EFM205A [RECTRON]
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes; 表面安装玻璃钝化超快速硅整流电压范围50到600伏特电流2.0安培
| 型号： | EFM205A |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes |
| 文件： | 总3页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFM201A
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EFM207A
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
(
)
0.067 1.70
(
)
)
0.110 2.79
(
)
0.051 1.29
(
0.086 2.18
(
)
0.180 4.57
(
)
0.160 4.06
(
)
0.012 0.305
(
)
0.006 0.152
(
)
0.091 2.31
(
)
)
0.067 1.70
(
0.059 1.50
(
)
)
0.008 0.203
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
0.035 0.89
(
0.004 0.102
(
)
)
0.209 5.31
(
0.185 4.70
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA
= 25oC unless otherwise noted)
RATINGS
UNITS
SYMBOL
EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A
EFM201A
Maximum Recurrent Peak Reverse Voltage
Volts
Volts
Volts
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
V
V
RRM
RMS
600
420
600
Maximum RMS Volts
100
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
Amps
Amps
2.0
75
I
O
at TA
= 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
pF
0 C
C
J
30
20
Operating and Storage Temperature Range
-55 to + 150
TJ, TSTG
ELECTRICAL CHARACTERISTICS (At T
A
= 25oC unless otherwise noted)
SYMBOL
UNITS
Volts
CHARACTERISTICS
EFM203A EFM204A EFM205A EFM206A EFM207A
EFM201A EFM202A
Maximum Forward Voltage at 2.0A DC
0.95
1.25
1.70
V
F
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
=150oC
5.0
50
IR
uAmps
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I =0.5A, I =-1.0A, IRR=-0.25A.
2. Measured at 1 MH and applied reverse voltage of 4.0 volts.
nSec
35
50
trr
F
R
2003-3
Z
RATING AND CHARACTERISTIC CURVES ( EFM201A THRU EFM207A )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
3.0
2.0
+0.5A
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
( + )
0
25 Vdc
(approx)
( - )
-0.25A
Single Phase
Half Wave 60Hz
Resistive or
1.0
0
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
Inductive Load
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
NOTES:
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
100
T
= 150
= 100
J
1.0
10
T
J
EFM207A
EFM205A~EFM206A
EFM201A~EFM204A
.1
1.0
T
= 25
T
= 25
J
J
.1
.01
Pulse Width = 300uS
1% Duty Cycle
.01
.001
0
20
40
60
80
100
120 140
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
105
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
90
8.3ms Single Half Sine-Wave
(
)
JEDEC Method
75
40
EFM201A~EFM204A
EFM205A~EFM207A
20
60
45
30
15
0
10
6
4
T
= 25
J
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, ( V )
RECTRON
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
Dimensions in inches and (millimeters)
RECTRON
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