RFCM3328SQ [QORVO]

45-1218 MHz GaAs/GaN Power Doubler Module;


型号：	RFCM3328SQ
厂家：	Qorvo
描述：	45-1218 MHz GaAs/GaN Power Doubler Module
文件：	总8页 (文件大小：681K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

Product Overview

The RFCM3328 is a Power Doubler amplifier SMD

Module. The part employs GaAs pHEMT die and GaN

HEMT die, has high output capability, and is operated

from 45 MHz to 1218 MHz. It provides excellent linearity

and superior return loss performance with low noise and

optimal reliability.

RFCM3328

9 pin, 9.0 mm x 8.0 mm x 1.375 mm

DC current of the device can be externally adjusted for

optimum

distortion

performance

versus

power

consumption over a wide range of output level.

Key Features

 Excellent Linearity

 Superior Return Loss Performance

 Extremely Low Distortion

 Optimal Reliability

 Low Noise

 Unconditionally Stable Under all Terminations

 Extremely High Output Capability

 25 dB Min. Gain at 1218 MHz

 480 mA Max. at 24 VDC

 Temperature Sensing Feature

Functional Block Diagram

Current

Setting

Temperature

Sensing

V+

INPUT

OUTPUT

Applications

 45 MHz to 1218 MHz CATV Amplifier Systems

RFCM3328

Ordering Information

Part No.

Description

RFCM3328SB

RFCM3328SQ

RFCM3328SR

RFCM3328TR7

RFCM3328TR13

Sample bag with 5 pieces

Sample bag with 25 pieces

7” Reel with 100 pieces

7” Reel with 500 pieces

13” Reel with 1000 pieces

RFCM3328PCBA-410 Fully Assembled Evaluation Board

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

1 of 8

www.qorvo.com

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

Absolute Maximum Ratings

Parameter

Rating

RF Input Voltage (single tone; on evaluation board)

75 dBmV

DC Supply Over-Voltage (5 minutes)

30 V

Storage Temperature

−40 to +100ꢀ°C

−30 to +110ꢀ°C

Operating Mounting Base Temperature

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the

device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability.

Electrical Specifications

Parameter

Conditions⁽¹⁾

Min

Typ

Max

1218

24.0

26.5

3.0

Units

MHz

Operational Frequency Range

Power Gain

45 MHz

23.0

25.0

1.0

23.5

25.5

2.0

1218 MHz

Slope⁽²⁾

45 MHz to 1218 MHz

45 MHz to 1218 MHz (Peak to Valley)

45 MHz to 320 MHz

Flatness of Frequency Response

Input Return Loss

1.5

-20

-19

-18

-16

-15

-18

-17

-15

320 MHz to 640 MHz

640 MHz to 870 MHz

870 MHz to 1000 MHz

1000 MHz to 1218 MHz

45 MHz to 320 MHz

Output Return Loss

320 MHz to 640 MHz

640 MHz to 1218 MHz

50 MHz to 1218 MHz

Noise Figure

2.5

470

3.7

-80

-76

-80

3.5

Total Current Consumption (DC)

480

K/W

dBc

Thermal Resistance

Junction to Mounting Base

CTB

XMOD

CSO

CIN

V_O= 61 dBmV at 1218 MHz,

22 dB extrapolated tilt,

79 analog channels plus

111 digital channels (-6 dB offset)⁽³⁾⁽⁵⁾

-74

-72

-74

CTB

V_O= 62 dBmV at 1000 MHz,

18 dB extrapolated tilt,

79 analog channels plus

75 digital channels (-6 dB offset)⁽⁴⁾⁽⁵⁾

-73

-68

dBc

XMOD

CSO

CIN

Notes:

1. Test conditions unless otherwise noted: V+=24 V, T_MB=30 °C, Z_S=Z_L=75 Ω, I_DC=I_DCtypical.

2. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.

3. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +39 dBmV to +48.3 dBmV tilted output level,

plus 111 digital channels, -6 dB offset relative to the equivalent analog carrier.

4. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +44 dBmV to +53.4 dBmV tilted output level,

plus 75 digital channels, -6 dB offset relative to the equivalent analog carrier.

5. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6.

Composite Triple Beat (CTB) - The CTB parameter is defined by ANSI/SCTE 6.

Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of

the carrier being tested.

Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

2 of 8

www.qorvo.com

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

RFCM3328 Current Adjustment

The RFCM3328 can be operated over a wide range of current to provide maximum required performance with minimum

current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current between

470 mA and 350 mA (typ.). Within the recommended range of current between 470 mA and 370 mA gain (S21) change is

less than 0.2 dB (typ.) and noise figure change is less than 0.2 dB (typ.).

Device Current versus Resistor R3 (typical values)

I [mA]

480

460

440

Device Current [mA], typical

R3 [Ω]

1500

1350

1200

1050

420

400

380

360

340

470

430

390

350

Test conditions: V+=24 V, T_MB=30 °C, Z_S=Z_L=75 Ω

1050

1100

1150

1200

1250

1300

1350

1400

1450

1500

R3 [Ω]

Device Current versus Distortion Degradation (typical values)

I [mA]

480

460

440

420

CTB

400

CIN

380

360

340

10 11 12 13 14

CTB and CIN degradation [dB]

Test condition:

V+=24 V, T_MB=30 °C, Z_S=Z_L=75 Ω; V_O= 61 dBmV at 1218 MHz, 22 dB extrapolated tilt,

79 analog channels plus 111 digital channels (-6 dB offset)

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

3 of 8

www.qorvo.com

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

RFCM3328 Temperature Sensing Feature

The RFCM3328 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the output

transistor stage. Within the application circuit the NTC is part of a voltage divider. The output voltage of the voltage divider

(Vt) can be correlated to the module backside temperature.

Module Backside Temperature versus Vt (typical values)

Temperature [°C]

120

110

100

750

1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000

Vt [mV]

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

4 of 8

www.qorvo.com

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

Evaluation Board Schematic

FB1

Bead 60Ω

V+

5.1kΩ

220pF

R13

3.3kΩ

TGL34-33A

3kΩ

C13

4.7nF

MM3Z5V6T1

GND

1.5kΩ

C15

0.1pF

C17

DNI

4.7nF

RFXF0008

RFXF0006

RF OUT +

1.2pF

RFXF0009

RF IN +

GND

1kΩ

4.7nF

5.6Ω

RFCM3328

V+

GND

RF IN

RF OUT

1kΩ

GND

DNI

R10

DNI

4.7nF

RF IN -

DNI

C14

DNI

C10

C11

C19

DNI

C12

0.5pF

RF OUT -

0.5pF

1.2pF

DNI

R11

DNI

C16

0.1pF

C18

DNI

back

side

DNI

R12

DNI

Evaluation Board Assembly Drawing

Note: The ground plane of the RFCM3328 module should be soldered onto a board equipped with as many thermal vias as possible.

Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC

power (up to 11.3 Watts). In any case the module backside temperature should not exceed 110 °C.

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

5 of 8

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RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

Evaluation Board Bill of Materials (BOM)

Reference Des.

Value

n/a

Description

Printed Circuit Board

Manuf.

Qorvo

Part Number

n/a

PI844A

220 pF

4.7 nF

1.2 pF

DNI

Cap., 0402, 50V, NP0/C0G

Cap., 0402, ±10%, 50V, X7R

Cap., 0402, ±0.25pF, 50V, NP0/C0G

Cap., 0402, NP0/C0G⁽¹⁾

various

C2, C3, C6, C7, C8, C13

various

C4, C5

various

C9, C14, C17, C18, C19

various

C10, C11, C12

0.5 pF

0.1 pF

5.1 kΩ

3 kΩ

Cap., 0402, ±0.1pF, 50V, NP0/C0G⁽¹⁾

Cap., 0402, ±0.05pF, 50V, NP0/C0G⁽¹⁾

Res., 0603, ±1%, TK100

various

C15, C16

various

Res., 0402, ±1%, TK100

various

1.5 kΩ

5.6 Ω

1 kΩ

Res., 0402, ±1%, TK100

various

Res., 0402, ±1%, TK200

various

R5, R6

Res., 0402, ±1%, TK100

various

R7, R8, R9, R10, R11, R12

DNI

Res., 0402, 0Ω⁽¹⁾

various

R13

FB1

3.3 kΩ

Res., 0402, ±1%, TK100

various

60 Ω @ 100 MHz Impedance Bead

Taiyo Yuden

Diotec

BK 1608HS600-T

TGL34-33A

MM3Z5V6T1G

RFXF0006

TGL34-33A

5.6 V

Transient Voltage Suppressor Diode

Zener Diode

Transformer

DUT

ON Semiconductor

Qorvo

RFXF0006

RFXF0008

RFXF0009

RFCM3328

Qorvo

RFXF0008

Qorvo

RFXF0009

Qorvo

RFCM3327

Note:

1. Optional to improve matching in application.

Pin Out

RF OUT +

RF IN +

GND

Top View

6 of 8

V+

GND

RF OUT -

RF IN -

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

www.qorvo.com

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

Package Outline and Branding Drawing

(Dimensions in millimeters)

9.000±0.100

3.700

Pin1

PIN 1 Indicator

2x 2.000

1.000

0.650

0.000

0.650

RFCM3328

YYWW

Trace Code

DATA CODE

(YEAR/WEEK)

2x 2.000

3.700

A= 0.600 x 0.600 mm

molding cap

substrate

Pin Names and Descriptions

Name

RF IN +

GND

Description

RF AMP Positive Input

2, 3, 6

Ground pins

RF IN -

RF OUT -

V+

RF AMP Negative Input

RF AMP Negative Output

Supply Voltage, +24V

NTC Output for Temperature Sensing

RF AMP Positive Output

RF OUT +

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

7 of 8

www.qorvo.com

RFCM3328

45-1218 MHz GaAs/GaN Power Doubler Module

Handling Precautions

Parameter

Rating

Standard

ESDꢀ–ꢀHuman Body Model (HBM)

Class 1A

ESDAꢁ/ꢁJEDEC JS-001-2012

JEDEC JESD22-C101F

IPC/JEDEC J-STD-020

Caution!

ESD-Sensitive Device

ESDꢀ–ꢀCharged Device Model (CDM) Class C1

MSLꢀ–ꢀMoisture Sensitivity Level

Level 3

Solderability

Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.

Solder profiles available upon request.

Contact plating: NiPdAu

RoHS Compliance

This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and

Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

 Lead Free

 Halogen Free (Chlorine, Bromine)

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations:

Web: www.qorvo.com

Tel: 1-844-890-8163

Email: customer.support@qorvo.com

Important Notice

The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained

herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained

herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for

Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any

patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by

such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS

DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS

WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR

OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in

medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe

personal injury or death.

Data Sheet Rev.B, June 28, 2016 | Subject to change without notice

8 of 8

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RFCM3328SQ [QORVO]

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