T2G4005528-FSEVB1 [QORVO]
55W, 28V DC â 3.5 GHz, GaN RF Power Transistor;
| 型号： | T2G4005528-FSEVB1 |
| 厂家： | 
Qorvo |
| 描述： | 55W, 28V DC â 3.5 GHz, GaN RF Power Transistor |
| 文件： | 总13页 (文件大小：1108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
Functional Block Diagram
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 64 W at 3.3 GHz
• Linear Gain: 16 dB at 3.3 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
General Description
Pin Configuration
The TriQuint T2G4005528-FS is a 55 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 production process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization
can potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Pin No.
1
Label
VD / RF OUT
VG / RF IN
Source
2
Flange
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part ECCN
Description
Packaged part
Flangeless
T2G4005528-FS EAR99
T2G4005528-FS-
EAR99
3.0-3.5 GHz
Evaluation Board
EVB1
T2G405528-FS-
EAR99
1.0 – 1.4 GHz
Evaluation Board
EVB2
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 1 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings(1)
Recommended Operating Conditions
Parameter
Breakdown Voltage (BVDG
Value
100 V (Min.)(2)
40 V
Parameter
Drain Voltage (VD)
Value
28 V (Typ.)
200 mA (Typ.)
4.0 A (Typ.)
-2.95 V (Typ.)
225 °C (Max)
66 (Max)
)
Drain Gate Voltage (VDG
)
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
Gate Voltage Range (VG)
Drain Current (ID)
-7 to 0 V
20 A
Gate Current (IG)
-20 to 56 mA
90 W
Channel Temperature (TCH)
Power Dissipation, CW (PD)
Power Dissipation (PD)
Power Dissipation, Pulse (PD)
70 (Max)
RF Input Power, CW,
T = 25°C (PIN)
43 dBm
275 °C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
1. Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied.
2. Established at Vgs = -8V and Idq = 20mA
RF Characterization – Load Pull Performance at 3.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 200 mA
Symbol Parameter
Linear Gain
Min
Typical
16.8
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
66.0
W
DE3dB
PAE3dB
G3dB
61.0
%
58.4
%
Gain at 3 dB Compression
13.8
dB
Notes:
1. VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 200 mA
Symbol Parameter
Linear Gain
Min
Typical
16.7
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
64.5
W
DE3dB
PAE3dB
G3dB
59.2
%
56.7
%
Gain at 3 dB Compression
13.7
dB
Notes:
1. VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 2 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.3 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 300 mA
Symbol Parameter
Linear Gain
Min
Typical
16.0
Max
Units
dB
W
GLIN
14.0
55.0
50.0
45.0
11.0
-3.2
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
62.5
DE3dB
PAE3dB
G3dB
52.0
%
49.0
%
Gain at 3 dB Compression
Gate voltage
13.0
dB
V
Vg
-2.9
-2.5
Notes:
1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board
2. VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%
Gate Leakage
Test conditions unless otherwise noted: TA = 25 °C, VGS = -5 V, VDS = 28V
Symbol Parameter
IG-leak
Min
Typical
Max
4
Units
mA
Leakage Gate Current
RF Characterization – Mismatched Ruggedness at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 200 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. VDS = 28 V, IDQ = 200 mA, CW at P1dB
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 3 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC)
Channel Temperature (TCH)
Test Conditions
Value
2.1
Units
ºC/W
°C
DC at 85 °C Case
225
Notes:
Thermal resistance measured to bottom of package
Median Lifetime
Maximum Channel Temperature
TBASE = 85°C, PD = 70 W
Max. Channel Temperature vs. Pulse Width
240.0
220.0
200.0
180.0
160.0
140.0
120.0
100.0
5% Duty Cycle
10% Duty Cycle
25% Duty Cycle
50% Duty Cycle
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
Pulse Width (sec)
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 4 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
(1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 5 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
T2G4005528-FS Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 28V, Idq = 200 mA
18
17
16
15
14
13
12
11
10
80
70
60
50
40
30
20
10
0
ZS = 3.24 - j5.19 Ω
ZL = 4.01 - j1.35 Ω
Gain
DrEff.
PAE
32
34
36
38
40
42
44
46
48
50
Pout [dBm]
T2G4005528-FS Gain DrEff. and PAE vs. Pout
3500 MHz, 100 usec 20%, Vds = 28V, Idq = 200 mA
18
17
16
15
14
13
12
11
10
80
70
60
50
40
30
20
10
0
ZS = 6.09 - j5.43 Ω
ZL = 2.63 - j2.67 Ω
Gain
DrEff.
PAE
32
34
36
38
40
42
44
46
48
50
Pout [dBm]
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 6 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 300 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 7 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 300 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 28 V
Slowly increase VG until quiescent ID is 200 mA.
Apply RF signal
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Turn off VG
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 8 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.025” thick Rogers RO3210, ɛr = 10.2. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
C1, C7
Value
47 pF
Qty Manufacturer
Part Number
100A470JW
2
2
2
2
2
2
2
1
1
ATC
C2, C8
82 pF
ATC
100B820JW
C3, C9
2200 pF
22000 pF
1 uF
Vitramon
Vitramon
Allied
VJ1206Y222KRA
48C4641
C4, C10
C5, C11
C6, C12
L1, L2
213-0366
470 uF
12.5 nH
2.4 Ohm
2400 pF
Illinois Cap
Coilcraft
477KXM035M
A04T_JL
R1
Vishay Dale
Dielectric Labs
CRCW25122R40JNEG
C08BL242X-5UN-X0B
C13
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 9 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Pin Layout
Note:
The T2G4005528-FS will be marked with the “5528FS2” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin
Symbol
Description
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
1
VD / RF OUT
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
2
VG / RF IN
Flange
3
Source connected to ground; see EVB Layout on page 9 as an example.
Notes:
Thermal resistance measured to bottom of package
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 10 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in millimeters.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 11 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 1A
Value:
Test:
Standard:
Passes ≥ 250 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
MSL Rating
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 12 of 13 -
© 2014 TriQuint
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet: Rev B 06-12-14
Disclaimer: Subject to change without notice
- 13 of 13 -
© 2014 TriQuint
www.triquint.com
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