EDB106-C [RECTRON]
暂无描述;
| 型号： | EDB106-C |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | 暂无描述 二极管 |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDB101
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EDB106
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEATURES
* Good for automatic insertion
* Surge overloading rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
DB-1
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
(
)
)
.255 6.5
MECHANICAL DATA
(
.245 6.2
* UL listed the recognized component directory, file #94233
* Epoxy: Device has UL flammability classification 94V-O
(
)
)
.350 8.9
(
.300 7.6
(8.51)
(8.12)
.335
.320
(
)
.135 3.4
(
)
.115 2.9
(
)
)
.165 4.2
.020
(
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.155 3.9
(
)
0.5
.060
(
)
)
.205 5.2
(
)
1.5
(
.195 5.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
EDB101 EDB102 EDB103 EDB104 EDB105 EDB106
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
V
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
O
100
I
1.0
30
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
10
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 150
ELECTRICAL CHARACTERISTICS (At T
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
A
= 25oC unless otherwise noted)
SYMBOL
EDB101 EDB102 EDB103 EDB104 EDB105 EDB106
1.0 1.25
UNITS
Volts
V
F
Maximum DC Reverse Current
@T
@T
A
A
= 25oC
=150oC
5.0
50
50
I
R
uAmps
nSec
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
trr
NOTES : 1. Test Conditions: I
F
=0.5A, I
R=-1.0A, IRR=-0.25A.
2001-5
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES EDB101 THRU EDB106
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
2.0
1.0
0
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
Inductive Load
( + )
0
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
100
10
T
= 150
= 100
J
1.0
.1
T
J
T
= 25
J
1.0
.1
SF11~SF14
Pulse Width = 300uS
1% Duty Cycle
T
= 25
J
.01
.01
.001
0
.2
.4
.6
.8
1.0 1.2
1.4
0
20
40
60
80
100
120 140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
30
8.3ms Single Half Sine-Wave
60
40
(JEDEC Method)
25
20
15
10
20
EDB101~EDB104
10
6
T
= 25
J
4
5
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
相关型号：
EDB106S
GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)
RECTRON
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