1N5822-B [RECTRON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;
1N5822-B
型号: 1N5822-B
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

功效 瞄准线 二极管
文件: 总2页 (文件大小:24K)
中文:  中文翻译
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1N5820  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
1N5822  
SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* High current capability  
* High switching capabitity  
* High surge capability  
* High reliability  
DO-201AD  
MECHANICAL DATA  
* Case: Molded plastic  
(
)
.052 1.3  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
DIA.  
(
)
.048 1.2  
1.0 (25.4)  
MIN.  
* Weight: 1.18 grams  
.375 (9.5)  
.335 (8.5)  
(
)
.220 5.6  
DIA.  
(
)
.197 5.0  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1N5820  
20  
1N5821  
30  
1N5822  
40  
UNITS  
Volts  
V
V
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RMS  
14  
20  
21  
30  
28  
40  
Volts  
Volts  
V
DC  
O
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
.375” (9.5mm) lead length at TL  
= 95oC  
I
3.0  
80  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Amps  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance (Note 3)  
Storage and Operating Temperature Range  
R θ J A  
28  
250  
0C/W  
pF  
0 C  
CJ  
T
J
, TSTG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
1N5820  
.475  
1N5821  
.500  
1N5822  
.525  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 3.0A DC (Note 1)  
Maximum Instantaneous Forward Voltage at 9.4A DC (Note 1)  
V
V
F
F
.850  
.900  
.950  
Volts  
2.0  
Maximum Average Reverse Current at  
Rated DC Blocking Voltage (Note 1)  
@T  
@T  
A
A
= 25oC  
= 100oC  
mAmps  
I
R
20  
NOTES : 1. Measured at Pulse Width 300 uS, Duty 2%.  
2002-11  
2. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.  
3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
(
)
RATING AND CHARACTERISTIC CURVES 1N5820 THRU 1N5822  
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE  
4
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS  
10  
3
T
= 125  
J
2
1.0  
Single Phase  
Half Wave 60Hz  
Resistive or  
1
Inductive Load  
T
= 75  
= 25  
J
0.375" (9.5mm) Lead Length  
0
.1  
.01  
0
25  
50  
75  
100 125 150 175  
LEAD TEMPERATURE, (  
)
T
J
FIG. 3 - MAXIMUM NON-REPETITIVE  
FORWARD SURGE CURRENT  
80  
1N5820  
1N5821~1N5822  
70  
60  
50  
40  
30  
20  
.001  
T
= 75  
L
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
0
20 40 60 80 100 120 140  
PERCENT OF RATED PEAK  
REVERSE VOLTAGE, (%)  
10  
1
2
5
10  
20  
50 100  
NUMBER OF CYCLE AT 60Hz  
FIG. 5 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG. 4 - TYPICAL JUNCTION CAPACITANCE  
1000  
800  
600  
20  
10  
T = 25  
J
400  
200  
T
= 25  
J
100  
80  
60  
Pulse Width = 300uS  
1% Duty Cycle  
1.0  
1N5820  
1N5821  
1N5822  
20  
10  
.1  
.2  
.1  
.4  
1.0  
4
10  
40  
.3  
.4  
.5  
.6  
.7  
.8  
.9  
REVERSE VOLTAGE, ( V )  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
RECTRON  

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