2SC3736 [RENESAS]

Small Signal Bipolar Transistor, 1-Element, Silicon, MINI MOLD PACKAGE-3;


型号：	2SC3736
厂家：	RENESAS TECHNOLOGY CORP
描述：	Small Signal Bipolar Transistor, 1-Element, Silicon, MINI MOLD PACKAGE-3 开关晶体管
文件：	总5页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

SILICON TRANSISTOR

2SC3736

HIGH SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SC3736 is designed for power amplifier and high speed

switching applications.

4.5 ±±.1

1.6 ±±.ꢀ

1.5 ±±.1

FEATURES

• High speed, high voltage switching

• Low collector saturation voltage

• Complementary to the 2SA1460 PNP transistor.

ꢀ

±.4ꢀ

±±.±6

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

±.47

±±.±6

+±.±3

–±.±5

±.41

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

VCBO

V^CEO

V^EBO

I^C(DC)

IC(pulse)

5.0

1.0

2.0

°C

1.5 TYP.

3.± TYP.

1: Emitter

ꢀ: Collecter (Fin)

3: Base

Collector Current (pulse) ^Note1

Total Power Dissipation ^Note2

Junction Temperature

2.0

150

T^j

Storage Temperature

T^stg

−55 to +150

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. Mounted on ceramic substrate of 16 cm²x 0.7 mm

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17148EJ3V0DS00 (3rd edition)

The mark shows major revised points.

(Previous No. TC-1891A)

Date Published May 2004 NS CP(K)

Printed in Japan

1987

2SC3736

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

0.5

UNIT

µA

Collector Cut-off Current

ICES

VCE = 45 V, RBE = 0 Ω

Emitter Cut-off Current

IEBO

VEB = 4.0 V, IC = 0 A

0.5

µA

Note

DC Current Gain

h^FE1

hFE2

V^CE(sat)

V^BE(sat)

VCE = 10 V, IC = 50 mA

VCE = 10 V, IC = 500 mA

IC = 500 mA, IB = 50 mA

200

Note

Collector Saturation Voltage

0.17

0.90

380

6.7

0.4

1.2

Note

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

Turn-on Time

VCE = 10 V, IE = −100 mA

300

MHz

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

ton

IC = 500 mA, IB1 = −IB2

50 mA

Storage Time

tstg

Turn-off Time

toff

100

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

hFE CLASSIFICATION

MARKING

100 to 200

hFE1

60 to 120

Data Sheet D17148EJ3V0DS

2SC3736

TYPICAL CHARACTERISTICS (TA = 25°C)

TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA

AMBIENT TEMPERATURE

(TRANSIENT THERMAL RESISTANCE METHOD)

ꢀ.4

C(pulse) MAX.

ꢀ.±

1.6

1.ꢀ

±.8

±.4

ꢀ

IC(DC) MAX.

±.5

±.ꢀ

±.1

±.±5

5±

1±±

15±

±.±ꢀ

±.±1

T^A- Ambient Temperature - °C

ꢀ

1±

ꢀ±

5± 1±±

V^CE- Collector to Emitter Voltage - V

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

1.±

±.8

±.6

±.4

±.ꢀ

1.±

±.8

±.6

±.4

±.ꢀ

1± mA

9.± mA

8.± mA

1± mA

9.± mA

8.± mA

7.± mA

5.± mA

4.± mA

3.± mA

ꢀ.± mA

3.± mA

ꢀ.± mA

I = 1.± mA

±.ꢀ ±.4 ±.6 ±.8 1.± 1.ꢀ 1.4 1.6 1.8 ꢀ.±

ꢀ

V^CE- Collector to Emitter Voltage - V

VCE - Collector to Emitter Voltage - V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

DC CURRENT GAIN vs. COLLECTOR CURRENT

1±±±

VCE = 1± V

5±±

ꢀ

CE = 1± V

ꢀ±±

1±±

5 V

ꢀ V

5±± m

5±

ꢀ±± m

1±± m

5± m

ꢀ±

1±

1± m ꢀ± m 5± m 1±± mꢀ±± m 5±± m

ꢀ

ꢀ± m

1± m

IC - Collector Current - A

6±±

7±±

8±±

9±±

1±±±

VBE - Base to Emitter Voltage - V

Data Sheet D17148EJ3V0DS

2SC3736

BASE AND COLLECTOR SATURATION VOLTAGE vs.

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

EMITTER CURRENT

1±±±

5±±

1±

VCE = 1± V

IC = 1± IB

ꢀ

ꢀ±±

1±±

±.5

5±

±.ꢀ

ꢀ±

1±

±.1

±.±5

−1± m −ꢀ± m −5± m −1±± m −ꢀ±± m −5±± m

−1

−ꢀ

−5

1± m ꢀ± m 5± m1±± mꢀ±± m 5±± m

ꢀ

I^E- Emitter Current - A

I^C- Collector Current - A

OUTPUT CAPACITANCE vs. REVERSE VOLTAGE

SWITCHING TIME vs. COLLECTOR CURRENT

1±±±

5±±

1±±

CC = 1± V

f = 1.± MHz

B1 = −IBꢀ

PW = ꢀ±± ns

Duty Cycle ≤ ꢀ%

5±

ꢀ±±

1±±

5±

ꢀ±

1±

stg

ꢀ±

1±

ꢀ

1± m ꢀ± m

5± m 1±± m ꢀ±± m

5±± m

ꢀ

ꢀ±

1±

ꢀ

5±

1±±

I^C- Collector Current - A

VCB - Collector to Base Voltage - V

SWITCHING TIME TEST CIRCUIT

1±%

9±%

CC = 1± V

ꢀ± Ω

OUT

1±± Ω

ton

+1± V

5± Ω

13± Ω

1±%

BB = −5 V

1±± ns

Duty Cycle = ꢀ%

9±%

1±%

OUT

stg

off

Data Sheet D17148EJ3V0DS

2SC3736

•

The information in this document is current as of May, 2004. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or

data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all

products and/or types are available in every country. Please check with an NEC Electronics sales

representative for availability and additional information.

• No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may

appear in this document.

•

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•

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M8E ±ꢀ. 11-1

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