TGF2977-SMEVBP02 [QORVO]
DC â 12 GHz, 32 V, 5 W GaN RF Transistor;
| 型号： | TGF2977-SMEVBP02 |
| 厂家： | 
Qorvo |
| 描述： | DC â 12 GHz, 32 V, 5 W GaN RF Transistor |
| 文件： | 总28页 (文件大小：2254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Product Overview
The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC
HEMT which operates from DC to 12 GHz and 32 V supply.
The device is in an industry standard overmolded package
and is ideally suited for avionics, military, marine and
weather radar. The device can support pulsed and linear
operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
3 x 3mm Package
Key Features
• Frequency: DC to 12 GHz
• Output Power (P3dB)1: 4.8 W
• Linear Gain1: 13 dB
Functional Block Diagram
• Typical PAE3dB1: 50%
N/C
14
N/C
16
N/C
15
N/C
13
• Operating Voltage: 32 V
• CW and Pulse capable
Note 1: @ 9 GHz Load Pull
N/C
1
2
3
4
12 N/C
VG, RF IN
11
VD, RF OUT
Applications
VG, RF IN
10
9
VD, RF OUT
N/C
• Military radar
N/C
• Commercial radar
o
o
o
Avionics
Marine
5
6
7
8
Weather
N/C
N/C
N/C
N/C
Ordering info
Part No.
TGF2977-SM
ECCN Description
QFN Packaged Part
EAR99
TGF2977-
SMEVBP01
EAR99
9 – 10 GHz EVB
TGF2977-
SMEVBP02
EAR99
2.6 – 4.2 GHz EVB
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 1 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
−40 +25 +85
+32 +40
25
ꢁ°C
V
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, IDMAX
+100
-7 to +2
0.6
V
V
mA
mA
V
A
4
Drain Current, ID
–
–
–
–
–
325
−2.8
–
–
–
Gate Current Range, IG
Power Dissipation, CW (PDISS)
See page 20.
9.32
mA
W
3
Gate Voltage, VG
Channel Temperature (TCH)
Power Dissipation (PD)2,4
Power Dissipation (PD), CW2
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
225
9.2
7.4
°C
W
RF Input Power, CW, Tamb
25ꢀ°C
=
+30
275
dBm
°C
–
–
W
Channel Temperature, TCH
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
Storage Temperature
Notes:
−65 to +150
°C
3. To be adjusted to desired IDQ
4. Pulsed, 100uS PW, 20% DC
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Device base temperature = 85 °C.
Measured Load Pull Performance – Power Tuned1
Typical Values
Parameter
Units
GHz
V
Frequency, F
5
6
8
9
10
32
25
12
32
25
Drain Voltage, VD
Drain Bias Current, IDQ
32
25
32
25
32
25
32
25
mA
Output Power at 3dB
compression, P3dB
37.5
37.2
37.0
36.8
36.8
36.5
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
52.0
15.2
56.3
14.4
51.1
11.4
45.8
9.8
41.7
8.3
31.8
5.3
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
dB
2. Characteristic Impedance, Zo = 15 Ω.
Measured Load Pull Performance – Efficiency Tuned1
Parameter
Typical Values
Units
GHz
V
Frequency, F
5
6
8
9
10
32
25
12
32
25
Drain Voltage, VD
Drain Bias Current, IDQ
32
25
32
25
32
25
32
25
mA
Output Power at 3dB
compression, P3dB
37.2
36.3
35.7
36.0
35.5
36.1
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
60.2
15.5
62.3
14.8
56.6
12.0
52.0
10.4
47.1
8.9
38.2
5.8
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
dB
2. Characteristic Impedance, Zo = 15 Ω.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 2 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
9 – 10 GHz EVB 9.4 GHz Performance1
Parameter
Min
–
Typ
10.1
3.6
Max
Units
ꢁdB
Linear Gain, GLIN
–
–
Output Power at 3dB compression point, P3dB
–
W
Drain Efficiency at 3dB compression point,
DEFF3dB
–
–
48.4
7.1
–
–
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +32ꢁV, IDQ = 35ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization – Mismatch Ruggedness at 9.4 GHz
Symbol Parameter
dB Compression
Typical
VSWR Impedance Mismatch Ruggedness
Test conditions unless otherwise noted: TA = 25 and -40 °C, VD = 32 V, IDQ = 35 mA
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.
3
ꢁ10:1
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 3 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load pull reference planes where the performance was measured.
5GHz, Load-pull
1
.
8
Zs(1fo) = 2.68-9.05i
Zs(2fo) = 3.5-11.95i
Zs(3fo) = 14.93-16.59i
Ω
Max Power is 37.5dBm
at Z = 17.03+17.134i
•
Ω
Ω
Ω
= 0.2718+0.3896i
Max Gain is 16.7dB
Γ
•
at Z = 5.662+18.696i
= 0.2017+0.7224i
Ω
Γ
Max PAE is 60.2%
at Z = 12.543+23.845i
•
16.3
Ω
= 0.3774+0.539i
Γ
3
59.6
15.3
53.6
51.6
37.5
49.6
14.8
37.3
37.1
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 4 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load pull reference planes where the performance was measured.
6GHz, Load-pull
1
.
4
Zs(1fo) = 6.61-22.5i
Zs(2fo) = 53.12+35.21i
Ω
Max Power is 37.2dBm
at Z = 12.052+14.213i
•
Ω
Ω
Zs(3fo) = 14.15+15.81i
Ω
= 0.1309+0.4566i
Γ
Max Gain is 15dB
•
at Z = 5.062+17.011i
Ω
= 0.1301+0.7376i
Max PAE is 62.3%
Γ
•
at Z = 7.677+17.265i
= 0.1625+0.6376i
Ω
Γ
14.9
60.7
14.4
56.7
54.7
13.9
37.1
36.9
36.7
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 5 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load pull reference planes where the performance was measured.
8GHz, Load-pull
Zs(1fo) = 22.46-40.74i
Zs(2fo) = 10.51+20.05i
Ω
Max Power is 37dBm
at Z = 10.87+3.226i
•
Ω
Ω
Zs(3fo) = 9.52-6.2i
Ω
= -0.1419+0.1424i
Max Gain is 12.1dB
Γ
•
at Z = 4.508+6.484i
Ω
= -0.3849+0.4603i
Max PAE is 56.6%
Γ
•
at Z = 5.73+5.411i
= -0.3549+0.3536i
Ω
Γ
11.8
36.5
36.7
11.3
55.6
10.8
36.9
53.6
51.6
Power
Gain
49.6
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 6 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load pull reference planes where the performance was measured.
9GHz, Load-pull
Zs(1fo) = 27.91-42.54i
Zs(2fo) = 31.37+22.73i
Ω
Max Power is 36.8dBm
at Z = 12.036-2.288i
•
Ω
Ω
Zs(3fo) = 10.8+0.74i
Ω
= -0.1017-0.0932i
Max Gain is 10.5dB
Γ
•
at Z = 5.152+0.393i
= -0.4881+0.029i
Ω
Γ
Max PAE is 51.9%
at Z = 6.972-1.522i
•
Ω
= -0.3589-0.0941i
Γ
43.1
45.1
47.1
51.1
36.7
10.1
36.5
36.3
Power
Gain
9.64
9.14
Zo = 15
3dB Compression Referenced to Peak Gain
PAE
Ω
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 7 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load pull reference planes where the performance was measured.
10GHz, Load-pull
Zs(1fo) = 41.96-41.29i
Zs(2fo) = 13.13+18.14i
Ω
Max Power is 36.8dBm
at Z = 15.039-6.807i
•
Ω
Ω
Zs(3fo) = 23.9-11.76i
Ω
= 0.0501-0.2152i
Max Gain is 8.9dB
at Z = 8.31-4.022i
Γ
•
Ω
= -0.2498-0.2156i
Max PAE is 47.1%
Γ
•
39.1
41.1
at Z = 7.496-5.834i
= -0.2495-0.324i
Ω
Γ
43.1
36.7
36.5
36.3
8.79
Power
Gain
8.29
7.79
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 8 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load pull reference planes where the performance was measured.
12GHz, Load-pull
Zs(1fo) = 67.13-19.6i
Ω
Max Power is 36.5dBm
at Z = 30.8-18.712i
•
Ω
4.93
= 0.4387-0.2293i
Max Gain is 5.9dB
Γ
•
at Z = 14.522-21.734i
= 0.341-0.4852i
Ω
Ω
Γ
Max PAE is 38.2%
at Z = 18.929-24.441i
•
= 0.4179-0.4193i
Γ
31.1
32.1
33.1
5.43
36.3
36.1
38.1
35.9
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Ω
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 9 of 28 -
14 Zs(1fo) = 22.46-40.74i
14 Zs(1fo) = 22.46-40.74i
Ω
Ω
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load-pull and source-pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
5 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
5 GHz - Power Tuned
22
21
20
19
18
17
16
15
14
13
12
100
90
80
70
60
50
40
30
20
10
0
22
21
20
19
18
17
16
15
14
13
12
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 2.68-9.05iΩ
Zs(1fo) = 2.68-9.05iΩ
Zs(2fo) = 3.5-11.95iΩ
Zs(3fo) = 14.93-16.59iΩ
Zl(1fo) = 12.54+23.84iΩ
Zl(2fo) = 3.43-7.63iΩ
Zl(3fo) = 19.76+26.79iΩ
Zs(2fo) = 3.5-11.95iΩ
Zs(3fo) = 14.93-16.59iΩ
Zl(1fo) = 17.03+17.13iΩ
Zl(2fo) = 4.42-4.75iΩ
Zl(3fo) = 41.76-8.7iΩ
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
Gain and PAE vs. Output Power
6 GHz - Power Tuned
Gain and PAE vs. Output Power
6 GHz - Efficiency Tuned
22
100
20
100
Gain
PAE
Gain
PAE
Zs(1fo) = 6.61-22.5iΩ
Zs(2fo) = 53.12+35.21iΩ
Zs(3fo) = 14.15+15.81iΩ
Zl(1fo) = 12.05+14.21iΩ
Zl(2fo) = 7.08-9.98iΩ
Zl(3fo) = 19.54+17.1iΩ
21
20
19
18
17
16
15
14
13
12
90
80
70
60
50
40
30
20
10
0
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
Zs(1fo) = 6.61-22.5iΩ
Zs(2fo) = 53.12+35.21iΩ
Zs(3fo) = 14.15+15.81iΩ
Zl(1fo) = 7.68+17.27iΩ
Zl(2fo) = 6.38-15.24iΩ
Zl(3fo) = 8.49+14.69iΩ
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Output Power [dBm]
Gain and PAE vs. Output Power
8 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
8 GHz - Efficiency Tuned
18
100
18
100
Gain
PAE
Gain
PAE
17
90
80
70
60
50
40
30
20
10
0
17
90
80
70
60
50
40
30
20
10
0
16
16
15
15
Zs(2fo) = 10.51+20.05iΩ
Zs(3fo) = 9.52-6.2iΩ
Zl(1fo) = 5.73+5.41iΩ
Zl(2fo) = 32.86+6.58iΩ
Zl(3fo) = 14.32+2.06iΩ
Zs(2fo) = 10.51+20.05iΩ
Zs(3fo) = 9.52-6.2iΩ
Zl(1fo) = 5.73+5.41iΩ
Zl(2fo) = 32.86+6.58iΩ
Zl(3fo) = 14.32+2.06iΩ
13
12
11
10
9
13
12
11
10
9
8
8
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Output Power [dBm]
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Output Power [dBm]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 10 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. C Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 21 for load-pull and source-pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
9 GHz - Power Tuned
Gain and PAE vs. Output Power
9 GHz - Efficiency Tuned
16
15
14
13
12
11
10
9
50
45
40
35
30
25
20
15
10
5
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 27.91-42.54iΩ
Zs(1fo) = 27.91-42.54iΩ
Zs(2fo) = 31.37+22.73iΩ
Zs(3fo) = 10.8+0.74iΩ
Zl(1fo) = 6.97-1.52iΩ
Zl(2fo) = 11.91+12.77iΩ
Zl(3fo) = 9.59+3.28iΩ
Zs(2fo) = 31.37+22.73iΩ
Zs(3fo) = 10.8+0.74iΩ
Zl(1fo) = 12.04-2.29iΩ
Zl(2fo) = 14.25+6.33iΩ
Zl(3fo) = 12.1+2.51iΩ
8
8
7
7
6
0
6
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power [dBm]
11 13 15 17 19 21 23 25 27 29 31 33 35 37
Output Power [dBm]
Gain and PAE vs. Output Power
10 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
10 GHz - Power Tuned
15
50
45
40
35
30
25
20
15
10
5
15
50
Zs(1fo) = 41.96-41.29iΩ
Zs(2fo) = 13.13+18.14iΩ
Zs(3fo) = 23.9-11.76iΩ
Zl(1fo) = 15.04-6.81iΩ
Zl(2fo) = 7.28+0.69iΩ
Zl(3fo) = 33.7-0.21iΩ
Gain
PAE
14
13
12
11
10
9
14
13
12
11
10
9
45
40
35
30
25
20
15
10
5
Zs(1fo) = 41.96-41.29iΩ
Zs(2fo) = 13.13+18.14iΩ
Zs(3fo) = 23.9-11.76iΩ
Zl(1fo) = 7.5-5.83iΩ
Zl(2fo) = 9.08+1.69iΩ
Zl(3fo) = 23.54-11.32iΩ
8
8
7
7
Gain
PAE
6
6
5
0
5
0
25 26 27 28 29 30 31 32 33 34 35 36 37
Output Power [dBm]
25 26 27 28 29 30 31 32 33 34 35 36
Output Power [dBm]
Gain and PAE vs. Output Power
12 GHz - Power Tuned
Gain and PAE vs. Output Power
12 GHz - Efficiency Tuned
12
50
12
50
45
40
35
30
25
20
15
10
5
Gain
PAE
11
10
9
45
40
35
30
25
20
15
10
5
11
10
9
8
8
Zs(1fo) = 67.13-19.6iΩ
Zl(1fo) = 18.93-24.44iΩ
7
7
Zs(1fo) = 67.13-19.6iΩ
Zl(1fo) = 30.8-18.71iΩ
6
6
5
5
4
Gain
PAE
4
3
3
2
21
0
37
2
21
0
37
23
25
27
Output Power [dBm]
29
31
33
35
23
25
27
Output Power [dBm]
29
31
33
35
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 11 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
S-Parameters Of 9 – 10 GHz EVB at -40°C1
Notes:
1. Test Conditions: VD = 32 V, IDQ = 35 mA
S21
S11
20
0
10
0
-5
-10
-15
-20
-25
-10
-20
-30
-40
-50
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency [GHz]
Frequency [GHz]
S22
Stability Factor
0
-5
3
2.5
2
-10
-15
-20
-25
1.5
1
0.5
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 12 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Power Driveup Performance Over Temperatures Of 9 – 10 GHz EVB1, 2
Notes:
2. Test Conditions: VD = 32 V, IDQ = 35 mA, 100 uS Pulse Width, 20% Duty Cycle
3. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network.
P3dB vs. Frequency vs. Temperature
DEFF3dB vs. Frequency vs. Temperature
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
65
60
55
50
45
40
35
25°C
-40°C
85°C
25°C
-40°C
85°C
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
G3dB vs. Frequency vs. Temperature
PDISS3dB vs. Frequency vs. Temperature
15
14
13
12
11
10
9
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25°C
-40°C
85°C
25°C
-40°C
85°C
8
7
6
5
4
3
2
1
0
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 13 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Power Driveup Performance At 25°C Of 9 – 10 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 32 V, IDQ = 35 mA, 100 uS Pulse Width, 20% Duty Cycle
2. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..
P3dB vs. Frequency @ 25°C
DEFF3dB vs. Frequency @ 25°C
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
65
60
55
50
45
40
35
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
G3dB vs. Frequency @ 25°C
PDISS3dB vs. Frequency @ 25°C
15
14
13
12
11
10
9
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
8
7
6
5
4
3
2
1
0
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 14 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
S-Parameters Of 2.6 – 4.2GHz EVB1
Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, T = 25°C
S21
S11
30
0
20
10
-5
-10
-15
-20
-25
-30
-35
-40
0
-10
-20
-30
-40
-50
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency [GHz]
Frequency [GHz]
S22
Stability Factor
0
-2
3
2.5
2
-4
-6
1.5
1
-8
-10
-12
0.5
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 15 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Power Driveup Performance Of 2.6 – 4.2GHz EVB1, 2
Notes:
3. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle, T = 25°C
4. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..
P3dB vs. Frequency
Deff3dB vs. Frequency
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
4
4.1 4.2
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
Frequency [GHz]
4
4.1 4.2
Frequency [GHz]
G3dB vs. Frequency
PDISS3dB vs. Frequency
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
4
4.1 4.2
2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
4
4.1 4.2
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 16 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Thermal and Reliability Information – Pulsed1, 2, 3, 4
Maximum Channel Temperature vs. PDISS @ 20% DC
QFN base fixed at 85 oC
280
260
240
220
200
180
160
140
120
20% D.C. @ 100us
PDISS = 10 W
PDISS = 8.8 W
PDISS = 7.5 W
PW = 100 uS
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (Sec)
Parameter
Thermal Resistance (θJC)
Peak Channel Temperature (TCH)
Median Lifetime (TM)1
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Thermal Resistance (θJC)
Peak Channel Temperature (TCH)
Median Lifetime (TM)1
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Thermal Resistance (θJC)
Peak Channel Temperature (TCH)
Median Lifetime (TM)1
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Thermal Resistance (θJC)
Peak Channel Temperature (TCH)
Median Lifetime (TM)1
Conditions
Values Units
15.4
241
°C/W
°C
85 °C Case
10.1 W Pdiss, 100uS PW, 20%
2.6E6
9.8
184
Hrs
°C/W
°C
15.2
225
°C/W
°C
85 °C Case
9.2 W Pdiss, 100uS PW, 20%
9.0E06
9.8
175
Hrs
°C/W
°C
15.0
217
°C/W
°C
85 °C Case
8.8 W Pdiss, 100uS PW, 20%
1.8E07
9.8
171
Hrs
°C/W
°C
14.5
195
°C/W
°C
85 °C Case
1.2E08
9.6
158
Hrs
°C/W
°C
7.6 W Pdiss, 100uS PW, 20%
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless
otherwise noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only.
3. Thermal resistance measured to backside of package.
4. Median lifetime under pulsed condition is the lifetime under CW condition divided by the duty cycle.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 17 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Thermal and Reliability Information – CW1, 2, 3
TGF2977-SM Max Channel Temperature vs. CW Power
Surface of QFN Package Fixed at 85C
255
245
235
225
215
205
195
185
175
165
155
145
135
125
115
105
95
TGF2977-SM
1E6 Hours Operating Limit
85
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
CW Power Dissipation, W
Parameter
Conditions
Values Units
Thermal Resistance (θJC)
Maximum Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Thermal Resistance (θJC)
Maximum Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Thermal Resistance (θJC)
Maximum Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Thermal Resistance (θJC)
Maximum Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance, IR (θJC)
Max. Channel Temperature, IR (TCH)
Notes:
20.1
262
1.1E05
12.6
196
18.9
225
1.8E6
12.2
175
17.9
198
1.9E07
11.7
159
17.4
172
2.3E08
11.8
144
°C/W
°C
Hrs
°C/W
°C
°C/W
°C
Hrs
°C/W
°C
°C/W
°C
Hrs
°C/W
°C
°C/W
°C
Hrs
°C/W
°C
85 °C Case
8.8 W Pdiss, CW
85 °C Case
7.4 W Pdiss, CW
85 °C Case
6.3 W Pdiss, CW
85 °C Case
5.0 W Pdiss, CW
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless
otherwise noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 18 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Median Lifetime1
Notes:
1. Test Conditions: VD = +32ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing
.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 19 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Maximum Gate Current
Maximum Gate Current Vs. Channel Temperature
10
9
8
7
6
5
4
3
2
1
0
120 130 140 150 160 170 180 190 200 210 220 230
Channel Temperature [°C]
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 20 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Pin Configuration and Description1
Note 1: The TGF2977-SM will be marked with the “2977” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the MZZZ” is the production lot number.
Pin
2
Symbol
RF IN / VG
RF OUT / VD
NC
Description
Gate
Drain
10 - 11
1, 3 – 9, 12 - 16
Back side
Not Connected
Source
Source / Ground / Backside of part
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 21 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Mechanical Drawing1, 2, 3
Note:
1. All dimensions are in milimeters.
2. Unless otherwise noted, all dimension tolerances are ± 0.127 mm.
3. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both
lead-free (maximum 260°C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering
process.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 22 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
9 – 10 GHz Application Circuit - Schematic
Bias-up Procedure
1. Set VG to -4 V.
Bias-down Procedure
1. Turn off RF signal.
2. Set ID current limit to 30 mA.
3. Apply 32 V VD.
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge
4. Turn off VG
4. Slowly adjust VG until ID is set to 25 mA.
5. Set ID current limit to 0.4 A (Pulsed operation)
6. Apply RF.
9 – 10 GHz Application Circuit - Bill Of material
Description
Ref. Des.
C1
Manufacturer
Part Number
Capacitor 0.9pF, 200V, 0402
Capacitor 0.3 pF, 200V, 0402
Capacitor 1.8 pF, 200V, 0402
Capacitor 2.2 pF, 200V, 0402
Capacitor 100 pF, 200V, 0603
Capacitor 0.1 nF, 200V, 0603
Capacitor 1 uF, 200V, 1206
Capacitor, Electrolytic, 47 uF, 50V, 10mm
SMD
American Technical Ceramics 600L0R3AT200T
American Technical Ceramics 600L0R3AT200T
American Technical Ceramics 600L1R8AT200T
American Technical Ceramics 600L2R2BT200T
C2
C3
C7
C4, C8
C5, C9
C6
Carpax Technologies
Digi-Key
0603G101J201S
C0805C103K5RACTU
C1206C105K4RACTU
Digi-Key
C16
Panasonic
Panasonic
EEETG1H470P
Resistor, 68 Ohm, 0402
Resistor, 10 Ohm, 0603
Resistor, 33 Ohm, 0603
R1
R2
R3
ERJ-2RKF68R0X
Generic 0603
Generic 0603
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 23 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
9 – 10 GHz Application Circuit - Layout
Board material is RO4003C 0.008” thickness with 1oz copper cladding. Overall EVB size is 1.5” x 2”.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 24 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
2.6 – 4.2 GHz Application Circuit - Schematic
Bias-up Procedure
1. Set VG to -4 V.
Bias-down Procedure
1. Turn off RF signal.
2. Set ID current limit to 30 mA.
3. Apply 32 V VD.
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge
4. Turn off VG
4. Slowly adjust VG until ID is set to 25 mA.
5. Set ID current limit to 0.5 A (Pulsed operation)
6. Apply RF.
2.6 – 4.2 GHz Application Circuit - Bill Of material
Description
Ref. Des.
C1, C9
Manufacturer
ATC
Part Number
600S1R2AT250XT
Capacitor 1.2pF, 250V, 0603
Capacitor 0.1 uF, 100V, 0603
Capacitor 2.2 pF, 250V, 0603
Capacitor 100 pF, 200V, 0603
Capacitor 1 uF, 200V, 0805
Capacitor, Electrolytic, 47 uF, 50V
Inductor 5.6 nH, 0603
C2
C3, C7
C5, C6
C4, C8
C10
AVX
ATC
0603YC104KAT2A
600S2R2BT250T
Capax Technologies
TTI Inc.
Panasonic
Coilcraft
Coilcraft
TTI
0603G101J201S
C2012X7S2A105M125AB
EEETG1H470P
L1
0603CS-5N6XJEW
0603HP-8N2XJLW
L2
Inductor 8.2 nH, 0603
R1, R2
R3
CRCW06035R60JNEA
CRCW0603215RFKEA
CRCW060333R2FKTA
CRCW060310R0JNTA
Resistor, 5.6 Ohm, 0603
Resistor, 215 Ohm, 0603
Resistor, 33.2 Ohm, 0603
Resistor, 10 Ohm, 0603
Digi-Key
TTI
R5, R6
R4
TTI
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 25 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
2.6 – 4.2 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
www.qorvo.com
- 26 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Recommended Solder Temperature Profile
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 27 of 28 -
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Handling Precautions
Parameter
Rating
Standard
ESDAꢁ/ꢁJEDEC JS-001-2012
ESDꢀ–ꢀHuman Body Model (HBM)
500 V, 1B
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) 1000 V, C3 JEDEC JESD22-C101F
MSLꢀ–ꢀMoisture Sensitivity Level
TBD
IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
Qorvo:
Web: www.Qorvo.com
Email: info-sales@qorvo.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet Rev. B, July 25, 2017 | Subject to change without notice
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- 28 of 28 -
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