QPA2610 [QORVO]
2 Watt X-Band Power Amplifier;
| 型号： | QPA2610 |
| 厂家： | 
Qorvo |
| 描述： | 2 Watt X-Band Power Amplifier |
| 文件： | 总24页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA2610
2 Watt X-Band Power Amplifier
®
Product Overview
Qorvo's QPA2610 is a packaged, high performance power
amplifier fabricated on Qorvo's production 0.15 um GaN on
SiC process (QGaN15). Covering 8.5ꢀ-ꢀ10.5 GHz, the
QPA2610 provides > 2 W of saturated output power and 23
dB of large-signal gain while achieving an impressive 47%
power-added efficiency.
5 mm x 5 mm plastic overmold QFN
Packaged in a small 5 x 5 mm plastic overmold QFN, tight
lattice spacing requirements for phased array radar
applications is easily supported. RF input and output ports
are matched to 50Ω and include integrated DC blocking
capacitors. QPA2610 is part of a three-amplifier family and
is pin compatible to QPA2612 and QPA2611.
Key Features
• Frequency Range: 8.5 – 10.5 GHz
• Output Power (PIN = 10 dBm): > 33 dBm
• PAE (PIN = 10 dBm): > 47 %
• Small Signal Gain: > 37.5 dB
Lead-free and RoHS compliant.
• Input Return Loss: > 14 dB
• Output Return Loss: > 12 dB
• Recommended Bias: VD = 20 V, IDQ = 56 mA
• Package Size: 5.0 mm x 5.0 mm x 0.85 mm
Applications
Functional Block Diagram
• Radar
• Communications
• Satcom
VG
VD
RF IN
RF OUT
Ordering Information
Part No.
Description
QPA2610
2 Watt X-Band Power Amplifier
500 pcs. on 7 inch reel
QPA2610 Evaluation Board
QPA2610TR7
QPA2610EVB
Top View
Data Sheet Rev. C, August 2020 | Subject to change without notice
1 of 24
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
29.5 V
Parameter
Typ
Drain Voltage (VD)
Drain Voltage (VD)
20 V
Gate Voltage Range (VG)
Drain Current (ID)
−4 to 0 V
700 mA
Drain Current (IDQ
)
56 mA
Drain Current Under RF Drive (ID_DRIVE
)
See plots pg. 4
−2.8 to −2.0 V
See plots pg. 4
Gate Current (IG)
See plot pg. 16
8.8 W
Gate Voltage Range (VG)
Power Dissipation (PDISS), TBASE = 85 °C
Gate Current Under RF Drive (IG_DRIVE)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Input Power (PIN), Pulsed (100us/10%),
50 Ω, VD = 20 V, TBASE = 85 °C
18 dBm
18 dBm
Input Power (PIN), Pulsed (100us/10%),
VSWR 3:1, VD = 20 V, TBASE = 85 °C
Mounting Temperature (30 seconds max.)
Storage Temperature
260 °C
−55 to 150 °C
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Conditions
Min
Typ
Max
Units
GHz
dBm
%
Operational Frequency
8.5
10.5
Output Power (PIN = 10 dBm)
Power Added Efficiency (PIN = 10 dBm)
Small Signal Gain (CW)
Pulsed VD
Pulsed VD
33.9
47.4
38.5
19
dB
Input Return Loss (CW)
dB
Output Return Loss (CW)
14
dB
3RD Order IMD (PIN/Tone = 0 dBm)
POUT Temp. Coeff. (85ꢀ°C toꢀ25 °C, PIN = 10 dBm))
Sm. Sig. Gain Temp. Coefficient (85 °C toꢀ−40 °C)
Gate Leakage Current
10 MHz tone spacing
−15
dBc
dB/°C
dB/°C
mA
−0.21
−0.09
VD = 10 V, VG = −3.7 V
−1.23
Test conditions, unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Data Sheet Rev. C, August 2020 | Subject to change without notice
2 of 24
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, PIN = 10 dBm, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Freq. vs. Temp.
Power Added Eff. vs. Freq. vs. Temp.
35
34
33
32
31
30
29
60
55
50
45
40
35
30
25
20
15
10
-40 C
9.0
+25 C
9.5
+85 C
10.0
-40 C
9.0
+25 C
9.5
+85 C
10.0
8.0
8.0
8.0
8.5
10.5
11.0
11.0
11.0
8.0
8.0
8.0
8.5
10.5
11.0
Frequency (GHz)
Frequency (GHz)
Output Power vs. Freq. vs. VDRAIN
Power Added Eff. vs. Freq. vs. VDRAIN
36
35
34
33
32
31
30
29
60
55
50
45
40
35
30
25
20
15
10
16 V
18 V
9.0
20 V
9.5
22 V
10.0
24 V
10.5
16 V
18 V
9.0
20 V
9.5
22 V
10.0
24 V
10.5
8.5
8.5
11.0
Frequency (GHz)
Frequency (GHz)
Output Power vs. Freq. vs. IDQ
Power Added Eff. vs. Freq. vs. IDQ
36
35
34
33
32
31
30
29
60
55
50
45
40
35
30
25
20
15
10
28 mA
9.0
56 mA
9.5
84 mA
10.0
28 mA
9.0
56 mA
9.5
84 mA
10.0
8.5
10.5
8.5
10.5
11.0
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, August 2020 | Subject to change without notice
3 of 24
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, PIN = 10 dBm, Pulse Width = 100 us, Duty Cycle = 10%
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
300
280
260
240
220
200
180
160
5
4
3
2
1
0
-1
-2
-40 C
9.0
+25 C
9.5
+85 C
10.0
-40 C
9.0
+25 C
9.5
+85 C
10.0
8.0
8.0
8.0
8.5
10.5
11.0
11.0
11.0
8.0
8.0
8.0
8.5
10.5
11.0
11.0
11.0
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VDRAIN
Gate Current vs. Freq. vs. VDRAIN
350
300
250
200
150
100
50
5
4
3
2
1
0
-1
-2
16 V
8.5
18 V
9.0
20 V
9.5
22 V
10.0
24 V
10.5
16 V
18 V
9.0
20 V
9.5
22 V
10.0
24 V
10.5
0
8.5
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. IDQ
Gate Current vs. Freq. vs. IDQ
350
300
250
200
150
100
50
5
4
3
2
1
0
-1
-2
28 mA
9.0
56 mA
9.5
84 mA
10.0
28 mA
9.0
56 mA
9.5
84 mA
10.0 10.5
0
8.5
10.5
8.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, August 2020 | Subject to change without notice
4 of 24
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
36
34
32
30
28
26
24
22
60
55
50
45
40
35
30
25
20
15
10
8.5 GHz
-6 -4
9.5 GHz
0
10.5 GHz
8.5 GHz
-6 -4
9.5 GHz
0
10.5 GHz
-10
-8
-2
2
4
6
8
10
-10
1
-8
-2
2
4
6
8
10
Input Power (dBm)
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
300
250
200
150
100
50
0.8
0.6
0.4
0.2
0
8.5 GHz
-4
9.5 GHz
0
10.5 GHz
8.5 GHz
-6 -4
9.5 GHz
0
10.5 GHz
0
-0.2
-10
-8
-6
-2
2
4
6
8
10
-10
-8
-2
2
4
6
8
10
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
5 of 24
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Temp.
8.5 GHz
Output Power vs. Input Power vs. Temp.
9.5 GHz
36
34
32
30
28
26
24
22
36
34
32
30
28
26
24
22
-40 C
0
+25 C
2
+85 C
6
-40 C
0
+25 C
2
+85 C
6
-6
-4
-2
4
8
10
10
10
-6
-4
-2
4
8
10
10
10
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
8.5 GHz
9.5 GHz
-40 C
0
+25 C
2
+85 C
6
-40 C
0
+25 C
2
+85 C
6
-6
-4
-2
4
8
-6
-4
-2
4
8
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Drain Current vs. Input Power vs. Temp.
300
250
200
150
100
50
300
250
200
150
100
50
8.5 GHz
9.5 GHz
-40 C
0
+25 C
2
+85 C
6
-40 C
0
+25 C
2
+85 C
6
0
0
-6
-4
-2
4
8
-6
-4
-2
4
8
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
6 of 24
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Temp.
10.5 GHz
PAE vs. Input Power vs. Temp.
10.5 GHz
36
34
32
30
28
26
24
22
60
55
50
45
40
35
30
25
20
15
10
-40 C
0
+25 C
2
+85 C
6
-40 C
+25 C
2
+85 C
6
-6
-4
-2
4
8
10
-6
-4
-2
0
4
8
10
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
10.5 GHz
300
250
200
150
100
50
-40 C
0
+25 C
2
+85 C
6
0
-6
-4
-2
4
8
10
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
7 of 24
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. VDRAIN
8.5 GHz
Output Power vs. Input Power vs. VDRAIN
9.5 GHz
36
34
32
30
28
26
24
36
34
32
30
28
26
24
16V
-6
18V
-2
20V
22V
4
24V
6
16V
-6
18V
-2
20V
22V
4
24V
6
-10
-8
-4
0
2
8
10
10
10
-10
-8
-4
0
2
8
10
10
10
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. VDRAIN
PAE vs. Input Power vs. VDRAIN
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
8.5 GHz
9.5 GHz
16V
-6
18V
-2
20V
22V
4
24V
6
16V
-6
18V
-2
20V
22V
4
24V
6
-10
-8
-4
0
2
8
-10
-8
-4
0
2
8
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VDRAIN
Drain Current vs. Input Power vs. VDRAIN
300
250
200
150
100
50
300
250
200
150
100
50
8.5 GHz
9.5 GHz
16V
-6
18V
-2
20V
0
22V
24V
6
16V
-6
18V
-2
20V
0
22V
24V
6
0
0
-10
-8
-4
2
4
8
-10
-8
-4
2
4
8
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
8 of 24
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. VDRAIN
10.5 GHz
PAE vs. Input Power vs. VDRAIN
10.5 GHz
36
34
32
30
28
26
24
60
55
50
45
40
35
30
25
20
15
10
16V
-6
18V
-2
20V
22V
4
24V
6
16V
-6
18V
-2
20V
22V
4
24V
6
-10
-8
-4
0
2
8
10
-10
-8
-4
0
2
8
10
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VDRAIN
10.5 GHz
300
250
200
150
100
50
16V
-6
18V
-2
20V
0
22V
24V
6
0
-10
-8
-4
2
4
8
10
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
9 of 24
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. IDQ
8.5 GHz
Output Power vs. Input Power vs. IDQ
9.5 GHz
36
34
32
30
28
26
24
22
20
18
36
34
32
30
28
26
24
22
20
18
28mA
56mA
4
84mA
8
28mA
56mA
4
84mA
8
-10
-8
-6
-4
-2
0
2
6
10
10
10
-10
-8
-6
-4
-2
0
2
6
10
10
10
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. IDQ
PAE vs. Input Power vs. IDQ
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
8.5 GHz
9.5 GHz
28mA
56mA
4
84mA
8
28mA
56mA
4
84mA
8
-10
-8
-6
-4
-2
0
2
6
-10
-8
-6
-4
-2
0
2
6
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. IDQ
Drain Current vs. Input Power vs. IDQ
300
250
200
150
100
50
300
250
200
150
100
50
8.5 GHz
9.5 GHz
28mA
0
56mA
4
84mA
8
28mA
0
56mA
4
84mA
8
0
0
-10
-8
-6
-4
-2
2
6
-10
-8
-6
-4
-2
2
6
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
10 of 24
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. IDQ
10.5 GHz
PAE vs. Input Power vs. IDQ
36
34
32
30
28
26
24
22
20
18
60
55
50
45
40
35
30
25
20
15
10
10.5 GHz
28mA
56mA
4
84mA
8
28mA
56mA
4
84mA
8
-10
-8
-6
-4
-2
0
2
6
10
-10
-8
-6
-4
-2
0
2
6
10
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. IDQ
9.5 GHz
300
250
200
150
100
50
28mA
0
56mA
4
84mA
8
0
-10
-8
-6
-4
-2
2
6
10
Input Power (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Linearity
Test conditions unless otherwise noted: VD = 20 V, IDQ = 56 mA, T = 25 °C, 10 MHz Tone Spacing, CW
IMD3, IMD5 vs. PIN/Tone vs. Temp.
Fc = 8.5 GHz
IMD3, IMD5 vs. PIN/Tone vs. VDRAIN
Fc = 8.5 GHz
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
IM3 16 V
IM5 16 V
IM3 20 V
IM5 20 V
IM3 24 V
IM5 24 V
-5.0
-5.0
-5.0
-2.5 0.0
2.5
5.0
7.5
10.0
10.0
10.0
-5.0
-5.0
-5.0
-2.5 0.0
2.5
5.0
7.5
10.0
10.0
10.0
Input Power / Tone (dBm)
Input Power / Tone (dBm)
IMD3, IMD5 vs. PIN/Tone vs. Temp.
Fc = 9.5 GHz
IMD3, IMD5 vs. PIN/Tone vs. VDRAIN
Fc = 9.5 GHz
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
IM3 16 V
IM5 16 V
IM3 20 V
IM5 20 V
IM3 24 V
IM5 24 V
-2.5 0.0
2.5
5.0
7.5
-2.5 0.0
2.5
5.0
7.5
Input Power / Tone (dBm)
Input Power / Tone (dBm)
IMD3, IMD5 vs. PIN/Tone vs. Temp.
Fc = 10.5 GHz
IMD3, IMD5 vs. PIN/Tone vs. VDRAIN
Fc = 10.5 GHz
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
IM3 -40 C
IM5 -40 C
IM3 25 C
IM5 25 C
IM3 85 C
IM5 85 C
IM3 16 V
IM5 16 V
IM3 20 V
IM5 20 V
IM3 24 V
IM5 24 V
-2.5 0.0
2.5
5.0
7.5
-2.5 0.0
2.5
5.0
7.5
Input Power / Tone (dBm)
Input Power / Tone (dBm)
Data Sheet Rev. C, August 2020 | Subject to change without notice
12 of 24
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, Pulse Width = 100 us, Duty Cycle = 10%
2nd Harmonic vs. Fund. Freq. vs. Temp.
3rd Harmonic vs. Fund. Freq. vs. Temp.
-15
-20
-25
-30
-35
-40
-45
0
-10
-20
-30
-40
-50
-60
VD = 20 V, IDQ = 56 mA, Pin = 10 dBm
VD = 20 V, IDQ = 56 mA, Pin = 10 dBm
-40C
9.0
+25C
+85C
10.5
-40C
9.0
+25C
+85C
10.5
8.0
8.5
9.5
10.0
11.0
11.5
8.0
8.5
9.5
10.0
11.0
11.5
Frequency (GHz)
Frequency (GHz)
3rd Harmonic vs. Input Power vs Freq.
2nd Harmonic vs. Input Power vs Freq.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
VD = 20 V, IDQ = 56 mA, Temp. = 25 °C
VD = 20 V, IDQ = 56 mA, Temp. = 25 °C
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
-2.5 0.0
9.5 GHz
2.5
10.5 GHz
7.5
-5.0
5.0
10.0
-5.0
-2.5
0.0
2.5
5.0
7.5
10.0
Input Power (dBm)
Input Power (dBm)
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QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, CW
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
-40 C
9.0
+25 C
9.5
+85 C
10.0 10.5
16 V
8.5
18 V
9.0
20 V
9.5
22 V
10.0
24 V
10.5 11.0
7.5
8.0
8.0
8.0
8.5
11.0
11.5
7.5
8.0
8.0
8.0
11.5
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
16 V
18 V
20 V
22 V
24 V
-40 C
+25 C
+85 C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
7.5
8.5
9.0
9.5
10.0 10.5 11.0 11.5
7.5
8.5
9.0
9.5
10.0 10.5 11.0 11.5
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
16 V
18 V
20 V
22 V
24 V
-40 C
+25 C
+85 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
7.5
8.5
9.0
9.5
10.0 10.5 11.0 11.5
7.5
8.5
9.0
9.5
10.0 10.5 11.0 11.5
Frequency (GHz)
Frequency (GHz)
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QPA2610
®
2 Watt X-Band Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 56 mA, CW
Input RL vs. Freq. vs. IDQ
Gain vs. Freq. vs. IDQ
50
45
40
35
30
25
20
15
10
0
-5
28 mA
56 mA
84 mA
-10
-15
-20
-25
-30
28 mA
9.0
56 mA
9.5
84 mA
10.5
7.5
8.0
8.5
10.0
11.0
11.5
7.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
-5
28 mA
56 mA
84 mA
-10
-15
-20
-25
-30
7.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5
Frequency (GHz)
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QPA2610
®
2 Watt X-Band Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
11.30
ºC/W
Tbase = +85 °C, VD = 20 V, IDQ = 56 mA, PDISS = 1.12ꢀW
(quiescent, no RF)
Channel Temperature, TCH (Under RF) (2)
97.7
°C
Thermal Resistance (θJC) (1)
10.84
115.9
ºC/W
°C
Tbase = +85 °C, VD = 20 V, IDQ = 56 mA, ID_Drive = 260
mA, POUTꢀ=ꢀ33.7ꢀdBm, PIN = 10ꢀdBm, Freq. = 11ꢀGHz,
PDISS = 2.85 W (Pulse: 100us/10%)
Channel Temperature, TCH (Under RF) (2)
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF) (2)
Notes:
11.38
129.5
ºC/W
°C
Tbase = +85 °C, VD = 24 V, IDQ = 56 mA, ID_Drive = 279
mA, POUTꢀ=ꢀ34.5 dBm, PIN = 10ꢀdBm, Freq. = ꢀ8.5 GHz,
PDISS = 3.91ꢀW (Pulse: 100us/10%)
1. Thermal resistance is referenced to the back of the package.
2. IR scan equivalent temperatures. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance,
and Reliability Estimates
Power Dissipation and Maximum Gate Current
PIN = 10 dBm, Pulse Width = 100 us, Duty Cycle = 10%
QPA2610 Ig_max vs. Tch
Dissipated Power vs. Freq. vs. Vdrain
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Total Ig_max
16V 85C
22V 85C
18V 85C
24V 85C
20V 85C
10.5
0
8.0
8.5
9.0
9.5
10.0
11.0
110
120
130
140
150
160
170
180
Frequency (GHz)
Channel Temperature (°C)
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QPA2610
®
2 Watt X-Band Power Amplifier
Application Information
R4, C4
NOT USED FOR
PULSED OPERATION
Bias-up Procedure
Bias-down Procedure
Set ID limit to 750 mA, IG limit to 10 mA
Apply −4 V to VG
Turn off RF signal
Reduce VG to −4 V; ensure IDQ is approx. 0 mA
Set VD to 0 V
Apply +20 V to VD; ensure IDQ is approx. 0 mA
Adjust VG until IDQ = 56 mA
Turn on RF supply
Turn off VD supply
Turn off VG supply
Data Sheet Rev. C, August 2020 | Subject to change without notice
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QPA2610
®
2 Watt X-Band Power Amplifier
PinLayout
Pin Description
Pin Number
Symbol
NC
Description
1, 2, 4-15, 17-19, 21, 22, 24
No connection inside of package. Connection to PCB ground recommended
RF input. 50 Ω, DC blocked
3
RF IN
RF OUT
VD
16
20
23
25
RF output. 50 Ω, DC blocked
Drain voltage. Bypass network required; refer to page 19
Gate voltage. Bypass network required; refer to page 19
Center paddle ground
VG
GND
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QPA2610
®
2 Watt X-Band Power Amplifier
Evaluation Board
C1
R1
C2
C5
R2
C3
R5
C6
Bill of Materials
Ref. Des.
C1
Value
10 uF
1000 pF
0.1 uF
10 Ω
Description
Manuf.
various
Part Number
CAP, 10uF, 20%, 50V, 20%, X5R, 1206
CAP, 1000pF, 10%, 100V, X7R, 0402
CAP, 0.1uF, 10%, 50V, X7R, 0402
RES, 10 OHM, 5%, 0.1W, 0402
C3,C6
C2,C5
R2,R5
R1
various
various
various
0 Ω
RES, 0 OHM, JMPR, 0402
various
J1, J2
2.92mm Female End Launch Connector
Southwest Microwave
1092-01A-5
Data Sheet Rev. C, August 2020 | Subject to change without notice
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QPA2610
®
2 Watt X-Band Power Amplifier
Mechanical Information
NOTES:
Package base and leads are Ni-Au plated
Part Markings:
Part Number: QPA2610
Part Assembly Year: YY
Part Assembly Week: WW
Lot Number: MXXX
Dimensions are in millimeters
Data Sheet Rev. C, August 2020 | Subject to change without notice
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QPA2610
®
2 Watt X-Band Power Amplifier
Assembly Notes
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
Contact plating: Ni-Au.
Recommended Soldering Temperature Profile
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QPA2610
®
2 Watt X-Band Power Amplifier
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Measure
Symbol
Size (in)
0.189
0.209
0.051
0.315
0.079
0.217
0.362
0.472
Size (mm)
4.80
Length
A0
B0
K0
P1
P2
F
Width
5.30
Cavity
Depth
1.30
Pitch
8.00
Cavity to Perforation - Length Direction
2.00
Centerline Distance
Cavity to Perforation - Width Direction
5.50
Cover Tape
Carrier Tape
Width
Width
C
9.20
W
12.00
Data Sheet Rev. C, August 2020 | Subject to change without notice
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QPA2610
®
2 Watt X-Band Power Amplifier
Tape and Reel Information – Reel Dimensions
Standard T/R size = 500 pieces on a 7” reel.
Feature
Measure
Symbol
Size (in)
6.969
0.717
0.504
2.283
0.512
0.079
0.787
Size (mm)
177.0
18.2
Diameter
A
W2
W1
N
Flange
Thickness
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
12.8
58.0
C
13.0
Hub
B
2.0
D
20.0
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
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QPA2610
®
2 Watt X-Band Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1A
C3
3
ESDAꢁ/ꢁJEDEC JS-001-2014
Caution!
ESD-Sensitive Device
ESDAꢁ/ꢁJEDEC JS-002-2017
IPC/JEDEC J-STD-020
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
© 2020 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc.
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