2N7288 [RENESAS]
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA;
| 型号： | 2N7288 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
2N7288D4
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
RENESAS
2N7288H3
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
RENESAS
2N7288R3
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
RENESAS
2N7288R4
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
RENESAS
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