QPD9300EVB3 [QORVO]
30 W, 28 V, 9.2 â 9.7 GHz, GaN RF IMFET;
| 型号： | QPD9300EVB3 |
| 厂家： | 
Qorvo |
| 描述： | 30 W, 28 V, 9.2 â 9.7 GHz, GaN RF IMFET |
| 文件： | 总16页 (文件大小：1064K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Product Overview
The QPD9300 is a 30 W (P3dB) internally matched discrete
GaN on SiC HEMT which operates from 9.2 to 9.7 GHz and
a 28 V supply rail. The device is fully matched to 50 Ω in
an industry standard air cavity package and is ideally suited
for military and civilian radar. The device can support
pulsed and linear operations.
ROHS compliant.
Evaluation boards are available upon request.
Key Features
• Frequency: 9.2 to 9.7 GHz
• Output Power (POUT)1: 34.3 W
• Gain1: 9.1 dB
• Typical DEFF1: 48.6 %
• Operating Voltage: 28 V
• Low thermal resistance package
• Pulse capable
Functional Block Diagram
Note 1: @ 9.4 GHz and 37 dBm EVB input power
Applications
• Marine radar
• Civilian radar
Output
Matching
Network
Input
Matching
Network
Part No.
Description
QPD9300EVB3
QPD9300SR
QPD9300TR7
9 – 10 GHz EVB
QPD9300 short reel of 100 parts.
QPD9300 7” reel of 500 parts.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 1 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
Drain Current, ID
−40 +25 +85
ꢁ°C
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current
+145
−7 to +2
11
V
V
+24 +28 +32
V
–
–
–
240
0.5
–
–
–
mA
A
A
Gate Current Range, IG
See page 4.
mA
4
Gate Voltage, VG
−2.8
V
Power Dissipation, 10% DC
1 mS PW, PDISS
78
W
Power Dissipation, Pulsed
(PD)2, 3
Power Dissipation, CW (PD)2
–
–
–
–
62
37
W
W
RF Input Power, 10% DC
1 mS PW, 9.4 GHz, T = 25ꢀ°C
+43
dBm
Notes:
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
°C
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
Storage Temperature
Notes:
−65 to +150
3. Pulse Width = 100 µS, Duty Cycle = 10%
4. To be adjusted to desired IDQ
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 2 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
RF Characterization – 9 – 10 GHz EVB Performance At 9.4 GHz1
Parameter
Gain, G
Min
Typ
7.8
Max
Units
ꢁdB
W
–
–
–
–
–
–
Output Power, POUT
Drain Efficiency, DEFF
Notes:
30.4
43.1
%
1. EVB Input Power = 37 dBm, VD = +28ꢁV, IDQ = 240ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 µS, Duty Cycle = 10%.
RF Characterization – 9 – 10 GHz EVB Performance At 9.5 GHz1
Parameter
Gain, G
Min
Typ
7.6
Max
Units
ꢁdB
W
–
–
–
–
–
–
Output Power, POUT
Drain Efficiency, DEFF
Notes:
29.2
41.8
%
1. EVB Input Power = 37 dBm, VD = +28ꢁV, IDQ = 240ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 µS, Duty Cycle = 10%.
RF Characterization – 9 – 10 GHz EVB Performance At 9.6 GHz1
Parameter
Gain, G
Min
Typ
7.5
Max
Units
ꢁdB
W
–
–
–
–
–
–
Output Power, POUT
Drain Efficiency, DEFF
28.2
39.7
%
Notes:
1. EVB Input Power = 37 dBm, VD = +28ꢁV, IDQ = 240ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 µS, Duty Cycle = 10%.
RF Characterization – Mismatch Ruggedness at 9.3 - 9.6 GHz1, 2
Symbol Parameter
Typical
VSWR
Notes:
Impedance Mismatch Ruggedness
ꢁ3:1
1. Test conditions unless otherwise noted: TA = +25 °C, VD = 28 V, IDQ = 240 mA, 1 mS PW, 10% DC
2. Driving input power is 43 dBm under matched condition at EVB input connector.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 3 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Maximum Gate Current
Maximum Gate Current vs. IR Surface Temperature
70
65
60
55
50
45
40
35
30
25
20
15
10
110
120
130
140
150
160
170
180
IR Surface Temperature (°C)
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 4 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Thermal and Reliability Information – Pulsed1
Peak IR Surface Temperature vs. Pulse Width vs. Dissipation Power
10% Duty Cycle, Backside of Package At 85°C
225
200
175
150
125
100
75
Pdiss = 86.4 W
Pdiss = 67.2 W
Pdiss = 48 W
Pdiss =28.8 W
Pdiss = 9.6 W
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (S)
Parameter
Conditions
Values Units
Thermal Resistance, IR (θJC)
1.15
96
°C/W
°C
85 °C Case
9.6 W Pdiss, 100 uS PW, 10% DC
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
1.35
124
1.42
153
1.46
183
1.54
218
°C/W
°C
85 °C Case
28.8 W Pdiss, 100 uS PW, 10% DC
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
°C/W
°C
85 °C Case
48 W Pdiss, 100 uS PW, 10% DC
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
°C/W
°C
85 °C Case
67.2 W Pdiss, 100 uS PW, 10% DC
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
°C/W
°C
85 °C Case
86.4 W Pdiss, 100 uS PW, 10% DC
Peak IR Surface Temperature (TCH)
1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 5 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Thermal and Reliability Information – CW1
Peak IR Surface Temperature vs. Power
Package Base at 85 C
300
275
250
225
200
175
150
125
100
75
5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 60.0 65.0 70.0
Power Dissipation (W)
Parameter
Conditions
Values Units
Thermal Resistance, IR (θJC)
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
Peak IR Surface Temperature (TCH)
Thermal Resistance, IR (θJC)
Peak IR Surface Temperature (TCH)
2.24
128
2.33
152
2.42
178
2.54
207
2.69
240
°C/W
°C
85 °C Case
19.2 W Pdiss, CW
°C/W
°C
85 °C Case
28.8 W Pdiss, CW
°C/W
°C
85 °C Case
38.4 W Pdiss, CW
°C/W
°C
85 °C Case
48 W Pdiss, CW
°C/W
°C
85 °C Case
57.6 W Pdiss, CW
1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 6 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
S-Parameters Over Temperatures Of 9 – 10 GHz EVB1
Notes:
1. VD = 28 V, IDQ = 240 mA.
S21
S11
20
10
0
-5
-40 °C
25 °C
85 °C
0
-10
-15
-20
-25
-30
-35
-10
-20
-30
-40
-50
-60
-40 °C
25 °C
85 °C
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
2.
S22
K-Factor
0
-5
5
4.5
4
-10
-15
-20
-25
-30
-35
-40
3.5
3
2.5
2
1.5
1
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
0.5
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 7 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Power Performance Over Temperatures Of 9 – 10 GHz EVB1, 2
Notes:
1. At QPD9300 Package.
2. EVB Input Power = 37 dBm, VD = 28 V, IDQ = 240 mA, 100 µS PW, 10% DC.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 8 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Power Performance Over Temperatures and VD Of 9 – 10 GHz EVB1, 2
Notes:
1. At QPD9300 Package.
2. EVB Input Power = 37 dBm, IDQ = 240 mA, 100 µS PW, 10% DC
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 9 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Pin Configuration and Description, and Package Marking1
Device Reference Plane
Notes:
1. The QPD9300 will be marked with the “QPD9300” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
Pin Description
Pin
Symbol
VG / RF IN
VD / RF OUT
Description
3
Gate voltage / RF Input
Drain voltage / RF Output
16
1, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 18, 19,
20, 21, 22, 23, 24, 25, 26
N/C
No Connection1
Package Base
2, 4, 15, 17, 27
GND
1 To be grounded in board layout.
start, the “MXXX” is the batch ID, ZZZ is unique for all parts within one assembly lot.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 10 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Package Dimensions1, 2, 3, 4, 5
Notes:
1. Dimension unit is mm.
2. Unless otherwise noted, dimension tolerance is ±0.127 mm.
3. Material:
Package Base: Laminate
Package Lid: Laminate
4. Package exposed metallization is gold plated.
5. Part is epoxy sealed.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 11 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Schematic – 9 – 10 GHz EVB
Bias-up Procedure
1. Set VG to -4 V
Bias-down Procedure
1. Turn off RF signal
2. Set ID current limit to 250 mA
3. Apply 28 V VD
4. Slowly adjust VG until ID is set to 240 mA
5. Set ID current limit to 0.6 A
6. Apply RF
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge
4. Turn off VG
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 12 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Layout - 9ꢀ–ꢀ10 GHz EVB1
C17
Notes:
1. PCB Material: RO4350B, 20 mil thickness, 1 oz copper cladding
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 13 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Bill Of material – 9 – 10 GHz EVB
Ref Des
C4, C10
C1, C3
Value
10000 pF, 100 V
1 uF, 100 V
100 pF, 250 V
1.8 pF, 200 V
1.0 pF, 200 V
10 uF, 100 V
220 uF, 100 V
10 Ω
Qty
2
2
2
2
3
2
1
1
Manufacturer
Part Number
08051C103KAZ2A
18121C105KAT2A
UQCSVA101JAT2A\500
UQCL2A1R8BAT2A\500
UQCL2A1R0BAT2A\500
22201C106MAT2A
UVY2A221MHD1TO
ERJ-2GEJ100X
AVX
AVX
C6, C11
C9, C13
C14, C15, C16
C5, C8
AVX
AVX
AVX
Murata
C17
R4
R5
J1, J2
Nichicon
Panasonic
Panasonic
Southwest Microwave
1 kΩ
Connector
1
2
ERJ-PA2J102X
1092-01A-5
C7, C12, R2, R3
Do Not Place
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 14 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Recommended Solder Temperature Profile
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 15 of 16 -
QPD9300
30 W, 28 V, 9.2 – 9.7 GHz, GaN RF IMFET
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
1B (500V) ANSI/ESD/JEDEC JS-001
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) C3 (1000V) ANSI/ESD/JEDEC JS-002
MSLꢀ–ꢀMoisture Sensitivity Level
MSL3
IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Package lead plating is NiAu. Au thickness is 0.095 µm.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Antimony Free
• Lead Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained in this Data Sheet and any associated documents (“Data Sheet Information”) is believed to be reliable;
however, Qorvo makes no warranties regarding the Data Sheet Information and assumes no responsibility or liability whatsoever for the
use of said information. All Data Sheet Information is subject to change without notice. Customers should obtain and verify the latest
relevant Data Sheet Information before placing orders for Qorvo® products. Data Sheet Information or the use thereof does not grant,
explicitly, implicitly or otherwise any rights or licenses to any third party with respect to patents or any other intellectual property whether
with regard to such Data Sheet Information itself or anything described by such information.
DATA SHEET INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting
the generality of the foregoing, Qorvo® products are not warranted or authorized for use as critical components in medical, life-saving,
or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death. Applications described in the Data Sheet Information are for illustrative purposes only. Customers are responsible for validating
that a particular product described in the Data Sheet Information is suitable for use in a particular application.
© 2020 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc. | QORVO® is a registered
trademark of Qorvo US, Inc.
Datasheet Rev. B, May. 28, 2020 | Subject to change without notice
www.qorvo.com
- 16 of 16 -
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