QPA2213 [QORVO]
2 â 20 GHz 2 Watt GaN Amplifier;
| 型号： | QPA2213 |
| 厂家： | 
Qorvo |
| 描述： | 2 â 20 GHz 2 Watt GaN Amplifier |
| 文件： | 总28页 (文件大小：995K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA2213
2ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
®
Product Overview
Qorvo’s QPA2213 is a packaged wide band driver
amplifier fabricated on Qorvo’s production 0.15 um GaN
on SiC process (QGaN15). Covering 2.0ꢀ–ꢀ20.0 GHz, the
QPA2213 provides > 2 W of saturated output power and
16 dB of large-signal gain while achieving > 23% power-
added efficiency.
The QPA2213 is packaged in a 4.5 x 4.5 mm laminate
package. It can support a variety of operating conditions to
best support system requirements. With good thermal
properties, it can support a range of bias voltages.
Key Features
The QPA2213 has DC blocking capacitors on both RF
ports, which are matched to 50 ohms. The QPA2213 is
ideal for both commercial and military wide band or narrow
band systems.
Frequency Range: 2ꢀ–ꢀ20 GHz
PSAT (PIN=18 dBm): 34 dBm
PAE (PIN=18 dBm): 23 %
Power Gain (PIN=18 dBm): 16 dB
Small Signal Gain: 25 dB
Lead-free and RoHS compliant.
Noise Figure: 4.0 dB
Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm
Package Dimensions: 4.50 x 4.50 x 1.74 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
RF OUT
RF IN
HPA Driver Amplifier
Radar Systems
Ordering Information
Part No.
Description
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
(10 Pcs.)
QPA2213
Top View
QPA2213S2
Samples (2 pcs.)
QPA2213EVBV01
Evaluation Board for QPA2213
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
1 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Valueꢀ/ꢀRange
Parameter
Valueꢀ/ꢀRange
Drain Voltage (VD)
29.5 V
-4 V to 0 V
890 mA
Drain Voltage (VD)
18 V
Gate Voltage Range (VG)
Drain Current (ID)
Drain Current (IDQ
)
330 mA
Operating Temperature
−40 to +85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Gate Current (IG)
See plot pg. 23
13.7 W
Power Dissipation (PDISS), 85 °C
Input Power (PIN), 50 Ω,
VD=18 V, IDQ=330 mA, 85 °C
27 dBm
27 dBm
Input Power (PIN), 3:1 VSWR,
VD=18 V, IDQ=330 mA, 85 °C
Soldering Temperature
Storage Temperature
260 °C
-55 to +125 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
2 of 28
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Electrical Specifications
Parameter
Min
Typ
Max
Units
Operational Frequency
2
20
GHz
Output Power (PIN=18 dBm)
Power Added Efficiency (PIN=18 dBm)
Small Signal Gain
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
34.2
35.5
34.2
34.0
33.3
dBm
dBm
dBm
dBm
dBm
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
36.9
22.5
23.6
21.5
20.4
%
%
%
%
%
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
25.3
26.0
24.8
22.9
21.4
dB
dB
dB
dB
dB
Input Return Loss
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
18
16
12
14
29
dB
dB
dB
dB
dB
Output Return Loss
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
7
dB
dB
dB
dB
dB
15
19
19
26
Noise Figure
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
7.6
4.4
3.2
4.0
5.3
dB
dB
dB
dB
dB
IMD3 (POUT/Tone=27 dBm)
(100 MHz tone spacing)
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
-23.0
-21.7
-21.9
-21.4
-19.8
dBc
dBc
dBc
dBc
dBc
POUT Temp. Coeff. (85ꢀ°C toꢀ25 °C, PIN = 18 dBm))
-0.006
-0.043
dB/°C
dB/°C
Sm. Sig. Gain Temp. Coefficient (85 °C to ꢀ−40 °C)
Test conditions, unless otherwise noted: T = 25 °C, VD = 18 V, IDQ = 330 mA
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
3 of 28
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
12 V
20 V
14 V
22 V
16 V
24 V
18 V
-40 C
+25 C
+85 C
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
12 V
20 V
14 V
22 V
16 V
24 V
18 V
-40 C
+25 C
+85 C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
12 V
14 V
16 V
18 V
-40 C
+25 C
+85 C
20 V
22 V
24 V
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
4 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Gain vs. Freq. vs. IDQ
Input RL vs. Freq. vs. IDQ
40
35
30
25
20
15
10
5
0
-5
220 mA
330 mA
440 mA
-10
-15
-20
-25
-30
220 mA
8
330 mA
440 mA
0
0
2
4
6
10 12 14 16 18 20 22 24
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
-5
220 mA
330 mA
440 mA
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
5 of 28
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀNoise Figure
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Noise Figure vs. Freq. vs. Vdrain
Noise Figure vs. Freq. vs. Temp.
14
12
10
8
14
12
10
8
12 V
20 V
14 V
22 V
16 V
24 V
18 V
-40 C
+25 C
+85 C
6
6
4
4
2
2
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Noise Figure vs. Freq. vs. IDQ
14
12
10
8
220 mA
330 mA
440 mA
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
6 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, Pin = 18 dBm
PAE vs. Freq. vs. Temp.
Output Power vs. Freq. vs. Temp.
38
37
36
35
34
33
32
31
30
29
28
40
35
30
25
20
15
10
5
-40 C
8
+25 C
12
+85 C
14 16
-40 C
8
+25 C
12
+85 C
14 16
0
2
2
2
4
4
4
6
10
18
20
20
20
2
2
2
4
4
4
6
10
18
18
18
20
20
20
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. Vdrain
Output Power vs. Freq. vs. Vdrain
38
37
36
35
34
33
32
31
30
29
28
40
35
30
25
20
15
10
5
12 V
20 V
14 V
22 V
16 V
24 V
18 V
16
12 V
20 V
14 V
22 V
16 V
24 V
18 V
16
0
6
8
10
12
14
18
6
8
10
12
14
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. IDQ
Output Power vs. Freq. vs. IDQ
38
37
36
35
34
33
32
31
30
29
28
40
35
30
25
20
15
10
5
220 mA
8
330 mA
12
440 mA
14 16
220 mA
8
330 mA
12
440 mA
14 16
0
6
10
18
6
10
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
7 of 28
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, Pin = 18 dBm
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
900
800
700
600
500
400
300
200
100
0
5
4
3
2
1
0
-1
-2
-3
-40 C
8
+25 C
12
+85 C
14 16
-40 C
8
+25 C
12
+85 C
14 16
2
2
2
4
6
10
18
20
20
20
2
2
2
4
4
4
6
10
18
20
20
20
Frequency (GHz)
Frequency (GHz)
Gate Current vs. Freq. vs. Vdrain
Drain Current vs. Freq. vs. Vdrain
5
4
900
800
700
600
500
400
300
200
100
0
3
2
1
0
-1
-2
-3
12 V
20 V
14 V
22 V
16 V
24 V
18 V
16
12 V
20 V
14 V
22 V
16 V
24 V
18 V
16
6
8
10
12
14
18
4
6
8
10
12
14
18
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. IDQ
Gate Current vs. Freq. vs. IDQ
900
800
700
600
500
400
300
200
100
0
5
4
3
2
1
0
-1
-2
-3
220 mA
8
330 mA
10 12
440 mA
14 16
220 mA
8
330 mA
12
440 mA
14 16
4
6
18
6
10
18
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
8 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Output Power vs. PIN vs. Freq.
PAE vs. PIN vs. Freq.
36
34
32
30
28
26
24
22
20
40
35
30
25
20
15
10
5
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
15 GHz
20 GHz
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
900
800
700
600
500
400
300
200
100
0
5
4
3
2
1
0
-1
-2
2 GHz
6 GHz
10 GHz
15 GHz
20 GHz
2 GHz
4
6 GHz
8
10 GHz
15 GHz
20 GHz
0
2
4
6
8
10 12 14 16 18 20 22
0
2
6
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
9 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Output Power vs. Input Power vs. Temp.
2 GHz
Output Power vs. Input Power vs. Temp.
6 GHz
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
10 GHz
Output Power vs. Input Power vs. Temp.
15 GHz
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
20 GHz
36
34
32
30
28
26
24
22
20
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
10 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
2 GHz
6 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
15 GHz
10 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
40
20 GHz
35
30
25
20
15
10
5
-40 C
+25 C
+85 C
0
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
11 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Drain Current vs. Input Power vs. Temp.
2 GHz
Drain Current vs. Input Power vs. Temp.
6 GHz
900
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
10 GHz
Drain Current vs. Input Power vs. Temp.
15 GHz
900
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
20 GHz
900
800
700
600
500
400
300
200
100
0
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
12 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Output Power vs. Input Power vs. Vdrain
2 GHz
Output Power vs. Input Power vs. Vdrain
6 GHz
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
12V
18V
24V
12V
18V
24V
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Vdrain
10 GHz
Output Power vs. Input Power vs. Vdrain
15 GHz
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
12V
18V
24V
12V
18V
24V
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Vdrain
20 GHz
36
34
32
30
28
26
24
22
20
12V
18V
24V
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
13 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
PAE vs. Input Power vs. Vdrain
PAE vs. Input Power vs. Vdrain
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
6 GHz
2 GHz
12V
18V
24V
12V
18V
24V
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Vdrain
PAE vs. Input Power vs. Vdrain
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
15 GHz
10 GHz
12V
18V
24V
12V
18V
24V
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Vdrain
40
20 GHz
35
30
25
20
15
10
5
12V
18V
24V
0
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Data Sheet Rev. E, June 5, 2020 | Subject to change without notice
14 of 28
www.qorvo.com
QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Drain Current vs. Input Power vs. Vdrain
2 GHz
Drain Current vs. Input Power vs. Vdrain
6 GHz
900
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
12V
18V
24V
12V
18V
24V
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Vdrain
10 GHz
Drain Current vs. Input Power vs. Vdrain
15 GHz
900
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
12V
18V
24V
12V
18V
24V
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Vdrain
20 GHz
900
800
700
600
500
400
300
200
100
0
12V
18V
24V
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Output Power vs. Input Power vs. IDQ
2 GHz
Output Power vs. Input Power vs. IDQ
6 GHz
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
220mA
330mA
440mA
220mA
330mA
440mA
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
10 GHz
Output Power vs. Input Power vs. IDQ
15 GHz
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
220mA
330mA
440mA
220mA
330mA
440mA
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
20 GHz
36
34
32
30
28
26
24
22
20
220mA
330mA
440mA
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
PAE vs. Input Power vs. IDQ
PAE vs. Input Power vs. IDQ
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
2 GHz
6 GHz
220mA
330mA
440mA
220mA
330mA
440mA
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. IDQ
PAE vs. Input Power vs. IDQ
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
15 GHz
10 GHz
220mA
330mA
440mA
220mA
330mA
440mA
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. IDQ
40
20 GHz
35
30
25
20
15
10
5
220mA
330mA
440mA
0
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C
Drain Current vs. Input Power vs. IDQ
2 GHz
Drain Current vs. Input Power vs. IDQ
6 GHz
900
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
220mA
330mA
440mA
220mA
330mA
440mA
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. IDQ
10 GHz
Drain Current vs. Input Power vs. IDQ
15 GHz
900
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
220mA
330mA
440mA
220mA
330mA
440mA
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. IDQ
20 GHz
900
800
700
600
500
400
300
200
100
0
220mA
330mA
440mA
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, 100 MHz tone spacing
IMD3, IMD5 vs. POUT/Tone vs. Temp.
Fc = 2 GHz
IMD3, IMD5 vs. POUT/Tone vs. Temp.
Fc = 6 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Temp.
Fc = 10 GHz
IMD3, IMD5 vs. POUT/Tone vs. Temp.
Fc = 15 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Temp.
Fc = 20 GHz
0
-10
-20
-30
-40
-50
-60
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, 100 MHz tone spacing
IMD3, IMD5 vs. POUT/Tone vs. Vdrain
Fc = 6 GHz
IMD3, IMD5 vs. POUT/Tone vs. Vdrain
Fc = 2 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IM3 12 V
IM5 12 V
IM3 18 V
IM5 18 V
IM3 24 V
IM5 24 V
IM3 12 V
IM5 12 V
IM3 18 V
IM5 18 V
IM3 24 V
IM5 24 V
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Vdrain
Fc = 10 GHz
IMD3, IMD5 vs. POUT/Tone vs. Vdrain
Fc = 15 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IM3 12 V
IM5 12 V
IM3 18 V
IM5 18 V
IM3 24 V
IM5 24 V
IM3 12 V
IM5 12 V
IM3 18 V
IM5 18 V
IM3 24 V
IM5 24 V
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Vdrain
Fc = 20 GHz
0
-10
-20
-30
-40
-50
-60
IM3 12 V
IM5 12 V
IM3 18 V
IM5 18 V
IM3 24 V
IM5 24 V
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, 100 MHz tone spacing
IMD3, IMD5 vs. POUT/Tone vs. IDQ
IMD3, IMD5 vs. POUT/Tone vs. IDQ
Fc = 6 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
Fc = 2 GHz
IM3 220 mA
IM3 330 mA
IM3 440 mA
IM5 220 mA
IM5 330 mA
IM5 440 mA
IM3 220 mA
IM5 220 mA
IM3 330 mA
IM5 330 mA
IM3 440 mA
IM5 440 mA
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. IDQ
Fc = 10 GHz
IMD3, IMD5 vs. POUT/Tone vs. IDQ
Fc = 15 GHz
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IM3 220 mA
IM3 330 mA
IM3 440 mA
IM5 220 mA
IM5 330 mA
IM5 440 mA
IM3 220 mA
IM3 330 mA
IM3 440 mA
IM5 220 mA
IM5 330 mA
IM5 440 mA
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. IDQ
Fc = 20 GHz
0
-10
-20
-30
-40
-50
-60
IM3 220 mA
IM5 330 mA
IM3 440 mA
IM5 220 mA
IM3 330 mA
IM5 440 mA
20 21 22 23 24 25 26 27 28 29 30 31
Output Power / Tone (dBm)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Performance Plotsꢀ–ꢀHarmonics
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, Pin = 18 dBm
2nd Harmonic vs. POUT vs. Temp.
3rd Harmonic vs. POUT vs. Temp.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-40C
8
+25C
+85C
-40C
8
+25C
+85C
0
0
0
2
2
2
4
6
10 12 14 16 18 20 22
0
0
0
2
2
2
4
6
10 12 14 16 18 20 22
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
2nd Harmonic vs. POUT vs. Vdrain
3rd Harmonic vs. POUT vs. Vdrain
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
12 V
8
18 V
24 V
12 V
8
18 V
24 V
4
6
10 12 14 16 18 20 22
4
6
10 12 14 16 18 20 22
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
2nd Harmonic vs. POUT vs. IDQ
3rd Harmonic vs. POUT vs. IDQ
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
220 mA
330 mA
440 mA
220 mA
330 mA
440 mA
4
6
8
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF) (2)
Test Conditions
Value
4.97
Units
ºC/W
°C
Tbase = 85 °C, VD = 18 V, IDQ = 330 mA, PDISS = 5.94 W,
No RF (quiescent DC operation)
114
Thermal Resistance (θJC) (1)
6.98
153
ºC/W
°C
Tbase = 85 °C, VD = 18 V, IDQ = 330 mA, Freq = 6.5 GHz,
ID_Drive = 680 mA, PIN = 18 dBm, POUT = 34.1 dBm,
PDISS = 9.72 W
Channel Temperature, TCH (Under RF) (2)
Thermal Resistance (θJC) (1)
7.14
176
ºC/W
°C
Tbase = 85 °C, VD = 22 V, IDQ = 330 mA, Freq = 6.5 GHz,
ID_Drive = 701 A, PIN = 18 dBm, POUT = 34.4 dBm,
PDISS = 12.71 W
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of package, Tbase (85 °C)
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Dissipated Power and Maximum Gate Current
Dissipated Power vs. Freq. vs. Vdrain
QPA2213 Ig_max vs. TCH
16
14
12
10
8
120
100
80
60
40
20
0
Total Ig
6
4
2
18V 85C
20V 85C
10
22V 85C
14
24V 85C
18 20
0
110
120
130
140
150
160
170
180
2
4
6
8
12
16
Channel Temperature (ꢁC)
Frequency (GHz)
Test conditions, unless otherwise noted: VD = 18 V, IDQ = 330 mA, T=+25ꢁ°C, Pin=18 dBm
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Applications Information
C1
C2
C4
C3
10 uF
0.01 uF
0.01 uF
R4
0 Ohms
10 uF
R3
0 Ohms
R1
5.1 Ohms
R2
0 Ohms
VD
VG
18 17 16
15
1
14
2
13
RF IN
RF OUT
3
4
5
6
12
11
10
9
7
8
Top View
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 900 mA, IG limit to 10 mA
2. Set VG to −4.0 V
1. Turn off RF signal
2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
4. Set VD to 0 V
3. Set VD +18 V
5. Turn off VD supply
4. Adjust VG more positive until IDQ 330 mA
5. Apply RF signal
6. Turn off VG supply
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Evaluation Board (EVB) Layout Assembly
R1
C1
R3
C3
C2
R2
C4
R4
PCB detail under package
PCB is made from Rogers 4003C dielectric, .008 inch thick, 0.5 oz. copper both sides.
Carrier plate has a raised pedestal to contact the center of the package base.
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1,C3
10 uF
CAP, 10 uF, 20%, 50 V, 20%, X5R, 1206
Various
C2, C4
R1
0.01 uF
5.1 Ω
0 Ω
CAP, 0.01 uF, 10%, 50 V, X7R, 0402
RES, 5.1 OHM, 5%, 50 V, 0402
RES, 0 OHM, JMPR, 0402
Various
Various
Various
R2, R3, R4
J1, J2
2.92 mm CONNECTOR, FEMALE, ENDLAUNCH Southwest Microwave 1092-01A-5
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Mechanical Information
15 16 17
18
14
13
12
11
10
9
1
2
3
4
5
6
QPA2213
YYXX
8
7
MXXX
Notes:
1. Material:
Package Base: EHS Laminate
Package Lid: FR4
Backside plating: Gold, 0.10 um (min.)
2. All metalized features are gold plated
3. The part is epoxy sealed
Tolerances:
.XX = ± .25
.XXX = ± .100
.XXXX = ± .0245
Unless otherwise specified, dimensions are in mm
Bond Pad Description
Pad No.
Symbol
Description
1,3,5,7,8,10,12,14
GND
Ground. Connect pads to PCB ground.
2
RF IN
N/C
RF input. 50 Ohms. DC blocked.
4,6,9,11,15
13
No connection. May be grounded to PCB if desired.
RF output. 50 Ohms. DC blocked.
RF OUT
16,17
18
VD
VG
Drain voltage. External bypassing required; refer to page for recommendation.
Gate voltage. External bypassing required; refer to page for recommendation.
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Assembly Notes
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
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QPA2213
®
2 ꢀ–ꢀ20 GHz 2 Watt GaN Amplifier
Handling Precautions
Parameter
Rating
Standard
Caution!
ESDꢀ–ꢀHuman Body Model (HBM)
1A
ESDAꢁ/ꢁJEDEC JS-001-2012
ESDAꢁ/ꢁJEDEC JS-002-2014
ESDꢀ–ꢀCharge Device Model (CDM) C2A
ESD-Sensitive Device
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
3
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
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