TGF2978-SMEVB05 [QORVO]
20 W, 32 V, DC to 12 GHz, GaN RF Transistor;
| 型号： | TGF2978-SMEVB05 |
| 厂家： | 
Qorvo |
| 描述： | 20 W, 32 V, DC to 12 GHz, GaN RF Transistor |
| 文件： | 总33页 (文件大小：2837K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Product Overview
The Qorvo TGF2978-SM is a 20 W (P3dB) discrete GaN on
SiC HEMT which operates from DC to 12 GHz and 32 V
supply. The device is in an industry standard overmolded
package and is ideally suited for avionics, military, marine
and weather radar. The device can support pulsed and
linear operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
3 x 4mm Package
Functional Block Diagram
Key Features
• Frequency Range: DC – 12 GHz
• Output Power (P3dB)1: 20 W
• Typical PAE1: 45%
N/C
N/C
20
N/C
19
N/C
17
18
• Linear Gain1: 9.5 dB
N/C
N/C
1
2
3
16
15
14
N/C
• Operating Voltage: 32 V
• CW and Pulse capable
VD, RF OUT
VD, RF OUT
VG, RF IN
Note 1: @ 9 GHz
VG, RF IN
4
5
6
13
VD, RF OUT
N/C
12
11
VD, RF OUT
N/C
Applications
N/C
• Military radar
7
8
9
10
• Commercial radar
N/C
N/C
N/C
N/C
o
o
o
Avionics
Marine
Weather
Pad Configuration
Pad No.
3 – 4
Symbol
VG / RF IN
12 – 15
Backside
VD / RF OUT
Source / Ground
Ordering Information
Part Number
Description
TGF2978-SM
QFN Packaged Part
TGF2978-SMEVB01 9 – 10 GHz EVB
TGF2978-SMEVB02 2.7 – 3.3 GHz EVB
TGF2978-SMEVB03 3.1 – 3.5 GHz EVB
TGF2978-SMEVB04 4 – 5 GHz EVB
TGF2978-SMEVB05 5 – 6 GHz EVB
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Rating
100 V
Parameter
Drain Voltage Range (VD)
Min Typ Max Units
–
+32
100
−2.7
+40
ꢀV
mA
V
Drain to Gate Voltage (VDG
Gate Voltage Range (VG)
Drain Current (ID)
)
Drain Quiescent Current (IDQ
)
–
–
−7 to +2 V
0.6 A
1
Gate Voltage, VG
−3.5
−2.0
Gate Leakage: VD = +10 V,
VG = −3.7 V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Note:
Gate Current (IG)
−5 to 8.4 mA
See graph on pg.4.
+27.5 dBm
−65 to 150°C
−2.5
–
–
mA
Power Dissipation, CW (PD)
CW Input Power (PIN)
Storage Temperature
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
1. To be adjusted to desired IDQ
Note:
1. Pulse (20% Duty Cycle, 100 µs Width)
Measured Load Pull Performance – Power Tuned1
Test conditions unless otherwise noted: T = 25°C, Pulse (20% Duty Cycle, 100 µs Width).
Typical Values
Parameter
Units
GHz
V
Frequency, F
5
6
8
9
10
Drain Voltage, VD
Drain Bias Current, IDQ
32
32
32
32
32
100
100
100
100
100
mA
Output Power at 3dB
compression, P3dB
43.8
43.7
43.4
43.1
42.8
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
Gain at 3dB compression, G3dB
50.7
13.4
50.1
11.9
44.6
8.1
37.0
6.5
35.4
5.7
%
dB
Notes:
1. Characteristic Impedance, Zo = 15 Ω.
Measured Load Pull Performance – Efficiency Tuned1
Test conditions unless otherwise noted: T = 25°C, Pulse (20% Duty Cycle, 100 µs Width).
Parameter
Frequency, F
Typical Values
Units
GHz
V
5
6
8
9
10
Drain Voltage, VD
Drain Bias Current, IDQ
32
32
32
32
32
100
100
100
100
100
mA
Output Power at 3dB
compression, P3dB
42.4
42.6
42.5
42.2
42.4
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
60.0
14.5
58.0
12.4
51.3
8.8
45.4
7.3
39.8
6.1
%
Gain at 3dB compression, G3dB
dB
Notes:
1. Characteristic Impedance, Zo = 15 Ω.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Thermal and Reliability Information - CW (1)
Parameter
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θJC)
Test Conditions
Value
5.9
Units
ºC/W
°C
PDISS = 30.2 W, Tbaseplate = 85°C
PDISS = 25.5 W, Tbaseplate = 85°C
PDISS = 20.2 W, Tbaseplate = 85°C
PDISS = 15.1 W, Tbaseplate = 85°C
Channel Temperature, TCH
263
5.6
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θJC)
°C/W
°C
Channel Temperature, TCH
227
5.2
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θJC)
ºC/W
°C
Channel Temperature, TCH
191
5.0
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θJC)
ºC/W
°C
Channel Temperature, TCH
160
Notes:
1. Assumes eutectic attach using 1.5mil thick 80/20 AuSn mounted to a 10 mm x 10 mm x 40 mil CuMo Carrier Plate.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Thermal and Reliability Information - Pulsed (1)
Parameter
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θJC)
Test Conditions
PDISS = 30.2 W, Tbaseplate = 85°C
Pulse Width = 100 uS
Value
2.73
167
Units
ºC/W
°C
Duty Cycle = 10%
Channel Temperature, TCH
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θJC)
PDISS = 25.2 W, Tbaseplate = 85°C
Pulse Width = 100 uS
Duty Cycle = 10%
2.68
152
°C/W
°C
Channel Temperature, TCH
Notes:
1. Assumes eutectic attach using 1.5mil thick 80/20 AuSn mounted to a 10 mm x 10 mm x 40 mil CuMo Carrier Plate.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Maximum Channel Temperature
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Measured Load Pull Contours
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
5GHz, Load-pull
Zs(1fo) = 1.83-6.84i
Zs(2fo) = 2.29-8.3i
Zs(3fo) = 10.33-12.55i
• Max Power is 43.8dBm
at Z = 5.975-0.536i
= -0.2505-0.0419i
• Max Gain is 14.7dB
at Z = 2.672+4.52i
= -0.4002+0.4995i
• Max PAE is 60%
at Z = 3.727+2.784i
= -0.3994+0.2838i
14.6
59.9
43.2
43.4
43.6
13.6
13.1
51.9
50.9
49.9
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Measured Load Pull Contours
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
6GHz, Load-pull
Zs(1fo) = 2.43-9.2i
Zs(2fo) = 11.32-20.24i
Zs(3fo) = 34.28-9.76i
• Max Power is 43.7dBm
at Z = 5.888-1.631i
= -0.2457-0.1279i
• Max Gain is 12.9dB
at Z = 2.795+1.738i
= -0.5348+0.2085i
• Max PAE is 58.1%
at Z = 3.03-0.135i
= -0.5348-0.0159i
43.2
12.5
57.7
43.4
50.7
51.7
49.7
12
43.6
11.5
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Measured Load Pull Contours
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
8GHz, Load-pull
Zs(1fo) = 5.67-14.12i
Zs(2fo) = 44.89-10.01i
• Max Power is 43.4dBm
at Z = 5.109-6.785i
= -0.1015-0.4947i
• Max Gain is 8.9dB
at Z = 2.137-3.98i
= -0.4879-0.4879i
• Max PAE is 51.3%
at Z = 3.212-5.043i
= -0.3213-0.5043i
44.1
45.1
46.1
51.1
43.4
8.61
43.2
43
8.11
Power
Gain
7.61
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Measured Load Pull Contours
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
9GHz, Load-pull
Zs(1fo) = 9.64-19.26i
Zs(2fo) = 33.49-8.08i
• Max Power is 43.1dBm
at Z = 5.326-9.192i
= 0.0402-0.5756i
• Max Gain is 7.6dB
at Z = 2.566-6.165i
= -0.2828-0.6294i
• Max PAE is 45.4%
at Z = 2.921-7.488i
= -0.1587-0.6715i
6.34
6.84
38.7
37.7
7.34
36.7
42.6
42.8
43
Power
Gain
44.7
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Measured Load Pull Contours
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
10GHz, Load-pull
Zs(1fo) = 9.08-18.68i
• Max Power is 42.8dBm
Zs(2fo) = 23.71+14.99i
at Z = 6.424-12.152i
= 0.2131-0.5822i
• Max Gain is 6.3dB
at Z = 3.593-10.248i
= 0.0619-0.7073i
• Max PAE is 39.9%
at Z = 4.372-12.088i
= 0.185-0.6855i
4.84
42.4
42.6
5.34
42.8
34.7
35.7
36.7
5.84
Power
Gain
39.7
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Measured Load Pull Contours
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
12GHz, Load-pull
Zs(1fo) = 67.13-19.6i
• Max Power is 36.5dBm
at Z = 30.8-18.712i
= 0.4387-0.2293i
• Max Gain is 5.9dB
at Z = 14.522-21.734i
= 0.341-0.4852i
4.93
• Max PAE is 38.2%
at Z = 18.929-24.441i
= 0.4179-0.4193i
31.1
32.1
33.1
5.43
36.3
36.1
35.9
38.1
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Typical Measured Performance – Load-Pull Drive-up
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 25 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Typical Measured Performance – Load-Pull Drive-up
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 25 mA, T = +25°C, Pulse (10% Duty Cycle, 100 µs Width).
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
S-Parameters Of 9 – 10 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 140 mA, T = +25°C
S21
S11
30
0
20
10
0
-2
-4
-10
-20
-30
-40
-50
-6
-8
-10
-12
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20
Frequency [GHz]
Frequency [GHz]
Stability Factor12
S22
0
-5
3
2.5
2
-10
-15
-20
1.5
1
0.5
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency [GHz]
Frequency [GHz]
Notes:
1. The EVB is stable at -40°C and 10:1 VSWR at the output.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Power Driveup Performance Over Temperatures Of 9 – 10 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 140 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
DEFF3dB vs. Frequency vs. Temperature
P3dB vs. Frequency vs. Temperature
25
23
21
19
17
15
13
11
9
60
55
50
45
40
35
30
25
20
25°C
-40°C
85°C
25°C
-40°C
85°C
7
5
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
G3dB vs. Frequency vs. Temperature
PDISS3dB vs. Frequency vs. Temperature
15
14
13
12
11
10
9
8
7
6
5
40
25°C
-40°C
85°C
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
25°C
-40°C
85°C
4
3
2
1
0
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
Notes:
1. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output
matching network.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Power Driveup Performance Of 9 – 10 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 140 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
P3dB vs. Frequency @ 25°C
DEFF3dB vs. Frequency @ 25°C
25
23
21
19
17
15
13
11
9
60
55
50
45
40
35
30
25
20
7
5
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
PDISS3dB vs. Frequency @ 25°C
G3dB vs. Frequency @ 25°C
15
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
Frequency [GHz]
Frequency [GHz]
Notes:
1. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output
matching network.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
S-Parameters Of 2.7 – 3.3 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C
S21
S11
20
16
12
8
0
-5
-10
-15
-20
-25
-30
-35
4
0
-4
-8
-12
-16
-20
-24
-28
-32
-36
-40
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
Frequency [GHz]
Frequency [GHz]
K-Factor
S22
0
-5
3
2.5
2
-10
-15
-20
-25
-30
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
0.5
1
1.5
2
2.5
3
3.5
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
Frequency [GHz]
Frequency [GHz]
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Power Driveup Performance Of 2.7 – 3.3 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
G3dB vs. Frequency
P3dB vs. Frequency
18
17
16
15
14
13
12
11
10
30
29
28
27
26
25
24
23
22
21
20
2.7
2.8
2.9
3
3.1
3.3
3.4
Frequency [GHz]3.2
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
Frequency [GHz]
DEFF3dB vs. Frequency
PDISS3dB vs. Frequency
90
85
80
75
70
65
60
55
50
45
40
21
19
17
15
13
11
9
7
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
Frequency [GHz]
Frequency [GHz]
Notes:
1. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output
matching network.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
S-Parameters Of 3.1 – 3.5 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C
S21
S11
20
16
12
8
0
-2
-4
4
0
-6
-4
-8
-8
-12
-16
-20
-24
-28
-32
-36
-40
-10
-12
-14
-16
-18
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
Frequency [GHz]
Frequency [GHz]
K-Factor
S22
0
-5
3
2.5
2
-10
-15
-20
-25
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
0.5
1
1.5
2
2.5
3
3.5
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
Frequency [GHz]
Frequency [GHz]
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Power Driveup Performance Of 3.1 – 3.5 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
G3dB vs. Frequency
P3dB vs. Frequency
18
17
16
15
14
13
12
11
10
25
24
23
22
21
20
19
18
17
16
15
3
3.1
3.2
3.3
3.4
3.5
3.6
3
3.1
3.2
3.3
3.4
3.5
3.6
Frequency [GHz]
Frequency [GHz]
DEFF3dB vs. Frequency
PDISS3dB vs. Frequency
90
85
80
75
70
65
60
55
50
45
40
20
18
16
14
12
10
8
6
4
2
0
3
3.1
3.2
3.3
3.4
3.5
3.6
3
3.1
3.2
3.3
3.4
3.5
3.6
Frequency [GHz]
Frequency [GHz]
Notes:
1. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output
matching network.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
S-Parameters Of 4 – 5 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Power Driveup Performance Of 4 – 5 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
Notes:
1. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output
matching network.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
21 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
S-Parameters Of 5 – 6 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Power Driveup Performance Of 5 – 6 GHz EVB
Test Conditions: VDꢁ=ꢁ+32ꢁV, IDQ = 100 mA, T = +25°C, Pulse (20% Duty Cycle, 100 µs Width).
Notes:
1. The dissipation power is conservative because it is specified at DUT only without accounting for the loss of the output
matching network.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
23 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
9 – 10 GHz Application Circuit - Schematic
Board material is RO4003C 0.008” thickness with 1oz copper cladding. Overall EVB size is 1.5” x 2”.
9 – 10 GHz Application Circuit - Bill Of material
Description
Ref. Des.
C1
C2
C6
C7
C8
C9
C12
C16
R1
R8, R9
L1
Manufacturer
AVX Corporation
Johanson Technology
American Technical Ceramics C0805C105K5RACTU
American Technical Ceramics 600S1R0AT250XT
American Technical Ceramics 600S5R6BW250XT
American Technical Ceramics 600S101JT250XT
American Technical Ceramics 600L0R9AT200T
Panasonic Industrial Devices
Rohm Electronics
Vishay Americas Inc
Murata Electronics
Coilcraft, Inc.
Part Number
UQCL2A3R3BAT2A\500
Capacitor 3.3 pF, 200V, 0402
Capacitor 0.5 pF, 250V, 0603
Capacitor 1.0 uF, 50V, 0805
Capacitor 2.2 pF, 250V, 0603
Capacitor 5.6 pF, 250V, 0603
Capacitor 100 pF, 250V, 0603
Capacitor 0.9 pF, 200V, 0402
Capacitor 220 uF, 50V, 10 mm
Resistor, 47 Ohm, 0603
251R14S0R5AV4T
EEEFK1H221P
KTR03EZPF47R0
CRCW060333R2FKTA
LQW15AN3N3B80D
0402CS-1N8XJEW
Resistor, 33.2 Ohm, 0603
Inductor 3.3 nH, 0402
Inductor 1.8 nH, 0402
L2
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
24 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
2.7 – 3.3 GHz Application Circuit - Schematic
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2.5” x 2”.
2.7 – 3.3 GHz Application Circuit - Bill Of material
Description
Ref. Des.
C1
C2
C4, C12
C5, C8
C6, C9
C11, C13
C14
R1
R5, R6, R8
R7
L1
L2
Manufacturer
Part Number
Capacitor 10 pF, 250V, 0603
Capacitor 1.5 pF, 250V, 0603
Capacitor 2.2 pF, 250V, 0603
Capacitor 100 pF, 200V, 0603
Capacitor 0.01 uF, 50V, 0603
Capacitor 1 uF, 50V, 1206
Capacitor 47 uF, 80V, 10 mm
Resistor, 47 Ohm, 0603
Resistor, 33.2 Ohm, 0603
Resistor, 0 Ohm, 0603
American Technical Ceramics 600S100JT250XT
American Technical Ceramics 600S1R5AT250X
American Technical Ceramics 600S2R2BT250T
Capax Technologies
Kemet
TDK Singapore (PTE) LTD
Panasonic Industrial Devices
Rohm Electronics
Vishay Americas Inc
Vishay Americas Inc
Coilcraft, Inc.
0603G101J201S
C0603C103K5RACTU
C3216X7R1H105K160AB
EEETG1K470UP
KTR03EZPF47R0
CRCW060333R2FKTA
CRCW06030000Z0EA
0603CS-5N6XJEW
1606-6GLC
Inductor 5.6 nH, 0603
Inductor 5.6 nH, 1606
Coilcraft, Inc.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
25 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
3.1 – 3.5 GHz Application Circuit - Schematic
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2.5” x 2”.
3.1 – 3.5 GHz Application Circuit - Bill Of material
Description
Ref. Des.
Manufacturer
Part Number
Capacitor 0.7 pF, 250V, 0603
Capacitor 1 pF, 250V, 0603
Capacitor 2.2 pF, 250V, 0603
Capacitor 100 pF, 200V, 0603
Capacitor 0.01 uF, 50V, 0603
Capacitor 0.1 uF, 50V, 0603
Capacitor 1 uF, 50V, 10 mm
Capacitor 100 uF, 80V, 8 mm
Resistor, 0 Ohm, 0603
C1
C2
C3
C4, C9
C5, C10
C6, C11
C13
C14
R1
American Technical Ceramics 600S0R7AT250XT
American Technical Ceramics 600S1R0AT250XT
American Technical Ceramics 600S2R2BT250T
Capax Technologies
Kemet
Kemet
Taiyo Yuden PTE LTD
Panasonic Industrial Devices
Vishay Americas Inc
0603G101J201S
C0603C103K5RACTU
C0603C104J5RACTU
UMK107AB7105KA
EEE-1HA101UAP
CRCW06030000Z0EA
R2, R3, R4,
R5, R6, R7, R8
L1
Resistor, 50 Ohm, 0603
Vishay Americas Inc
CRCW06030000Z0EA
Inductor 5.6 nH, 0603
Inductor 5.6 nH, 1606
Coilcraft, Inc.
Coilcraft, Inc.
0603CS-5N6XJEW
1606-6GLC
L2
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
26 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
4 – 5 GHz Application Circuit - Schematic
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 1.5” x 2”.
4 – 5 GHz Application Circuit - Bill Of material
Description
Ref. Des.
Manufacturer
Part Number
Capacitor 2.4 pF, 250V, 0603
Capacitor 5.6 pF, 250V, 0603
Capacitor 2.2 pF, 250V, 0603
Capacitor 0.5 pF, 250V, 0603
Capacitor 100 pF, 250V, 0603
Capacitor 0.1 uF, 50V, 0603
Capacitor 1.6 pF, 250V, 0603
Capacitor 1.0 uF, 100V, 0805
Capacitor 33 uF, 80V, 10 mm
Resistor, 2.7 Ohm, 0603
Resistor, 820 Ohm, 0603
Resistor, 22 Ohm, 0603
C1
C2
C3
C4
C5, C8
C7
C11
C12, C13
C14
R1
American Technical Ceramics 600S2R4AT250XT
American Technical Ceramics 600S5R6BT250XT
American Technical Ceramics 600S2R2BT250T
Johanson
American Technical Ceramics 600S101JT250XT
Kemet C0603C104J5RACTU
American Technical Ceramics 600S1R6BT250XT
251R14S0R5AV4T
TDK Singapore (PTE) LTD
Panasonic Industrial Devices
Panasonic Industrial Devices
KOA Speer Electronics, Inc.
Panasonic Industrial Devices
Kamaya, Inc
C2012X7S2A105M125AB
EEE-FK1K330P
ERJ-6RQF2R7V
RK73B1JTTD821J
ERJ3GEYJ220V
RMC1/16JPTP
R2
R3
R4
Resistor, 0 Ohm, 0603
Resistor, 33 Ohm, 0603
Inductor 3.9 nH, 0603
R5
L1
KOA Speer Electronics, Inc.
Coilcraft, Inc.
RK73B1JTTD330J
0603HC-3N9XJRW
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
27 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
5 – 6 GHz Application Circuit - Schematic
Board material is RO4003C 0.008” thickness with 1oz copper cladding. Overall EVB size is 1” x 1”.
5 – 6 GHz Application Circuit - Bill Of material
Description
Ref. Des.
Manufacturer
Part Number
Capacitor 0.5 pF, 200V, 0402
Capacitor 5.6 pF, 250V, 0603
Capacitor 1.2 pF, 250V, 0603
Capacitor 1.2 pF, 200V, 0402
Capacitor 100 pF, 250V, 0603
Capacitor 0.01 uF, 50V, 0603
Capacitor 0.1 uF, 50V, 10 mm
Resistor, 2.7 Ohm, 0805
Resistor, 820 Ohm, 0603
Resistor, 10 Ohm, 0603
C1
C2
C3
C4
C5, C10
C6, C9
C7
R1
R2
American Technical Ceramics 600L0R5AT200T
American Technical Ceramics 600S5R6BT250XT
American Technical Ceramics 600S1R2BT250XT
AVX Corporation
UQCL2A1R2BAT2A\500
American Technical Ceramics 600S101JT250XT
Kemet
Kemet
C0603T103K5RALTM
C0603C104J5RACTU
ERJ-6RQF2R7V
RK73B1JTTD821J
RK73B1JTTD100J
RK73B1JTTD821J
RMC1/16JPTP
Panasonic Industrial Devices
KOA Speer Electronics, Inc.
KOA Speer Electronics, Inc.
KOA Speer Electronics, Inc.
Kamaya, Inc
R3
R2
R4
Resistor, 820 Ohm, 0603
Resistor, 0 Ohm, 0603
R5, R6, R7,
R9, R10
L1
Resistor, 33 Ohm, 0603
Inductor 8.2 nH, 0603
KOA Speer Electronics, Inc.
Murata Electronics
RK73B1JTTD330J
LQP18MN8N2C02D
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
28 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Mechanical Drawing1, 2, 3
Note:
1. All dimensions are in millimeters.
2. Unless otherwise noted, all dimension tolerances are ± 0.127 mm.
3. This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with
both lead-free (maximum 260°C reflow temperature) and tin-lead (maximum 245°C reflow temperature)
soldering process.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
29 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Pin Configuration and Description1
Note 1: The TGF2978-SM will be marked with the “2978” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the MZZZ” is the production lot number.
17
20
19
18
1
16
15
14
2
3
4
5
13
12
6
11
7
8
9
10
Load Pull Reference Planes
Pin
Symbol
Description
Drain voltage / RF Output to be matched to 50 ohms; see EVB Layout on page 19 as
an example.
12 - 15
VD / RF OUT
Gate voltage / RF Input to be matched to 50 ohms; see EVB Layout on page 19 as an
example.
3 - 4
VG / RF IN
1 - 2, 5 – 11, 16 -
20
N/C
Not connected
Back side
Source
Source connected to ground
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Model
A model is available for download from Modelithics (at http://www.modelithics.com/mvp/Qorvo&tab=3) by approved Qorvo
customers. The model is compatible with the industry’s most popular design software including Agilent ADS and National
Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free license before
being granted the download.
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) not recommended.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
• Force, time, and ultrasonics are critical bonding parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
31 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Disclaimer
GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.
Bias Procedure
Bias-Up Procedure
Bias-Down Procedure
1. Set VG to –5 V.
1. Turn off RF signal.
2. Set ID limit to 150 mA.
3. Apply +32 V to VD.
4. Slowly adjust VG until ID is set to 100 mA.
5. Set ID limit to 0.6 A.
6. Apply RF.
2. Turn off VD.
3. Wait two (2) seconds to allow drain capacitor to discharge.
4. Turn off VG.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
32 of 33
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TGF2978-SM
®
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
Handling Precautions
Parameter
Rating
Standard
ANSI/ESDA/JEDEC Standard JS-001
ESDꢁ–ꢁHuman Body Model (HBM)
Class 1A (250 V)
ESDꢁ–ꢁCharged Device Model (CDM) Class C6 (2000 V) ANSI/ESDA/JEDEC Standard JS-002
MSLꢁ–ꢁMoisture Sensitivity Level
N/A
IPC/JEDEC Standard J-STD-020
Caution!
ESD-Sensitive Device
Not HAST compliant.
Solderability
Compatible with gold/tin (320°C maximum reflow temperature) soldering processes.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. B, February 11, 2020 | Subject to change without notice
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