FM120B-T [RECTRON]
Rectifier Diode,;
| 型号： | FM120B-T |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FM120
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM1100
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere
FEATURES
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.09 gram
DO-214AC
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
(
)
0.067 1.70
(
)
)
0.110 2.79
(
)
0.051 1.29
(
0.086 2.18
(
)
0.180 4.57
(
)
0.160 4.06
(
)
0.012 0.305
(
)
0.006 0.152
(
)
0.091 2.31
(
)
)
0.067 1.70
(
0.059 1.50
(
)
)
0.008 0.203
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
0.035 0.89
(
0.004 0.102
(
)
)
0.209 5.31
(
0.185 4.70
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
FMB120 FMB130 FMB140 FMB150 FMB160 FMB180 FMB1100 UNITS
V
V
RRM
RMS
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
DC
O
100
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Lead Temperature
I
1.0
40
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Amps
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Rθ JA
50
0C/W
pF
0 C
CJ
J
110
T
-65 to + 125
-65 to + 150
Storage Temperature Range
T
STG
-65 to + 150
0 C
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
FMB1100
CHARACTERISTICS
SYMBOL
FMB120 FMB130 FMB140 FMB150 FMB160 FMB180
.55 .70
UNITS
Volts
Maximum Instantaneous Forward Voltage at 1.0A DC
.85
V
F
Maximum Average Reverse Current
@T
A
A
= 25oC
= 100oC
1.0
10
mAmps
mAmps
I
R
at Rated DC Blocking Voltage
@T
NOTES : 1. Thermal Resistance (Junction to Ambient).
2001-5
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. P.C.B Monuted with 0.2X0.2” (5.0X5.0mm2) copper pad area.
RATING AND CHARACTERISTIC CURVES ( FM120 THRU FM1100 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARCTERISTICS
20
10
1.0
.75
.50
.25
0
FM120
FM130
FM140
FM150
FM160
FM180
1.0
Single
Half Wave 60HZ
Resistive or
Inductive Load
0.375" (9.5mm) Lead Length
T
= 25
J
FM1100
Pulse Width = 300uS
1% Duty Cycle
.1
.1 .3 .5 .7 .9 1.1 1.3 1.5 1.7 1.9 2.1
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
25
50
75
100
125
150
175
LEAD TEMPERATURE, (
)
FIG. 3A - TYPICAL REVERSE CHARACTERISTICS
FIG. 3B - TYPICAL REVERSE CHARACTERISTICS
100
100
10
FM120~FM140
T
= 125
J
10
1.0
1.0
T
= 75
J
T
= 150
J
0.1
.01
0.1
.01
T
= 125
= 75
J
T
= 25
J
T
J
FM150~FM160
FM180~FM1100
T
= 25
J
.001
.001
0
20 40
60
80 100 120 140
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
400
200
50
40
TJ = 25
8.3ms Single Half Sine-Wave
JEDEC Method
100
80
30
60
20
40
20
10
10
0
.1
.4
1.0
4
10
40 80
1
2
4
6 810
20 40
80100
REVERSE VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
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