HFM502B [RECTRON]

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER;


型号：	HFM502B
厂家：	RECTRON SEMICONDUCTOR
描述：	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER 功效
文件：	总7页 (文件大小：397K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HFM501B

THRU

HFM508B

SURFACE MOUNT GLASS PASSIVATED

HIGH EFFICIENCY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 5.0 Amperes

FEATURES

* Low power loss,high efficiency

* Low leakage

* Low forward voltage drop

* High current capability

* High speed switching

* High reliability

SMB

* High current surge

MECHANICAL DATA

0.083 (2.11)

0.077 (1.96)

0.155 (3.94)

0.130 (3.30)

* Epoxy: Device has UL flammability classification 94V-O

* Case: Molded plastic

0.180 (4.57)

0.160 (4.06)

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 1.20 grams

0.012 (0.305)

0.006 (0.152)

0.096 (2.44)

0.064 (2.13)

0.060 (1.52)

0.030 (0.76)

0.008 (0.203)

0.004 (0.102)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

resistive or inductive load.

0.220 (5.59)

0.205 (5.21)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (@ T

=25 C unless otherwise noted)

SYMBOL HFM501B HFM502B HFM503B HFM504B HFM505B HFM506B HFM507B HFM508B UNITS

RATINGS

V_RRM

V_RMS

V_DC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

Maximum DC Blocking Voltage

1000

Maximum Average Forward Rectified Current

I_O

I_FSM

I²t

5.0

Amps

at T = 50 C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

200

150

A²/Sec

⁰C/W

93.3

Current Squarad Time

165.9

J L

J A

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance (Note 2)

Operating Temperature Range

Storage Temperature Range

C_J

T_J

⁰C

150

T_STG

-55 to + 150

⁰C

ELECTRICAL CHARACTERISTICS(@T

=25 C unless otherwise noted)

CHARACTERISTICS

SYMBOL HFM501B HFM502B HFM503B HFM504B HFM505B HFM506B HFM507B HFM508B UNITS

Maximum Instantaneous Forward Voltage at 3.0A DC

1.0

1.3

1.7

Volts

V_F

Maximum Average Reverse Current

@T_A= 25^oC

at Rated DC Blocking Voltage

I_R

µA

Maximum Full Load Reverse Current Average,

150

Full Cycle .375" (9.5mm) lead length at T =55 C

Maximum Reverse Recovery Time (Note 4)

nSec

trr

NOTES : 1. Thermal Resistance : At 9.5mm lead length, PCB mounted.

2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.

3. “ ROHS compliant”

2018-10

REV: A

4. Test Conditions: I = 0.5A, I = -1.0A, I = -0.25A.

5. Available in Halo^Fgen-free ^Repoxy by adding suffix -HF after the part nbr.

RATING AND CHARACTERISTICS CURVES ( HFM501B THRU HFM508B )

trr

+0.5A

NONINDUCTIVE

( - )

PULSE

GENERATOR

(NOTE 2)

D.U.T

( + )

25 Vdc

(approx)

( - )

-0.25A

( + )

OSCILLOSCOPE

(NOTE 1)

NON-

INDUCTIVE

NOTES:

Rise Time = 7ns max. Input Impedance =

1 megohm. 22pF.

-1.0A

2. Rise Time = 10ns max. Source Impedance =

50 ohms.

1cm

SET TIME BASE FOR 20/1 ns/cm

FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

5.0

1000

4.0

3.0

2.0

= 125 ^OC

100

= 75 ^OC

= 25 ^OC

1.0

0.1

Single Phase

Half Wave 60Hz

Resistive or

1.0

Inductive Load

100

125

150

175

100

120

140

AMBIENT TEMPERATURE, (^OC)

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG.2 TYPICAL FORWARD CURRENT

DERATING CURVE

FIG.3 TYPICAL REVERSE

CHARACTERISTICS

RATING AND CHARACTERISTICS CURVES ( HFM501B THRU HFM508B )

210

200

8.3ms Single Half Sine-Wave

(JEDED Method)

= 25 ^OC

3.0

1.0

150

HFM506B~HFM508B

HFM504B~HFM505B

0.3

0.1

100

HFM501B~HFM503B

HFM506B~HFM508B

0.03

0.01

Pulse Width=300uS

1% Duty Cycle

HFM501B~HFM505B

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

INSTANTANEOUS FORWARD VOLTAGE, (V)

NUMBER OF CYCLES AT 60Hz

FIG.5 MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

FIG.4 MAXIMUM INSTANTANEOUS FORWARD

CHARACTERISTICS

200

= 25 ^OC

HFM501B~HFM505B

100

HFM506B~HFM508B

0.1 0.2

0.4

1.0

100

REVERSE VOLTAGE, (V)

FIG.6 TYPICAL JUNCTION CAPACITANCE

Mounting Pad Layout

0.106 MAX.

(2.69 MAX.)

0.083MIN.

(2.10MIN.)

0.050 MAX.

(1.27 MAX.)

0.220

(5.58) REF

Dimensions in inches and (millimeters)

Marking Description

Rectron Logo

Part No.

5 H X

Voltage-code

1-------50V

5-------400V

6-------600V

7-------800V

8-------1000V

V Y W W

2-------100V

3-------200V

4-------300V

Cathode Band

Year – code

Week – code

(Y:Last digit of year &

A:2010,B:2011……)

(WW:01~52)

PACKAGING OF DIODE AND BRIDGE RECTIFIERS

REEL PACK

COMPONENT

SPACE

EA PER

INNER

BOX

PACKING

CODE

EA PER

REEL

REEL DIA CARTON SIZE EA PER

GROSS

TAPE SPACE

(mm)

PACKAGE

SMB

(mm)

CARTON WEIGHT(Kg)

(mm)

-W/-T

3,000

6,000

---

330

360*355*360 48,000

13.90

---

DISCLAIMER NOTICE

Rectron Inc reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet-

ers which may be included on RECTRON data sheets and/ or specifications ca-

n and do vary in different applications and actual performance may vary over ti-

me. Rectron Inc does not assume any liability arising out of the application or

use of any product or circuit.

Rectron products are not designed, intended or authorized for use in medical,

life-saving implant or other applications intended for life-sustaining or other rela-

ted applications where a failure or malfunction of component or circuitry may di-

rectly or indirectly cause injury or threaten a life without expressed written appr-

oval of Rectron Inc. Customers using or selling Rectron components for use in

such applications do so at their own risk and shall agree to fully indemnify Rect-

ron Inc and its subsidiaries harmless against all claims, damages and expendit-

ures.

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