BZM55C33-W [RECTRON]

Zener Diode,;


型号：	BZM55C33-W
厂家：	RECTRON SEMICONDUCTOR
描述：	Zener Diode,
文件：	总5页 (文件大小：454K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BZM55C2V4

-BZM55C47

SURFACE MOUNT ZENER DIODE

VOLTAGE RANGE 2.4 to 47 Volts POWER RATING 500 mWatts

FEATURES

* Saving space

Hermetic sealed parts

Electrical data identical with the devices BZT55 Series /

TZM Series

Fits onto SOD323/SOD110footprints

Very sharp reverse characteristic

Very high stability

Low noise

Available with tighter tolerances

Low reverse current level

Lead (Pb)-free component

Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Micro-MELF

.010 (0.25)

.006 (0.15)

MECHANICAL DATA

* Case: MicroMELF

* Weight: approx. 12mg

.079 (2.00)

.071 (1.80)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

<.043 ( 1.10)

Dimensions in inches and (millimeters)

MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )

RATINGS

SYMBOL

VALUE

500

UNITS

Power Dissipation @R <300 K/W

θJA

500

Terminal resistance (Mounted on epoxy-glass hard tissue,Fig.1)

θJA

K/W

300

175

Terminal resistance (35um copper clad,0.9mm2 copper area per electrode)

Max. Operating Temperature Range

K/W

^oC

θJL

^oC

-65 to +175

Storage Temperature Range

TSTG

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Forward Voltage at IF= 200mA

SYMBOL

MIN.

TYP.

MAX.

1.5

UNITS

Volts

2007-3

ELECTRICAL CHARACTERISTICS (@TA=25^OC unless otherwise specified)

Zener Voltage

Range¹⁾

Dynamic

Resistance

Test

Current

Temperature

Coefficient

Test

Current

Reverse Leakage Current

r_zjTat

I_ZT

f = 1kHz f = 1kHz

r_zjKat

I_R

Partnumber

V_Zat I_ZT

I_ZT

TK_VZ

%/K

I_ZK

at V_R

I_ZK

at T_ambat T_amb

= 25 °C = 150 °C

µA

min

2.28

2.5

2.8

3.1

3.4

3.7

max

2.56

2.9

3.2

3.5

3.8

4.1

4.6

min

- 0.09

- 0.08

-0.08

- 0.08

- 0.06

- 0.05

- 0.02

- 0.05

0.03

0.04

max

BZM55C2V4

BZM55C2V7

BZM55C3V0

BZM55C3V3

BZM55C3V6

BZM55C3V9

BZM55C4V3

BZM55C4V7

BZM55C5V1

BZM55C5V6

BZM55C6V2

BZM55C6V8

BZM55C7V5

BZM55C8V2

BZM55C9V1 *

BZM55C10 *

BZM55C11 *

BZM55C12 *

BZM55C13 *

BZM55C15 *

BZM55C16 *

BZM55C18 *

BZM55C20 *

BZM55C22 *

BZM55C24 *

BZM55C27 *

BZM55C30 *

BZM55C33 *

BZM55C36 *

BZM55C39 *

BZM55C43 *

BZM55C47 *

< 85

< 90

< 80

< 60

< 40

< 10

< 8

< 600

< 550

< 450

< 200

< 150

< 50

- 0.06

- 0.05

- 0.03

0.02

0.05

0.06

0.07

0.08

0.09

0.1

< 50

< 10

< 4

< 100

< 50

< 40

< 20

< 10

< 2

< 1

4.4

4.8

5.2

5.8

6.4

< 0.5

< 0.1

5.4

< 2

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

< 2

< 7

< 2

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

< 7

< 50

< 2

6.2

6.8

7.5

8.2

9.1

< 10

< 15

< 20

< 26

< 30

< 40

< 50

< 55

< 80

< 90

110

< 50

< 2

< 70

< 2

< 70

0.11

0.12

< 2

< 90

< 2

< 110

< 170

< 220

< 500

< 600

< 700

< 2

2.5

0.5

< 5

¹⁾t_p< 10 ms, T/t_p> 1000

^*)Additionnal measurement of Voltage group 9V1 to 47 at 95 % V_zmin<35 nA at T_j25 °C

RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 )

200

150

100

600

V_R=2V

T_J=25^OC

500

400

300

200

100

200

V , ZENER VOLTAGE(V)

, AMBIENT TEMPERATURE(^OC)

Figure1 Total Power Dissipation vs.

Figure2 Diode Capacitance vs. Zener Voltage

Ambient Temperature

1000

100

1.3

1.2

T_J=25^OC

V_Ztn=V_Zt

V_Z(25 C)

TK_VZ=10 X 10^-4/K

8 X 10^-4/K

I_Z=5mA

1.1

1.0

6 X 10^-4/K

4 X 10^-4/K

2 X 10^-4/K

-2 X 10^-4/K

-4 X 10^-4/K

0.9

0.8

-60

T JUNCTION TEMPERATURE ( C)

120

180

240

, ZENER VOLTAGE(V)

Figure3 Typical Change of Working Voltage under

Operating Conditions at T_A=25^OC

Figure4 Typical Change of Working Voltage vs.

Junction Temperature

100

I_Z=5mA

0.1

0.01

0.001

-5

0.2

0.4

0.6

0.8

1.0

, ZENER VOLTAGE(V)

FORWARD VOLTAGE (V)

Figure5 Temperature Coefficient of

Zener Voltage

V vs.

Figure6 Forward Current vs. Forward Voltage

RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 )

100

P_tot=500mW

T_A=25^OC

P_tot=500mW

T_A=25^OC

, ZENER VOLTAGE (V)

V , ZENER VOLTAGE (V)

Figure7 Zener Current vs. Zener Voltage

Figure8 Zener Current vs. Zener Voltage

1000

I_Z=1mA

100

5mA

10mA

T_J=25^OC

ZENER VOLTAGE (V)

Figure9 Differential Zener Resistance vs. Zener Voltage

1000

100

t_P/T = 0.5

t_P/T = 0.2

R_θJA= 300K/W

T=T_jmax.- T_A

Single Pulse

t_P/T = 0.01

t_P/T = 0.02

t_P/T = 0.1

t_P/T = 0.05

i_ZM= (-V_Z+(V_Z²+4r_zjX T/Z_thp

)

^1/2) / (2r_zj

)

10^-1

10⁰

10¹

10²

10³

, PULSE LENGTH (mS)

Figure10 Thermal Response

DISCLAIMER NOTICE

Rectron Inc reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet-

ers which may be included on RECTRON data sheets and/ or specifications ca-

n and do vary in different applications and actual performance may vary over ti-

me. Rectron Inc does not assume any liability arising out of the application or

use of any product or circuit.

Rectron products are not designed, intended or authorized for use in medical,

life-saving implant or other applications intended for life-sustaining or other rela-

ted applications where a failure or malfunction of component or circuitry may di-

rectly or indirectly cause injury or threaten a life without expressed written appr-

oval of Rectron Inc. Customers using or selling Rectron components for use in

such applications do so at their own risk and shall agree to fully indemnify Rect-

ron Inc and its subsidiaries harmless against all claims, damages and expendit-

ures.

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