TGA2227-SMTR7 [QORVO]
2 â 22 GHz GaN Low Noise Amplifier;
| 型号： | TGA2227-SMTR7 |
| 厂家： | 
Qorvo |
| 描述： | 2 â 22 GHz GaN Low Noise Amplifier |
| 文件： | 总17页 (文件大小：900K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Product Description
The TGA2227–SM is a packaged, low noise amplifier
offering high electrical performance, along with exceptional
robustness to incident power. Fabricated on Qorvo’s
0.15ꢀum GaN on SiC production process (QGaN15), the
TGA2227–SM operates over 2ꢀ–ꢀ22ꢀGHz and delivers
>15ꢀdB small signal gain and >+22ꢀdBm P1dB while
supporting 2ꢀdB mid-band Noise Figure.
Robustness to incident power levels of up to 10ꢀWatts is an
industry first for a low noise MMIC amplifier and cannot be
achieved in competing technologies. This supports
potential system cost savings and board area reduction by
removal of receive protection circuitry. This would also
improve system-level noise figure.
The TGA2227–SM is an ideal choice for radar and EW
applications as well as high power communication systems
and test and measurement across commercial and military
markets.
Functional Block Diagram
Product Features
• List Frequency Range: 2ꢀ–ꢀ22ꢀGHz
• High Input Power Survivability: 40ꢀdBm
• Noise Figure: 2.0ꢀdB (mid–band)
• Gainꢀ>ꢀ15ꢀdB
• IM3: −36.5ꢀdBc (PINꢀ/tone =−4ꢀdBm, Δf=10ꢀMHz)
• P1dB >ꢀ+22ꢀdBm
• Bias: VD = +8ꢀV, IDQ = 125ꢀmA
• Operating Drain Voltage Range: +5 to +15ꢀV
• Package Dimensions: 4.0ꢀmmꢀx 4.0ꢀmm x 1.7ꢀmm
Applications
Ordering Information
• Commercial & Military Communications
• Commercial & Military Radar
• Electronic Warfare
• Instrumentation
• LNA, Driver, Gain Block, General Amplification
Part No.
Description
TGA2227-SM
GaN LNA, Waffle Pack, Qty 25
Tape & Reel, 7 ”, Qty 500
TGA2227-SMꢀEvaluation Board, Qty 1
TGA2227-SMTR7
TGA2227-SMEVB02
- 1 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Recommended Operating Conditions
Parameter
Drain Voltage (VD), Low Pdiss Bias
Min
+5
–
Typ
+8
Max
+20
Units
V
Drain Voltage (VD), Power Bias
+15
125
−2.5
+2
–
–
V
mA
V
Quiescent Drain Current (IDQ
Gate Voltage (VG)
)
–
–
–
Cascode Voltage (VC), Low Pdiss Bias
Cascode Voltage (VC), Power Bias
Operating Temperature Range
–
–
V
–
+4
–
V
−40
–
+85
°C
Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all
recommended operating conditions.
- 2 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Electrical Specificationsꢀ–ꢀLow Pdiss Bias
Test conditions unless otherwise noted: TBASEꢀ=ꢀ+25ꢀ°C, VDꢀ=ꢀ+8ꢀV, VCꢀ=ꢀ+2ꢀV
Data de-embedded to device reference planes
Parameter
Conditionsꢀ
Min
2
Typ
–
Max
22
–
Units
GHz
dB
Operational Frequency Range
Small Signal Gain
Small Signal Gain
Small Signal Gain
Small Signal Gain
Noise Figure
–
2 GHz to 20 GHz
2 GHz
15.7
15.7
15.7
15.7
2.6
15
19
19
19
–
dB
13.5
2 GHz to 19 GHz
19 GHz to 20 GHz
2 GHz to 20 GHz
2 GHz to 5 GHz
5 GHz to 10 GHz
10 GHz to 20 GHz
dB
12.8
dB
–
dB
-
4.2
2.7
5.0
–
Noise Figure
2.6
dB
–
Noise Figure
2.6
dB
–
Noise Figure
2.6
dB
–
Input Return Loss
Output Return Loss
PSAT
10
dB
–
–
12
dB
–
–
+26.3
+23.0
−36.5
−0.024
0.013
dBm
dBm
dBc
dBꢀ/ꢀ°C
dBꢀ/ꢀ°C
mA
–
–
–
P1dB
–
IM3
PINꢀ/ꢀtone = −4ꢀdBm, Δf = 10ꢀMHz
–
–
S21 Temperature Coefficient
NF Temperature Coefficient
Gate Leakage Current
–
–
-1.28
0
VD = 10 V, VG = - 3.7V, VC = 2V
Electrical Specificationsꢀ–ꢀPower Bias
Test conditions unless otherwise noted: TBASEꢀ=ꢀ+25ꢀ°C, VDꢀ=ꢀ+15ꢀV, VCꢀ=ꢀ+4ꢀV
Data de-embedded to device reference planes
Parameter
Conditionsꢀ
Min
2
Typ
–
Max
22
Units
GHz
dB
Operational Frequency Range
Small Signal Gain
Noise Figure
–
–
15.7
2.7
–
–
dB
–
–
Input Return Loss
Output Return Loss
PSAT
10
dB
–
–
12
dB
–
–
PIN =ꢀ+14ꢀdBm
27.9
25.4
-41.8
−0.025
0.012
dBm
dBm
dBc
–
–
–
P1dB
–
IM3
PINꢀ/ꢀtone = −4ꢀdBm, Δf = 10ꢀMHz
–
–
S21 Temperature Coefficient
NF Temperature Coefficient
Gate Leakage Current
dBꢀ/ꢀ°C
dBꢀ/ꢀ°C
mA
–
–
-1.28
0
VD = 10 V, VG = - 3.7V, VC = 2V
- 3 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Absolute Maximum Ratings
Parameter
Rangeꢀ/ꢀValue
+29.5
Units
V
Drain Voltage (VD)
Cascode Voltage (VC)
Drain Current (ID)
VCꢀ<ꢀVD and VCꢀ<ꢀ+9
300
V
mA
V
Gate Voltage (VG)
Gate Current (IG)
−5 to 0
See graph
+40ꢀ
–
RF Input Power (25ꢀ°C, 50ꢀΩ)
dBm
Mounting Temperature
(30 seconds maximum)
Storage Temperature
+260
°C
°C
−55 to +150
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may
reduce device reliability.
Thermal and Reliability Information
Parameter
Values
Units
Conditions
Small Signal, Thermal Resistance (θJC) (1,2,3)
4.62
°C/W
TBASE = +85ꢀ°C, VD = +8ꢀV, VC = +2.0ꢀV
VG = −2.4ꢀV, ID_DRIVE = 125ꢀmA
PIN = −10ꢀdBm, POUT = +6ꢀdBm, PDISS = 1.00ꢀW
Channel Temperature (TCH)
89.62
6.07
°C
°C/W
°C
Small Signal, Thermal Resistance (θJC) (1,2,3)
Channel Temperature (TCH)
TBASE = 85ꢀ°C, VD = +15ꢀV, VC = +4.0ꢀV
VG = −2.4ꢀV, ID_DRIVE = 125ꢀmA
PIN = −10ꢀdBm, POUT = +6ꢀdBm, PDISS = 1.88ꢀW
96.39
6.32
Under Drive, Thermal Resistance (θJC) (1,2,3)
Channel Temperature (TCH)
°C/W
°C
TBASE = 85ꢀ°C, VD = +15ꢀV, VC = +4.0ꢀV
VG = −2.4ꢀV, ID_DRIVE = 197ꢀmA
PIN = +16ꢀdBm, POUT = +28.4ꢀdBm, PDISS = 2.30ꢀW
99.56
Notes:
1. Thermal resistance is measured to package backside
2. Base or ambient temperature is 85 °C
3. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
- 4 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Gain vs. Freq. vs. Temp.
Gain vs. Freq. vs. Temp.
25
25
20
15
10
5
VD = 8 V, VC = 2 V, IDQ = 125 mA
VD = 15 V, VC = 4 V, IDQ = 125 mA
20
15
10
5
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
0
0
-5
-5
0
5
10
15
20
25
25
25
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
Input Return Loss vs. Freq. vs. Temp.
0
0
VD = 15 V, VC = 4 V, IDQ = 125 mA
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
VD = 8 V, VC = 2 V, IDQ = 125 mA
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
0
5
10
15
20
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
Output Return Loss vs. Freq. vs. Temp.
0
-5
0
-5
- 40 C
- 40 C
+25 C
+85 C
VD = 8 V, VC = 2 V, IDQ = 125 mA
VD = 15 V, VC = 4 V, IDQ = 125 mA
+25 C
+85 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0
5
10
15
20
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
- 5 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Gain vs. Freq vs. Drain Current
Gain vs Freq. vs. Drain Current
25
25
20
15
10
5
VD = 8 V, VC = 2 V, Temp = 25 °C
VD = 15 V, VC = 4 V, Temp = 25 °C
20
15
10
5
100 mA
125 mA
150 mA
100 mA
125 mA
150 mA
0
0
-5
-5
0
5
10
15
20
25
25
25
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Input Ret Loss vs. Freq. vs. Drain Current
Input Ret Loss vs. Freq vs. Drain Current
0
0
VD = 15 V, VC = 4 V, Temp = 25 °C
100 mA
125 mA
150 mA
100 mA
125 mA
150 mA
VD = 8 V, VC = 2 V, Temp = 25 °C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
0
5
10
15
20
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Output Ret Loss vs. Freq vs. Drain Current
Output Ret Loss vs. Freq vs. Drain Current
0
-5
0
-5
100 mA
100 mA
125 mA
150 mA
VD = 8 V, VC = 2 V, Temp = 25 °C
VD = 15 V, VC = 4 V, Temp = 25 °C
125 mA
150 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0
5
10
15
20
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
- 6 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀNoise Figure
Noise Figure vs. Freq. vs. Temperature
Noise Figure vs. Freq. vs. Temperature
8
8
7
6
5
4
3
2
1
0
VD = 8 V, VC = 2 V, IDQ = 125 mA
VD = 15 V, VC = 4 V, IDQ = 125 mA
7
-40 C
-40 C
+25 C
+85 C
6
5
4
3
2
1
0
+25 C
+85 C
0
0
0
5
10
15
20
25
25
25
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Freq. vs. Drain Current
Noise Figure vs. Freq. vs. Drain Current
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
VD = 8 V, VC = 2 V, Temp = 25 °C
VD = 15 V, VC = 4 V, Temp = 25 °C
100 mA
125 mA
150 mA
100 mA
125 mA
150 mA
5
10
15
20
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Gain vs. Freq. vs. VD/VC
IDQ = 125 mA, Temp. = 25 °C
Noise Figure vs. Freq. vs. VD/VC
20
8
IDQ = 125 mA, Temp = 25 °C
19
18
17
16
15
14
13
12
11
10
7
6
5
4
3
2
1
0
8V/2V
15V/4V
8V/2V
15V/4V
0
5
10
15
20
25
5
10
15
20
Frequency (GHz)
Frequency (GHz)
- 7 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Output Power vs. Freq. vs. Temp.
Output Power vs. Freq. vs. Temp.
32
32
31
30
29
28
27
26
25
24
23
22
21
20
VD = 8 V, Vc = 2 V, IDQ = 125 mA, PIN = 14 dBm
VD = 15 V, VC = 4 V, IDQ = 125 mA, PIN = 14 dBm
31
30
29
28
27
26
25
24
23
-40 deg C
-40 deg C
+25 deg C
+85 deg C
22
+25 deg C
21
+85 deg C
20
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Output Power vs. Freq. vs. Input Power
Output Power vs. Freq. vs. Input Power
34
32
30
28
26
24
22
20
18
16
14
12
10
8
34
32
30
28
26
24
22
20
18
16
14
12
10
8
VD = 8 V, Vc = 2 V, IDQ = 125 mA, T = 25 °C
VD = 15 V, Vc = 4 V, IDQ = 125 mA, T = 25 °C
-6 dBm
6 dBm
-2 dBm
10 dBm
2 dBm
-6 dBm
6 dBm
-2 dBm
10 dBm
2 dBm
6
6
4
2
4
2
14 dBm
14 dBm
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
VD = 8 V, VC = 2 V, IDQ = 125 mA, T = 25 °C
Output Power vs. Input Power vs. Freq.
VD = 15 V, VC = 4 V, IDQ = 125 mA, T = 25 °C
32
28
24
20
16
12
8
32
28
24
20
16
12
8
2 GHz
2 GHz
10 GHz
18 GHz
10 GHz
18 GHz
4
4
0
0
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
- 8 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀLarge Signal
Power Gain vs. Input Power vs. Freq.
VD = 8 V, VC = 2 V, IDQ = 125 mA, T = 25 °C
Power Gain vs. Input Power vs. Freq.
VD = 15 V, VC = 4 V, IDQ = 125 mA, T = 25 °C
19
19
18
17
16
15
14
13
12
11
10
9
18
17
16
15
14
13
12
2 GHz
2 GHz
10 GHz
18 GHz
11
10 GHz
10
18 GHz
9
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
VD = 8 V, VC = 2 V, IDQ = 125 mA, T = 25 °C
Drain Current vs. Input Power vs. Freq.
VD = 15 V, VC = 4 V, IDQ = 125 mA, T = 25 °C
240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
2 GHz
2 GHz
10 GHz
18 GHz
10 GHz
18 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
- 9 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀLinearity
IM3 vs. Frequency vs. Temperature
IM3 vs. Frequency vs. Temperature
0
0
-10
-20
-30
-40
-50
-60
VD = 8 V, VC = 2 V, IDQ = 125 mA,
Pin/Tone = -4 dBm, Df =10 MHz
VD = 15 V, VC = 4 V, IDQ = 125 mA,
Pin/Tone = -4 dBm, Df =10 MHz
-10
-20
-40 deg C
-40 deg C
+25 deg C
+85 deg C
+25 deg C
-30
+85 deg C
-40
-50
-60
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
IM3 vs. Input Power vs. Frequency
IM3 vs. Output Power vs. Frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
VD = 8 V, VC = 2 V, IDQ = 125 mA, Df =10 MHz,
Temp. = 25 °C
VD = 15 V, VC = 4 V, IDQ = 125 mA,
Df =10 MHz, Temp. = 25 °C
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
2 GHz
6 GHz
2 GHz
6 GHz
10 GHz
14 GHz
18 GHz
10 GHz
14 GHz
18 GHz
-12
-10
-8
-6
-4
-2
0
2
4
6
-12
-10
-8
-6
-4
-2
0
2
4
6
Input Power per Tone (dBm)
Input Power per Tone (dBm)
- 10 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Performance Plotsꢀ–ꢀLinearity
IM5 vs. Frequency vs. Temperature
IM5 vs. Frequency vs. Temperature
0
0
VD = 15 V, VC = 4 V, IDQ = 125 mA,
Pin/Tone = -4 dBm, Df =10 MHz
VD = 8 V, VC = 2 V, IDQ = 125 mA,
-10
-10
Pin/Tone = -4 dBm, Df =10 MHz
-20
-20
-30
-40
-50
-60
-70
-80
-90
-100
-40 deg C
-40 deg C
-30
+25 deg C
-40
+25 deg C
+85 deg C
+85 deg C
-50
-60
-70
-80
-90
-100
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
IM5 vs. Input Power vs. Frequency
IM5 vs. Output Power vs. Frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Temp. = 25 °C
VD = 15 V, VC = 4 V, IDQ = 125 mA,
Df =10 MHz, Temp. = 25 °C
2 GHz
6 GHz
2 GHz
10 GHz
14 GHz
18 GHz
6 GHz
10 GHz
14 GHz
18 GHz
VD = 8 V, VC = 2 V, IDQ = 125 mA, Df =10 MHz
-12
-10
-8
-6
-4
-2
0
2
4
6
-12
-10
-8
-6
-4
-2
0
2
4
6
Input Power per Tone (dBm)
Input Power per Tone (dBm)
- 11 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Application Circuit
VD
VS
VC
R2
C2
C5
R5
C1
R1
10 Ω 1 uF
R6 C6
1000 pF 10 Ω
1 uF 10 Ω
C4 R4
14 13 12 11
10 Ω 1000 pF
1000 pF 10 Ω
10
9
RF OUT
1
2
3
8
RF IN
4
5
6
7
C7
R7
1000 pF 10 Ω
C3 R3
VG
1 uF 10 Ω
Bias Up Procedure
Bias Down Procedure
1. Turn off RF signal
1. Set VG = −5.0ꢀV, VC = 0.0ꢀV, VD = 0.0ꢀV
2. Adjust VD to desired drain voltage
3. Adjust VC to desired voltage
4. Adjust VG until IDQ = 125ꢀmA
5. Turn on RF signal
2. Adjust VG to −5.0ꢀV
3. Adjust VC to 0.0ꢀV
4. Adjust VD to 0.0ꢀV
5. Adjust VG to 0.0ꢀV
- 12 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
EVB Part Number or Ref. Design Name
VD
GND VC GND
C5
C2
R1
C1
R2
C6
R4
R5
C4
R3
Mounting pad detail
R6
C7
C3
GND
VG
RF Layer is 0.008” thick Rogers Corp. RO4003C, r = 3.38. Metal layers are 0.5ꢀoz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5.
The trace pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land
pattern has been developed to accommodate lead tolerances. Since processes vary from company to company, careful
process development is recommended
Bill of Materials
Reference Des.
C1ꢀ–ꢀC3
Value
1ꢀuF, +50ꢀV, 5ꢀ%
Description
CAP X7R 1206
Manuf.
Various
Various
Various
Part Number
–
–
–
C4ꢀ–ꢀC7
1000ꢀpF, +50ꢀV, 10ꢀ% CAP X7R 0402
R1ꢀ–ꢀR6
10ꢀOhm, 5ꢀ%
RES 0402, SMD
- 13 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Pin Configuration and Description
11 12 13 14
10
9
1
8
2
3
7
6
5
4
Dimensions in inch. Package lead finish: Ni / Au plating with minimum gold thickness of 0.1 um
Part Marking: 2227: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID
Pin No.
1, 3, 8, 10
Label
GND
Description
RF Ground
2
RF Input
NC (or GND)
VG
RF input pad, DC blocked
No connection in package; grounding may improve performance
Gate voltage
4. 5. 6. 11
7
9
RF Output
VD
RF output pad, DC blocked
Drain voltage
12
13
14
VS
Drain voltage monitor
VC
Cascode voltage
- 14 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Tape and Reel Information
Standard T/R size = 500 pieces on a 7” reel.
Distance Between
Centerline (mm)
Carrier Tape Cover
(mm)
Carrier (mm)
Material
Vendor
Cavity (mm)
Length
direction
(P2)
Width
Direction
(F)
Length Width
Depth
(K0)
Pitch
(P1)
Width
(W)
Width
(W)
Vendor P/N
(A0)
(B0)
Advantek BCA014
4.3
4.3
2.1
8.0
2.00
5.50
12.0
9.20
- 15 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Assembly Notes
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
Recommended Soldering Temperature Profile
- 16 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
TGA2227-SM
2ꢀ–ꢀ22ꢀGHz GaN Low Noise Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
Class 0B
ESDAꢁ/ꢁJEDEC JS-001-2012
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) C3
ESDAꢁ/ꢁJEDEC JS-002-2014
JEDEC standard IPC/JEDEC-J-
STD-020
Level 3
MSL–ꢀ260ꢁ°C Convection Reflow
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical
and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
- 17 of 17 -
Data Sheet Rev F, July 2020 | Subject to change without notice
www.qorvo.com
相关型号：
©2020 ICPDF网 联系我们和版权申明