RL105H-B [RECTRON]

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, A-405, 2 PIN;


型号：	RL105H-B
厂家：	RECTRON SEMICONDUCTOR
描述：	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, A-405, 2 PIN 瞄准线二极管
文件：	总2页 (文件大小：29K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RL101H

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

RL108H

HIGH EFFICIENCY RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Low power loss, high efficiency

* Low leakage

* Low forward voltage

* High current capability

* High speed switching

* High surge capability

* High reliability

A-405

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: Device has UL flammability classification 94V-O

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

(

)

.025 0.6

DIA.

(

)

.021 0.5

(

)

1.0 25.4

MIN.

* Weight: 0.33 gram

(

)

.205 5.2

(

)

.166 4.2

(

)

.107 2.7

DIA.

(

)

.080 2.0

(

)

1.0 25.4

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

UNITS

Volts

RL101H RL102H RL103H RL104H RL105H RL106H RL107H RL108H

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

100

200

300

400

280

400

600

800

560

800

1000

700

140

200

210

300

420

600

Maximum DC Blocking Voltage

VDC

100

1000

Maximum Average Forward Rectified Current

1.0

Amps

at TA

= 55^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

Typical Junction Capacitance (Note 2)

⁰C

, TSTG

-55 to + 150

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

RL101H RL102H RL103H RL104H RL105H RL106H RL107H RL108H UNITS

Maximum Instantaneous Forward Voltage at 1.0A DC

Volts

1.0

1.3

1.7

Maximum DC Reverse Current

5.0

uAmps

at Rated DC Blocking Voltage TA

= 25^oC

Maximum Full Load Reverse Current

100

uAmps

Average, Full Cycle .375” (9.5mm) lead length at TL

= 55^oC

Maximum Reverse Recovery Time (Note 1)

trr

nSec

NOTES : 1. Test Conditions: I

= 0.5A, IR = -1.0A, IRR = -0.25A

2003-7

2. Measured at 1 MH

and applied reverse voltage of 4.0 volts

(

)

RATING AND CHARACTERISTIC CURVES RL101H THRU RL108H

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

FIG. 2 - TYPICAL FORWARD

CURRENT DERATING CURVE

trr

NONINDUCTIVE

+0.5A

2.0

1.0

( - )

PULSE

GENERATOR

(NOTE 2)

Single Phase

Half Wave 60Hz

Resistive or

D.U.T

( + )

25 Vdc

(approx)

( - )

-0.25A

Inductive Load

OSCILLOSCOPE

(NOTE 1)

( + )

NON-

INDUCTIVE

-1.0A

1cm

Rise Time = 7ns max. Input Impedance =

1 megohm. 22pF.

2. Rise Time = 10ns max. Source Impedance =

50 ohms.

NOTES:

25 50 75 100 125 150 175

SET TIME BASE FOR

10/20 ns/cm

AMBIENT TEMPERATURE (

)

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

FIG. 4 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

100

= 150

= 100

1.0

300 / 400V

600 / 800/ 1000V

50 / 100 / 200V

= 25

.01

Pulse Width = 300uS

1% Duty Cycle

.001

.01

100

120

140

.8 1.0 1.2 1.4 1.6 1.8

PERCENT OF RATED PEAK

REVERSE VOLTAGE, (%)

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200

8.3ms Single Half Sine-Wave

(JEDEC Method)

100

RL101H~RL105H

T = 25

RL106H~RL108H

8 10

20 40

100

.2 .4

1.0

10 20 40 100

NUMBER OF CYCLES AT 60Hz

REVERSE VOLTAGE, ( V )

RECTRON

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