RS103M [RECTRON]

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere; 单相玻璃钝化硅桥式整流器电压范围50到1000伏特电流1.0安培


型号：	RS103M
厂家：	RECTRON SEMICONDUCTOR
描述：	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 单相玻璃钝化硅桥式整流器电压范围50到1000伏特电流1.0安培整流二极管桥式整流二极管
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RS101M

THRU

RS107M

SINGLE-PHASE GLASS PASSIVATED

SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Low leakage

* Low forward voltage

* Low cost

* Mounting position: Any

RS-1M

MECHANICAL DATA

.146 (3.7)

.130 (3.3)

.582 (14.8)

.559 (14.2)

* Epoxy: Device has UL flammability classification 94V-O

.043 (0.9)

.035 (0.6)

.024 (0.6)

.016 (0.4)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

.165 (4.2)

.165 (4.2) .165 (4.2)

.149 (3.8) .149 (3.8)

For capacitive load, derate current by 20%.

.149 (3.8)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (@ T

=25 C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL

RS101M RS102M RS103M RS104M RS105M RS106M RS107M

UNITS

Volts

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

RRM

RMS

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

Amps

at T = 50^oC

1.0

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

θ JC

θ JA

Typical Thermal Resistance (Note 1)

⁰C/W

⁰C

Operating and Storage Temperature Range

T , T

J STG

-55 to + 150

ELECTRICAL CHARACTERISTICS(@T =25 C unless otherwise noted)

CHARACTERISTICS

SYMBOL

RS101M

RS105M RS106M RS107M

RS102M RS103M RS104M

1.0

UNITS

Volts

Maximum Instantaneous Forward Voltage at 1.0A DC

@T = 25^oC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

2.0

µAmps

@T = 100^oC

100

NOTES : 1. Thermal Resistance : Heat-sink case mounted or if PCB mounted.

2. "Fully ROHS compliant", "100% Sn plating (Pb-free)".

2006-12

RATING AND CHARACTERISTICS CURVES ( RS101M THRU RS107M )

1.0

0.8

0.6

1.0

0.4

0.1

Single Phase Half Wave

60 Hz Inductive or

Resistive Load

0.04

= 25 ^OC

0.2

Pulse Width = 300mS

1% Duty Cycle

0.01

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

150

AMBIENT TEMPERATURE, (^OC)

FIG.1 TYPICAL FORWARD CURRENT

DERATING CURVE

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG.2 TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

1000

100

8.3mS Single Half Sine-Wave

JEDEC Method

= 100 ^OC

= 25 ^OC

1.0

0.1

100

120

140

100

PERCENT RATED PEAK REVERSE VOLTAGE, (%)

NUMBER OF CYCLES AT 60Hz

FIG.4 MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

FIG.3 TYPICAL REVERSE CHARACTERISTICS

DISCLAIMER NOTICE

Rectron Inc reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet-

ers which may be included on RECTRON data sheets and/ or specifications ca-

n and do vary in different applications and actual performance may vary over ti-

me. Rectron Inc does not assume any liability arising out of the application or

use of any product or circuit.

Rectron products are not designed, intended or authorized for use in medical,

life-saving implant or other applications intended for life-sustaining or other rela-

ted applications where a failure or malfunction of component or circuitry may di-

rectly or indirectly cause injury or threaten a life without expressed written appr-

oval of Rectron Inc. Customers using or selling Rectron components for use in

such applications do so at their own risk and shall agree to fully indemnify Rect-

ron Inc and its subsidiaries harmless against all claims, damages and expendit-

ures.

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