IHER804R [RECTRON]

Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN;


型号：	IHER804R
厂家：	RECTRON SEMICONDUCTOR
描述：	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN 整流二极管功效局域网
文件：	总2页 (文件大小：29K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IHER801

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

IHER805

HIGH EFFICIENCY RECTIFIER

VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes

FEATURES

* Low switching noise

* Low forward voltage drop

* Low thermal resistance

* High current capability

* High fast switching capability

* High surge capability

ITO-220A

(

)

.185 4.7

MECHANICAL DATA

(

)

(

)

.169 4.3

.138 3.5

(

)

.406 10.3

.114(2.9)

.098(

(

.122 3.1

* Case: ITO-220A molded plastic

* Epoxy: Device has UL flammability classification 94V-O

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

(

)

.134 3.4

.110(2.8)

(

)

.382 9.7

)

2.5

(

)

.602 15.3

* Weight: 2.24 grams

(

.579 14.7

.04MAX.

(

)

1.0

.154 (3.9)

.138 (3.5)

.114(2.9)

.098(

.071(1.8)

.055(1.4)

)

2.5

(

)

.531 13.5

.492 12.5

.039(

)

1.0

(0.9)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.035

(

)

.020 0.5

(

)

.031 0.8

(2.75)

.108

(

.016 0.4

(

)

.091 2.30

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

IHER801

IHER802

100

IHER803

200

IHER804

300

IHER805

SYMBOL

UNITS

Volts

RRM

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

400

280

400

RMS

140

210

100

200

300

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at TC

= 75^oC

8.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

200

Amps

R θ J C

Typical Thermal Resistance

2.5

⁰C/W

⁰C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

, TSTG

-55 to + 150

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

IHER801 IHER802

1.0

IHER803

IHER804

IHER805

CHARACTERISTICS

SYMBOL

UNITS

Volts

1.3

Maximum Instantaneous Forward Voltage at 8.0A DC

= 25^oC

= 100^oC

Maximum DC Reverse Current

150

uAmps

nSec

at Rated DC Blocking Voltage

Maximum Reverse Recovery Time (Note 1)

trr

2003-1

NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR =- 0.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.

3. Suffix “R” for Reverse Polarity.

(

)

RATING AND CHARACTERISTIC CURVES IHER801 THRU IHER805

FIG. 2 - TYPICAL REVERSE CHARACTERISTICS

FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE

1000

100

= 100

Single Phase Half Wave

60Hz Inductive or

Resistive Load

1.0

0.1

100

150

CASE TEMPERATURE, (

)

= 25

FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

225

200

100 120 140

175

150

125

8.3ms Single Half Sine-Wave

(JEDEC Method)

PERCENT OF RATED PEAK

REVERSE VOLTAGE, (%)

100

NUMBER OF CYCLES AT 60Hz

FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

200

100

1.0

= 25

TJ=25

Pulse Width = 300uS

1% Duty Cycle

1.0

1.1

1.2

1.3

.1 .2 .4

1.0

10 20 40 100

INSTANTANEOUS FORWARD VOLTAGE, (V)

REVERSE VOLTAGE, ( V )

RECTRON

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