RS1003M-C [RECTRON]

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RS1003M-C
型号: RS1003M-C
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

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RS1001M  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
RS1007M  
SINGLE-PHASE SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes  
FEATURES  
* Low leakage  
* Low forward voltage  
* Mounting position: Any  
* Surge overload rating: 200 amperes peak  
* Silver-plated copper leads  
RS-10M  
MECHANICAL DATA  
(
)
.189 4.8  
* UL listed the recognized component directory, file #E94233  
(
)
)
)
.173 4.4  
(
)
)
.995 25.3  
(
.150 3.8  
* Epoxy: Device has UL flammability classification 94V-O  
(
.134 3.4  
(
.983 24.7  
(
.057 1.45)  
(
)
)
.114 2.9  
(
)
)
.041 1.05  
(
.083 2.1  
(
.098 2.5  
(
)
.069 1.7  
(
)
)
.043 1.1  
(
)
)
.031 0.8  
(
.035 0.9  
(
.023 0.6  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
)
(
)
)
(
.303 7.7  
)
)
.303 7.7  
.303 7.7  
(
(
(
.287 7.3  
.287 7.3  
.287 7.3  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
RRM  
RMS  
50  
35  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
1000  
700  
Volts  
Volts  
V
V
DC  
50  
100  
200  
400  
10  
600  
800  
1000  
Volts  
Amps  
Amps  
0 C  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Output Current at Tc = 100oC  
with heatsink  
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave  
I
FSM  
200  
superimposed on rated load  
T
J,  
T
STG  
-55 to + 150  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS  
Maximum Forward Voltage Drop per element at 5.0A DC  
VF  
1.1  
10  
Volts  
= 25oC  
uAmps  
@TA  
C
Maximum Reverse Current at Rated  
DC Blocking Voltage per element  
I
R
@T  
= 100oC  
0.2  
mAmps  
2001-5  
RATING AND CHARACTERISTIC CURVES (RS1001M THRU RS1007M)  
TYPICAL INSTANTANEOUS FORWARD  
POWER DISSIPATION  
CHARACTERISTICS  
34  
30  
20  
sine wave  
Tj=150  
30  
10  
5
20  
10  
TC = 150 (TYP)  
2
1
TC = 25 (TYP)  
0.5  
0.2  
0.1  
pulse test  
per one diode  
0
0
2
4
6
8
10  
12  
14  
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2  
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
TYPICAL FORWARD CURRENT  
DERATING CURVE  
SURGE FORWARD CURRENT CAPABILITY  
sine wave  
3
200  
180  
160  
on glass-epoxi substrate  
0
8.3ms 8.3ms  
1 cycle  
non-repetitive  
Tj=25  
P.C.B  
2
sine wave  
R-load  
free in air  
140  
120  
100  
80  
1
0
60  
1
0
40  
80  
120  
160  
2
5
10  
20  
50  
100  
NUMBER OF CYCLE  
AMBIENT TEMPERATURE, (  
)
TYPICAL FORWARD CURRENT  
DERATING CURVE  
CONTACT THERMAL RESISTANCE fcf  
with thermal compound  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
12  
10  
heatsink  
Tc  
Tc  
8
sine wave  
R-load  
on heatsink  
6
4
2
0
80 90 100 110 120 130 140 150 160  
CASE TEMPERATURE, (  
2
3
4
5
6
7
8
)
MOUNTING TORQUE (Kg.cm)  
RECTRON  

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