BAV99 [RECTRON]
SMALL SIGNAL DIODE; 小信号二极管
| 型号： | BAV99 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SMALL SIGNAL DIODE |
| 文件： | 总2页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAV99
SMALL SIGNAL DIODE
FEATURES
* Silicon epitaxial planar diode
* Fast switching
* Surface mounting device
SOT-23
MECHANICAL DATA
(C)
(B)
(A)
(A)
* Epoxy : Device has UL flammability classification 94V-0
* Weight : apporx. 0.008g
(C)
(
)
)
(
)
.055 1.40
.028 0.70
(
(
)
.047 1.20
.020 0.50
(
)
.102 2.60
.094 (2.40)
R0.05
(
)
.002
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
.045 1.15
(
.033 0.85
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
UNITS
Volts
mA
BAV99
70
V
RRM
IF
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 oC
Repetitive Peak Forward Current at TA=25 oC
150
IFRM
500
mA
IFSM
Surge Forward Current at tp < 1 S, at TA=25 oC
Total Power Dissipation
1000
250
mA
PD
m W
0 C
T J
125
Junction Temperature
-65 to + 150
0 C
Storage Temperature Range
T
STG
2001-12
ELECTRICAL CHARACTERISTICS (At T
A
= 25oC unless otherwise noted)
SYMBOL
V(BR)R
Value
70
Unit
V
Testing Condition
CHARACTERISTICS
Reverse Breakdown Voltage
Ir=100uA
If=1mA
715
855
VF(1)
VF(2)
mV
mV
If=10mA
Forward Voltage
Reverse Current
1000
VF(3)
mV
IF=50mA
If=150mA
VF(4)
IR
1250
2.5
mV
uA
Vr=70V
1.5
6
pF
nS
Total Capacitance
Vr=0V,F=1MHZ
CT
Trr
Reverse Recovery Time
If=Ir=10mA,RL=100 ohm, measured at ir=1mA
CHARACTERISTIC CURVES
FIG. 1 - FORWARD CURRENT
& FORWARD VOLTAGE
FIG. 2 -
200
DIODE CAPACITANCE
500
400
300
100
60
40
20
10
6
4
200
100
0
2
1
.1
.2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
1600
FORWARD VOLTAGE,VF (mV )
0
400
800
1200
2000
RECTRON
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