2SC3356S-A [RENESAS]
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346;![2SC3356S-A](http://pdffile.icpdf.com/pdf2/p00296/img/icpdf/2SC3356-T1B-_1791186_icpdf.jpg)
型号: | 2SC3356S-A |
厂家: | ![]() |
描述: | TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346 |
文件: | 总9页 (文件大小:182K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PreliminaryData Sheet
2SC3356
R09DS0021EJ0300
Rev.3.00
NPN Silicon RF Transistor
Jun 28, 2011
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
FEATURES
•
•
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
<R>
ORDERING INFORMATION
Part Number
2SC3356
Order Number
2SC3356-A
Package
Quantity
Supplying Form
3-pin Minimold 50 pcs (Non reel)
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
(Pb-Free)
2SC3356-T1B
2SC3356-T1B-A
3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
20
12
V
3.0
V
100
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
200
Tj
150
Tstg
−65 to +150
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 1 of 7
2SC3356
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 10 V, IE = 0
–
–
–
–
1.0
1.0
μA
μA
–
VEB = 1.0 V, IC = 0
Note 1
hFE
VCE = 10 V, IC = 20 mA
50
120
250
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 10 V, IC = 20 mA
–
–
–
−
7
–
GHz
dB
⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz
11.5
1.1
–
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
VCB = 10 V, IE = 0, f = 1 MHz
2.0
1.0
dB
Note 2
Reverse Transfer Capacitance
Cre
0.55
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
<R>
hFE CLASSIFICATION
Rank
Q/YQ
R23
R/YR
R24
S/YS
R25
Marking
hFE Value
50 to 100
80 to 160
125 to 250
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 2 of 7
2SC3356
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
250
200
150
100
50
f = 1 MHz
Free air
1
0.5
0.3
0
25
50
75
100
125
(˚C)
150
50
2
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
200
100
50
10
5
V
CE = 10 V
V
CE = 10 V
2
1
0.5
20
10
0.2
0.1
0.5
1
5
10
(mA)
0.1
0.5
1
5
10
(mA)
50 100
Collector Current I
C
Collector Current I
C
INSERTION POWER GAIN, MAG
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
25
20
15
10
15
10
V
CE = 10 V
f = 1 GHz
MAG
2
|S21e
|
5
0
5
0
V
CE = 10 V
= 20 mA
I
C
0.05
0.1
0.2
0.5
1
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
Remark The graphs indicate nominal characteristics.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 3 of 7
2SC3356
NOISE FIGURE vs.
COLLECTOR CURRENT
NOISE FIGURE, INSERTION POWER GAIN
vs. COLLECTOR TO EMITTER VOLTAGE
7
6
5
4
3
2
1
5
4
3
2
1
15
12
9
V
CE = 10 V
f = 1 GHz
= 20 mA
f = 1 GHz
I
C
2
|S21e
|
6
NF
3
0
0
0.5
1
5
10
50 70
0
2
4
6
8
10
Collector Current I
C
(mA)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 4 of 7
2SC3356
SMITH CHART
S
11e, S22e-FREQUENCY
CONDITION : VCE = 10 V, 200 MHz Step
0.15
70
90
80
1.4
1.8
T
40
P
M
O
C
E
A
T
C
)
0 . 3
E
O
+JX
––––
(
V
Z
I
T
I
20
P
2.0 GHz
S
11e
50
REACTANCE COMPONENT
R
––––
0.2
(
)
ZO
2.0 GHz
I
C
= 20 mA
0.4
0.1
0.6
S
22e
I
C
= 5 mA
0.8
0.2
T
N
1.0
E
N
I
C
= 20 mA
0.2 GHz
C
E
C
0.2 GHz
= 5 mA
3 . 0
G
I
C
N E
0.6
0.7
9 − 0
S
21e-FREQUENCY
S12e-FREQUENCY
CONDITION : VCE = 10 V, I
C
= 20 mA
90˚
CONDITION : VCE = 10 V, I
C
= 20 mA
90˚
2.0 GHz
60˚
120˚
120˚
60˚
0.2 GHz
S
S
12e
150˚
30˚
150˚
30˚
21e
0.2 GHz
0.05 0.1 0.15 0.2 0.25
180˚
0˚ 180˚
0˚
5
10
15
20
2.0 GHz
–150˚
–30˚
–150˚
–30˚
–60˚
–60˚
–120˚
–120˚
–90˚
–90˚
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 5 of 7
2SC3356
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 6 of 7
2SC3356
PACKAGE DIMENSIONS
3-PIN MINIMOLD (UNIT: mm)
2.8 0.2
1.5
+0.1
0.65
–0.15
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 7 of 7
Revision History
2SC3356 Data Sheet
Description
Summary
Rev.
Date
Jun 2004
Page
−
−
Previous No. :PU10209EJ02V0DS
3.00
Jun 28, 2011
p.1
p.2
Modification of ORDERING INFORMATION
Modification of hFE CLASSIFICATION
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2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
RENESAS
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