T2G6000528-Q3-EVB6 [TRIQUINT]
10W, 28V DC 6 GHz, GaN RF Power Transistor;
| 型号： | T2G6000528-Q3-EVB6 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 10W, 28V DC 6 GHz, GaN RF Power Transistor |
| 文件： | 总13页 (文件大小：985K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
Functional Block Diagram
• Frequency: DC to 6 GHz
• Output Power (P3dB): 10 W at 3.3 GHz
• Linear Gain: >17 dB at 3.3 GHz
• Operating Voltage: 28 V
1
• Low thermal resistance package
2
General Description
Pin Configuration
The TriQuint T2G6000528-Q3 is a 10W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 production process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Pin No.
1
Label
VD / RF OUT
VG / RF IN
Source
2
Flange
Ordering Information
Part ECCN
Description
Packaged part
Flangeless
Lead-free and ROHS compliant
T2G6000528-Q3 EAR99
Evaluation boards are available upon request.
T2G6000528-Q3-
EAR99
3.0-3.5 GHz
Evaluation Board
EVB3
T2G6000528-Q3-
EAR99
3.8-4.2 GHz
Evaluation Board
EVB5
T2G6000528-Q3-
EAR99
5.8 GHz
Evaluation Board
EVB6
T2G6000528-Q3-
EAR99
1.9 – 2.7 GHz
Evaluation Board
EVB1
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 1 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Breakdown Voltage (BVDG
Value
100 V (Min.)
Parameter
Drain Voltage (VD)
Value
28 V (Typ.)
)
Drain Gate Voltage (VDG
)
40 V
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
50 mA (Typ.)
650 mA (Typ.)
-3.0 V (Typ.)
225 °C (Max)
11 W (Max)
12.5 W (Max)
Gate Voltage Range (VG)
Drain Current (ID)
-10 to 0 V
2.5 A
Gate Current (IG)
-2.5 to 7 mA
15 W
Channel Temperature (TCH)
Power Dissipation, CW (PD)
Power Dissipation (PD)
Power Dissipation, Pulse (PD)
RF Input Power, CW,
T = 25°C (PIN)
34 dBm
275 °C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 3.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA
Symbol Parameter
Linear Gain
Min
Typical
18.5
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
9.2
W
DE3dB
PAE3dB
G3dB
57.5
%
55.9
%
Gain at 3 dB Compression
15.5
dB
Notes:
1. VDS = 28 V, IDQ = 50 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 6.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA
Symbol Parameter
Linear Gain
Min
Typical
15.0
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
9.3
W
DE3dB
PAE3dB
G3dB
63.0
%
59.0
%
Gain at 3 dB Compression
12.0
dB
Notes:
1. VDS = 28 V, IDQ = 50 mA; Pulse: 100µs, 20%
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 2 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.3 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA
Symbol Parameter
Linear Gain
Min
15.5
8.9
Typical
17.4
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
9.7
W
DE3dB
PAE3dB
G3dB
50.0
45.0
12.5
53.0
%
49.7
%
Gain at 3 dB Compression
14.4
dB
Notes:
1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board
2. VDS = 28 V, IDQ = 50 mA; Pulse: 100µs, 20%
RF Characterization – Narrow Band Performance at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. VDS = 28 V, IDQ = 50 mA, CW at P1dB
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 3 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Test Conditions
Value
12.4
Units
ºC/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Notes:
DC at 85 °C Case
225
Thermal resistance measured to bottom of package, CW.
Median Lifetime
Maximum Channel Temperature
TBASE = 85°C, PD = 12.5 W
Max. Channel Temperature vs. Pulse Width
260.0
240.0
220.0
200.0
180.0
160.0
140.0
120.0
5% Duty Cycle
10% Duty Cycle
25% Duty Cycle
50% Duty Cycle
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (sec)
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 4 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 50 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 5 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
24
23
22
21
20
19
18
17
16
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
80
70
60
50
40
30
20
10
0
ZS
= 3.21 + j6.81
Ω
ZL = 22.54 + j6.93
Ω
Gain
DrEff.
PAE
Gain
DrEff.
PAE
ZS
=
9.14 + j14.83 Ω
Ω
ZL = 29.07 + j5.48
33
34
35
36
37
38
39
33
34
35
36
37
38
39
40
Pout [dBm]
Pout [dBm]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
20
19
18
17
16
15
14
13
12
80
70
60
50
40
30
20
10
0
18
17
16
15
14
13
12
11
10
80
70
60
50
40
30
20
10
0
ZS
= 6.35 - j10.23 Ω
Ω
= 4.86 - j1.97
ZS
ZL = 19.81 + j11.00 Ω
ZL = 17.38 + j9.39
Ω
Gain
DrEff.
PAE
Gain
DrEff.
PAE
31 32 33 34 35 36 37 38 39 40 41
31 32 33 34 35 36 37 38 39 40 41
Pout [dBm]
Pout [dBm]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
18
80
18
80
17
16
15
14
13
12
11
10
Ω
70
60
50
40
30
20
10
0
17
16
15
14
13
12
11
10
Ω
70
60
50
40
30
20
10
0
ZS
=
9.03 - j11.85
ZS = 11.46 - j17.67
ZL = 13.23 - j3.01
ZL = 10.57 + j2.84
Ω
Ω
Gain
DrEff.
PAE
Gain
DrEff.
PAE
31 32 33 34 35 36 37 38 39 40 41
Pout [dBm]
31 32 33 34 35 36 37 38 39 40 41
Pout [dBm]
Datasheet: Rev C 11-14-14
© 2013 TriQuint
Disclaimer: Subject to change without notice
- 6 of 13 -
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 50 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 7 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 50 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
1. VG set to -5 V.
2. VD set to 28 V.
3. Adjust VG more positive until quiescent ID is 50 mA.
4. Apply RF signal.
1. Turn off RF signal.
2. Turn off VD and wait 1 second to allow drain
capacitor dissipation.
3. Turn off VG.
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 8 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.025” thick Rogers RO3210, ɛr = 10.2. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
C1, C7
Value
22 uF
Qty Manufacturer
Part Number
T491D
2
2
2
2
2
2
2
1
1
2
Sprague
C2, C8
1 uF
Kemet
1812C105KAT2A
C1206C104KRAC7800
C1206C103KRAC7800
100B101
C3, C9
0.1 uF
Kemet
C4, C10
C5, C11
C6, C12
C13, C14
R1
0.01 uF
100 pF
2400 pF
27 pF
Kemet
ATC
DLI
C08BL242C5UNC0B
600L270JT200
ATC
1000 ohm
12 ohm
9.85 nH
Vishay Dale
Vishay Dale
Coilcraft
CRCW0805100F100
RM73B2B120J
16069JLB
R2
L1, L2
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 9 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Pin Layout
Note:
The T2G6000528-Q3 will be marked with the “05282” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, and the “MXXX” is the production lot number.
Pin Description
Pin
Symbol
Description
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
1
VD / RF OUT
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
2
VG / RF IN
Flange
3
Source connected to ground; see EVB Layout on page 9 as an example.
Notes:
Thermal resistance measured to bottom of package
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 10 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in millimeters. Unless specified otherwise, tolerances are 0.127.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 11 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 1A
Value:
Test:
Standard:
Passes ≥ 250 V to < 500 V max.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
MSL Rating
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 12 of 13 -
© 2013 TriQuint
www.triquint.com
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev C 11-14-14
Disclaimer: Subject to change without notice
- 13 of 13 -
© 2013 TriQuint
www.triquint.com
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