QPA3069 [QORVO]
2.7 â 3.5 GHz 100 W GaN Power Amplifier;
| 型号： | QPA3069 |
| 厂家： | 
Qorvo |
| 描述： | 2.7 â 3.5 GHz 100 W GaN Power Amplifier |
| 文件： | 总19页 (文件大小：778K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA3069
2.7 – 3.5 GHz 100 W GaN Power Amplifier
®
Product Overview
Qorvo’s QPA3069 is a packaged, high-power S-band
amplifier fabricated on Qorvo’s production 0.25 um GaN
on SiC process (QGaN25). Covering 2.7ꢀ–ꢀ3.5 GHz, the
QPA3069 provides 50 dBm of saturated output power and
25 dB of large-signal gain while achieving 53% power-
added efficiency.
The QPA3069 is packaged in a 7 mm x 7 mm 48-pin
plastic overmolded package. It can support a variety of
operating conditions to best support system requirements.
With good thermal properties, it can support a range of
bias voltages.
Key Features
• Frequency Range: 2.7ꢀ–ꢀ3.5 GHz
• PSAT (PIN=25 dBm): > 50 dBm
The QPA3069 MMIC has DC blocking capacitors on both
RF ports, which are matched to 50 ohms. The QPA3069 is
ideal for military radar systems.
• PAE (PIN=25 dBm): > 53 %
• Power Gain (PIN=25 dBm): > 25 dB
• Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm
• Package Dimensions:7.00 x 7.00 x 0.85 mm
Lead-free and RoHS compliant.
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
Applications
36
1
2
35
• Radar
34
3
33
4
32
5
31 RF Out
RF In
RF In
6
30 RF Out
7
29
28
27
26
25
8
9
Ordering Information
10
11
12
Part No.
Description
2.7 – 3.5 GHz 100 W GaN Power
Amplifier (10 Pcs.)
QPA3069
13 14 15 16 17 18 19 20 21 22 23 24
250 piece 7” reel
QPA3069TR7
QPA3069EVB
Top View
Evaluation Board for QPA3069
Data Sheet Rev. C, September 2019
1 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Valueꢀ/ꢀRang
40 V
Parameter
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
30 V
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
−8 to +1 V
13.6 A
Drain Current (IDQ
)
300 mA
Gate Voltage Range (VG)
Operating Temperature
−2.8 to −2.0 V
−40 to +85 °C
See plot on
page 12
Gate Current (IG)
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Power Dissipation (PDISS), 85 °C
117 W
Input Power (PIN), Pulsed, 50 Ω, VD=28
V, IDQ=300 mA, 85 °C
31 dBm
Input Power (PIN), Pulsed, 3:1 VSWR,
VD=28 V, IDQ=300 mA, 85 °C
28 dBm
Soldering Temperature (30 seconds)
260 °C
Storage Temperature
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Min
Typ
Max
Units
Operational Frequency Range
2.7
3.5
GHz
Output Power (PIN = 25 dBm)
Power Added Efficiency (PIN = 25 dBm)
Small Signal Gain (CW)
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
2.7 GHz
3.1 GHz
3.5 GHz
50.4
50.5
50.1
54.3
55.9
55.8
31.1
31.7
29.3
13
dBm
dBm
dBm
%
%
%
dB
dB
dB
dB
dB
dB
dB
dB
dB
Input Return Loss (CW)
10
29
7
5
Output Return Loss (CW)
19
Second Harmonic (PIN = 25 dBm)
−23
−40
dBc
dBc
Third Harmonic (PIN = 25 dBm)
Gate Leakage (VD = 10 V, VG = −3.7 V)
POUT Temp. Coeff. (85ꢀ–ꢀ25 °C, PIN = 25 dBm))
−42.0
−4.5
−0.0001
mA
0.001
−0.041
dB/°C
dB/°C
Sm. Sig. Gain Temp. Coefficient (85 to ꢀ−40 °C, CW)
Test conditions, unless otherwise noted: T = 25 °C, VD = 30 V, IDQ = 300 mA, PW = 100 us, Duty Cycle = 10%
Data Sheet Rev. C, September 2019
2 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm, PW = 100 us, Duty Cycle = 10%
Power Added Eff. vs. Freq. vs. Temp.
Output Power vs. Freq. vs. Temp.
52
51
50
49
48
47
46
65
60
55
50
45
40
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
9
8
7
6
5
4
3
45
40
35
30
25
20
15
10
5
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-5
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. C, September 2019
3 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: IDQ = 300 mA, T = +25ꢁ°C, PIN = 25 dBm, PW = 100 us, Duty Cycle = 10%
Output Power vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. VD
52
51
50
49
48
47
46
65
60
55
50
45
40
24 V
26 V
28 V
30 V
32 V
24 V
26 V
28 V
30 V
32 V
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Drain Current vs. Freq. vs. VD
Gate Current vs. Freq. vs. VD
9
8
7
6
5
4
3
45
40
35
30
25
20
15
10
5
0
24 V
26 V
28 V
30 V
32 V
24 V
26 V
28 V
30 V
32 V
-5
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
Data Sheet Rev. C, September 2019
4 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 30 V, IDQ = 300 mA, T = +25ꢁ°C, PW = 100 us, Duty Cycle = 10%
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
55
50
45
40
35
30
25
20
70
60
50
40
30
20
10
0
2.7 GHz
3.1 GHz
3.5 GHz
2.9 GHz
3.3 GHz
2.7 GHz
2.9 GHz
3.1 GHz
3.3 GHz
3.5 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
8
50
45
40
35
30
25
20
15
10
5
2.7 GHz
3.1 GHz
3.5 GHz
2.9 GHz
7
6
5
4
3
2
1
0
3.3 GHz
2.7 GHz
3.1 GHz
3.5 GHz
2.9 GHz
3.3 GHz
0
-5
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. C, September 2019
5 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 30 V, IDQ = 300 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Temp.
Freq. = 2.7 GHz
Output Power vs. Input Power vs. Temp.
Freq. = 3.1 GHz
55
50
45
40
35
30
25
55
50
45
40
35
30
25
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
PAE vs. Input Power vs. Temp.
Freq. = 2.7 GHz
PAE vs. Input Power vs. Temp.
Freq. = 3.1 GHz
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 2.7 GHz
Drain Current vs. Input Power vs. Temp.
Freq. = 3.1 GHz
8
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. C, September 2019
6 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: VD = 30 V, IDQ = 300 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Temp.
Freq. = 3.5 GHz
PAE vs. Input Power vs. Temp.
Freq. = 3.5 GHz
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 3.5 GHz
8
7
6
5
4
3
2
1
0
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. C, September 2019
7 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: IDQ = 300 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. VD
Freq. = 3.1 GHz
Output Power vs. Input Power vs. VD
Freq. = 2.7 GHz
55
50
45
40
35
30
25
55
50
45
40
35
30
25
24 V
28 V
30 V
24 V
28 V
30 V
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
PAE vs. Input Power vs. VD
Freq. = 3.1 GHz
PAE vs. Input Power vs. VD
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
Freq. = 2.7 GHz
24 V
28 V
30 V
24 V
28 V
30 V
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Freq. = 3.1 GHz
Drain Current vs. Input Power vs. VD
8
8
Freq. = 2.7 GHz
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
24 V
28 V
30 V
24 V
28 V
30 V
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. C, September 2019
8 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: IDQ = 300 mA, T = +25ꢁ°C, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. VD
Freq. = 3.5 GHz
PAE vs. Input Power vs. VD
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
Freq. = 3.5 GHz
24 V
28 V
30 V
24 V
28 V
30 V
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Freq. = 3.5 GHz
8
7
6
5
4
3
2
1
0
24 V
28 V
30 V
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. C, September 2019
9 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: VD = 30 V, IDQ = 300 mA, T = +25ꢁ°C, PW = 100 us, Duty Cycle = 10%
2nd Harmonic vs. PIN vs. Freq.
3rd Harmonic vs. PIN vs. Freq.
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
2.7 GHz
2.9 GHz
3.1 GHz
3.3 GHz
3.5 GHz
2.7 GHz
2.9 GHz
3.1 GHz
3.3 GHz
3.5 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
2nd Harmonic vs. Freq. vs. PIN
3rd Harmonic vs. Freq. vs. PIN
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
20 dBm
2.8
22 dBm
3.0
24 dBm
3.1
26 dBm
3.3
3.5 GHz
3.4
20 dBm
2.8
22 dBm
3.0
24 dBm
3.1
26 dBm
3.3
3.5 GHz
3.4 3.5
2.7
2.9
3.2
3.5
2.7
2.9
3.2
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, September 2019
10 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: VD = 30 V, IDQ = 300 mA, T=+25ꢁ°C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
-40 C
2.8
+25 C
3.2
+85 C
3.4
24 V
2.6
28 V
2.8
30 V
3.2
32 V
3.4
35 V
3.6
0
0
2.2
2.4
2.4
2.4
2.6
3.0
3.6
3.8
3.8
3.8
4.0
4.0
4.0
2.2
2.4
2.4
2.4
3.0
3.8
3.8
3.8
4.0
4.0
4.0
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
24 V
28 V
30 V
32 V
35 V
-40 C
+25 C
+85 C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
2.2
2.6
2.8
3.0
3.2
3.4
3.6
2.2
2.6
2.8
3.0
3.2
3.4
3.6
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-40 C
2.8
+25 C
3.2
+85 C
3.4
24 V
2.6
28 V
2.8
30 V
3.2
32 V
3.4
35 V
3.6
2.2
2.6
3.0
3.6
2.2
3.0
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, September 2019
11 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
0.511
ºC/W
Tbase = 85 °C, VD = 30 V, IDQ = 300 mA, PDISS = 9.0 W
Channel Temperature, TCH (No RF drive) (2)
89.6
°C
Thermal Resistance (θJC) (1)
0.373
120.7
ºC/W
°C
Tbase = 85 °C, VD = 30 V, IDQ =300 mA, Freq = 2.7 GHz,
ID_Drive = 6.93 A, PIN = 25 dBm, POUT = 50.5 dBm,
PDISS = 95.7 W, PW = 100 us, DC = 10%
Channel Temperature, TCH (w/RF drive) (2)
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (w/RF drive) (2)
Notes:
0.391
128.0
ºC/W
°C
Tbase = 85 °C, VD = 32 V, IDQ = 300 mA, Freq = 2.7 GHz,
ID_Drive = 7.33 A, PIN = 25 dBm, POUT = 50.9 dBm,
PDISS = 110.0 W, PW = 100 us, DC = 10%
1. Thermal resistance determined to the back of the package (fixed at 85 °C)
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates
Dissipated Power and Maximum Gate Current
Dissipated Power vs. Freq. vs. VD
Max Gate Current vs. TCH
140
130
120
110
100
90
180
160
140
120
100
80
PIN = 25 dBm
Stage 1
Stage 2
Total Ig
80
70
60
60
50
40
40
24 V 85 C
30 V 85 C
26 V 85 C
32 V 85 C
28 V 85 C
20
30
20
0
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
110
120
130
140
150
160
170
180
Frequency (GHz)
Channel Temperature (°C)
Data Sheet Rev. C, September 2019
12 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Applications Information
C6
C7
R6
C2
R2
C4
C5
R4
R1
V
C8
C3
G_TOP
R3
V
D_TOP
C1
RF_INPUT
RF_OUTPUT
C9
V
R7
D_)BOTTOM
R8
R10
R12
C16
V
G_BOTTOM
C10
C15
R9
C12
C14
C11
C13
Notes:
1. VG & VD must be biased from both sides.
Bill of Materials
Reference Des.
C1,C3,C4,C8,C9,C10,C12,C15
C2,C6,C11,C13
C5,C14
Value
1000 pF
0.01 uF
10 uF
Description
Manuf. Part Number
Various
CAP, 1000pF, 10%, 100V, X7R, 0402
CAP, 0.01uF, ±10%, 50V, X7R, 0402
CAP, 10uF, 20%, 50V, 20%, X5R, 1206
CAP, 0.1uF, 10%, 50V, X7R, 0402
RES, 10 OHM, 5%, 1/10W, 0603
RES, 10 OHM, 5%, 0.1W, 0402
RES, 0 OHM, 1/10W, 0603
Various
Various
C7,C16
0.1 uF
Various
R1,R5,R7,R11
R2,R4,R6,R8,R9,R12
R3,R10
10 Ohm
10 Ohm
0 Ohm
Various
Various
Various
Southwest
1092-02A-5
Microwave
J1, J2
2.92 mm Female End Launch Connector
Data Sheet Rev. C, September 2019
13 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
R3
C5
R2
C2
R1
C3
C1
R5
R4
C6
C4
C7
R6
C8
C9
C10
R7
C11
R8
C15
Pad and coin location detail
R12
C16
C12
C13
R9
C14
R10
R11
RF PCB is Rogers 6035HTC, 0.010“ thick, 0.5 ounce copper both sides
Overall PCB is a multi-layer board with a coined center pad for improved thermal conductivity
Bias-Down Procedure
Bias-Up Procedure
1. Set ID (peak) limit to 7000 mA, IG limit to 60 mA
2. Set VG to −5.0 V
1. Turn off RF signal
2. Reduce VG to −5.0 V. Ensure IDQ ~ 0mA
4. Set VD to 0 V
3. Set VD +30 V
5. Turn off VD supply
4. Adjust VG more positive until IDQ 300 mA, peak
5. Apply RF signal
6. Turn off VG supply
Data Sheet Rev. C, September 2019
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QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Mechanical Information and Bond Pad Description
QPA3069
YYWW
MXXX
Unless otherwise specified, all dimensions are in mm.
Package leads are gold plated.
Part is mold encapsulated.
Tolerances:
.XX = ± 0.25
.XXX = ± 0.100
.XXXX = ± 0.0254
Bond Pad Description
Pad No.
Symbol
Description
1-5, 8-14, 16, 18, 20, 25-29,
32-36, 41, 43, 45, 47, 48
NC
No connection. Grounding these pins is recommended, but not required
6, 7
RF INPUT
VG1
RF Input; matched to 50ꢀΩ; DC blocked
Gate voltage, stage 1. Bias network is required; see Application Circuit as
an example
15, 46
Drain voltage, stage 1. Bias network is required; see Application Circuit as
an example
17, 44
VD1
VG2
Gate voltage, stage 2. Bias network is required; see Application Circuit as
an example
19, 42
21, 40
VD2_SENSE Power supply monitor line for VD2 (do not apply bias to these pads)
Drain voltage, stage 2. Bias network is required; see Application Circuit as
an example
22-24, 37-39
VD2
30, 31
RF OUTPUT
GND
RF Output; matched to 50ꢀΩ; DC blocked; DC grounded
Center Pad
Center pad must be grounded to PCB
Data Sheet Rev. C, September 2019
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QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Recommended Soldering Temperature Profile
Data Sheet Rev. C, September 2019
16 of 19
www.qorvo.com
QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Tape and Reel Information – Carrier and Cover Tape Dimensions
Tape and reel specifications for this part are also available on the Qorvo website.
Standard T/R size = 250 pieces on a 7” reel.
Feature
Measure
Length
Symbol
Size (in)
0.128
0.128
0.055
0.157
0.079
0.217
0.362
0.472
Size (mm)
3.25
A0
B0
K0
P1
P2
F
Width
3.25
Cavity
Depth
1.40
Pitch
4.00
Cavity to Perforation - Length Direction
2.00
Centerline
Distance
Cavity to Perforation - Width Direction
5.50
Cover Tape
Carrier Tape
Width
Width
C
9.20
W
12.00
Data Sheet Rev. C, September 2019
17 of 19
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QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Tape and Reel Information – Reel Dimensions
Packaging reels are used to prevent damage to devices during shipping and storage, loaded carrier tape is typically wound onto a
plastic take-up reel. The reel size is 7" diameter. The reels are made from high-impact injection-molded polystyrene (HIPS), which
offers mechanical and ESD protection to packaged devices.
Feature
Measure
Diameter
Symbol
Size (in)
6.969
Size (mm)
177.0
18.2
A
W2
W1
N
Flange
Thickness
0.717
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
12.8
0.504
58.0
2.283
C
13.0
0.512
Hub
B
2.0
0.079
D
20.0
0.787
Tape and Reel Information – Tape Length and Label Placement
Tape and reel specifications for this part are also available on the Qorvo website.
Standard T/R size = 250 pieces on a 7” reel.
Note 2
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Data Sheet Rev. C, September 2019
18 of 19
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QPA3069
®
2.7 – 3.5 GHz 100 W GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharge Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1C
C3
ANSI/ESDA/JEDEC JS-001
ANSI/ESDA/JEDEC JS-002
Caution!
ESD-Sensitive Device
Level 3 IPC/JEDEC J-STD-020
Solderability
Compatible with the latest version of J-STD-020 Lead-free solder, 260 °C.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. C, September 2019
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