FFM205AV-W [RECTRON]
Rectifier Diode,;
| 型号： | FFM205AV-W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 二极管 光电二极管 功效 快速恢复二极管 |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFM201
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FFM207
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
DO-214AA
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
(
)
0.083 2.11
(
)
)
0.155 3.94
(
)
0.077 1.96
(
0.130 3.30
(
)
0.180 4.57
(
)
0.160 4.06
(
)
0.012 0.305
(
)
0.006 0.152
(
)
)
)
0.096 2.44
(
0.084 2.13
(
0.060 1.52
(
)
)
0.008 0.203
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
0.030 0.76
(
0.004 0.102
(
)
)
0.220 5.59
(
0.205 5.21
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
FFM201 FFM202 FFM203 FFM204 FFM205 FFM206 FFM207 UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
50
35
50
100
70
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Amps
RMS
Maximum DC Blocking Voltage
V
DC
O
100
1000
Maximum Average Forward Rectified Current at T
A
= 55oC
I
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
70
Amps
(Note 2) RθJL
(Note 3) RθJA
20
0C/W
0C/W
pF
Maximum Thermal Resistance
60
50
Typical Junction Capacitance (Note 1)
CJ
T
J
, TSTG
-65 to + 175
0 C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At T
CHARACTERISTICS
Maximum Forward Voltage at 2.0A DC
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 25oC unless otherwise noted)
SYMBOL
FFM201 FFM202 FFM203 FFM204 FFM205 FFM206 FFM207 UNITS
1.3
50
Volts
V
F
o
A
= 55 C
uAmps
uAmps
= 25oC
= 125oC
I
R
Maximum DC Reverse Current at
Rated DC Blocking Voltage
5.0
@T
@T
A
A
200
uAmps
nSec
trr
150
250
500
Maximum Reverse Recovery Time (Note 4)
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2001-5
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
(
)
RATING AND CHARACTERISTIC CURVES FFM201 THRU FFM207
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
2.5
2.0
1.5
1.0
.5
105
90
75
60
45
30
15
0
8.3ms Single Half Sine-Wave
(JEDEC Method)
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
0
25 50 75 100 125 150 175
1
2
5
10
20
50
100
AMBIENT TEMPERATURE, (
)
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
200
20
10
100
60
3.0
1.0
0.3
0.1
40
T
= 25
J
20
Pulse Width=300uS
1% Duty Cycle
10
T
= 25
J
6
4
.03
.01
2
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
.1
.2
.4
1.0
2
4
10
20 40
100
REVERSE VOLTAGE, ( V )
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
0
( + )
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
NOTES:
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
RECTRON
相关型号：
FFM205L
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere
RECTRON
FFM206
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)
RECTRON
FFM206-W
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-214AA, DO-214AA, 2 PIN
RECTRON
©2020 ICPDF网 联系我们和版权申明