MMST5401 [RECTRON]
SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP); SOT- 323双极晶体管晶体管（ PNP ）
| 型号： | MMST5401 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) |
| 文件： | 总2页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
MMST5401
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (PNP)
FEATURES
Power dissipation
*
*
*
*
Pcm: 0.2 W (Tamb=25OC)
Collector current
Icm: -0.2 A
Collector-base voltage
V(BR)CBO: -160 V
SOT-323
Operationg and storage junction temperature range
TJ,Tstg: -55OCto +150OC
MECHANICAL DATA
* Case: Molded plastic
0.051(1.30)
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
REF .040(1.01)
* Weight: 0.006 gram
0.092(2.35)
0.089(2.25)
0.012(0.30)
0.052(1.33)
0.050(1.27)
0.081(2.05)
0.077(1.95)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
VALUE
UNITS
-
-
-
200
PD
mW
oC
150
TJ
TSTG
oC
-55 to +150
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (1)
Max. Instantaneous Forward Voltage at IF= 10mA
SYMBOL
MIN.
TYP.
MAX.
625
-
UNITS
oC/W
Volts
R θJA
-
-
-
-
VF
NOTES : 1. Valid provided that terminals are kept at ambient temperature.
2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (2)
Collector-Emitter Breakdown Voltage (I = -1.0mAdc, I = 0)
V
-150
-
Vdc
C
B
(BR)CEO
Collector-Base Breakdown Voltage (I = -100µAdc, I = 0)
V
-160
-
-
Vdc
Vdc
C
E
(BR)CBO
Emitter-Base Breakdown Voltage (I = -10µAdc, I = 0)
V
-5
-
E
C
(BR)EBO
I
-50
Collector Cutoff Current (V
Emitter Cutoff Current (V
= -120Vdc, I = 0)
E
nAdc
nAdc
CBO
CB
I
= -3.0Vdc, I = 0)
-
-50
EBO
EB
C
ON CHARACTERISTICS (2)
50
60
50
-
DC Current Gain (I = -1mAdc, V
C
= -5Vdc)
= -5Vdc)
CE
(I = -10mAdc, V
C
hFE
240
-
-
CE
(I = -50mAdc, V
C
= -5Vdc)
CE
-0.2
-0.5
-1
Collector-Emitter Saturation Voltage (I = -10mAdc, I = -1mAdc)
-
-
C
B
V
Vdc
Vdc
CE(sat)
(I = -50mAdc, I = -5mAdc)
C
B
Base-Emitter Saturation Voltage (I = -10mAdc, I = -1mAdc)
-
-
C
B
V
BE(sat)
(I = -50mAdc, I = -5mAdc)
-1
C
B
SMALL-SIGNAL CHARACTERISTICS
f
Current-Gain-Bandwidth Product (I = -10mAdc, V
= -10Vdc, f= 100MHz)
100
300
6
MHz
pF
-
T
C
CE
C
Output Capacitance (V
= -10Vdc, I = 0, f= 1.0MHz)
-
40
-
ob
CB
E
h
Small-Signal Current Gain (I = -1.0mAdc, V
= -10Vdc, f= 1.0kHz)
200
8
fe
C
CE
= -5Vdc, f= 1.0kHz,Rg=10
CE
Noise figure (I = -0.2mAdc, V
Ω
)
NF
dB
C
<
<
-
NOTES : 2. Pulse Test: Pulse Width 300µs,Duty Cycle 2.0%
-
RECTRON
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