QPM2239 [QORVO]
13 â 15.5GHz 80W GaN Power Amplifier Module;
| 型号： | QPM2239 |
| 厂家： | 
Qorvo |
| 描述： | 13 â 15.5GHz 80W GaN Power Amplifier Module 高功率电源 射频 微波 |
| 文件： | 总18页 (文件大小：847K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPM2239
13 – 15.5GHz 80W GaN Power Amplifier Module
®
Product Overview
Qorvo’s QPM2239 is a packaged, high-power Ku-band
amplifier module, fabricated on Qorvo’s production 0.25
um GaN on SiC process (QGaN25). Covering 13ꢀ–ꢀ15.5
GHz, the QPM2239 provides 80 W of saturated output
power and 29 dB of small-signal gain while achieving >
25% power-added efficiency.
The QPM2239 is packaged in a 10-lead 19.05 x 19.05 mm
bolt-down package with a Cu base for superior thermal
management. It can support a variety of operating
conditions to best support system requirements. With
good thermal properties, it can support a range of bias
voltages and will perform well under CW operation.
Key Features
Frequency Range: 13 ꢀ– 15.5 GHz
PSAT (PIN = 25 dBm): 49 dBm
PAE (PIN = 25 dBm): > 25 %
The QPM2239 has DC blocking capacitors on both RF
ports, which are matched to 50 ohms.
IM3 ( POUT/Tone = 38 dBm): -22 dBc
Small Signal Gain: 29 dB
The QPM2239 is ideal for supporting communications and
radar applications in both commercial and military markets
Bias: CW, VD = +28 V, IDQ = 800 mA, VG = -2.5 V typ.
Package Dimensions: 19.05 x 19.05 x 4.5 mm
RoHS compliant
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
Commercial VSAT
Military Satcom
Datalinks
Radar
1
2
10
9
8
7
3
4
Ordering Information
5
Part No.
QPM2239
Description
13-15.5GHz 80W GaN Power Amplifier Module
6
QPM2239S2
QPM2239EVB1
Samples (2 pcs. pack)
Evaluation Board for QPM2239
Data Sheet Rev. A, December 19, 2018
1 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Min
Typ
+28
800
Max Units
Parameter
Valueꢀ/ꢀRange
+29.5 V
Drain Voltage (VD)
Drain Current, Quiescent (IDQ
V
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
)
900
mA
mA
V
−6 to 0 V
12.5 A
Drain Current, RF (ID_Drive
)
See chart page 3, 4, 6
−2 to -2.9
Gate Voltage Typ. Range (VG)
Gate Current (IG)
See chart page 13
234 W
Gate Current, RF (IG_Drive
TBASE Range
)
See chart page 6
mA
°C
Power Dissipation (PDISS), 85 °C
Input Power (PIN), CW, 50 Ω,
VD =28 V, IDQ =800 mA, TBASE = 85 °C
Input Power (PIN), CW, 3:1 VSWR,
VD =28 V, IDQ =800 mA, TBASE = 85 °C
−40
+85
28 dBm
27 dBm
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Soldering Temperature (30 seconds)
Storage Temperature
260 °C
−55 to +150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ
Max
Units
GHz
dBm
%
Operational Frequency Range
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
13
15.5
PIN = +25 dBm
PIN = +25 dBm
49
25
3RD Intermodulation Products, IM3 POUT/Tone = +38 dBm; Δf = 10 MHz
5TH Intermodulation Products, IM5 POUT/Tone = +38 dBm; Δf = 10 MHz
Small Signal Gain, S21
−22
−30
29
dBc
dBc
dB
Input Return Loss, IRL
15
dB
Output Return Loss, ORL
15
dB
PSAT Temperature Coefficient
S21 Temperature Coefficient
Notes:
TDIFF = −40°C to +85°C ; PIN = +25 dBm
TDIFF = −40°C to +85°C
−0.01
−0.11
dBm/°C
dB/°C
1. Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, VG = -2.5V +/- typical , TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
2. TBASE is back side of package
Data Sheet Rev. A, December 19, 2018
2 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
Output Power vs. Frequency vs. TBASE
Output Power vs. Frequency vs. Pin
50.0
49.5
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
50
49
49
48
48
47
47
46
46
45
PIN = 24 dBm
Pin = 26 dBm
Pin = 25 dBm
Pin = 24 dBm
-40C
+25C
+85C
Pin = 23 dBm
TBASE = 25 °C
12.5 13
12.5
13
13.5
14
14.5
15
15.5
16
13.5
14
14.5
15
15.5
16
16
16
Frequency (GHz)
Frequency (GHz)
PAE vs. Frequency vs. TBASE
PAE vs. Frequency vs. Pin
35
33
31
29
27
25
23
21
19
17
15
35
PIN = 24 dBm
TBASE = 25 °C
33
31
29
27
25
23
21
19
17
15
Pin = 23 dBm
Pin = 24 dBm
Pin = 25 dBm
Pin = 26 dBm
-40C
+25C
+85C
12.5
13
13.5
14
14.5
15
15.5
16
12.5
13
13.5
14
14.5
15
15.5
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Frequency vs. TBASE
Drain Current vs. Frequency vs. Pin
12
11
10
9
12
11
10
9
PIN = 24 dBm
8
8
7
7
6
6
5
5
4
4
Pin = 26 dBm
Pin = 25 dBm
Pin = 24 dBm
-40C
+25C
+85C
3
3
2
2
1
1
Pin = 23 dBm
TBASE = 25 °C
13
0
12.5
0
12.5
13
13.5
14
14.5
15
15.5
16
13.5
14
14.5
15
15.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, December 19, 2018
3 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
Output Power vs. Frequency vs. VD
Output Power vs. Frequency vs. IDQ
50.0
49.5
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
50.0
49.5
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
PIN = 24 dBm
PIN = 24 dBm
TBASE = 25 °C
TBASE = 25 °C
28V_800mA
25V_800mA
20V_800mA
28V_800mA
28V_600mA
12.5
13
13.5
14
14.5
15
15.5
16
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Frequency (GHz)
PAE vs. Frequency vs. VD
PAE vs. Frequency vs. IDQ
35
33
31
29
27
25
23
21
19
17
15
35
33
31
29
27
25
23
21
19
17
15
PIN = 24 dBm
PIN = 24 dBm
TBASE = 25 °C
TBASE = 25 °C
20V_800mA
25V_800mA
28V_800mA
28V_600mA
28V_800mA
12.5
13
13.5
14
14.5
15
15.5
16
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Frequency vs. VD
Drain Current vs. Frequency vs. IDQ
12
11
10
9
12
11
10
9
8
8
7
7
6
6
5
5
4
4
28V_800mA
25V_800mA
3
3
28V_800mA
2
2
1
1
20V_800mA
28V_600mA
PIN = 24 dBm
15.5
PIN = 24 dBm
15.5
TBASE = 25 °C
13
TBASE = 25 °C
13
0
12.5
0
12.5
13.5
14
14.5
15
16
13.5
14
14.5
15
16
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, December 19, 2018
4 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
Output Power vs. Pin vs. TBASE
Output Power vs. Pin vs. Frequency
50
48
46
44
42
40
38
36
34
32
30
28
26
50
48
46
44
42
40
38
36
34
32
30
28
26
Frequency = 14.5 GHz
TBASE = 25 °C
13 GHz
-40C
+25C
+85C
14 GHz
15 GHz
15.5 GHz
-5
-5
-5
0
5
10
15
20
25
30
30
30
-5
-5
-5
0
5
10
15
20
25
30
30
30
Pin (dBm)
Pin (dBm)
PAE vs. Pin vs. TBASE
Frequency = 14.5 GHz
PAE vs. Pin vs. Frequency
26
24
22
20
18
16
14
12
10
8
35
30
25
20
15
10
5
TBASE = 25 °C
13 GHz
14 GHz
15 GHz
15.5 GHz
-40C
+25C
+85C
6
4
2
0
0
0
5
10
15
20
25
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Large Signal Gain vs. Pin vs. TBASE
Large Signal Gain vs. Pin vs. Frequency
40
38
36
34
32
30
28
26
24
22
20
40
38
36
34
32
30
28
26
24
22
20
Frequency = 14.5 GHz
TBASE = 25 °C
13 GHz
14 GHz
15 GHz
15.5 GHz
-40C
+25C
+85C
0
5
10
15
20
25
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A, December 19, 2018
5 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
Drain Current vs. Pin vs. TBASE
Drain Current vs. Pin vs. Frequency
12
11
10
9
12
11
10
9
TBASE = 25 °C
Frequency = 14.5 GHz
8
8
7
7
6
6
5
5
4
4
13 GHz
3
3
14 GHz
15 GHz
15.5 GHz
-40C
2
2
+25C
+85C
1
1
0
0
-5
0
5
10
15
20
25
30
-5
0
5
10
15
20
25
30
Pin (dBm)
Pin (dBm)
Gate Current vs. Pin vs. TBASE
Gate Current vs. Pin vs. Frequency
220
200
180
160
140
120
100
80
220
200
180
160
140
120
100
80
TBASE = 25 °C
Frequency = 14.5 GHz
13 GHz
14 GHz
15 GHz
15.5 GHz
-40C
+25C
+85C
60
60
40
40
20
20
0
0
-20
-20
-5
0
5
10
15
20
25
30
-5
0
5
10
15
20
25
30
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A, December 19, 2018
6 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, Tone Spacing = 10 MHz, TBASE = +25ꢁ°C
IM3 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 13 GHz
Frequency = 13 GHz
Δf = 10 MHz
Δf = 10 MHz
-40C
+25C
+85C
-40C
+25C
+85C
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Bias
IM5 vs. Output Power vs. Bias
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 13 GHz
TBASE = 25 °C
TBASE = 25 °C
Frequency = 13 GHz
Δf = 10 MHz
Δf = 10 MHz
28V_800mA
28V_600mA
20V_800mA
20V_600mA
28V_800mA
28V_600mA
20V_800mA
20V_600mA
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Tone Spacing
IM5 vs. Output Power vs. Tone Spacing
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TBASE = 25 °C
Frequency = 13 GHz
Frequency = 13 GHz
TBASE = 25 °C
10 MHz
100 MHz
300 MHz
20 MHz
200 MHz
400 MHz
50 MHz
250 MHz
500 MHz
10 MHz
100 MHz
300 MHz
20 MHz
200 MHz
400 MHz
50 MHz
250 MHz
500 MHz
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
Data Sheet Rev. A, December 19, 2018
7 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, Tone Spacing = 10 MHz, TBASE = +25ꢁ°C
IM3 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 14.25 GHz
Frequency = 14.25 GHz
Δf = 10 MHz
Δf = 10 MHz
-40C
+25C
+85C
-40C
+25C
+85C
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Bias
IM5 vs. Output Power vs. Bias
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 14.25 GHz
TBASE = 25 °C
TBASE = 25 °C
Frequency = 14.25 GHz
Δf = 10 MHz
Δf = 10 MHz
28V_800mA
28V_600mA
20V_800mA
20V_600mA
28V_800mA
28V_600mA
20V_800mA
20V_600mA
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Tone Spacing
IM5 vs. Output Power vs. Tone Spacing
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TBASE = 25 °C
Frequency = 14.25 GHz
Frequency = 14.25 GHz
TBASE = 25 °C
10 MHz
100 MHz
300 MHz
20 MHz
50 MHz
250 MHz
500 MHz
10 MHz
100 MHz
300 MHz
20 MHz
50 MHz
250 MHz
500 MHz
200 MHz
400 MHz
200 MHz
400 MHz
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
Data Sheet Rev. A, December 19, 2018
8 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, Tone Spacing = 10 MHz, TBASE = +25ꢁ°C
IM3 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 15.5 GHz
Frequency = 15.5 GHz
Δf = 10 MHz
Δf = 10 MHz
-40C
+25C
+85C
-40C
+25C
+85C
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Bias
IM5 vs. Output Power vs. Bias
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 15.5 GHz
TBASE = 25 °C
TBASE = 25 °C
Frequency = 15.5 GHz
Δf = 10 MHz
Δf = 10 MHz
28V_800mA
28V_600mA
20V_800mA
20V_600mA
28V_800mA
28V_600mA
20V_800mA
20V_600mA
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Tone Spacing
IM5 vs. Output Power vs. Tone Spacing
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TBASE = 25 °C
Frequency = 15.5 GHz
Frequency = 15.5 GHz
TBASE = 25 °C
10 MHz
100 MHz
300 MHz
20 MHz
50 MHz
250 MHz
500 MHz
10 MHz
100 MHz
300 MHz
20 MHz
50 MHz
250 MHz
500 MHz
200 MHz
400 MHz
200 MHz
400 MHz
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power per Tone (dBm)
Data Sheet Rev. A, December 19, 2018
9 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
IM3 vs. Tone Spacing vs. Frequency
IM5 vs. Tone Spacing vs. Frequency
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TBASE = 25 0
C
TBASE = 25 0
C
Pin/Tone = 10 dBm
Pin/Tone = 10 dBm
13
GHz
13
GHz
14.25 GHz
15.5 GHz
14.25 GHz
15.5 GHz
0
0
0
50 100 150 200 250 300 350 400 450 500
Tone Spacing (MHz)
0
0
0
50 100 150 200 250 300 350 400 450 500
Tone Spacing (MHz)
IM3 vs. Tone Spacing vs. Frequency
IM5 vs. Tone Spacing vs. Frequency
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TBASE = 25 0
C
TBASE = 25 0
C
Pin/Tone = 15 dBm
Pin/Tone = 15 dBm
13
GHz
13
GHz
14.25 GHz
15.5 GHz
14.25 GHz
15.5 GHz
50 100 150 200 250 300 350 400 450 500
Tone Spacing (MHz)
50 100 150 200 250 300 350 400 450 500
Tone Spacing (MHz)
IM3 vs. Tone Spacing vs. Frequency
IM5 vs. Tone Spacing vs. Frequency
-10
-15
-20
-25
-30
-35
-40
-45
-50
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TBASE = 25 0
C
TBASE = 25 0
C
Pin/Tone = 20 dBm
Pin/Tone = 20 dBm
13
GHz
13
GHz
14.25 GHz
15.5 GHz
14.25 GHz
15.5 GHz
50 100 150 200 250 300 350 400 450 500
Tone Spacing (MHz)
50 100 150 200 250 300 350 400 450 500
Tone Spacing (MHz)
Data Sheet Rev. A, December 19, 2018
10 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Harmonic
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
2ND Harmonic vs. PIN vs. Temperature
2ND Harmonic vs. PIN vs. Bias
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
Frequency = 13.75 GHz
Frequency = 13.75 GHz
28V_800mA
28V_600mA
25V_800mA
20V_800mA
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2ND Harmonic vs. PIN vs. Bias
2ND Harmonic vs. PIN vs. Temperature
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
Frequency = 14.5 GHz
Frequency = 14.5 GHz
28V_800mA
28V_600mA
25V_800mA
20V_800mA
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2ND Harmonic vs. PIN vs. Bias
2ND Harmonic vs. PIN vs. Temperature
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
Frequency = 15.5 GHz
Frequency = 15.5 GHz
28V_800mA
28V_600mA
25V_800mA
20V_800mA
-40 C
+25 C
+85 C
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Data Sheet Rev. A, December 19, 2018
11 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW, VD = 28 V, IDQ = 800 mA, TBASE = +25ꢁ°C
Small Signal Gain vs. Frequency vs. TBASE
Small Signal Gain vs. Frequency vs. Bias
40
38
36
34
32
30
28
26
24
22
20
18
16
40
38
36
34
32
30
28
26
24
22
20
18
16
TBASE = 25 °C
28V_800mA
28V_600mA
25V_800mA
22V_800mA
-40C
+25C
+85C
12.5
13
13.5
14
14.5
15
15.5
16
16
16
12.5
13
13.5
14
14.5
15
15.5
16
16
16
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency vs. TBASE
Input Return Loss vs. Frequency vs. Bias
0
-3
-3
-6
TBASE = 25 °C
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-33
-36
-39
-12
-15
-18
-21
-24
-27
-30
-33
-36
-39
28V_800mA
28V_600mA
25V_800mA
22V_800mA
-40C
+25C
+85C
12.5
13
13.5
14
14.5
15
15.5
12.5
13
13.5
14
14.5
15
15.5
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency vs. TBASE
Output Return Loss vs. Frequency vs. Bias
0
-3
-3
-6
TBASE = 25 °C
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-33
-36
-39
-12
-15
-18
-21
-24
-27
-30
-33
-36
-39
28V_800mA
28V_600mA
25V_800mA
22V_800mA
-40C
+25C
+85C
12.5
13
13.5
14
14.5
15
15.5
12.5
13
13.5
14
14.5
15
15.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, December 19, 2018
12 of 18
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QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
0.49
ºC/W
TBASE = 85 °C
VD = 28 V, IDQ = 800 mA
PDISS = 22.4 W
Channel Temperature, TCH (Quiescent) (2)
96
°C
ºC/W
°C
Thermal Resistance (θJC) (1)
0.49
186
TBASE = 85 °C, CW VD = 28 V, IDQ = 800 mA,
Freq = 14.5 GHz, ID_DRIVE = 9.9 A, PIN = 25 dBm, POUT = 48.5 dBm,
PDISS = 207 W
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of package (85 °C)
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates,” located here https://www.qorvo.com/products/d/da006480
Power Dissipated vs. Frequency vs. Pin
Gate Current Maximum vs. TCH vs. Stage
250
230
210
190
170
150
130
110
90
220
200
180
160
140
120
100
80
VD = 28 V, IDQ = 800 mA
TBASE = 85 °C
Total
Stage 3
Stage 2
Stage 1
Pin = 26 dBm
Pin = 25 dBm
Pin = 24 dBm
Pin = 23 dBm
60
40
70
20
0
50
120 130 140 150 160 170 180 190 200 210
Channel Temperature (0C)
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Data Sheet Rev. A, December 19, 2018
13 of 18
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QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Applications Circuit
C3
C2
C12
C11
10 uF
0.1 uF
10 uF
0.1 uF
1
10
2
3
9
8
VG
VD
RF OUT
RF IN
7
6
4
5
C9
C8
C5
C6
10 uF
0.1 uF
0.1 uF
10 uF
Notes:
1. VG & VD must be biased from both sides.
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 12.5A, IG limit to 100 mA
2. Set VG to −5.0 V. Ensure IDQ ~ 0mA
3. Set VD +28 V
1. Turn off RF signal
2. Reduce VG to −5.0 V. Ensure IDQ ~ 0mA
4. Set VD to 0 V
4. Adjust VG more positive until IDQ = 800 mA,
5. Turn off VD supply
6. Turn off VG supply
VG ~ −2.5 V +/- typical
5. Apply RF signal
Data Sheet Rev. A, December 19, 2018
14 of 18
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QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Application Evaluation Board (EVB)
GND GND
VG1 VG1
GND GND
VD1 VD1
VG2 VG2
GND GND
VD2 VD2
GND GND
Bill of Materials
Reference Des.
U1
Value
Description
Manuf.
Qorvo
Part Number
-
QPM2239-SM
C2, C5, C8, C11
C3, C6, C9, C12
H1, H2, H3, H4
S1 – S7
0.1 uF
CAP, 0.1uF, 10%, 50V, X7R, 0805
CAP, 10uF, 20%, 50V, X5R, 1206
Header, connector 2x2, SMD
Various
10 uF
Various
-
Various
-
-
Screw, Cap, socket head, 2-56x1/8”
Screw, Cap, socket head, 0-80x3/32’
Female End Launch Connector
Various
S9 – S12
Various
J1, J2
SMA
Southwest Microwave
292-04A-5
Rogers 6035HTC, 10 mil dielectric, 0.5 oz. copper
(gold plated), 2 layers
PCB
-
-
-
Rogers Corp.
Carrier
Solder
T-Carrier, Copper C110, 1.744 x 2.201 x 0.275”
Custom, Qorvo
Inventec Performance Syntech, SN62, T3,
Paste, solder, syntech, Sn62/Pb36/Ag2
Chemicals USA
90.5, 250J
Epoxy
-
-
Epoxy, Ablebond 84-1LMI 3cc
Henkel Corporation
Arctic Silver
84-1LMI
Thermal Compound
Chem, thermal compound, Silver GR
Artic Silver 5 AS5-3.5G
Data Sheet Rev. A, December 19, 2018
15 of 18
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QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Mechanical Information
Notes:
1. Materials:
Package base: Copper
Finish
Leads
Finish
LID
: Gold
: Alloy 194
: Gold
: LCP (Liquid Crystal Polymer)
1
10
2
3
4
9
8
7
2. Part is epoxy sealed
3. Part Marking:
QPM2239-CP: Part number
YY: Part assembly year
5
6
WW: Part assembly week
ZZZ: Serial number
MXXX: Batch ID
4. Dimensions: inches
5. Tolerances:
.XX: ꢂ 0.01
.XXX: ꢂ 0.005
.XXXX: ꢂ 0.0010
Angles: ꢂ 0.5 0
Pin Description
Pin No. Symbol Description
1
VG1
Gate voltage Amp 1. Bias network is required; see recommended Application Circuit on page 14
2, 4, 7, 9 Ground
Must be grounded to PCB
3
RFIN
VG2
RF Input; matched to 50ꢀΩ, DC blocked
5
Gate voltage Amp 2. Bias network is required; see recommended Application Circuit on page 14
Drain voltage Amp 2. Bias network is required; see recommended Application Circuit on page 14
RF Output; matched to 50ꢀΩ, DC blocked
6
VD2
8
RFOUT
VD1
10
Drain voltage Amp 1. Bias network is required; see recommended Application Circuit on page 14
Data Sheet Rev. A, December 19, 2018
16 of 18
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QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB
and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:
4. Apply no-flux solder to each pin of the QPA3055P. The component leads should be manually soldered, and the
package should not be subjected to conventional reflow processes. The use of no-clean solder to avoid washing
after soldering is recommended.
Solderability
The component leads should be manually soldered, and the package cannot be subjected to conventional reflow
processes.
Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260ꢀ°C
The use of no-clean solder to avoid washing after soldering is recommended
Data Sheet Rev. A, December 19, 2018
17 of 18
www.qorvo.com
QPM2239
®
13 – 15.5GHz 80W GaN Power Amplifier Module
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
0B
C2A
N/A
ANSI/ESD/JEDEC JS-001
Caution!
ESD-Sensitive Device
ANSI/ESD/JEDEC JS-002
Blank, null, no content
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements.
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. A, December 19, 2018
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