EFM204-W [RECTRON]

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2;


型号：	EFM204-W
厂家：	RECTRON SEMICONDUCTOR
描述：	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 超快速恢复二极管光电二极管
文件：	总3页 (文件大小：33K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EFM201

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

EFM207

SURFACE MOUNT GLASS PASSIVATED

SUPER FAST SILICON RECTIFIER

VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes

FEATURES

* Glass passivated device

* Ideal for surface mounted applications

* Low leakage current

* Metallurgically bonded construction

* Mounting position: Any

* Weight: 0.098 gram

DO-214AA

MECHANICAL DATA

( )

0.083 2.11

* Epoxy : Device has UL flammability classification 94V-0

(

)

0.155 3.94

(

)

0.077 1.96

(

0.130 3.30

(

)

0.180 4.57

(

)

0.160 4.06

(

)

0.012 0.305

(

)

0.006 0.152

(

)

0.096 2.44

(

)

0.084 2.13

(

0.060 1.52

(

)

0.008 0.203

(

)

0.030 0.76

(

0.004 0.102

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

(

)

0.220 5.59

(

)

0.205 5.21

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At TA

= 25^oC unless otherwise noted)

RATINGS

UNITS

SYMBOL

EFM202 EFM203 EFM204 EFM205 EFM206 EFM207

EFM201

Maximum Recurrent Peak Reverse Voltage

Volts

100

150

105

150

200

140

200

300

210

300

400

280

400

RRM

RMS

600

420

600

Maximum RMS Volts

100

Maximum DC Blocking Voltage

Maximum Average Forward Current

Amps

2.0

at TA

= 55^oC

Peak Forward Surge Current IFM (surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)

FSM

Typical Junction Capacitance (Note 2)

⁰C

Operating and Storage Temperature Range

-55 to + 150

TJ, TSTG

ELECTRICAL CHARACTERISTICS (At T

= 25^oC unless otherwise noted)

SYMBOL

UNITS

Volts

CHARACTERISTICS

EFM203 EFM204 EFM205 EFM206 EFM207

EFM201 EFM202

Maximum Forward Voltage at 2.0A DC

0.95

1.25

1.70

Maximum DC Reverse Current

at Rated DC Blocking Voltage

= 25^oC

=100^oC

5.0

uAmps

100

Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: I =0.5A, I =-1.0A, IRR=-0.25A.

2. Measured at 1 MH and applied reverse voltage of 4.0 volts.

nSec

trr

2004-12

REV.A

RATING AND CHARACTERISTIC CURVES ( EFM201 THRU EFM207 )

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

FIG. 2 - TYPICAL FORWARD

CURRENT DERATING CURVE

NONINDUCTIVE

trr

NONINDUCTIVE

3.0

2.0

+0.5A

( - )

PULSE

GENERATOR

(NOTE 2)

D.U.T

( + )

25 Vdc

(approx)

( - )

-0.25A

Single Phase

Half Wave 60Hz

Resistive or

1.0

OSCILLOSCOPE

(NOTE 1)

( + )

NON-

Inductive Load

INDUCTIVE

-1.0A

25 50 75 100 125150175

1cm

Rise Time = 7ns max. Input Impedance =

1 megohm. 22pF.

NOTES:

SET TIME BASE FOR

10 ns/cm

AMBIENT TEMPERATURE (

)

2. Rise Time = 10ns max. Source Impedance =

50 ohms.

FIG. 4 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

= 150

= 100

1.0

EFM207

EFM205~EFM206

EFM201~EFM204

1.0

= 25

.01

Pulse Width = 300uS

1% Duty Cycle

.01

.001

100

120 140

.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8

INSTANTANEOUS FORWARD VOLTAGE, (V)

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

105

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200

100

8.3ms Single Half Sine-Wave

(

)

JEDEC Method

EFM201~EFM204

EFM205~EFM207

= 25

.1 .2 .4

1.0

10 20 40 100

100

NUMBER OF CYCLES AT 60Hz

REVERSE VOLTAGE, ( V )

RECTRON

Mounting Pad Layout

0.106 MAX.

(2.69 MAX.)

0.083 MIN.

(2.10 MIN.)

0.050 MIN.

(1.27 MIN.)

0.220 REF

Dimensions in inches and (millimeters)

RECTRON

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