2SK3107-A [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416;![2SK3107-A](http://pdffile.icpdf.com/pdf2/p00227/img/icpdf/2SK3107-AT_1331941_icpdf.jpg)
型号: | 2SK3107-A |
厂家: | ![]() |
描述: | TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416 |
文件: | 总7页 (文件大小:305K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Elnics Corporation
Issued by: Renesas Electronics Corporation (http://wwesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3107
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3107 is a switching device which can be driven directly by a
2.5 V power source.
+0.1
–0
+0.1
–0.05
0.3
0.15
The 2SK3107 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
0 to 0.1
FEATURES
1
• Can be driven by a 2.5 V power source
• Low gate cut-off voltage
+0.1
–0
0.2
0.5
0.6
0.5
0.75 ± 0.05
1.0
1.6 ± 0.1
ORDERING INFORMATION
1: Source
2: Gate
PART NUMBER
PACKAGE
2SK3107
SC-75 (USM)
3: Drain
Marking: D1
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C
Drain
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
Storage Temperature
V
(DC)
ID(pulse)
PT
30
±20
V
V
Body
Diode
±0.1
A
Gate
±0.4
A
Gate
Protection
Diode
200
mW
°C
°C
Source
Tch
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13802EJ4V0DS00 (4th edition)
Date Published September 2006 NS CP(K)
Printed in Japan
1999
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK3107
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 30 V, VGS = 0 V
MIN. TYP. MAX. UNIT
1.0
±10
1.8
μA
μA
V
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 3.0 V, ID = 10 μA
VDS = 3.0 V, ID = 10 m A
VGS = 2.5 V, ID = 1.0 m A
VGS = 4.0 V, ID = 10 mA
VGS = 10 V, ID = 10 mA
VDS = 3.0 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
1.0
20
1.4
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
mS
Ω
8.0
4.0
3.0
9.0
12
15
8.0
5.0
Ω
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
Crss
f = 1 MHz
.1
40
Td(on)
tr
VDD = 3.0 V
ID = 10 mA
55
Turn-off Delay Time
Fall Time
td(off)
VGS = 4.0 V
68
tf
RG = 10 Ω, RL = 300 Ω
64
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
R
L
90%
V
GS
S
10%
Wave Form
0
RG
PG.
V
DD
90%
90%
10%
I
D
V
0
GS
10%
I
D
0
t
d(on)
t
r
t
d(off)
t
f
τ
t
on
t
off
τ = 1 s
μ
Duty Cycle ≤ 1%
2
Data Sheet D13802EJ4V0DS
2SK3107
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
Mounted on ceramic substrate
Pulsed
of 3.0 cm2 x 0.64 mm
200
160
120
80
V
GS = 4 V
3.5 V
200
100
3 V
2.5 V
40
0
2
4
8
10
0
30
60
90
120 150 180 210
VDS - Drain tVoltage - V
T
A - Ambient Temperature - ˚C
FORWARD TADMMITTANCE Vs.
DRAIN CUR
TRANSFER CHARACTERISTICS
DS = 3.0 V
1
0.1
1000
V
V = 3.
PDuSlse
Pulsed
0.01
0.001
TA
= 125˚C
75˚C
25˚C
T
A
= −25˚C
25˚C
−25˚C
10
1
0.0001
0.00001
75˚C
125˚C
0.0001
0.001
0.01
0.1
0.000001
1
5.0
2.0
3.0
1.0
I
D - Drain Current - A
VGS - Gate to Sorce - V
DRAIN TO SOU-STATE
DRAIN TO SOURCE ON-STATE
RESISTANCIN CURRENT
RESISTANCE vs. DRAIN CURRENT
15
10
20
15
10
V
GS = 4.0 V
V
GS = 2.5 V
Pulsed
Pulsed
T
A
= 125˚C
75˚C
25˚C
−25˚C
T
A
= 125˚C
75˚C
25˚C
−25˚C
5
0
5
10
0.0001
0.001
0.1
0.001
0.01
0.01
0.0001
0.1
1
I
D
- Drain Current - A
ID - Drain Current - A
3
Data Sheet D13802EJ4V0DS
2SK3107
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
8
30
V
= 10 V
PGuSlsed
Pulsed
I
D
= 1 mA
10 mA
100 mA
20
6
T
A
= 125˚C
75˚C
4
10
0
25˚C
−25˚C
2
0
12
16
4
8
20
0.1
1
0.0001
0.001
0.01
ID - Drain Current - A
V
GS - Gate to Sourltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHINCTERISTICS
<R>
100
1000
f = 1 MHz
GS = 0 V
V
10
1
C
Coissss
t
r
t
tdf(on)
C
rss
td(off)
V
DD = 3 V
GS = 4V
V
R
G
= 10 Ω
0.1
0.01
10
0.01
0.1
1
10
0.1
D - Drain Current - A
1
V
DS - Drain to Source Voltage - V
I
SOURCE TO DRAIN DIODE FOROLTAGE
1
VGS = 0 V
Pulsed
0.1
0.01
0.001
0.0001
0.8
F(S-D) - Source to Drain Voltage - V
1.2
1.0
0.4
0.6
V
4
Data Sheet D13802EJ4V0DS
2SK3107
•
The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copor other intellectual
property rights of third parties by or arising from the use of NEC Electronics pristed in this document
or any other liability arising from the use of such products. No license, , implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of lectronics or others.
Descriptions of circuits, software and other related information in this ent are provided for illustrative
purposes in semiconductor product operation and application es. The incorporation of these
circuits, software and information in the design of a customerpment shall be done under the full
responsibility of the customer. NEC Electronics assumes onsibility for any losses incurred by
customers or third parties arising from the use of these circtware and information.
•
• While NEC Electronics endeavors to enhance the qualitility and safety of NEC Electronics products,
customers agree and acknowledge that the possibility cts thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (ig death) to persons arising from defects in NEC
Electronics products, customers must incorpofficient safety measures in their design, such as
redundancy, fire-containment and anti-failure s.
• NEC Electronics products are classified ifollowing three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies o NEC Electronics products developed based on a customer-
designated "quality assurance proor a specific application. The recommended applications of an NEC
Electronics product depend on iy grade, as indicated below. Customers must check the quality grade of
each NEC Electronics producusing it in a particular application.
"Standard": Computers, uipment, communications equipment, test and measurement equipment, audio
and visuament, home electronic appliances, machine tools, personal electronic equipment
and inobots.
"Special": Transtion equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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