TGA4548-SMEVB [QORVO]
17 â 20 GHz 10 W GaN Power Amplifier;
| 型号： | TGA4548-SMEVB |
| 厂家： | 
Qorvo |
| 描述： | 17 â 20 GHz 10 W GaN Power Amplifier |
| 文件： | 总17页 (文件大小：1034K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Product Overview
Qorvo’s TGA4548-SM is a high frequency, high power
MMIC amplifier fabricated on Qorvo’s production 0.15um
GaN on SiC process (QGaN15). The TGA4548-SM
operates from 17 – 20 GHz and typically provides > 10 W
saturated output power with power-added efficiency of 25%
and large-signal gain of 18 dB. This combination of high
frequency performance provides the flexibility designers
are looking for to improve system performance while
reducing size and cost. The TGA4548-SM also has an
integrated power detector to support system diagnostics
and other needs.
24-Lead 5.0ꢀxꢀ5.5ꢀxꢀ1.7ꢀmm Air Cavity Laminate Package
The TGA4548-SM is offered in a small 5x5.5 mm surface
mount package, matched to 50Ω and has integrated DC
blocking capacitors on both RF ports allowing for simple
system integration. The frequency coverage and
operational flexibility allows it support satellite
communication as well as point to point data links.
Key Features
Frequency Range:ꢀ17 – 20 GHz
PSAT (PIN=22 dBm): 40 dBm
PAE (PIN=22 dBm): 25 %
The TGA4548-SM is 100% DC and RF tested to ensure
compliance to electrical specifications.
Small Signal Gain: 30 dB
Integrated Power Detector
Bias: VD1ꢀ= VD2 = VD3 =ꢀ+28ꢀV, ID1 + ID2 + ID3 = 300ꢀmA
Package Dimensions: 5.0 x 5.5 x 1.7 mm
Lead-free and RoHS compliant.
Performance is typical across frequency. Please
reference electrical specification table and data plots
for more details.
Functional Block Diagram
Applications
Point-to-Point Radio
Satellite Communications
Ordering Information
Part No.
Description
TGA4548-SM
TGA4548-SMTR7
TGA4548-SMEVB
K-band 10W GaN PA
200 pieces on a 7” reel (standard)
Evaluation Board
Data Sheet Rev. E, May 27, 2020
1 of 17
www.qorvo.com
TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Rating
29.5 V
Parameter
Min
Typ
+28
300
Max Units
Drain Voltage (VD)
Drain Voltage (VD)
Drain Current, Quiescent (IDQ
V
Gate Voltage Range (VG)
-8 to 0 V
500 mA
500 mA
2 A
)
mA
Drain Current Stage 1 (ID1), Top or Bottom
Drain Current Stage 2 (ID2), Top or Bottom
Drain Current Stage 3 (ID3), Top and Bottom
Gate Current (IG),
Drain Current, RF (ID_Drive
)
See chart page 5
−2.1 to -2.8
mA
V
Gate Voltage Typ. Range (VG)
See chart
26 dBm
45 W
Gate Current, RF (IG_Drive
Operating Temp. Range
)
See chart page 5
mA
°C
RF Input Power, CW, 50ꢁΩ, T=25ꢁ°C
Dissipated Power (PDISS), CW, 85°C
Reference Diode Current (Iref)
−40
+25
+85
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
4 mA
Detector Diode Current (Idet
Storage Temperature
)
4 mA
−55 to +150ꢁ°C
260ꢁ°C
Gate Current Maximum vs. TCH vs. Stage
Mounting Temperature (30 seconds)
100
Total
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
90
Stage 3
80
Stage 2
70
60
50
40
30
20
10
0
Stage 1
110
120
130
140
150
160
170
180
Channel Temperature (0C)
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Unless Otherwise
PIN = +22 dBm
Min
17
Typ.
Max
Units
GHz
dBm
%
Operational Frequency Range
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
20
39
40
25
PIN = +22 dBm
Frequency = 17.7, 18.7 GHz
Frequency = 19.7 GHz
23.5
21
30
Small Signal Gain, S21
dB
29
Input Return Loss, IRL
Output Return Loss, ORL
Third Order Intermodulation, IM3
S21 Temperature Coefficient
PSAT Temperature Coefficient
Gate Leakage
10
dB
dB
7
POUT = +34 dBm/tone
− 25
−0.06
−0.02
-1.5
dBc
Tdiff = (85 – (−40)) °C
dB/°C
dBm/°C
mA
Tdiff = (85 – (−40)) °C, Pin = +23 dBm
VD = +10 V, VG = -3.7 V
-6.5
0.1
Notes:
1. Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
2. TBASE is back side of package
Data Sheet Rev. E, May 27, 2020
2 of 17
www.qorvo.com
TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, PIN = +22dBm,
TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Output Power vs. Frequency vs. Pin
43
42
41
40
39
38
37
36
35
Pin = 24 dBm
34
Pin = 22 dBm
33
Pin = 20 dBm
Pin = 18 dBm
32
31
30
15
16
17
18
19
20
21
22
Frequency (GHz)
Output Power vs. Frequency vs. Bias
Output Power vs. Frequency vs. TBASE
43
42
41
40
39
38
37
36
35
34
33
32
31
30
43
42
41
40
39
38
37
36
35
34
33
32
31
30
PIN = 18 dBm
28V_600mA
28V_300mA
22V_300mA
-40C
+25C
+85C
15
16
17
18
19
20
21
22
15
16
17
18
19
20
21
22
Frequency (GHz)
Frequency (GHz)
Output Power vs. Pin vs. Frequency
Output Power vs. Pin vs. TBASE
Frequency = 19.7 GHz
43
41
39
37
35
33
31
29
27
25
23
21
43
41
39
37
35
33
31
29
27
25
23
21
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
-40C
+25C
+85C
-10
-5
0
5
10
15
20
25
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Data Sheet Rev. E, May 27, 2020
3 of 17
www.qorvo.com
TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, PIN = +22dBm,
TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
PAE vs. Frequency vs. Pin
PAE vs. Output Power vs. Bias
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
Frequency = 19.7 GHz
Pin = 24 dBm
Pin = 22 dBm
Pin = 20 dBm
Pin = 18 dBm
28V_600mA
28V_300mA
22V_300mA
0
0
15
16
16
-5
17
18
19
20
21
22
22
25
20 22 24 26 28 30 32 34 36 38 40 42 44
Output Power (dBm)
Frequency (GHz)
PAE vs. Frequency vs. Bias
PAE vs. Frequency vs. TBASE
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
PIN = 18 dBm
28V_600mA
28V_300mA
22V_300mA
-40C
+25C
+85C
0
0
15
17
18
19
20
21
15
16
17
18
19
20
21
22
Frequency (GHz)
Frequency (GHz)
PAE vs. Pin vs. Frequency
PAE vs. Pin vs. TBASE
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
-40C
+25C
+85C
0
0
-10
0
5
10
15
20
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Data Sheet Rev. E, May 27, 2020
4 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, PIN = +22dBm,
TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Large Signal Gain vs. Pin vs. Frequency
Large Signal Gain vs. Pin vs. TBASE
38
36
34
32
30
28
26
24
22
20
18
16
38
36
34
32
30
28
26
24
22
20
18
16
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
-40C
+25C
+85C
-10
-5
0
5
10
15
20
25
25
25
-10
-5
0
5
10
15
20
25
25
25
Pin (dBm)
Pin (dBm)
Drain Current vs. Pin vs. TBASE
Drain Current vs. Pin vs. Frequency
2000
1800
1600
1400
1200
1000
800
2000
1800
1600
1400
1200
1000
800
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
600
600
-40C
400
400
+25C
+85C
200
200
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Gate Current vs. Pin vs. TBASE
Gate Current vs. Pin vs. Frequency
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
-40C
+25C
+85C
0
0
-5
-5
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. E, May 27, 2020
5 of 17
www.qorvo.com
TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, PIN = +22dBm,
TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
AM-PM vs. TBASE
AM-PM vs. Frequency
180
140
100
60
180
140
100
60
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
-40C
+25C
+85C
20
20
-20
-20
-60
-60
-100
-140
-180
-100
-140
-180
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
AM-AM vs. Frequency
AM-AM vs. TBASE
36
34
32
30
28
26
24
22
20
18
16
14
12
10
36
34
32
30
28
26
24
22
20
18
16
14
12
10
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
-40C
+25C
+85C
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
Data Sheet Rev. E, May 27, 2020
6 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Power Detector
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, PIN = +22dBm,
TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Power Detector vs. Pout vs. Frequency
Power Detector vs. Pout vs. TBASE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
+25C
-40C
+85C
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
Detector Diode vs. Pout vs. Frequency
Detector Diode vs. Pout vs. TBASE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
+25C
-40C
+85C
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
Reference Diode vs. Pout vs. Frequency
Reference Diode vs. Pout vs. TBASE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Frequency = 19.7 GHz
17 GHz
17.7 GHz
18.5 GHz
19.7 GHz
20 GHz
+25C
-40C
+85C
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
20 22 24 26 28 30 32 34 36 38 40 42 44
Pout (dBm)
Data Sheet Rev. E, May 27, 2020
7 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, Δf = 10MHz,
TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
IM3 and IM5 vs. Output Power vs. TBASE
IM3 and IM5 vs. Output Power vs. Bias
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Frequency = 17.5 GHz
Frequency = 17.5 GHz
-40C IM3
-40C IM5
+25C IM3
+25C IM5
+85C IM3
+85C IM5
22V_300mA IM3
22V_300mA IM5
28V_300mA IM3
28V_300mA IM5
28V_600mA IM3
28V_600mA IM5
18
20
22
24
26
28
30
32
34
36
38
18
18
18
20
22
24
26
28
30
32
34
36
38
38
38
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 and IM5 vs. Output Power vs. TBASE
IM3 and IM5 vs. Output Power vs. Bias
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Frequency = 18.5 GHz
Frequency = 18.5 GHz
-40C IM3
-40C IM5
+25C IM3
+25C IM5
+85C IM3
+85C IM5
22V_300mA IM3
22V_300mA IM5
28V_300mA IM3
28V_300mA IM5
28V_600mA IM3
28V_600mA IM5
18
20
22
24
26
28
30
32
34
36
38
20
22
24
26
28
30
32
34
36
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 and IM5 vs. Output Power vs. Bias
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
IM3 and IM5 vs. Output Power vs. TBASE
Frequency = 19.7 GHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Frequency = 19.7 GHz
22V_300mA IM3
22V_300mA IM5
28V_300mA IM3
28V_300mA IM5
28V_600mA IM3
28V_600mA IM5
-40C IM3
-40C IM5
+25C IM3
+25C IM5
+85C IM3
+85C IM5
20
22
24
26
28
30
32
34
36
18
20
22
24
26
28
30
32
34
36
38
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Data Sheet Rev. E, May 27, 2020
8 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASEꢀ=ꢀ+25ꢀ°C, Z0ꢀ=ꢀ50ꢀΩ
Small Signal Gain vs. Frequency vs. TBASE
Small Signal Gain vs. Frequency vs. Bias
38
36
34
32
30
28
26
24
22
20
18
16
38
36
34
32
30
28
26
24
22
20
18
16
28V_600mA
28V_300mA
22V_300mA
-40C
+25C
+85C
15
15
15
16
17
18
19
20
21
22
22
22
15
15
15
16
17
18
19
20
21
22
22
22
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency vs. TBASE
Input Return Loss vs. Frequency vs. Bias
0
-3
0
-3
-6
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
28V_600mA
28V_300mA
22V_300mA
-40C
+25C
+85C
16
17
18
19
20
21
16
17
18
19
20
21
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency vs. TBASE
Output Return Loss vs. Frequency vs. Bias
0
-3
0
-3
-6
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
-40C
+25C
+85C
28V_600mA
28V_300mA
22V_300mA
16
17
18
19
20
21
16
17
18
19
20
21
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. E, May 27, 2020
9 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
2.38
ºC/W
TBASE = 85 °C, VD = 28 V, IDQ = 300 mA, Freq = 20 GHz,
PDISS = 8.4 W
Channel Temperature, TCH (Under RF) (2)
105
2.42
160
°C
ºC/W
°C
Thermal Resistance (θJC) (1)
TBASE = 85 °C, VD = 28 V, IDQ = 300 mA, Freq = 20 GHz,
ID_DRIVE ≈ 1.45 A, PIN = 22 dBm, POUT ≈ 40 dBm,
PDISS = 31 W
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of package TBASE
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates,” located here https://www.qorvo.com/products/d/da006480
RJC and TCH vs. Power Dissipated
Power Dissipated vs. Frequency vs. Pin
2.5
2.4
2.3
2.2
2.1
2.0
200
180
160
140
120
100
30
28
26
24
22
20
18
16
14
12
10
TBASE = 85 °C
Pin = 18 dBm
Pin = 16 dBm
Pin = 14 dBm
Rjc
Tch
15
16
17
18
19
20
21
22
10
15
20
25
30
35
40
Frequency (GHz)
PDISS (W)
Test conditions unless otherwise noted: CW, VD = 28 V, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, TBASEꢀ=ꢀ+85ꢀ°C
Data Sheet Rev. E, May 27, 2020
10 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Recommended Application Circuit
1
3
15
13
Notes:
1. VG1, VG2, and VG3 can be biased from either top side or bottom side; the non-biased side can be left open but bias network is
required
2. VD1, VD2, and VD3 must be biased from both sides.
3. Tied all VD’s together; tied all VG’s together
Bias Up Procedure
1. Set ID limit to 3000 mA, IG limit to 40 mA (see page 5)
Bias Down Procedure
1. Turn off RF supply
2. Apply −5ꢁV to VG
2. Reduce VG to −5ꢁV; ensure IDQ is approx. 0ꢁmA
3. Set VD to 0ꢁV
3. Apply +28ꢁV to VD; ensure IDQ is approx. 0ꢁmA
4. Adjust VG until IDQ = 300ꢁmA (VG ~ −2.5 +/- 0.4 V Typ.).
5. Turn on RF supply
4. Turn off VD supply
5. Turn off VG supply
Data Sheet Rev. E, May 27, 2020
11 of 17
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Application Evaluation Board (EVB)
Gnd VD1 VD2
VD3 VDET VREF
RFIN
RFOUT
VG1 VG2 VG3
VD1 VD2 VD3
Notes:
1. Board Material is RO4003 0.008” thickness with ½ oz. copper cladding
2. Vias under the ground paddle are copper filled.
Bill of Materials
Reference Des.
Value Description
Manuf.
Part Number
U1
TGA4548-SM
Qorvo
C1, C3, C6, C8, C10, C12,
C14, C16, C18, C20, C22, C24
1 uF
CAP, 1uF, ±10%, 50V, X7R, 0805
Various
C7, C9, C11, C19, C21, C23
100 pF CAP, 100pF, ±1%, 50V, COG, 0402
10 Ω RES, 10 ohm, 1/16W, ±1%, 0402
Various
Various
Various
Various
R1, R3, R6, R10, R12, R14
R7, R8
R9
20K Ω RES, 20K ohm, 1/8W, ±1%, 0805
49.9 Ω RES, 49.9 ohm, 0.1W, ±1%, 0402
H1 – H4
-
Connector, Header, 1x3 (right angle)
Connector, Female, End Launch, 2.9mm
Screw, cap, socket head, 2-56x1/8”
Southwest
Microwave
J1, J2
S1 – S4
PCB
-
1092-01A-5
Rogers 4003C, 8 mil dielectric, 1 oz. copper
(gold plated), 2 layers
-
Rogers Corp.
Custom
Custom
T
-
-
T-Carrier, Copper C110, 0.990 x 2 x 0.275”
Solder
Paste, solder, Syntech, Sn62/Pb36/Ag2
Data Sheet Rev. E, May 27, 2020
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Pin Description
Top View
Bottom View
Pad No.
Label
Description
1, 3, 7, 13, 15, 21 GND
Ground. Must be grounded on PCB (same as Pad 25)
2
RFIN
VG1
RF input, matched to 50Ω, DC blocked
4, 24
5, 23
6, 22
8, 20
9, 19
10, 18
11, 17
12, 16
14
Gate voltage, stage 1. External bypassing required; refer to page 11 for recommendation
Gate voltage, stage 2. External bypassing required; refer to page 11 for recommendation
Gate voltage, stage 3. External bypassing required; refer to page 11 for recommendation
Drain voltage, stage 1. External bypassing required; refer to page 11 for recommendation
Drain voltage, stage 2. External bypassing required; refer to page 11 for recommendation
Drain voltage, stage 3. External bypassing required; refer to page 11 for recommendation
Detector diode output voltage. Varies with RF output power.
VG2
VG3
VD1
VD2
VD3
VDET
VREF
RFOUT
Reference diode output voltage
RF output, matched to 50Ω, DC blocked
Backside paddle. Multiple conductive filled vias should be employed to minimize inductance and
thermal resistance; see Mounting Configuration on page 14 for suggested footprint.
25
GND
Data Sheet Rev. E, May 27, 2020
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Mechanical Dimensions and Marking
Units: millimeters
Tolerances: unless specified
x.xx = ± 0.25 x.xxx = ± 0.100 Angles = 0.50
Materials:
Base: EHS Laminate
Lid: Laminate
All metalized features are NiAu plated (typical 5um Ni / 0.1um min Au)
Part is epoxy sealed
Marking:
TGA4548-SM: Part number
MXXXXXXX: where XXXXXXX represents assembly lot number
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Ground vias are critical for the proper performance of this device. Vias should have a final plated thru diameter of .1524ꢀmm
(.006”).
3. For best thermal performance, vias under the ground paddle should be copper filled.
4. The pad pattern shown has been developed and tested for optimized assembly at Qorvo. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company,
careful process development is recommended.
Data Sheet Rev. E, May 27, 2020
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Tape and Reel Information
Standard T/R size = 200 pieces on a 7” reel
Dimensions: millimeters (mm)
Tolerances unless otherwise noted: .X = ± .2; .XX = ± .10
Data Sheet Rev. E, May 27, 2020
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Assembly Notes
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
Recommended Soldering Temperature Profile
Data Sheet Rev. E, May 27, 2020
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TGA4548-SM
®
17 – 20 GHz 10 W GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢁ–ꢁHuman Body Model (HBM)
ESDꢁ–ꢁCharged Device Model (CDM)
MSLꢁ–ꢁMoisture Sensitivity Level
1A
C2
3
ANSI/ESD/JEDEC JS-001
Caution!
ESD-Sensitive Device
ANSI/ESD/JEDEC JS-002
IPC/JEDEC J-STD-020
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. E, May 27, 2020
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