2SD1367 [RENESAS]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD1367 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1367
Silicon NPN Epitaxial
REJ03G0785-0200
(Previous ADE-208-1147)
Rev.2.00
Aug.10.2005
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB1001
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R
)
1
2
e
3
or
tor (Flange)
Note: Marking is “BC“.
ark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissip
Junction temperature
EO
Ratings
Unit
20
16
6
2
3
1
V
V
V
A
VEBO
IC
1
iC(peak)
*
A
PC*2
Tj
W
°C
°C
150
–55 to +150
Storage temperature
Tstg
Notes: 1. PW ≤ 10 ms, Duty cy0%.
2. Value on the alumina ceamic board (12.5 × 20 × 0.7 mm)
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1367
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Min
20
16
6
—
—
250
—
—
—
—
Typ
—
—
—
—
Max
—
—
Unit
V
V
V
µA
µA
Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 16 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
—
0.1
0.1
500
0.3
1.2
—
—
0.15
0.9
100
20
V
V
MHz VCE = 2 V, IC = 10 mA
pF VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
—
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1367
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
100
80
1.2
0.8
0.4
0.2
0.25
0.2
60
0.15
0.1
40
0.05 mA
20
IB = 0
0
50
100
150
0
2
4
6
8
10
CollEmitter Voltage VCE (V)
Ambient Temperature Ta (°C)
aracteristics
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
2 V
Ta = 75°C
25
10
–25
3
1
0
0.4
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
Collecto
DC s.
Saturation Voltage vs. Collector Current
3.0
10,000
VBE (sat)
1.0
30,00
1,000
Pusle
VCE = 2 V
Ta = 75°C 25
0.3
0.1
lC = 10 lB
300
100
–25
0.03
0.01
VCE (sat)
30
10
0.003
3
10
30
100 300 1,000 3,000
1
3
10
30
100 300 1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD1367
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
f = 1 MHz
IE = 0
300
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD1367
Package Dimensions
JEITA Package Code
SC-62
RENESAS Code
Package Name
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
PLZZ0004CA-A
4.5 0.1
1.8 Max
1.5 0.1
0.44 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Ordering Information
Part Name
Shipping Container
mm Reel, 12 mm Emboss Taping
2SD1367BCTR-E
1000
Note: For some grades, prodse contact the Renesas sales office to check the state of
production before or
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technouct best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belochnology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parthe use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and on on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without nr other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rutor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other l
Please also pay attention to information published by Renesas Technology Corp. by vagy Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including progorithms, please be sure to
evaluate all information as a total system before making a final decision on the aenesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufacturnder circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an auistributor when considering the use of a
product contained herein for any specific purposes, such as apparatus ol, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessarese materials.
7. If these products or technologies are subject to the Japanese expunder a license from the Japanese government and
cannot be imported into a country other than the approved dest
Any diversion or reexport contrary to the export control laws adestination is prohibited.
8. Please contact Renesas Technology Corp. for further detaied therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/ormation.
Renesas Technology America
450 Holger Way, San Jose, C
Tel: <1> (408) 382-7500, F
Renesas Technology
Dukes Meadow, Millboare, SL8 5FH, U.K.
Tel: <44> (1628) 585-100
Renesas Technology Hong K
7th Floor, North Tower, World Finur City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852>
Renesas Technology Taiwan Co., Ltd
10th Floor, No.99, Fushing North Road, Tei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
相关型号：
©2020 ICPDF网 联系我们和版权申明