5962R9674202QEX [RENESAS]
8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, SIDE BRAZED, CERAMIC, DIP-16;
| 型号： | 5962R9674202QEX |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, SIDE BRAZED, CERAMIC, DIP-16 CD |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-508BRH
Data Sheet
December 1999
File Number 4824
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
Features
• Electrically Screened to SMD # 5962-96742
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
The HS-508BRH is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater than
either supply, which eliminates the possibility of damage when
supplies are off, but input signals are present. Equally
important, it can withstand brief input transient spikes of
several hundred volts; which otherwise would require complex
external protection networks. Necessarily, ON resistance is
somewhat higher than similar unprotected devices, but very
low leakage current combine to produce low errors.
5
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)
- Dielectrically Isolated Device Islands
2
- SEP >100 Mev-mg/cm
• Analog/Digital Overvoltage Protection
• ESD Rated to 3KV
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• DTL/TTL and CMOS Compatible
• Analog Signal Range. . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V
• Fast Access Time
Reference Application Notes 520 and 521 for further
information on the HS-508BRH multiplexer in general.
• Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ)
• Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ)
The HS-508BRH has been specifically designed to meet
o
exposure to radiation environments. Operation from -55 C to
o
125 C is guaranteed.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Ordering Information
INTERNAL
MKT. NUMBER
TEMP.
o
ORDERING NUMBER
5962R9674202QEC
5962R9674202QXC
5962R9674202VEC
5962R9674202VXC
RANGE ( C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96742. A “hot-link” is provided
on our homepage for downloading.
HS1-508BRH-8
HS9-508BRH-8
HS1-508BRH-Q
HS9-508BRH-Q
www.intersil.com/spacedefense/newsafclasst.asp
HS1-508BRH/PROTO HS1-508BRH/PROTO
HS9-508BRH/PROTO HS9-508BRH/PROTO
Pinouts
HS1-508BRH 16 LEAD SIDEBRAZE DIP
MIL-STD-1835, CDIP2-T16
TOP VIEW
HS9-508BRH 16 LEAD FLATPACK
MIL-STD-1835, CDFP4-F16
TOP VIEW
AO
EN
1
2
3
4
5
6
7
8
16 A1
A0
A1
A2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
EN
15 A2
-VSUP
GND
+VSUP
IN5
-VSUP
IN 1
14 GND
13 +VSUP
12 IN 5
11 IN 6
10 IN 7
IN1
IN2
IN 2
IN3
IN6
IN 3
IN4
IN7
OUT
IN8
IN 4
9
IN 8
OUT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HS-508BRH
Functional Diagram
IN 1
P
N
A0
A1
1
DIGITAL
ADDRESS
OUT
A2
EN
8
N
P
IN 8
ADDRESS INPUT
DECODERS
MULTIPLEX
SWITCHES
BUFFER AND
LEVEL SHIFTER
TRUTH TABLE
A2
X
L
A1
X
L
A0
X
L
EN
L
“ON” CHANNEL
NONE
H
H
H
H
H
H
H
H
1
2
3
4
5
6
7
8
L
L
H
L
L
H
H
L
L
H
L
H
H
H
H
L
H
L
H
H
H
2
HS-508BRH
Die Characteristics
DIE DIMENSIONS:
Backside Finish:
120 mils x 93 mils x 19 mils
Silicon
INTERFACE MATERIALS:
Glassivation:
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Type: Phosphorus Silicon Glass (PSG)
Unbiased (DI)
Thickness: 8kÅ ±1kÅ
ADDITIONAL INFORMATION:
Top Metallization:
Worst Case Current Density:
Type: AlSiCu
Thickness: 16kÅ ±2kÅ
2
6.68e04 A/cm
Transistor Count:
Substrate:
506
Rad Hard Silicon Gate
Dielectric Isolation
Metallization Mask Layout
HS-508BRH
IN2
IN1
-V
IN3
EN
A0
A1
IN4
OUT
IN8
A2
IN7
IN6
IN5
+V
GND
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3
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