RS1003M-C [RECTRON]
暂无描述;型号: | RS1003M-C |
厂家: | RECTRON SEMICONDUCTOR |
描述: | 暂无描述 |
文件: | 总2页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RS1001M
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS1007M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 200 amperes peak
* Silver-plated copper leads
RS-10M
MECHANICAL DATA
(
)
.189 4.8
* UL listed the recognized component directory, file #E94233
(
)
)
)
.173 4.4
(
)
)
.995 25.3
(
.150 3.8
* Epoxy: Device has UL flammability classification 94V-O
(
.134 3.4
(
.983 24.7
(
.057 1.45)
(
)
)
.114 2.9
(
)
)
.041 1.05
(
.083 2.1
(
.098 2.5
(
)
.069 1.7
(
)
)
.043 1.1
(
)
)
.031 0.8
(
.035 0.9
(
.023 0.6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
(
)
)
(
.303 7.7
)
)
.303 7.7
.303 7.7
(
(
(
.287 7.3
.287 7.3
.287 7.3
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
V
RRM
RMS
50
35
100
70
200
140
400
280
600
420
800
560
1000
700
Volts
Volts
V
V
DC
50
100
200
400
10
600
800
1000
Volts
Amps
Amps
0 C
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 100oC
with heatsink
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
200
superimposed on rated load
T
J,
T
STG
-55 to + 150
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS
Maximum Forward Voltage Drop per element at 5.0A DC
VF
1.1
10
Volts
= 25oC
uAmps
@TA
C
Maximum Reverse Current at Rated
DC Blocking Voltage per element
I
R
@T
= 100oC
0.2
mAmps
2001-5
RATING AND CHARACTERISTIC CURVES (RS1001M THRU RS1007M)
TYPICAL INSTANTANEOUS FORWARD
POWER DISSIPATION
CHARACTERISTICS
34
30
20
sine wave
Tj=150
30
10
5
20
10
TC = 150 (TYP)
2
1
TC = 25 (TYP)
0.5
0.2
0.1
pulse test
per one diode
0
0
2
4
6
8
10
12
14
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
TYPICAL FORWARD CURRENT
DERATING CURVE
SURGE FORWARD CURRENT CAPABILITY
sine wave
3
200
180
160
on glass-epoxi substrate
0
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=25
P.C.B
2
sine wave
R-load
free in air
140
120
100
80
1
0
60
1
0
40
80
120
160
2
5
10
20
50
100
NUMBER OF CYCLE
AMBIENT TEMPERATURE, (
)
TYPICAL FORWARD CURRENT
DERATING CURVE
CONTACT THERMAL RESISTANCE fcf
with thermal compound
1.6
1.5
1.4
1.3
1.2
1.1
1
12
10
heatsink
Tc
Tc
8
sine wave
R-load
on heatsink
6
4
2
0
80 90 100 110 120 130 140 150 160
CASE TEMPERATURE, (
2
3
4
5
6
7
8
)
MOUNTING TORQUE (Kg.cm)
RECTRON
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