2SK2328-E [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK2328-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总7页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2328
Silicon N Channel MOS FET
REJ03G1007-0200
(Previous: ADE-208-1355)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching rconverter
Outline
RENESAS A
(Package na
D
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2328
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
Unit
V
650
VGSS
±30
V
ID
7
A
1
Drain peak current
ID(pulse)
*
28
A
Body to drain diode reverse drain current
Channel dissipation
IDR
7
75
A
Pch*2
Tch
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
ol
Min
650
±30
Typ
Max
—
Unit
V
Test Conditions
Drain to source breakdo
Gate to source break
Gate to source leak cur
Zero gate voltage drain cu
Gate to source cutoff voltage
—
—
—
—
—
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 550 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4A, VGS = 10 V*3
—
V
±10
250
3.0
1.4
µA
µA
V
Static drain to source on state
resistance
Ω
Forward transfer admittance
Input capacitance
Ci
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
S
ID = 4 A, VDS = 10 V*3
pF
pF
pF
s
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
Turn-off delay time
Fall time
td(off)
tf
4
Body-drain diode forward voltage
VDF
trr
0.95
420
, VGS = 0
Body-drain diode reverse recovery
time
VGS = 0,
t = 100 A / µs
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2328
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
50
100
75
20
10
5
100
µ
s
2
1
50
Operation in
this area is
limited by R
0.5
DS(on)
25
0.2
0.1
Ta = 25°C
0.05
1
3
10
30
100 300 1000
0
50
100
150
200
Case TempeTC (°C)
Drain to Source Voltage VDS (V)
Ty
Typical Transfer Characteristics
10
10
10 V
VDS = 20 V
Pulse Test
8
6
4
2
8
6
TC = 75°C
25°C
4 V
–25°C
VGS = 3.5 V
40 50
0
10
20
30
6
8
10
Drain to Source Voltage VDS (V)
tage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
rce on State
Drain Current
20
16
12
8
5
Puls
VGS = 10 V
Pulse Test
ID = 10 A
2
1
15 V
0.5
0.2
0.1
5 A
2 A
4
0.05
0
4
8
12
16
20
0.5
1
2
5
10 20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2328
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
50
5
4
3
2
1
VDS = 20 V
Pulse Test
VGS = 10 V
Pulse Test
20
10
5
TC = 75°C
25°C
–25°C
ID = 10 A
5 A
2 A
2
1
0.5
0
0.1 0.2
0.5
1
2
5
10
–40
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to everse
Typical Capacitance vs.
Drain to Source Voltage
500
5,000
1,000
VGS = 0
f = 1 MHz
Ciss
200
100
50
Coss
100
20
10
di/dt = 100 A/µs, VGS = 0
Ta = 25°C
Crss
40
5
20
30
50
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current IDR (A)
ce Voltage VDS (V)
Dynamic Input Characteristics
VDD = 100 V
acteristics
20
1,000
800
600
400
200
5
200
GS = 10 V, PW = 2 µs
.
=
duty < 1%, VDD 30 V
.
16
12
8
250 V
400 V
td (off)
100
50
VGS
tf
VDS
ID = 8 A
tr
20
10
td (on)
VDD = 400 V
250 V
100 V
4
0
5
0.2
20
40
60
80
100
0
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2328
Reverse Drain Current vs.
Source to Drain Voltage
10
8
Pulse Test
6
4
2
5, 10 V
0.4
VGS = 0, –5 V
0.8 1.2
0
1.6
2.0
Source to Drain Voltage VSD (V)
malized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
0.3
0.1
θ
γ
θ
ch – c(t) = s (t) • ch – c
h – c = 1.67°C/W, Tc = 25°C
PW
T
D =
0.03
0.01
10 µ
100 µ
1 m
10
Pulse Widt
Switching Time Test Circuit
Vin Monitor
ms
90%
Vout Monitor
D.U.T.
Vin
10%
10%
10%
10%
RL
Vout
Vin
10 V
50 Ω
VDD
.
90%
tr
90%
td (off)
=
30 V
.
td (on)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK2328
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
0.5
0.5 0.1
Ordering Information
Part Name
Quantity
ping Container
2SK2328-E
500 pcs
Note: For some grades, production may be terminated. Ploffice to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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