
Power Gain vs. Input Power vs. IDQ
Drain Current vs. Input Power vs. IDQ
36
34
32
30
28
26
24
22
20
18
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VD = 28 V, Temp. = 25 °C, Freq. = 3.1 GHz
VD = 28 V, Temp. = 25 °C, Freq. = 3.1 GHz
350 mA
450 mA
350 mA
450 mA
4
6
8
10 12 14 16 18 20 22 24
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24
Input Power (dBm)
- 6 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Long Pulse Comparison)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA
Output Power vs. Freq., Long Pulse
Power Added Eff. vs. Freq., Long Pulse
50
49
48
47
46
45
44
43
42
41
40
70
65
60
55
50
45
40
35
30
25
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
100us 10% 300us 20% 15ms 30%
100us 10% 300us 20% 15ms 30%
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq., Long Pulse
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
Gate Current vs. Freq., Long Pulse
PIN = 22 dBm, IDQ = 450 mA, Temp. = 25 °C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
100us 10% 300us 20% 15ms 30%
100us 10% 300us 20% 15ms 30%
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
- 7 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀHarmonics
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA, PW = 100 us, Duty Cycle = 10%
2nd Harmonic vs. POUT vs. Temp.
3rd Harmonic vs. POUT vs. Temp.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
VD = 28 V, IDQ = 450 mA, F0 = 3.1 GHz
VD = 28 V, IDQ = 450 mA, F0 = 3.1 GHz
- 40 C
+25 C
+85 C
42
- 40 C
+25 C
+85 C
42
32
32
32
34
36
38
40
44
46
46
46
32
32
32
34
36
38
40
44
46
46
46
Output Power (dBm)
Output Power (dBm)
2nd Harmonic vs. POUT vs. Freq.
3rd Harmonic vs. POUT vs. Freq.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
VD = 28 V, IDQ = 450 mA, Temp = 25 °C
VD = 28 V, IDQ = 450 mA, Temp = 25 °C
2.7 GHz
36
3.1 GHz
40
3.5 GHz
42
2.7 GHz
36
3.1 GHz
40
3.5 GHz
42
34
38
44
34
38
44
Output Power (dBm)
Output Power (dBm)
2nd Harmonic vs. POUT vs. VD
IDQ = 450 mA, Temp. = 25 °C, F0 = 3.1 GHz
3rd Harmonic vs. POUT vs. VD
IDQ = 450 mA, Temp. = 25 °C, F0 = 3.1 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
25 V
28 V
30 V
42
25 V
28 V
30 V
42
34
36
38
40
44
34
36
38
40
44
Output Power (dBm)
Output Power (dBm)
- 8 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA
Small Signal Gain vs. Freq. vs. Temp.
Small Signal Gain vs. Freq. vs. VD
40
35
30
25
20
15
40
35
30
25
20
15
VD = 28 V, IDQ = 450 mA
Temp. = 25 °C, IDQ = 450 mA
25 V
2.8
28 V
30 V
3.4
-40 C
3.0
+25 C
3.2
+85 C
3.4
2.4
2.6
2.8
3.6
3.8
2.4
2.6
3.0
3.2
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
Input Return Loss vs. Freq. vs. VD
0
0
VD = 28 V, IDQ = 450 mA
Temp. = 25 °C, IDQ = 450 mA
-40 C
+25 C
+85 C
25 V
28 V
30 V
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. VD
Output Return Loss vs. Freq. vs. Temp.
0
-5
0
-5
-40 C
+25 C
+85 C
VD = 28 V, IDQ = 450 mA
Temp. = 25 °C, IDQ = 450 mA
25 V
28 V
30 V
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
- 9 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 28 V, IDQ = 450 mA
Input Return Loss vs. Freq. vs. IDQ
VD = 28 V, Temp. = 25 °C
Small Signal Gain vs. Freq. vs. IDQ
40
35
30
25
20
15
0
-5
VD = 28 V, Temp. = 25 °C
375 mA
450 mA
500 mA
-10
-15
-20
-25
-30
375 mA
2.8
450 mA
3.2
500 mA
2.4
2.6
3.0
3.4
3.6
3.8
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency vs. IDQ
VD = 28 V, Temp. = 25 °C
0
-5
-10
-15
-20
-25
-30
375 mA 450 mA
500 mA
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Frequency (GHz)
- 10 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Tbase = 85°C
Value
1.43
Units
°C/W
Thermal Resistance (θJC) (1)
VD = 28 V, IDQ = 450 mA
PDISS = 12.6 W
Channel Temperature (TCH) (Quiescent)
°C
°C/W
°C
103
0.72
114
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF drive)
Notes:
Tbase = 85°C, VD = 28 V, IDQ = 450 mA, Freq = 2.7 GHz,
ID_Drive = 2.984 A, PIN = 25 dBm, POUT = 46.1 dBm,
PDISS = 40.5 W, PW = 100 us, DC = 10%
1. Thermal resistance measured to back of package.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Power Dissipation
- 11 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Applications Circuit
VD
VG
C1
10 uF
R2
C6
R1
1.8 Ω
C2
C4
1.8 Ω 0.01 uF
C5
1000 pF
1000 pF
C3
1000 pF
1000 pF
23
22
28 27 26
4
18
RF In
RF Out
Bias Up Procedure
1. Set ID limit to 4500mA, IG limit to 40mA
Bias Down Procedure
1. Turn off RF supply
2. Set VG to −6.0 V
2. Reduce VG to −6.0V. Ensure IDQ ~ 0mA
3. Set VD to 0ꢀV
3. Set VD +28 V
4. Adjust VG more positive until IDQ = 450mA (VG ~
4. Turn off VD supply
−2.7 V Typical)
5. Turn off VG supply
5. Apply RF signal
- 12 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Evaluation Board and Mounting Detail
C1
R4
R2
C5
C6
R3
C3
R5
R1
C4
C2
J1
J2
PCB Mounting Detail
(Vias shown open for detail)
Notes:
1. RF Layer is 0.008” thick Rogers Corp. RO40003C (εr = 3.55). Metal layers are 0.5 oz. copper.
2. Via holes under the DUT should be copper-filled to improve thermal and electrical performance.
Bill of Materials
Ref. Des.
C1
C2ꢀ–ꢀC5
C6
R1, R2
R3ꢀ–ꢀR5 1
J1, J2
Component
Value
Manuf.
Various
Various
Various
Various
Various
Part Number
Surface Mount Cap. CAP, 1206, 10uF, 20%, 50V, 20%, X5R
Surface Mount Cap. CAP, 0402, 1000pF, 10%, 100V, X7R
Surface Mount Cap. CAP, 0402, 0.01uF, ±10%, 50V, X7R
Surface Mount Res. RES, 1.8 OHM, ± 5%, 1/10 W, 0402
Surface Mount Res. RES, 0 OHM, ± 5%, 0402
RF Connector
2.92 mm End Launch
SW Microwave 1092–01A–5
Note:
1. Replace R3–R5 with a metal trace, as they are not needed for operation. Thus, they are not shown in the schematic.
- 13 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Mechanical Information
22 23 24 25 26 27 28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
29
14 13 12 11 10
9
8
Pin Description
Pin Number
1-3, 5-17, 19-21, 24-25
Symbol
NC
Description
No internal connection. Recommend grounding at the PCB level.
4
RF Input
RF Output
50 Ohm RF input. Pad is DC blocked.
18
50 Ohm RF output. Pad is DC blocked.
2nd Stage Drain Voltage; bias network is required (VD1 and VD2 can
be tied together in application)
22, 23
26
VD2
VD1
VG2
1st Stage Drain Voltage; bias network is required (VD1 and VD2 can be
tied together in application)
2nd Stage Gate Voltage; bias network is required (VG1 and VG2 can
be tied together in application)
27
1st Stage Gate Voltage; bias network is required (VG1 and VG2 can be
tied together in application)
28
29
VG1
GND
Ground connection (center pad).
- 14 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Absolute Maximum Ratings
Parameter
Valueꢀ/ꢀRange
40 V
QPA1014 Ig_max vs. TCH vs. Stage
90
80
70
60
50
40
30
20
10
0
Drain Voltage (VD)
Drain Current (ID1/ID2)
Gate Voltage Range
0.39 / 3.5 A
−8 to 0 V
Stage 1
Stage 2
Gate Current (IG)
See IG_Max plot
44.25 W
Total Ig_max
1
Dissipated Power (PDISS
)
Input Power (50 Ω, 85 °C)2
Input Power (3:1 VSWR, 85 °C)2
Mounting Temperature (30 seconds)
Storage Temperature
28 dBm
28 dBm
260 °C
−55 to 150 °C
Note:
110
120
130
140
150
160
170
180
1 TBASE = 85 °C, TCH = 225 °C
2 VD=28V, IDQ=450 mA
Channel Temperature (ꢁC)
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions is
not implied.
Recommended Soldering Temperature Profile
- 15 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
QPA1014
2.7ꢀ–ꢀ3.7 GHz 40 Watt GaN Amplifier
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharge Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
Class 0B (≤150V) ANSI/ESD/JEDEC JS-001
Caution!
ESD-Sensitive Device
Class C3
3
ANSI/ESD/JEDEC JS-002
IPC/JEDEC J-STD-020
Solderability
Compatible with the latest version of J-STD-020 Lead free solder, 260 °C.
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical
and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
• Qorvo Green
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
- 16 of 16 -
Data Sheet Rev. D, September 2018
www.qorvo.com
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