SR835S-C [RECTRON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3;


型号：	SR835S-C
厂家：	RECTRON SEMICONDUCTOR
描述：	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3 瞄准线二极管
文件：	总2页 (文件大小：24K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SR820S

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SR860S

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes

FEATURES

* Low switching noise

* Low forward voltage drop

* Low thermal resistance

* High current capability

* High surge capabitity

* High reliability

D2PAK

MECHANICAL DATA

* Case: D2PAK molded plastic

.189 (4.80)

.173 (4.40)

.053 (1.35)

* Epoxy: Device has UL flammability classification 94V-O

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

.049 (1.25)

* Weight: 2.2 grams

.055 (1.40)

.047 (1.20)

.036 (0.91)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.202 (5.13)

.198 (5.03)

.028 (0.71)

PIN 1

.412 (10.46)

.388 (9.86)

.020 (0.50)

.012 (0.30)

K - HEATSINK

PIN 2

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

SR820S SR830S SR835S SR840S SR845S SR850S SR860S UNITS

RRM

RMS

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at Derating Case Temperature

8.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

150

2.5

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

R θ J C

⁰C/W

⁰C

700

450

-55 to + 150

Storage Temperature Range

STG

⁰C

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

SR820S SR830S SR835S SR840S SR845S SR850S SR860S UNITS

Maximum Instantaneous Forward Voltage at 8.0A DC

.65

.75

Volts

Maximum Average Reverse Current

5.0

mAmps

= 25^oC

= 100^oC

at Rated DC Blocking Voltage

NOTES : 1. Thermal Resistance Junction to Case.

2. Suffix “R” for Reverse Polarity.

2003-6

2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.

(

)

RATING AND CHARACTERISTIC CURVES SR820S THRU SR860S

FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE

FIG. 2 - TYPICAL REVERSE CHARACTERISTICS

= 150

= 125

1.0

Single Phase Half Wave

60Hz Inductive or

Resistive Load

= 75

100

150

= 25

CASE TEMPERATURE, (

)

FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

.01

155

8.3ms Single Half Sine-Wave

(JEDED Method)

150

145

SR820S~SR845S

SR850S~SR860S

.001

100 120 140

140

135

130

125

PERCENT OF RATED PEAK

REVERSE VOLTAGE, (%)

100

NUMBER OF CYCLES AT 60Hz

FIG. 5 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 4 - TYPICAL JUNCTION CAPACITANCE

4000

2000

SR820S~SR845S

1000

800

600

SR850S~SR860S

400

200

100

1.0

0.1

SR850S~SR860S

= 25

Pulse Width=300uS

1% Duty Cycle

1.0

40 80 100

.9 1.0

REVERSE VOLTAGE, ( V )

INSTANTANEOUS FORWARD VOLTAGE, (V)

RECTRON

相关型号：

SR835S-W

暂无描述

RECTRON

SR835SK

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3

RECTRON

SR835SR

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3

RECTRON