QPA1027 [QORVO]
2.8 â 3.5 GHz 60 W GaN Power Amplifier;
| 型号： | QPA1027 |
| 厂家： | 
Qorvo |
| 描述： | 2.8 â 3.5 GHz 60 W GaN Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总23页 (文件大小：790K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA1027
2.8ꢀ– 3.5 GHz 60 W GaN Power Amplifier
®
Product Overview
Qorvo’s QPA1027 is a packaged high-power, S-band
amplifier fabricated on Qorvo’s production 0.25 um GaN on
SiC High Voltage process (QGaN25HV). Covering 2.8ꢀ–ꢀ3.5
GHz, the QPA1027 provides 60 W of saturated output
power and 22 dB of large-signal gain while achieving 55%
power-added efficiency.
The QPA1027 is packaged in a plastic overmold QFN with
a Cu paddle offering easy handling with good thermal
properties. As a result, the QPA1027 has bias flexibility
allowing the user to vary the voltage to achieve optimum
system performance while maintaining high reliability.
Key Features
Frequency Range: 2.8 ꢀ– ꢀ3.5 GHz
PSAT (PIN=26 dBm): 48 dBm
The QPA1027 is matched to 50 ohms with integrated DC
blocking caps on both I/O ports. With the high performance,
good thermal characteristics and ease of handling and
system integration, the QPA1027 is ideal for radar and
satellite communication systems.
PAE (PIN=26 dBm): 55 %
Small Signal Gain: > 31 dB
Bias: Pulsed VD = 50 V, IDQ = 300 mA, VG = −2.7 V typ.
Package Dimensions: 6.0 x 6.0 x 0.85 mm
Lead-free and RoHS compliant.
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
S-Band Radar
VD1
VG
VD2
Satellite Communication
RFIN
RFOUT
Ordering Information
Part No.
QPA1027
Description
S-Band 60 W GaN Power Amplifier
QPA1027S2
QPA1027TR7
Samples (2 pcs. pack)
250 pieces on a 7” reel (standard)
QPA1027EVB01 Evaluation Board for QPA1027
VG
Data Sheet Rev. B, May 2021
1 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Min Typ
Max Units
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
+55 V
Pulse (not recommended CW)
Drain Voltage (VD), Pulsed
50
50
V
Gate Voltage Range (VG)
−6 to 0 V
Drain Current, Quiescent (IDQ
Drain Current, RF (ID_Drive
Gate Voltage Typ. Range (VG)
)
300
mA
mA
V
Drain Current, average (ID1, ID2
)
0.192 A, 2.3 A
See chart
)
See charts page 3 - 7
−2 to -3.4
Gate Current (IG)
Power Dissipation (PDISS),
Pulse, PW = 100 uS, DC = 10%, 85°C
Input Power (PIN),
Pulse, 50 Ω, VD = 50 V, IDQ = 300 mA,
PW = 100 us, DC = 10%, 85°C
Input Power (PIN),
Pulse, 3:1 VSWR, VD = 50 V , IDQ = 300 mA,
PW = 100 us, DC = 10%, 85°C
80 W
Gate Current, RF (IG_Drive
Pulse Width/Duty Cycle
)
See charts page 5 - 7
mA
100/10% 2000/20% us/%
32 dBm
Operating Temp. Range TBASE
(TBASE is backside of
QPA1027)
−40
+25
+85
°C
29 dBm
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Channel Temperature (TCH
)
275 °C
260 °C
Mounting Temperature (30 seconds)
Storage Temperature
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Gate Current Maximum vs. TCH vs. Stage
120
Total
Stage 2
Stage 1
110
100
90
80
70
60
50
40
30
20
10
0
125 135 145 155 165 175 185 195 205 215 225
Channel Temperature (0C)
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ
Max
Units
GHz
dBm
%
Operational Frequency Range
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
PSAT Temperature Coefficient
S21 Temperature Coefficient
Notes:
2.8
3.5
PIN = +26 dBm
PIN = +26 dBm
48
55
31
dB
15
dB
7
dB
TDIFF = −40°C to +85°C; PIN = +26 dBm
TDIFF = −40°C to +85°C
−0.002
−0.04
dBm/°C
dB/°C
1. Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, VG = -2.7V +/- typical, PW = 100 us, DC = 10%
TBASEꢁ=ꢁ+25ꢁ°C, Z0ꢁ=ꢁ50ꢁΩ
2. TBASE is back side of QPA1027
Data Sheet Rev. B, May 2021
2 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. Freq. vs. Input Power
Output Power vs. Freq. vs. Temp.
50
49
48
47
46
45
44
43
50
49
48
47
46
45
44
43
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Input Power
Power Added Eff. vs. Freq. vs. Temp.
70
65
60
55
50
45
40
35
30
70
65
60
55
50
45
40
35
30
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. Input Power
Drain Current vs. Freq. vs. Temp.
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. B, May 2021
3 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. Freq. vs. VD
Output Power vs. Freq. vs. IDQ
50
49
48
47
46
45
44
43
50
49
48
47
46
45
44
43
40 V
45 V
50 V
150 mA
300 mA
600 mA
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Power Added Eff. vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. IDQ
70
65
60
55
50
45
40
35
30
70
65
60
55
50
45
40
35
30
40 V
45 V
50 V
150 mA
300 mA
600 mA
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. VD
Drain Current vs. Freq. vs. IDQ
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
40 V
45 V
50 V
150 mA
300 mA
600 mA
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. B, May 2021
4 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
50
48
46
44
42
40
38
36
34
32
30
70
60
50
40
30
20
10
0
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Large Signal Gain vs. PIN vs. Freq.
45
40
35
30
25
20
15
2.7 GHz
3.1 GHz
3.5 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
3000
2500
2000
1500
1000
500
70
60
50
40
30
20
10
0
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
0
-10
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021
5 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26 dBm,
Frequency = 3.1 GHz, TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. PIN vs. Temp.
Power Added Eff. vs. PIN vs. Temp.
50
48
46
44
42
40
38
36
34
32
30
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Large Signal Gain vs. PIN vs. Temp.
45
40
35
30
25
20
15
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Temp.
Gate Current vs. PIN vs. Temp.
3000
2500
2000
1500
1000
500
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
-10
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021
6 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26 dBm,
Frequency = 3.1 GHz, TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Power Added Eff. vs. PIN vs. IDQ
Output Power vs. PIN vs. IDQ
50
48
46
44
42
40
38
36
34
32
30
70
60
50
40
30
20
10
0
150 mA
300 mA
600 mA
150 mA
300 mA
600 mA
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Large Signal Gain vs. PIN vs. IDQ
45
40
35
30
25
20
15
150 mA
300 mA
600 mA
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Gate Current. vs. PIN vs. IDQ
Drain Current vs. PIN vs. IDQ
70
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
150 mA
300 mA
600 mA
150 mA
300 mA
600 mA
0
-10
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021
7 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 700 us, DC = 20%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. Freq. vs. Input Power
Output Power vs. Freq. vs. Temp.
50
49
48
47
46
45
44
43
50
49
48
47
46
45
44
43
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Input Power
Power Added Eff. vs. Freq. vs. Temp.
70
65
60
55
50
45
40
35
30
70
65
60
55
50
45
40
35
30
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. Input Power
Drain Current vs. Freq. vs. Temp.
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. B, May 2021
8 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 700 us, DC = 20%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. Freq. vs. VD
Output Power vs. Freq. vs. IDQ
50
49
48
47
46
45
44
43
50
49
48
47
46
45
44
43
40 V
45 V
50 V
150 mA
300 mA
600 mA
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Power Added Eff. vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. IDQ
70
65
60
55
50
45
40
35
30
70
65
60
55
50
45
40
35
30
40 V
45 V
50 V
150 mA
300 mA
600 mA
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. VD
Drain Current vs. Freq. vs. IDQ
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
40 V
45 V
50 V
150 mA
300 mA
600 mA
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. B, May 2021
9 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 700 us, DC = 20%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
50
48
46
44
42
40
38
36
34
32
30
70
60
50
40
30
20
10
0
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Large Signal Gain vs. PIN vs. Freq.
45
40
35
30
25
20
15
2.7 GHz
3.1 GHz
3.5 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
3000
2500
2000
1500
1000
500
70
60
50
40
30
20
10
0
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
0
-10
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021
10 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 700 us, DC = 20%, CW RFIN = 26 dBm,
Frequency = 3.1 GHz, TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Output Power vs. PIN vs. Temp.
Power Added Eff. vs. PIN vs. Temp.
50
48
46
44
42
40
38
36
34
32
30
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Large Signal Gain vs. PIN vs. Temp.
45
40
35
30
25
20
15
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Temp.
Gate Current vs. PIN vs. Temp.
3000
2500
2000
1500
1000
500
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
-10
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021
11 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 700 us, DC = 20%, CW RFIN = 26 dBm,
Frequency = 3.1 GHz, TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Power Added Eff. vs. PIN vs. IDQ
Output Power vs. PIN vs. IDQ
50
48
46
44
42
40
38
36
34
32
30
70
60
50
40
30
20
10
0
150 mA
300 mA
600 mA
150 mA
300 mA
600 mA
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Large Signal Gain vs. PIN vs. IDQ
45
40
35
30
25
20
15
150 mA
300 mA
600 mA
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Gate Current. vs. PIN vs. IDQ
Drain Current vs. PIN vs. IDQ
70
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
150 mA
300 mA
600 mA
150 mA
300 mA
600 mA
0
-10
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021
12 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, CW RFIN = 26dBm, TBASE = +25ꢁ°C (TBASE is backside of
QPA1027)
Power Added Eff. vs. Freq. vs. Pulse
Output Power vs. Freq. vs. Pulse
50
49
48
47
46
45
44
43
70
65
60
55
50
45
40
35
30
PW 100us_DC 10%
PW 700us_DC 20%
PW 1000us_DC 20%
PW 2000us_DC 20%
PW 100us_DC 10%
PW 700us_DC 20%
PW 1000us_DC 20%
PW 2000us_DC 20%
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Large Signal Gain vs. Freq. vs. Pulse
25
25
24
24
23
23
22
22
21
21
20
PW 100us_DC 10%
PW 700us_DC 20%
PW 1000us_DC 20%
PW 2000us_DC 20%
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. Pulse
Gate Current vs. Freq. vs. Pulse
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
70
60
50
40
30
20
10
0
PW 100us_DC 10%
PW 700us_DC 20%
PW 1000us_DC 20%
PW 2000us_DC 20%
PW 100us_DC 10%
PW 700us_DC 20%
PW 1000us_DC 20%
PW 2000us_DC 20%
-10
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. B, May 2021
13 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26dBm,
TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
2nd Harmonic vs. Frequency vs. Temp.
3rd Harmonic vs. Frequency vs. Temp.
0
-5
-20
-25
-30
-35
-40
-45
-50
-55
-60
-10
-15
-20
-25
-30
-35
-40
-40 C
+25 C
3.1
+85 C
3.3
-40 C
+25 C
3.1
+85 C
3.3
2.7
2.8
2.9
3
3.2
3.4
3.5
2.7
2.8
2.9
3
3.2
3.4
3.5
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
2nd Harmonic vs. POUT vs. Frequency
3rd Harmonic vs. POUT vs. Frequency
0
-5
-20
-25
-30
-35
-40
-45
-50
-55
-60
2.7 GHz
3.3 GHz
2.9 GHz
3.5 GHz
3.1 GHz
2.7 GHz
3.3 GHz
2.9 GHz
3.5 GHz
3.1 GHz
-10
-15
-20
-25
-30
-35
-40
28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
2nd Harmonic vs. POUT vs. IDQ
3rd Harmonic vs. POUT vs. IDQ
0
-5
-20
-25
-30
-35
-40
-45
-50
-55
-60
150 mA
300 mA
600 mA
-10
-15
-20
-25
-30
-35
-40
150 mA
300 mA
600 mA
28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
Data Sheet Rev. B, May 2021
14 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW VD = 50 V, IDQ = 300 mA, CW RFIN, TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Gain vs. Frequency vs. Temp.
Gain vs. Frequency vs. Temp.
45
40
35
30
25
20
15
45
40
35
30
25
20
15
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2
2.5
3
3.5
4
4.5
4.5
4.5
Frequency (GHz)
Input RL vs. Frequency vs. Temp.
Input RL vs. Frequency vs. Temp.
0
0
-3
-6
-3
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2
2.5
3
3.5
4
Frequency (GHz)
Output RL vs. Frequency vs. Temp.
Output RL vs. Frequency vs. Temp.
0
-3
0
-3
-6
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2
2.5
3
3.5
4
Frequency (GHz)
Data Sheet Rev. B, May 2021
15 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW VD = 50 V, IDQ = 300 mA, CW RFIN, TBASE = +25ꢁ°C (TBASE is backside of QPA1027)
Gain vs. Frequency vs. IDQ
Gain vs. Frequency vs. VD
45
40
35
30
25
20
15
45
40
35
30
25
20
15
40 V
3
45 V
50 V
150 mA
300 mA
2.6 2.7 2.8 2.9
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Frequency (GHz)
Input RL vs. Frequency vs. IDQ
Input RL vs. Frequency vs. VD
0
0
-3
-6
-3
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
40 V
3
45 V
50 V
150 mA
300 mA
2.6 2.7 2.8 2.9
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Frequency (GHz)
Output RL vs. Frequency vs. IDQ
Output RL vs. Frequency vs. VD
0
-3
0
-3
-6
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
40 V
3
45 V
50 V
150 mA
300 mA
2.6 2.7 2.8 2.9
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021
16 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
TBASE = 85 °C, Pulsed PW = 100 us, DC = 10%,
VD = 50 V, IDQ = 300 mA, Freq = 3.5 GHz, ID_Drive, peak ≈ 2.45
A, PIN = 26 dBm, POUT ≈ 48 dBm,
Thermal Resistance (θJC) (1)
0.91
ºC/W
Channel Temperature, TCH (Under RF) (2)
Thermal Resistance (θJC) (1)
138
1.55
172
1.71
177
1.86
185
°C
ºC/W
°C
PDISS = 59 W
TBASE = 85 °C, Pulsed PW = 700 us, DC = 20%,
VD = 50 V, IDQ = 300 mA, Freq = 3.5 GHz, ID_Drive, peak ≈ 2.35
A, PIN = 26 dBm, POUT ≈ 47.9 dBm,
PDISS = 56 W
Channel Temperature, TCH (Under RF) (2)
Thermal Resistance (θJC) (1)
TBASE = 85 °C, Pulsed PW = 1000 us, DC = 20%,
VD = 50 V, IDQ = 300 mA, Freq = 3.5 GHz, ID_Drive, peak ≈ 2.3
A, PIN = 26 dBm, POUT ≈ 47.9 dBm,
PDISS = 54 W
ºC/W
°C
Channel Temperature, TCH (Under RF) (2)
Thermal Resistance (θJC) (1)
TBASE = 85 °C, Pulsed PW = 2000 us, DC = 20%,
VD = 50 V, IDQ = 300 mA, Freq = 3.5 GHz, ID_Drive, peak ≈ 2.3
A, PIN = 26 dBm, POUT ≈ 47.9 dBm,
PDISS = 54 W
ºC/W
°C
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of QPA1027 TBASE = 85 °C
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates,” located here https://www.qorvo.com/products/d/da006480
Dissipated Power vs. Freq. vs. Input Power
Dissipated Power vs. Freq. vs. Pulse
65
60
55
50
45
40
35
30
65
60
55
50
45
40
35
30
21 dBm
23 dBm
25 dBm
22 dBm
24 dBm
26 dBm
PW 100us_DC 10%
PW 1000us_DC 20%
PW 700us_DC 20%
PW 2000us_DC 20%
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, PW = 100 us, DC = 10%, CW RFIN = 26dBm, TBASE = +85ꢁ°C
Data Sheet Rev. B, May 2021
17 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Applications Circuit (Pulse)
Note:
1. Vg can be applied to either side; external bypassing required on both sides
2. Remove R2 to bias Vd’s independently
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit (CW) to 3000 mA, IG limit to 200 mA
1. Turn off RF signal
2. Set VG to −5.0 V
2. Reduce VG to −5.0 V. Ensure IDQ ~ 0mA
4. Set VD to 0 V
4. Set VD +50 V
5. Adjust VG more positive until IDQ = 300 mA
(VG −2.7 V +/- Typical)
5. Turn off VD supply
Data Sheet Rev. B, May 2021
18 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
ApplicationEvaluation Board (Pulse)
PCB Mounting
Notes:
1. RF PCB is Rogers 4003C; dielectric is 8 mil thick, copper cladding is ½ oz. copper both sides, plated to 1 oz
2. Copper Slug placed under the DUT to improve thermal and electrical performance
Bill of Materials
Reference Des.
C1, C5
Value
0.1 uF
1000 pF
10 uF
10 Ω
0 Ω
Description
Manuf.
Various
Various
Various
Various
Various
Various
Part Number
CAP, 0.1uF, ±10%, 50V, X7R, 0603
CAP, 1000pF, ±10%, 100V, X7R, 0402
CAP, 10uF, ±20%, 50V, X5R, 1206
RES, 10 OHM, 5%, 0.1W, 0402
RES, 0 OHM, 0.1W, 0603
C2, C4, C6, C7
C3, C8
R1, R4
R2
R3, R5
0 Ω
RES, 0 OHM, JMPR, 0402
H1, H2
-
Header, connector 2x6, SMD
Connector, Female, End Launch, 2.9mm
Screw, cap, socket head, 2-56x1/8”
J1, J2
-
Southwest Microwave 1092-01A-5
S1 – S8
Rogers 4003C, 8 mil dielectric, 1 oz. copper
(gold plated), 2 layers
PCB
-
Rogers Corp.
Custom
Custom
Carrier
Solder
Epoxy
-
-
-
T-Carrier, Copper C110, 1.248 x 2.246 x 0.275”
Paste, solder, syntech, Sn62/Pb36/Ag2
Preform Epoxy, 0.986 x 1.996 x 0.003T
Data Sheet Rev. B, May 2021
19 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Mechanical Information
22 23 24 25 26 27 28
21
20
19
18
17
16
15
1
2
3
4
5
6
7
29
14 13 12 11 10
9
8
Notes: unless otherwise specified;
1. Dimensions: millimeters (mm)
2. Package leads are gold (Au) plated; Part is mold encapsulated
3. Marking: YY is calendar year; WW is assembly week; MXXX is batch ID
Pin Description
Pin Number
1-3, 5-9, 11-17, 19-21, 24-25
27
Symbol
N/C
Description
No internal connection. Connect pads to PCB ground
4
RF Input
RF Input. Matched to 50ꢀΩ; DC blocked; DC shorted to ground
Gate voltage. External bypassing required; refer to page 17 for
recommendation
10, 26
18
VG
RF Output
VD2
RF Output. Matched to 50ꢀΩ; DC blocked
Drain voltage for stage 2. External bypassing required; refer to page 17 for
recommendation
22, 23
Drain voltage for stage 1. External bypassing required; refer to page 17 for
recommendation
28
29
VD1
Center Pad
Ground connection
Data Sheet Rev. B, May 2021
20 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Tape and reel Information
Standard T/R size = 250 pieces on a 7” reel
Dimensions: millimeters (mm)
Tolerances unless otherwise noted: .X = ± .2; .XX = ± .10
Data Sheet Rev. B, May 2021
21 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Solderability
Compatible with the latest version of J-STD-020, Lead-free solder, 260ꢀ°C
Do not expose the package lid to temperatures > 280ꢀ°C
Recommended Soldering Temperature Profile
Data Sheet Rev. B, May 2021
22 of 23
www.qorvo.com
QPA1027
®
2.8 ꢀ–ꢀ3.5 GHz 60 W GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1A
C3
3
ANSI/ESD/JEDEC JS-001
Caution!
ESD-Sensitive Device
ANSI/ESD/JEDEC JS-002
IPC/JEDEC J-STD-020
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. B, May 2021
23 of 23
www.qorvo.com
相关型号：
©2020 ICPDF网 联系我们和版权申明