2SK3230J5 [RENESAS]
10mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TUSM, SC-89, 3 PIN;
| 型号： | 2SK3230J5 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 10mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TUSM, SC-89, 3 PIN 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1010
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Issued by: Renesas Electronics Corporation (m)
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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3230 is suitable for converter of ECM.
+0.1
–0.05
0.1
0.3 ± 0.05
FEATURES
• Compact package
G
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
• Includes diode and high resistance at G - S
S
1.0
1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER
2SK3230
PACKAGE
SC-89 (TUSM)
+0.1
–0
0.2
ABSOLUTE MAXIMUM RATINGS (TA = 2
Drain to Source Voltage Note1
V
EQUIVALENT CIRCUIT
Gate to Drain Voltage
Drain Current
mA
mA
mW
°C
Gate Current
0
Drain
Total Power Dissipation Not
Junction Temperature
Storage Temperature
200
125
Gate
stg
–55 to +125 °C
Source
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15942EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
2002
©
2SK3230
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
SYMBOL
IDSS
TEST CONDITIONS
VDS = 5.0 V, VGS = 0 V
MIN. TYP. MAX. UNIT
40
600
µA
V
VGS(off)
| yfs1 |
| yfs2 |
Ciss
VDS = 5.0 V, ID = 1.0 µA
−0.1
350
350
−1.0
Forward Transfer Admittance
Forward Transfer Admittance
Input Capacitance
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
See Test Circuit
µS
µS
pF
µV
7.0
1.8
8.0
3.0
Noise Voltage
NV
IDSS RANK
MARKING
J2
J3
J4
J5
J6
J7
IDSS
40 to 70
60 to 110
90 to 180
150 to 300
200 t
300 to 600
(µA)
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
JIS A
NV (r.m.s)
R = 1 kΩ
C = 10 pF
2
Data Sheet D15942EJ1V0DS
2SK3230
TYPICAL CHARACTERISTICS (TA = 25°C)
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DERATING FACTOR OF
POWER DISSIPATION
40
30
100
80
20
10
µ
−1.0 −0.8 −0.6 −0.4 −0.2
0
60
0.2 0.4 0.6 0.8 1.0
−10
−20
−30
−40
40
20
0
20
40 60
80 100 120 140 160
Vource Voltage - V
TA - Ambient Temperature - ˚C
vs.
TAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
0.8
0.6
0.4
0.2
V
DS = 0 V
V
DS = 5 V
f = 1.0 MHz
µ
0
A
µ
I
µ
S
D
2
1
1
2
5
10
20
50
100
−0.6
−0.4
−0.
V
DS - Drain to Source Voltage - V
V
GS - Gate to
GATE TO SOURCARD
TRANSFER ADMITTAGE
DRAIN CUR
10.0
= 5 V
µ
5.0
2.0
1.0
0.5
|yfs
|
0.2
0.1
V
GS (off)
0.05
0.02
0.01
10
20
50
100
200
500 1000
µ
Zero-Gate Voltage Drain Current -
A
3
Data Sheet D15942EJ1V0DS
2SK3230
DRAIN CURRENT vs.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE VOLTAGE
RANK: J2
RANK: J3
0.15 V
250
200
150
100
50
300
240
180
120
60
0.15 V
µ
µ
0.10 V
0.05 V
0.10 V
0.05 V
V
GS = 0 V
VGS = 0 V
−0.15 V
−0.05 V
−0.10 V
−0.15 V
−0.05 V
−0.10 V
0
0
0
0
0
2
4
6
8
10
10
0
2
4
6
8
10
VDS - Drain to Source Voltage - V
VDS - Dto Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
vs.
VOLTAGE
RANK: J4
5
0
400
320
240
160
80
V
0.15 V
0.10 V
µ
µ
0.05 V
0.05 V
V
GS = 0 V
V
GS = 0 V
−0.05 V
−0.10 V
−0.05 V
−0.10 V
−0
−0.15 V
0
0
2
4
6
8
10
2
4
6
V
DS - Drain to Source Voltage - V
VDS - Drain to Sourc
DRAIN CU
DRAIN
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J6
RANK: J7
0.1
700
560
420
280
140
0
900
720
540
360
180
0
0.15 V
0.10 V
µ
µ
0.05 V
0.05 V
VGS = 0 V
V
GS = 0 V
−0.05 V
−0.10 V
−0.05 V
−0.10 V
−0.15 V
−0.15 V
2
4
6
8
0
2
4
6
8
10
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
5
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
6
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
7
Data Sheet D15942EJ1V0DS
2SK3230
•
The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC nductor products. Not all
products and/or types are available in every country. Please cheNEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in means without prior
written consent of NEC. NEC assumes no responsibility for an this document.
NEC does not assume any liability for infringement of patenctual property rights of
third parties by or arising from the use of NEC semicois document or any other
liability arising from the use of such products. No licerwise, is granted under any
patents, copyrights or other intellectual property rig
•
•
•
Descriptions of circuits, software and other relument are provided for illustrative
purposes in semiconductor product opermples. The incorporation of these
circuits, software and information in thuipment shall be done under the full
responsibility of customer. NEC assuny losses incurred by customers or third
parties arising from the use of these mation.
While NEC endeavours to enhancafety of NEC semiconductor products, customers
agree and acknowledge that treof cannot be eliminated entirely. To minimize
risks of damage to propdeath) to persons arising from defects in NEC
semiconductor productste sufficient safety measures in their design, such as
redundancy, fire-conttures.
NEC semiconductoo the following three quality grades:
"Standard", "Specia"Specific" quality grade applies only to semiconductor products
developed based on ated "quality assurance program" for a specific application. The
recommended applicationconductor product depend on its quality grade, as indicated below.
Customers must check the grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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