BC557 [RECTRON]
PNP Silicon Planar Epitaxial Transistors; PNP硅平面外延晶体管
| 型号： | BC557 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | PNP Silicon Planar Epitaxial Transistors |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
PNP Silicon Planar Epitaxial Transistors
1
2
3
TO-92 SMD Package
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
SYMBOL
VCEO
VCES
VCBO
VEBO
IC
BC556
BC557
45
BC558
30
UNITS
DESCRIPTION
Collector Emitter Voltage
Collector Emmitter Voltage
Collector Base Voltage
65
V
V
V
V
80
50
30
80
50
5
100
200
200
200
30
5
5
Emitter Base Voltage
Collector Current Continuous
Peak
mA
ICM
IEM
IBM
mA
mA
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
Ptot
500
mW
Tamb = 25 oC
oC
Tstg
Tj
-55 to +150
150
Storge Temperature
Junction Temperature
oC
Thermal Resistance
From junction to ambient
oC/W
Rth(j-a)
250
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BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics (Ta=25 oC unless otherwise specified)
TYP
SYMBOL TEST CONDITION
UNITS
MIN
MAX
DESCRIPTION
Collector Emitter Voltage
IC = 2mA, IB = 0
IC = 100uA, IE = 0
IE = 100uA, IC = 0
VCEO
BC556
BC557
BC558
65
45
30
V
Collector Base Voltage
VCBO
BC556
BC557
BC558
80
50
30
V
VEBO
ICBO
Emitter Base Voltage
Collector Cut off Current
5
V
nA
uA
V
CB = 30V, IE = 0
15
4
VCB = 30V, IE = 0, Tj = 150oC
Collector Cut off Current
ICES
VCE = 80V
VCE = 50V
VCE = 30V
BC556
BC557
BC558
BC556
BC557
BC558
0.20
0.20
0.20
15
15
nA
nA
nA
uA
uA
uA
15
VCE = 80V, Tj = 125oC
VCE = 50V, Tj = 125oC
VCE = 30V, Tj = 125oC
IC = 2mA, VCE = 5V
4
4
4
0.66
Base Emitter On Voltage
0.55
0.70
0.82
0.30
0.65
VBE(on)
VCE(Sat)
VBE(Sat)
hFE
V
V
V
IC = 10mA, VCE = 5V
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VCE = 5V, IC = 10uA
A
0.09
0.25
0.70
0.90
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
90
B
C
150
270
VCE = 5V, IC = 2mA
BC556
BC557/BC558
A
B
C
75
75
110
200
420
475
800
220
450
800
180
290
500
VCE = 5V, IC = 100mA
A
B
C
120
200
400
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2 of 3
BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics (Ta=25 oC unless otherwise specified)
DESCRIPTION
TYP
SYMBOL TEST CONDITION
UNITS
MIN
DYNAMICS CHARACTERISTICS
Transition Frequency
Collector output Capacitance
Noise Figure
IC = 10mA, VCE = 5V, f = 100MHZ
fT
Ccbo
NF
MHZ
pF
dB
150
2
VCB = 10V, f = 1MHZ
6
10
VCE = 5V, IC = 0.2mA
RS= 2k ohm, f = 1KHZ, B= 200HZ
VCE = 5V, IC = 2mA, f= 1kHZ
Small Signal Current Gain
hfe
A
220
330
600
B
C
VCE = 5V, IC = 2mA, f= 1kHZ
A
B
C
VCE = 5V, IC = 2mA, f= 1kHZ
A
B
C
Input Impedance
hie
2.7
4.5
8.7
1.6
3.2
6.0
4.5
8.5
15
k ohm
x10
Voltage Feedback
Output Admittance
hre
hoe
1.5
2.0
3.0
VCE = 5V, IC = 2mA, f= 1kHZ
A
B
C
18
30
60
30
60
110
u MHO
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