QPA2225TR7 [QORVO]
28 â 38 GHz 0.4 Watt GaN Driver Amplifier;型号: | QPA2225TR7 |
厂家: | Qorvo |
描述: | 28 â 38 GHz 0.4 Watt GaN Driver Amplifier |
文件: | 总22页 (文件大小:855K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
QPA2225
28 – 38 GHz 0.4 Watt GaN Driver Amplifier
®
Product Overview
Qorvo’s QPA2225 is a wide band driver amplifier fabricated
on Qorvo’s production 0.15 um GaN on SiC process
(QGaN15). Covering 28ꢀ–ꢀ38 GHz, the QPA2225 provides
> 0.4 W of saturated output power with >22 dB of small-
signal gain.
The QPA2225 dimensions are 4 x 3 x 2 mm. It can support
a variety of operating conditions to best support system
requirements. With good thermal properties, it can support
a range of bias voltages.
The QPA2225 has DC blocking capacitors on both RF
ports, which are matched to 50 ohms.
The QPA2225 is ideal for supporting communications and
radar applications in both commercial and military markets.
Functional Block Diagram
Key Features
• Frequency Range: 28 ꢀ– 40 GHz
• Power (Pin = 14 dBm): 26 dBm
• Large Signal Gain (Pin = 14 dBm): 12 dB
• Small Signal Gain: 22 dB
• IM3 (Pout / Tone = 20 dBm): - 20 dBc
• Bias: VD = +20 V, IDQ = 64 mA, VG = - 2.5 V typ.
• Package Dimensions: 4 x 3 x 2 mm
Performance is typical across frequency. Refer to
electrical specification table and data plots for more
details.
Ordering Information
Applications
Part No.
Description
• Wide Band Communications
• Radar
QPA2225
QPA2225 Waffle Pack, Qty 50
Tape & Reel, 7" reel, Qty 250
Evaluation Board, Qty 1
QPA2225TR7
QPA2225EVB
• Satellite Communications
• Electronic Warfare
Data Sheet Rev. A, Dec. 2021
|
Subject to change without notice
1 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Absolute Maximum Ratings
Parameter
Min Value
Max Value
Units
V
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
-
-5
-
29.5
0
V
mA
mA
dBm
516
24
-
Input Power (Pin), CW, 85 °C
-
18
dBm
ºC
ºC
Input Power (Pin), CW, 3:1 VSWR, 85 °C
Mounting Temperature
Storage Temperature
-
-
18
260
150
-55
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may
reduce device reliability.
Recommended Operating Conditions
Parameter
Min
Typ.
Max
Units
Drain Voltage (VD)
20
22
V
Drain Current, (IDQ)
64
mA
V
Gate Voltage (VG, typical, can be adjusted)
Ambient Temperature Range
−2.5
−40
+85
ºC
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating
condition
Electrical Specifications
Parameter
Conditionsꢀ(1)
Min
Typ.
Max
Units
GHz
dB
Operational Frequency Range
Small Signal Gain
28
38
22
8
Input Return Loss
dB
Output Return Loss
8
dB
Output Power at Saturation
Large Signal Gain
PIN = 14 dBm, CW
26
12
10
-20
dBm
dB
PIN = 14 dBm, CW
Power Added Efficiency
3RD Intermodulation Products
Gate Leakage
PIN = 14 dBm, CW
%
POUT/Tone = 20 dBm; Δf = 100 MHz
VD = 10V, VG = - 4.0 V
dBc
mA
-0.7
Gain Temperature Coefficient
-0.08
dB/ºC
1.
Nominal bias, data de-embedded of fixture losses.
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
2 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, +25 ºC
Gain vs. Frequency vs. Temp.
Input RL vs. Frequency vs. Temp.
0
-5
36
32
28
24
20
16
12
8
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-10
-15
-20
-25
-30
4
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Frequency (GHz)
Frequency (GHz)
Isolation vs. Frequency vs. Temp.
Output RL vs. Frequency vs. Temp.
0
-10
-20
-30
-40
-50
-60
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-5
-10
-15
-20
-25
-30
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, +25 ºC
Gain vs. Frequency vs. VD
Gain vs. Frequency vs. Ids
36
32
28
24
20
16
12
8
36
32
28
24
20
16
12
8
4
4
16 V
30
18 V
32
20 V
34
24 V
36
44 mA
64 mA
84 mA
36
0
0
26
28
38
40
40
40
26
28
30
32
34
38
40
40
40
Frequency (GHz)
Frequency (GHz)
Input RL vs. Frequency vs. Ids
Input RL vs. Frequency vs. VD
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
16 V
30
18 V
32
20 V
34
24 V
36
44 mA
64 mA
84 mA
36
26
28
38
26
28
30
32
34
38
Frequency (GHz)
Frequency (GHz)
Output RL vs. Frequency vs Ids
Output RL vs. Frequency vs. VD
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
44 mA
30
64 mA
34
84 mA
36
16 V
30
18 V
32
20 V
34
24 V
36
26
28
38
26
28
32
38
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
4 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, Pin = +14dBm, +25 ºC
Power vs Temperature
PAE vs Temperature
35
30
25
20
15
20
15
10
5
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
PAE vs VD
Power vs VD
35
30
25
20
15
20
15
10
5
12 V
16 V
20 V
24 V
12 V
16 V
20 V
24 V
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Power vs Ids
PAE vs Ids
35
30
25
20
15
20
15
10
5
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
5 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, Pin = +14dBm, +25 ºC
Power Gain vs Temperature
Drain Current vs Temperature
20
15
10
5
250
200
150
100
50
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
0
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Power Gain vs VD
Drain Current vs VD
20
15
10
5
250
200
150
100
50
12 V
16 V
20 V
24 V
12 V
16 V
20 V
24 V
0
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Power Gain vs Ids
Drain Current vs Ids
20
15
10
5
250
200
150
100
50
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
0
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
6 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, +25 ºC
Power vs Pin vs Temp
Power vs Pin
30
30
Freq = 36 GHz
25
25
20
15
10
5
20
15
10
5
- 40 C
+ 25 C
+ 85 C
28 GHz
-5
32 GHz
36 GHz
10
38 GHz
15
0
0
-10
-10
-10
-5
-5
-5
0
5
10
15
20
-10
-10
-10
0
5
20
20
20
Pin (dBm)
Pin (dBm)
Power Gain vs Pin vs Temp
Power Gain vs Pin
30
25
20
15
10
5
30
25
20
15
10
5
Freq = 36 GHz
- 40 C
+ 25 C
+ 85 C
28 GHz
32 GHz
36 GHz
10
38 GHz
15
0
0
-5
0
5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
PAE vs Pin vs Temp
PAE vs Pin
20
18
16
14
12
10
8
20
18
16
14
12
10
8
- 40 C
+ 25 C
+ 85 C
28 GHz
32 GHz
36 GHz
38 GHz
6
6
4
4
2
2
Freq = 36 GHz
0
0
-5
0
5
10
15
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, +25 ºC
Power vs Pin vs Ids
Power vs Pin vs VD
30
30
Freq = 36 GHz
Freq = 36 GHz
25
25
20
15
10
5
20
15
10
5
12 V
16 V
20 V
24 V
44 mA
64 mA
84 mA
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Power Gain vs Pin vs VD
Power Gain vs Pin vs Ids
30
25
20
15
10
5
30
25
20
15
10
5
Freq = 36 GHz
Freq = 36 GHz
44 mA
64 mA
84 mA
15
12 V
16 V
20 V
10
24 V
15
0
0
-10
-5
0
5
20
-10
-5
0
5
10
20
Pin (dBm)
Pin (dBm)
PAE vs Pin v VD
PAE vs Pin vs Ids
20
20
44 mA
64 mA
84 mA
18
16
14
12
10
8
12 V
16 V
20 V
24 V
18
16
14
12
10
8
6
6
4
4
2
2
Freq = 36 GHz
Freq = 36 GHz
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
8 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, Pin = +14dBm, +25 ºC
Drain Current vs Pin
Drain Current vs Pin vs Temp
250
200
150
100
50
250
200
150
100
50
- 40 C
+ 25 C
+ 85 C
28 GHz
32 GHz
36 GHz
38 GHz
Freq = 36 GHz
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Drain Current vs Pin vs VD
Drain Current vs Pin vs Ids
250
250
200
150
100
50
12 V
16 V
20 V
24 V
44 mA
64 mA
84 mA
200
150
100
50
Freq = 36 GHz
Freq = 36 GHz
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Gate Current vs Temperature
1.0
- 40 C
+ 25 C
+ 85 C
0.5
0.0
-0.5
-1.0
26
28
30
32
34
36
38
40
Freq (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
9 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, Pin= +14dBm, +25 ºC
Power vs Temperature
PAE vs Temperature
35
30
25
20
15
20
15
10
5
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
PAE vs VD
Power vs VD
35
30
25
20
15
20
15
10
5
12 V
16 V
20 V
24 V
12 V
16 V
20 V
24 V
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Power vs Ids
PAE vs Ids
35
30
25
20
15
20
15
10
5
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
10 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, Pin = +14dBm, +25 ºC
Power Gaain vs Temperature
Drain Current vs Temperature
20
15
10
5
300
250
200
150
100
50
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
0
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Power Gain vs VD
Drain Current vs VD
300
250
200
150
100
50
20
15
10
5
12 V
16 V
20 V
24 V
12 V
16 V
20 V
24 V
0
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Power Gain vs Ids
Drain Current vs Ids
20
15
10
5
300
250
200
150
100
50
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
0
0
26
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
Freq (GHz)
Freq (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
11 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, Pin = +14dBm, +25 ºC
Power vs Pin vs Temp
Power vs Pin
30
25
20
15
10
5
30
25
20
15
10
5
Freq = 36 GHz
- 40 C
+ 25 C
+ 85 C
28 GHz
-5
32 GHz
36 GHz
10
38 GHz
15
0
0
-10
-5
-5
-5
0
5
10
15
20
-10
0
5
20
Pin (dBm)
Pin (dBm)
PAE vs Pin vs Temp
PAE vs Pin
20
20
- 40 C
+ 25 C
+ 85 C
28 GHz
32 GHz
36 GHz
38 GHz
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
Freq = 36 GHz
0
0
-10
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Power Gain vs Pin vs Temp
Power Gain vs Pin
30
25
20
15
10
5
30
25
20
15
10
5
Freq = 36 GHz
- 40 C
+ 25 C
+ 85 C
28 GHz
32 GHz
36 GHz
10
38 GHz
15
0
0
-10
-5
0
5
20
-10
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
12 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, Pin = +14dBm, +25 ºC
Power vs Pin vs VD
Power vs Pin vs Temp
30
25
20
15
10
5
30
25
20
15
10
5
Freq = 36 GHz
Freq = 36 GHz
12 V
16 V
20 V
24 V
44 mA
64 mA
84 mA
0
0
-10
-5
-5
-5
0
5
10
15
20
-10
-5
-5
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
PAE vs Pin vs VD
PAE vs Pin vs Ids
20
20
44 mA
64 mA
84 mA
18
16
14
12
10
8
12 V
16 V
20 V
24 V
18
16
14
12
10
8
6
6
4
4
2
2
Freq = 36 GHz
Freq = 36 GHz
0
0
-10
0
5
10
15
20
-10
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Power Gain vs Pin vs Ids
Power Gain vs Pin vs VD
30
25
20
15
10
5
30
25
20
15
10
5
Freq = 36 GHz
Freq = 36 GHz
44 mA
64 mA
84 mA
12 V
16 V
20 V
10
24 V
15
0
0
-10
0
5
20
-10
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
13 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, Pin = +14dBm, +25 ºC
Drain Current vs Pin
Drain Current vs Pin vs Temp
300
250
200
150
100
50
300
250
200
150
100
50
28 GHz
32 GHz
36 GHz
38 GHz
- 40 C
+ 25 C
+ 85 C
Freq = 36 GHz
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Drain Current vs Pin vs VD
Drain Current vs Pin vs Ids
300
250
200
150
100
50
300
250
200
150
100
50
Freq = 36 GHz
12 V
16 V
20 V
24 V
Freq = 36 GHz
44 mA
64 mA
84 mA
15
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
20
Pin (dBm)
Pin (dBm)
Gate Current vs Temperature
1.0
- 40 C
+ 25 C
+ 85 C
0.5
0.0
-0.5
-1.0
26
28
30
32
34
36
38
40
Freq (GHz)
Data Sheet Rev. A Dec. 2021
|
Subject to change without notice
14 of 22
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, Tone Spacing = 100 MHz, +25 ºC
IMD3 vs Temperature
IMD3 vs Pout
0
-10
-20
-30
-40
-50
0
-10
-20
-30
-40
-50
- 40 C
+ 25 C
+ 85 C
31.95 GHz
35.95 GHz
37.95 GHz
Freq = 35.95 GHz
5
10
15
20
25
5
10
15
20
25
Pout (dBm / tone)
Pout (dBm / tone)
IMD3 vs VD
IMD3 vs Ids
0
-10
-20
-30
-40
-50
0
-10
-20
-30
-40
-50
16 V
18 V
20 V
24 V
44 mA
64 mA
84 mA
Freq = 35.95 GHz
Freq = 35.95 GHz
5
10
15
20
25
5
10
15
20
25
Pout (dBm / tone)
Pout (dBm / tone)
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions unless otherwise noted: VD = 20 V, IDQ = 64 mA, Tone Spacing = 100 MHz, +25 ºC
IMD5 vs Temperature
IMD5 vs Pout
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
- 40 C
+ 25 C
+ 85 C
31.95 GHz
35.95 GHz
37.95 GHz
Freq = 35.95 GHz
5
10
15
20
25
5
10
15
20
25
Pout (dBm / tone)
Pout (dBm / tone)
IMD5 vs VD
IMD5 vs Ids
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
16 V
18 V
20 V
24 V
44 mA
64 mA
84 mA
Freq = 35.95 GHz
Freq = 35.95 GHz
5
10
15
20
25
5
10
15
20
25
Pout (dBm / tone)
Pout (dBm / tone)
Data Sheet Rev. A Dec. 2021
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
21.95
ºC/W
Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA
PDiss = 1.28 W
No RF (quiescent DC operation)
Channel Temperature, TCH (No RF) (2)
113.1
°C
Thermal Resistance (θJC) (1)
23.17
145.0
ºC/W
°C
Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA
Freq = 28 GHz, ID_Drive = 139.7 mA, Pin = 14 dBm
Pout = 23.73 dBm, PDiss = 2.59 W
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance referenced to the back side of package
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Power Dissipation
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, Pin = +14dBm, +85ꢁºC
Dissipated Power vs Freq
5
4
3
2
1
0
26
28
30
32
34
36
38
40
Freq (GHz)
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Application Circuit
Bias-Down Procedure
Bias-Up Procedure
1. Set drain current limit to 500 mA, gate limit to 10 mA
2. Set VG to −4.0 V
1. Turn off RF signal
2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
4. Set VD to 0 V
3. Set VD to +20 V
4. Turn off VD supply
4. Adjust VG more positive until IDQ 64 mA
5. Apply RF signal
5. Turn off VG supply
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Evaluation Board and Assembly
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the connector
interface is optimized for the Southwest Microwave end launch connector 1092-01A-5.
Ref. Des.
C1, C3
Component
10 uF
Value
Manuf.
Various
Various
Various
Various
Part Number
CAP, 10 uF, 20%, 50 V, 20%, X5R, 1206
CAP, 0.01 uF, 10%, 50 V, X7R, 0402
RES, 5.1 OHM, 5%, 50 V, 0402
RES, 0 OHM, JMPR, 0402
C2, C4
0.01 uF
5.1 Ω
R1
R2, R3, R4
0 Ω
Southwest
Microwave
J1, J2
RF Connectors
CONN, 2.92mm, End Launch
1092-01A-5
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Mechanical Drawing & Pad Description
Dimensions in mm
Package is air cavity and non-hermetic, NiAu gold plated leads with minimum gold thickness of 0.1 um
Part Marking: QPA2225 = Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID
Pin Number
Label
GND
RFIN
N/C
Description
1, 3, 6, 8
Ground
2
RF input, DC grounded
No internal connections, however need to be grounded
RF output, DC grounded
Amplifier drain supply
Amplifier gate control
Bottom pad, ground
4, 5
7
RFOUT
VD
9
10
11
VG
GND
Data Sheet Rev. A Dec. 2021
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Solderability and Recommended Soldering Temperature Profile
1. Compatible with the latest version of J-STD-020, Lead-free solder, peak reflow temperature 260ꢀ°C.
Data Sheet Rev. A Dec. 2021
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QPA2225
®
28 - 38 GHz 0.4 Watt GaN Driver Amplifier
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
0B
ESDAꢁ/ꢁJEDEC JS-001-2017
ESDAꢁ/ꢁJEDEC JS-002-2014
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM)
C3
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
MSL5a
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
•
•
•
•
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained in this Data Sheet and any associated documents (“Data Sheet Information”) is believed to be reliable; however,
Qorvo makes no warranties regarding the Data Sheet Information and assumes no responsibility or liability whatsoever for the use of said
information. All Data Sheet Information is subject to change without notice. Customers should obtain and verify the latest relevant Data
Sheet Information before placing orders for Qorvo® products. Data Sheet Information or the use thereof does not grant, explicitly, implicitly
or otherwise any rights or licenses to any third party with respect to patents or any other intellectual property whether with regard to such
Data Sheet Information itself or anything described by such information.
DATA SHEET INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN,
AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR
IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE
IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of
the foregoing, Qorvo® products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Applications
described in the Data Sheet Information are for illustrative purposes only. Customers are responsible for validating that a particular
product described in the Data Sheet Information is suitable for use in a particular application.
© 2021 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc. | QORVO® is a registered trademark
of Qorvo US, Inc.
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