2SK3353-S-AZ [RENESAS]
2SK3353-S-AZ;
| 型号： | 2SK3353-S-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2SK3353-S-AZ |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3353
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3353 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
PART NUMBER
2SK3353
PACKAGE
TO-220AB
TO-262
2SK3353-S
2SK3353-ZJ
FEATURES
TO-263
• Super low on-state resistance:
RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 14 mΩ MAX. (VGS = 4 V, ID = 41 A)
• Low Ciss: Ciss = 4650 pF TYP.
• Built-in gate protection diode
Note
TO-220SMD
2SK3353-Z
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
60
±20
V
V
±82
A
±328
95
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
(TO-262)
W
PT
1.5
Tch
150
°C
°C
A
Storage Temperature
Tstg
–55 to +150
45
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
202
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
(TO-263, TO-220SMD)
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published July 2002 NS CP(K)
Printed in Japan
D14130EJ4V0DS00 (4th edition)
The mark ! shows major revised points.
1999
©
2SK3353
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
VDS = 60V, VGS = 0 V
MIN. TYP. MAX.
Unit
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
10
µA
µA
V
VGS = ±20 V, VDS = 0 V
VDS = 10V, ID = 1 mA
VDS = 10V, ID = 41 A
VGS = 10V, ID = 41 A
±10
Gate Cut-off Voltage
VGS(off)
| yfs |
1.5
30
2.0
50
2.5
Forward Transfer Admittance
Drain to Source On-state Resistance
S
RDS(on)1
7.5
9.5
14
mΩ
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
VGS = 4V, ID = 41 A
VDS = 10 V
10.5
4650
780
380
100
1550
280
420
90
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGS = 0 V
f = 1 MHz
VDD = 30 V, ID = 41 A
VGS = 10 V
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
Total Gate Charge
QG
VDD = 48 V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
14
ID = 82 A
24
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V
di/dt = 100 A/µs
1.0
60
ns
nC
Qrr
110
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
10%
0
R
G
PG.
GS = 20→0V
PG.
50 Ω
V
DD
VDD
V
I
D
90%
90%
10%
I
D
V
0
GS
BVDSS
I
D
0
Wave Form
I
AS
VDS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
VDD
2
Data Sheet D14130EJ4V0DS
2SK3353
TYPICAL CHARACTERISTICS (TA = 25°C )
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
60
40
20
0
100
80
60
40
20
0
0
20
40 60
80 100 120 140 160
20 40
60
80 100 120 140 160
0
T
ch - Channel Temperature - ˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse)
I
D(DC)
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 1.32˚C/W
1
0.1
0.01
Single Pulse
100 1000
µ
10
1 m
10 m
100 m
1
10
100
µ
PW - Pulse Width - s
3
Data Sheet D14130EJ4V0DS
2SK3353
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
Pulsed
DRAIN TO SOURCE VOLTAGE
300
250
200
150
100
50
1000
100
V
GS =10 V
10
1
T
A
= −50˚C
25˚C
75˚C
4.0 V
150˚C
0
Pulsed
V
DS = 10 V
0.1
4
0
1
2
3
6
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
100
10
V
DS = 10 V
Pulsed
Pulsed
T
A
= 150˚C
75˚C
10
25˚C
ID = 41 A
−50˚C
1
0
0.1
0.1
1
10
100
5
10
15
20
0
VGS - Gate to Source Voltage - V
I
D - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
30
20
Pulsed
V
DS = 10 V
= 1 mA
I
D
2.5
2
1.5
1
V
GS = 4.0 V
10 V
10
0
0.5
0
−50
0
50
100
150
0.1
1
10
100
1000
T
ch - Channel Temperature - ˚C
I
D - Drain Current - A
4
Data Sheet D14130EJ4V0DS
2SK3353
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1000
100
25
Pulsed
Pulsed
20
VGS = 10 V
V
GS = 4.0 V
15
10
V
GS = 0 V
10 V
10
1
5
0
I
D
= 41 A
150
0
2.0
0.8
1.2
1.6
100
0
50
0.4
−50
T
ch - Channel Temperature - ˚C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100000
10000
1000
10000
V
GS = 0 V
f = 1 MHz
t
r
1000
100
10
Ciss
t
d(off)
t
f
Coss
t
d(on)
Crss
100
100
0.1
1
0.1
1
10
100
10
V
DS - Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
1000
100
100
µ
di/dt = 100 A/ s
GS = 0 V
V
8
6
4
80
V
DD = 48 V
30 V
12 V
V
GS
60
40
10
1
20
0
2
0
I = 82 A
D
V
DS
0.1
1.0
10
100
20 40
60 80 100 120 140 160
0
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
5
Data Sheet D14130EJ4V0DS
2SK3353
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
1000
100
160
140
120
100
80
V
R
V
I
DD = 30 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 45 A
G
I
AS = 45A
60
10
1
40
V
DD = 30V
= 25 Ω
GS = 20 → 0 V
20
R
G
V
0
10
µ
100
µ
1m
10m
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H
6
Data Sheet D14130EJ4V0DS
2SK3353
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
★
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
10.6 MAX.
4.8 MAX.
1.3±0.2
φ
10 TYP.
3.6±0.2
1.3±0.2
10.0 TYP.
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
1.Gate
2.Drain
3.Source
2.54 TYP.
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)Note
4.8 MAX.
4.8 MAX.
10 TYP.
4
10 TYP.
4
1.3±0.2
1.3±0.2
1
2
3
1
2
3
1.4±0.2
1.4±0.2
0.7±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
0.5±0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
1.Gate
1.Gate
2.Drain
3.Source
2.Drain
3.Source
4.Fin (Drain)
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
7
Data Sheet D14130EJ4V0DS
2SK3353
•
The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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