T2G6001528-Q3-EVB1 [QORVO]
18W, 28V, DC â 6 GHz, GaN RF Power Transistor;
| 型号： | T2G6001528-Q3-EVB1 |
| 厂家： | 
Qorvo |
| 描述： | 18W, 28V, DC â 6 GHz, GaN RF Power Transistor |
| 文件： | 总17页 (文件大小：1675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
Functional Block Diagram
• Frequency: DC to 6 GHz
• Output Power (P3dB): 19 W at 5.2 GHz
• Linear Gain: >9 dB at 5.2 GHz
• Operating Voltage: 28 V
1
• Low thermal resistance package
2
General Description
Pin Configuration
The TriQuint T2G6001528-Q3 is an 18W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6.0 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Pin No.
1
Label
VD / RF OUT
VG / RF IN
Source
2
Flange
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part ECCN
Description
Packaged part
Flangeless
T2G6001528-Q3 EAR99
T2G6001528-Q3-
EAR99
5.0 – 6.0 GHz
Evaluation Board
EVB1
T2G6001528-Q3-
EAR99
1.8 – 2.6 GHz
Evaluation Board
EVB2
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 1 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions(1)
Parameter
Value
Parameter
Value
Breakdown Voltage (BVDG
Gate Voltage Range (VG)
Drain Current (ID)
)
100 V min.
-7 to 0 V
5 A
Drain Voltage (VD)
32 V (Typ.)
50 mA (Typ.)
1.4 A (Typ.)
-2.9 V (Typ.)
225 °C (Max)
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
Gate Current (IG)
-5 to 14 mA
28 W
Power Dissipation (PD)
Channel Temperature (TCH)
RF Input Power, CW,
T = 25°C (PIN)
36 dBm
Power Dissipation, CW (PD)2
Power Dissipation, Pulse (PD)3
20.9 W (Max)
22.5 W (Max)
Channel Temperature (TCH)
275 °C
320 °C
Mounting Temperature (30
seconds)
1 Electrical specifications are measured at specified test
conditions.
Storage Temperature
-40 to 150 °C
Specifications are not guaranteed over all recommended operating
conditions.
2 Package at 85 °C
3 100uS Pulse Width, 20 % Duty Cycle, package at 85 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA, Pulse: 100uS, 20%
Symbol Parameter
Linear Gain
Min
Typical
16.5
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
19.6
W
DE3dB
PAE3dB
G3dB
69.6
%
66.4
%
Gain at 3 dB Compression
13.5
dB
RF Characterization – Load Pull Performance at 6.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA, Pulse: 100uS, 20%
Symbol Parameter
Linear Gain
Min
Typical
11.3
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
19.0
W
DE3dB
PAE3dB
G3dB
66.0
%
56.2
%
Gain at 3 dB Compression
8.3
dB
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 2 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
RF Characterization – Performance at 5.2 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA, Pulse: 100uS, 20%
Symbol Parameter
Linear Gain
Min
Typical
10.5
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
17.3
W
DE3dB
G3dB
48.0
%
7.5
dB
Notes:
1. Performance at 5.2 GHz in the 5.0 to 6.0 GHz Evaluation Board
RF Characterization – Mismatch Ruggedness at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. VDS = 28 V, IDQ = 50 mA, CW at P1dB
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 3 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Thermal and Reliability Information – Pulsed
Parameter
Test Conditions
Value
4.6
Units
°C/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Notes:
Pdiss = 22.5W, Pulse width = 100 uS,
Duty cycle = 5%, Tbase = 85 °C
188
4.9 E7
4.7
Hrs
°C/W
°C
Pdiss = 22.5W, Pulse width = 100 uS,
Duty cycle = 10%, Tbase = 85 °C
191
3.6 E7
5.0
Hrs
°C/W
°C
Pdiss = 22.5W, Pulse width = 100 uS,
Duty cycle = 20%, Tbase = 85 °C
198
1.9 E7
5.6
Hrs
°C/W
°C
Pdiss = 22.5W, Pulse width = 100 uS,
Duty cycle = 50%, Tbase = 85 °C
212
5.5 E6
Hrs
Thermal resistance measured to bottom of package, Pulsed.
Thermal and Reliability Information – CW
Parameter
Test Conditions
Value
6.2
Units
°C/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Notes:
Pdiss = 15W, Tbase = 85 °C
Pdiss = 17.5W, Tbase = 85 °C
Pdiss = 20W, Tbase = 85 °C
Pdiss = 22.5W, Tbase = 85 °C
178
1.3 E8
6.5
Hrs
°C/W
°C
198
1.9 E7
6.7
Hrs
°C/W
°C
219
3.0 E6
7.0
Hrs
°C/W
°C
243
4.4 E5
Hrs
Thermal resistance measured to bottom of package, CW.
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 4 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Median Lifetime
Maximum Channel Temperature
TBASE = 85°C, PD = 22.5 W
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 5 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. The impedances shown are those presented to the device at load pull reference planes. See page 14.
2. Test Conditions: VDS = 28 V, IDQ = 50 mA
3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
4. NaN indicates the value was not set during load pull.
5. Zo is characteristic impedance of load pull fixtures.
3GHz, Load-pull
Max Power is 43dBm
•
Zs(fo) = 4.14-2.4i
Zs(2fo) = NaN
Ω
at Z = 12.811-0.819i
Ω
Ω
= 0.1243-0.0314i
Max Gain is 13.7dB
Zs(3fo) = NaN
Ω
Zl(2fo) = NaN
Γ
•
Ω
at Z = 8.871+5.572i
= 0.0252+0.2879i
Zl(3fo) = NaN
Ω
Ω
Γ
Max PAE is 72.7%
at Z = 8.441+7.062i
•
Ω
= 0.0542+0.3622i
Γ
71.4
69.4
67.4
13.3
63.4
59.4
12.8
43
42.8
42.6
12.3
42.4
11.8
Power
Gain
PAE
Zo = 10
Ω
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 6 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. The impedances shown are those presented to the device at load pull reference planes. See page 14.
2. Test Conditions: VDS = 28 V, IDQ = 50 mA
3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
4. NaN indicates the value was not set during load pull.
5. Zo is characteristic impedance of load pull fixtures.
4GHz, Load-pull
Max Power is 43dBm
at Z = 13.332-5.503i
•
Zs(fo) = 6.84-7.48i
Zs(2fo) = NaN
Ω
Ω
Ω
= 0.188-0.1915i
Max Gain is 11.8dB
at Z = 6.973-0.441i
Γ
Zs(3fo) = NaN
Ω
Zl(2fo) = NaN
•
Ω
Ω
Zl(3fo) = NaN
Ω
= -0.1776-0.0306i
Max PAE is 63.8%
Γ
•
at Z = 8.632+2.102i
= -0.06+0.1196i
Ω
Γ
63.3
11.7
61.3
59.3
11.2
57.3
42.9
55.3
10.7
10.2
42.7
42.5
Power
Gain
PAE
Zo = 10
Ω
Datasheet: Rev C 05-13-15
© 2015 TriQuint
Disclaimer: Subject to change without notice
- 7 of 17 -
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. The impedances shown are those presented to the device at load pull reference planes. See page 14.
2. Test Conditions: VDS = 28 V, IDQ = 50 mA
3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
4. NaN indicates the value was not set during load pull.
5. Zo is characteristic impedance of load pull fixtures.
5GHz, Load-pull
Max Power is 43.6dBm
at Z = 18.018-14.582i
•
Zs(fo) = 6.83-11.52i
Zs(2fo) = NaN
Ω
Ω
Ω
= 0.4383-0.2923i
Max Gain is 11.4dB
at Z = 6.166-3.677i
Γ
Zs(3fo) = NaN
Ω
Zl(2fo) = NaN
•
Ω
Ω
Zl(3fo) = NaN
Ω
= -0.1763-0.2675i
Max PAE is 66.4%
Γ
•
at Z = 8.088-10.399i
= 0.169-0.4778i
Ω
Γ
10.3
9.81
9.31
10.8
11.3
54.6
52.6
62.6
64.6
43.5
43.3
43.1
42.9
Power
Gain
PAE
Zo = 10
Ω
Datasheet: Rev C 05-13-15
© 2015 TriQuint
Disclaimer: Subject to change without notice
- 8 of 17 -
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. The impedances shown are those presented to the device at load pull reference planes. See page 14.
2. Test Conditions: VDS = 28 V, IDQ = 50 mA
3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
4. NaN indicates the value was not set during load pull.
5. Zo is characteristic impedance of load pull fixtures.
6GHz, Load-pull
Max Power is 43.4dBm
at Z = 21.664-18.153i
•
Zs(fo) = 13.51-15.66i
Zs(2fo) = NaN
Ω
Ω
Ω
= 0.5246-0.2725i
Max Gain is 8.4dB
at Z = 9.571-13.047i
Γ
Zs(3fo) = NaN
Ω
Zl(2fo) = NaN
•
Ω
Ω
Zl(3fo) = NaN
Ω
= 0.2925-0.4716i
Max PAE is 59.7%
Γ
•
at Z = 7.187-13.788i
= 0.292-0.568i
Ω
Γ
7.09
7.59
8.09
48
50
43.3
43.1
54
42.9
42.5
56
42.1
58
Power
Gain
PAE
Zo = 10
Ω
Datasheet: Rev C 05-13-15
© 2015 TriQuint
Disclaimer: Subject to change without notice
- 9 of 17 -
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference planes. See page 14.
T2G6001528-Q3 Gain DrEff. and PAE vs. Pout
T2G6001528-Q3 Gain DrEff. and PAE vs. Pout
1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
24
23
22
21
20
19
18
17
16
80
70
60
50
40
30
20
10
0
22
21
20
19
18
17
16
15
14
80
70
60
50
40
30
20
10
0
ZS
= 2.46 + j3.40
Ω
ZL = 14.14 + j0.70
Ω
ZS
=
4.57 + j8.99
Ω
Ω
ZL = 11.37 - j2.11
Gain
DrEff.
PAE
Gain
DrEff.
PAE
33 34 35 36 37 38 39 40 41 42 43
33 34 35 36 37 38 39 40 41 42 43
Pout [dBm]
Pout [dBm]
T2G6001528-Q3 Gain DrEff. and PAE vs. Pout
T2G6001528-Q3 Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
18
80
70
60
50
40
30
20
10
0
15
80
70
60
50
40
30
20
10
0
17
16
15
14
13
12
11
10
14
13
12
11
10
9
ZS
ZL
=
=
6.84 - j7.48
9.86 - j2.97
Ω
Ω
ZS
= 4.14 - j2.40
Ω
ZL = 12.51 + j1.04
Ω
Gain
DrEff.
PAE
Gain
DrEff.
PAE
8
7
33 34 35 36 37 38 39 40 41 42 43
33 34 35 36 37 38 39 40 41 42 43
Pout [dBm]
Pout [dBm]
T2G6001528-Q3 Gain DrEff. and PAE vs. Pout
T2G6001528-Q3 Gain DrEff. and PAE vs. Pout
5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
15
80
70
60
50
40
30
20
10
0
13
80
70
60
50
40
30
20
10
0
14
13
12
11
10
9
12
11
10
9
ZS
= 6.83 - j11.52 Ω
ZS = 13.51 - j15.66 Ω
ZL = 12.50 - j14.22 Ω
ZL = 13.34 - j6.40
Ω
8
Gain
DrEff.
PAE
Gain
DrEff.
PAE
7
8
6
7
5
33 34 35 36 37 38 39 40 41 42 43
33 34 35 36 37 38 39 40 41 42 43
Pout [dBm]
Pout [dBm]
Datasheet: Rev C 05-13-15
© 2015 TriQuint
Disclaimer: Subject to change without notice
- 10 of 17 -
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 5.0 GHz to 6.0 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 50 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 11 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 50 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 28 V
Slowly increase VG until quiescent ID is 50 mA.
Apply RF signal
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Turn off VG
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 12 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO3203, ɛr = 3.02. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value
100 pF
2400 pF
100 pF
0.01 uF
0.1 uF
Qty Manufacturer
Part Number
100A101JW500XC
C08BL242X-5UN-XOB
100B101GT500X
C1206C103K1RACTU
C1206C104K1RACTU
1812C105KAT2A
226K035AT
C1, C14
C2, C8
C3, C9
C4, C10
C5, C11
C6, C12
C7, C13
L1
2
1
2
2
2
2
2
1
1
1
ATC
Dielectric Labs
ATC
Kemet
Kemet
1.0 uF
AVX
22 uF
Sprague
Coilcraft
Coilcraft
Vishay
5.4 nH
0906-5JL
L2
9.85 nH
12.1Ohms
1606-9JLB
R1
CRC120612R1FKEA
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 13 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Pin Layout
Note:
The T2G6001528-Q3 will be marked with the “15282” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, and the “MXXX” is the production lot number.
Pin Description
Pin
Symbol
Description
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
1
VD / RF OUT
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
2
VG / RF IN
Flange
3
Source connected to ground; see EVB Layout on page 9 as an example.
Notes:
Thermal resistance measured to bottom of package
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 14 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in millimeters. Unless specified otherwise, tolerances are 0.127.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 15 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 1A
Value:
Test:
Standard:
Passes ≥ 250 V to < 500 V max.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
MSL Rating
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 16 of 17 -
© 2015 TriQuint
www.triquint.com
T2G6001528-Q3
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev C 05-13-15
Disclaimer: Subject to change without notice
- 17 of 17 -
© 2015 TriQuint
www.triquint.com
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