1N5822-B [RECTRON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;型号: | 1N5822-B |
厂家: | RECTRON SEMICONDUCTOR |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 功效 瞄准线 二极管 |
文件: | 总2页 (文件大小:24K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5820
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5822
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes
FEATURES
* Low switching noise
* Low forward voltage drop
* High current capability
* High switching capabitity
* High surge capability
* High reliability
DO-201AD
MECHANICAL DATA
* Case: Molded plastic
(
)
.052 1.3
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
DIA.
(
)
.048 1.2
1.0 (25.4)
MIN.
* Weight: 1.18 grams
.375 (9.5)
.335 (8.5)
(
)
.220 5.6
DIA.
(
)
.197 5.0
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
1N5820
20
1N5821
30
1N5822
40
UNITS
Volts
V
V
RRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
RMS
14
20
21
30
28
40
Volts
Volts
V
DC
O
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at TL
= 95oC
I
3.0
80
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Storage and Operating Temperature Range
R θ J A
28
250
0C/W
pF
0 C
CJ
T
J
, TSTG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
1N5820
.475
1N5821
.500
1N5822
.525
UNITS
Volts
Maximum Instantaneous Forward Voltage at 3.0A DC (Note 1)
Maximum Instantaneous Forward Voltage at 9.4A DC (Note 1)
V
V
F
F
.850
.900
.950
Volts
2.0
Maximum Average Reverse Current at
Rated DC Blocking Voltage (Note 1)
@T
@T
A
A
= 25oC
= 100oC
mAmps
I
R
20
NOTES : 1. Measured at Pulse Width 300 uS, Duty 2%.
2002-11
2. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.
3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES 1N5820 THRU 1N5822
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
4
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
10
3
T
= 125
J
2
1.0
Single Phase
Half Wave 60Hz
Resistive or
1
Inductive Load
T
= 75
= 25
J
0.375" (9.5mm) Lead Length
0
.1
.01
0
25
50
75
100 125 150 175
LEAD TEMPERATURE, (
)
T
J
FIG. 3 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
80
1N5820
1N5821~1N5822
70
60
50
40
30
20
.001
T
= 75
L
8.3ms Single Half Sine-Wave
(JEDEC Method)
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
10
1
2
5
10
20
50 100
NUMBER OF CYCLE AT 60Hz
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
1000
800
600
20
10
T = 25
J
400
200
T
= 25
J
100
80
60
Pulse Width = 300uS
1% Duty Cycle
1.0
1N5820
1N5821
1N5822
20
10
.1
.2
.1
.4
1.0
4
10
40
.3
.4
.5
.6
.7
.8
.9
REVERSE VOLTAGE, ( V )
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
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