关闭背景特效

2SK3109 [TYSEMI]

Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A); 栅极电压等级-30 V低通态电阻RDS（on ） = 0.4 MAX 。（ VGS = 10V ， ID = 5.0 A）

2SK3109


元器件型号：	2SK3109
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A) 栅极电压等级-30 V低通态电阻RDS（on ） = 0.4 MAX 。（ VGS = 10V ， ID = 5.0 A）栅极
PDF文件：	总1页 (文件大小：183K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK3109参数

2SK3109-AZ

Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

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0 NEC

2SK3109-AZ

2SK3109-AZ

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0 RENESAS

2SK3109-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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35 NEC

2SK3109-Z

2SK3109-Z

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0 RENESAS

2SK3109-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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32 NEC

2SK3109-ZJ-E1-AZ

2SK3109-ZJ-E1-AZ

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0 RENESAS

2SK311

SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)

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87 HITACHI

2SK3110

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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118 NEC

2SK3111

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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56 NEC

2SK3111

MOS Field Effect Transistor

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9 KEXIN

2SK3111

Gate voltage rating -30 V Avalanche capability rated Surface mount device available

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8 TYSEMI

2SK3111

Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

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1 NEC

2SK3111

20A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN

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1 RENESAS

2SK3111-AZ

Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

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0 NEC

2SK3111-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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28 NEC

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