SF53-T [RECTRON]
Rectifier Diode, 1 Phase, 1 Element, 5A, 150V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;型号: | SF53-T |
厂家: | RECTRON SEMICONDUCTOR |
描述: | Rectifier Diode, 1 Phase, 1 Element, 5A, 150V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 超快速恢复二极管 |
文件: | 总2页 (文件大小:28K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SF51
THRU
SF56
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
GLASS PASSIVATED SUPER FAST RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 5.0 Amperes
FEATURES
* High reliability
* Low leakage
* Low forward voltage
* High current capability
* Super fast switching speed
* High surge capability
* Good for switching mode circuit
DO-201AD
MECHANICALDATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
(
)
.052 1.3
DIA.
(
)
.048 1.2
1.0 (25.4)
MIN.
* Weight: 1.18 grams
.375 (9.5)
.335 (8.5)
(
)
.220 5.6
DIA.
(
)
.197 5.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
SF51
SF52
SF53
SF54
SF55
SF56
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
V
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
O
100
I
5.0
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
150
Typical Junction Capacitance (Note 2)
C
J
50
30
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum DC Reverse Current
SYMBOL
SF51
SF52
SF53
SF54
SF55
SF56
UNITS
uAmps
@T
@T
A
A
= 25oC
=125oC
5.0
I
R
at Rated DC Blocking Voltage
150
Maximum Forward Voltage at 5.0A DC
0.95
1.25
Volts
nSec
V
F
Maximum Reverse Recovery Time (Note 1)
trr
35
NOTES : 1. Test Conditions: I
F
=0.5A, I
R=-1.0A, IRR=-0.25A.
2001-5
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES SF51 THRU SF56
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
+0.5A
6.0
5.0
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
4.0
( + )
0
25 Vdc
(approx)
( - )
-0.25A
3.0
2.0
1.0
0
Single Phase
Half Wave 60Hz
Resistive or
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
Inductive Load
-1.0A
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
1cm
0
25 50 75 100 125150175
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
100
10
T
= 150
J
10
1.0
.1
T
= 100
J
T
= 25
J
1.0
.1
SF55~SF56
Pulse Width = 300uS
1% Duty Cycle
T
= 25
J
.01
.01
0
20
40
60
80
100
120 140
0
.2 .4
.6
.8 1.0 1.2 1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
175
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
150
8.3ms Single Half Sine-Wave
(
)
JEDEC Method
SF51~SF54
125
100
75
40
20
10
6
T
= 25
J
50
25
0
4
2
1
1
2
5
10
20
50
100
.1 .2 .4
1.0
2
4
10 20 40 100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, ( V )
RECTRON
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