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BC557-BULK [VISHAY]

TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal;
BC557-BULK
型号： BC557-BULK
厂家： VISHAY    VISHAY
描述：

TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
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BC556 to BC558  
VISHAY  
Vishay Semiconductors  
Small Signal Transistors (PNP)  
Features  
C
1
• PNP Silicon Epitaxial Planar Transistors for  
switching and AF amplifier applications.  
2
• These transistors are subdivided into three groups  
A, B, and C according to their current gain. The  
type BC556 is available in groups A and B, how-  
ever, the types BC557 and BC558 can be supplied  
in all three groups. As complementary types, the  
NPN transistors BC546...BC548 are recom-  
mended.  
B
3
2
1
E
3
18979  
• On special request, these transistors are also  
manufactured in the pin configuration TO-18.  
Mechanical Data  
Case: TO-92 Plastic case  
Weight: approx. 177 mg  
Packaging Codes/Options:  
BULK / 5 k per container 20 k/box  
TAP / 4 k per Ammopack 20 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
Symbol  
Value  
Unit  
V
Collector - base voltage  
BC556  
BC557  
BC558  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
- V  
80  
50  
30  
30  
80  
50  
30  
30  
65  
45  
30  
30  
5
CBO  
CBO  
CBO  
CBO  
CES  
CES  
CES  
CES  
CEO  
CEO  
CEO  
CEO  
EBO  
V
V
V
Collector - emitter voltage  
BC556  
BC557  
BC558  
V
V
V
V
V
V
V
V
Emitter - base voltage  
Collector current  
V
- I  
100  
200  
200  
mA  
mA  
mA  
mW  
mA  
C
Peak colector current  
Peak emitter current  
Power dissipation  
- I  
- I  
P
CM  
EM  
tot  
1)  
T
= 25 °C  
amb  
500  
200  
Peak base current  
- I  
BM  
1)  
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
Document Number 85133  
Rev. 1.2, 19-Aug-04  
www.vishay.com  
1
BC556 to BC558  
Vishay Semiconductors  
VISHAY  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
θJA  
250  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
Electrical DC Characteristics  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ  
Max  
220  
Unit  
Small signal current gain  
(current gain group A)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
h
h
h
h
h
h
h
CE  
C
fe  
fe  
fe  
ie  
ie  
ie  
Small signal current gain  
(current gain group B)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
330  
600  
4.5  
8.5  
15  
CE  
C
Small signal current gain  
(current gain group C)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
CE C  
Input impedance (current gain  
group A)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
1.6  
3.2  
6
2.7  
4.5  
8.7  
18  
kΩ  
kΩ  
kΩ  
µS  
µS  
µS  
CE  
C
Input impedance (current gain  
group B)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
CE C  
Input impedance (current gain  
group C)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
CE C  
Output admittance (current gain - V = 5 V, - I = 2 mA, f = 1 kHz  
30  
CE  
C
oe  
oe  
oe  
group A)  
Output admittance (current gain - V = 5 V, - I = 2 mA, f = 1 kHz  
h
h
30  
60  
CE  
C
group B)  
Output admittance (current gain - V = 5 V, - I = 2 mA, f = 1 kHz  
60  
110  
CE  
C
group C)  
-4  
Reverse voltage transfer ratio  
(current gain group A)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
h
h
h
CE  
C
re  
re  
re  
1.5 x 10  
-4  
Reverse voltage transfer ratio  
(current gain group B)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
CE C  
2 x 10  
-4  
Reverse voltage transfer ratio  
(current gain group C)  
- V = 5 V, - I = 2 mA, f = 1 kHz  
CE C  
3 x 10  
90  
DC current gain (current gain  
group A)  
- V = 5 V, - I = 10 µA  
h
h
h
h
h
h
h
h
h
CE  
C
FE  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
DC current gain (current gain  
group B)  
- V = 5 V, - I = 10 µA  
150  
270  
180  
290  
500  
120  
200  
400  
CE  
C
DC current gain (current gain  
group C)  
- V = 5 V, - I = 10 µA  
CE C  
DC current gain (current gain  
group A)  
- V = 5 V, - I = 2 mA  
110  
200  
420  
220  
450  
800  
CE  
C
DC current gain (current gain  
group B)  
- V = 5 V, - I = 2 mA  
CE C  
DC current gain (current gain  
group C)  
- V = 5 V, - I = 2 mA  
CE C  
DC current gain (current gain  
group A)  
- V = 5 V, - I = 100 mA  
CE C  
DC current gain (current gain  
group B)  
- V = 5 V, - I = 100 mA  
CE C  
DC current gain (current gain  
group C)  
- V = 5 V, - I = 100 mA  
CE C  
Collector saturation voltage  
- I = 10 mA, - I = 0.5 mA  
V
V
80  
300  
650  
mV  
mV  
C
B
CEsat  
CEsat  
- I = 100 mA, - I = 5 mA  
250  
C
B
www.vishay.com  
2
Document Number 85133  
Rev. 1.2, 19-Aug-04  
BC556 to BC558  
VISHAY  
Vishay Semiconductors  
Parameter  
Test condition  
- I = 10 mA, - I = 0.5 mA  
Part  
Symbol  
Min  
Typ  
700  
Max  
Unit  
mV  
Base saturation voltage  
V
V
C
B
BEsat  
BEsat  
- I = 100 mA, - I = 5 mA  
900  
660  
mV  
mV  
mV  
nA  
nA  
nA  
µA  
µA  
µA  
µA  
C
B
Base - emiter voltage  
- V = 5 V, - I = 2 mA  
V
V
600  
700  
800  
15  
15  
15  
4
CE  
C
BE  
BE  
- V = 5 V, - I = 10 mA  
CE  
C
Collector-emitter cut-off current - V = 80 V  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC559  
I
I
I
I
I
I
I
0.2  
0.2  
0.2  
CE  
CES  
CES  
CES  
CES  
CES  
CES  
CES  
- V = 50 V  
CE  
- V = 30 V  
CE  
- V = 80 V, T = 125 °C  
CE  
j
- V = 50 V, T = 125 °C  
4
CE  
j
- V = 30 V, T = 125 °C  
4
CE  
j
4
Electrical AC Characteristics  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ  
150  
Max  
Unit  
Gain bandwidth product  
- V = 5 V, - I = 10 mA,  
f
T
MHz  
CE  
C
f = 100 MHz  
Collector - base capacitance  
Noise figure  
- V = 10 V, f = 1 MHz  
C
6
pF  
dB  
CB  
CBO  
- V = 5 V, - I = 200 µA,  
BC556  
F
2
10  
CE  
C
R
= 2 kΩ, f = 1 kHz,  
G
∆f = 200 Hz  
BC557  
BC558  
BC559  
BC559  
F
F
F
F
2
2
10  
10  
4
dB  
dB  
dB  
dB  
1
- V = 5 V, - I = 200 µA,  
1.2  
4
CE  
C
R
= 2 kΩ,  
G
f = (30 to 15000) Hz  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
mW  
500  
°C/W  
103  
400  
0.2  
0.1  
102  
r
thA  
0.05  
0.02  
0.01  
P
300  
200  
tot  
10  
1
0.005  
= 0  
t
p
t
p
T
ν
ν
=
100  
0
P
I
T
-1  
10  
10-5  
10-3  
10-1  
p
1
10-4  
10-2  
10  
102  
100  
200 °C  
10-6  
0
s
t
T
19181  
amb  
19182  
Figure 1. Admissible Power Dissipation vs. Ambient Temperature  
Figure 2. Pulse Thermal Resistance vs. Pulse Duration  
Document Number 85133  
Rev. 1.2, 19-Aug-04  
www.vishay.com  
3
BC556 to BC558  
Vishay Semiconductors  
VISHAY  
pF  
20  
103  
-V  
CE  
= 5 V  
T
= 25 °C  
amb  
100 °C  
h
T
= 25 °C  
C
C
102  
10  
1
FE  
amb  
CBO  
EBO  
- 50 °C  
C
EBO  
10  
C
CBO  
10-1  
1
10-2  
10  
102  
0
10 V  
1
0.1  
-I  
C
19183  
-V  
-V  
CBO,  
EBO  
19186  
Figure 3. DC Current Gain vs. Collector Current  
Figure 6. Collector Base Capacitance, Emitter base Capacitance  
vs. Bias Voltage  
nA  
V
104  
103  
0.5  
-I /-I = 20  
B
C
0.4  
-I  
CBO  
102  
10  
0.3  
CEsat  
-V  
0.2  
test voltage - V  
:
CBO  
T
= 100 °C  
amb  
equal to the given  
maximum value - V  
25 °C  
1
0.1  
0
CEO  
typical  
maximum  
-1  
10  
-50 °C  
100  
200 °C  
0
10-1  
1
102mA  
10  
T
j
19187  
-I  
19184  
C
Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature  
Figure 7. Collector Saturation Voltage vs. Collector Current  
mA  
2
102  
10  
-V  
CE  
= 5 V  
-V = 5 V  
CE  
T = 25 °C  
amb  
-I  
C
10  
10  
1
25 °C  
h
ie  
h
re  
1
T
= 100 °C  
-50 °C  
amb  
h
fe  
h
oe  
-1  
10  
-1  
10  
0
-1  
0.5  
1 V  
10  
1
10 mA  
19185  
-V  
BE  
19188  
-I  
C
Figure 5. Collector Current vs. Base-Emitter Voltage  
Figure 8. Relative h-Parameters vs. Collector Current  
www.vishay.com  
4
Document Number 85133  
Rev. 1.2, 19-Aug-04  
BC556 to BC558  
VISHAY  
Vishay Semiconductors  
MHz  
3
10  
T
= 25 °C  
= 10 V  
amb  
-V  
CE  
f
r
5 V  
2
10  
2 V  
10  
0.1  
1
100 mA  
10  
C
19189  
-I  
Figure 9. Gain-Bandwidth Product vs. Collector Current  
Document Number 85133  
Rev. 1.2, 19-Aug-04  
www.vishay.com  
5
BC556 to BC558  
Vishay Semiconductors  
VISHAY  
Packaging for Radial Taping  
± 2  
±2.7 ±±  
± ±  
Vers. Dim. "H"  
27 ± 0.5  
FSZ  
0.9 max  
5.08 ± 0.7  
+ 0.6  
4
± 0.2  
2.54  
- 0.±  
6.3 ± 0.7  
±2.7 ± 0.2  
Measure limit over 20 index - holes: ± ±  
±8787  
www.vishay.com  
6
Document Number 85133  
Rev. 1.2, 19-Aug-04  
BC556 to BC558  
VISHAY  
Vishay Semiconductors  
Package Dimensions in mm (Inches)  
4.6 (0.181)  
3.6 (0.142)  
max. 0.55 (0.022)  
2.5 (0.098)  
Bottom  
View  
18776  
Document Number 85133  
Rev. 1.2, 19-Aug-04  
www.vishay.com  
7
BC556 to BC558  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
8
Document Number 85133  
Rev. 1.2, 19-Aug-04  

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